GB1319852A - Semi-conductor device - Google Patents

Semi-conductor device

Info

Publication number
GB1319852A
GB1319852A GB3022170A GB3022170A GB1319852A GB 1319852 A GB1319852 A GB 1319852A GB 3022170 A GB3022170 A GB 3022170A GB 3022170 A GB3022170 A GB 3022170A GB 1319852 A GB1319852 A GB 1319852A
Authority
GB
United Kingdom
Prior art keywords
gaal
june
gaas
intermediate layers
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3022170A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4918369A external-priority patent/JPS5034394B1/ja
Priority claimed from JP4918469A external-priority patent/JPS497875B1/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of GB1319852A publication Critical patent/GB1319852A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)

Abstract

1319852 Semiconductor devices SHARP KK 22 June 1970 [20 June 1969(2)] 30221/70 Heading H1K [Also in Division C4] A PNPN semiconductor device exhibiting negative resistance and light emission of high efficiency even at room temperature is made of a high band gap, low resistance material, the two intermediate layers having thicknesses similar to the minority carrier diffusion length therein and at least one of the outer layers having a greater thickness. A particular embodiment is made of GaAs containing Si as an amphoteric dopant, the conductivity type imparted to the GaAs by the Si being determined by the temperature and cooling rate used during the liquid phase epitaxy process by which the device is formed. The device may function as a light-emitting diode in which the peak wavelength of light emitted depends upon the operating temperature. Such a device also exhibits a voltage-variable capacitance characteristic which may be adjusted by irradiating the device. A gate electrode may also be provided on a Zn-diffused region connected to one of the intermediate layers. Alternative semiconductor materials are GaP, InP, GaSb, GaN, AlSb, AlAs, (GaAl)As, Ga(AsP) and (GaAl)P and the amphoteric dopant may be Ga or Sn.
GB3022170A 1969-06-20 1970-06-22 Semi-conductor device Expired GB1319852A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4918369A JPS5034394B1 (en) 1969-06-20 1969-06-20
JP4918469A JPS497875B1 (en) 1969-06-20 1969-06-20

Publications (1)

Publication Number Publication Date
GB1319852A true GB1319852A (en) 1973-06-13

Family

ID=26389553

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3022170A Expired GB1319852A (en) 1969-06-20 1970-06-22 Semi-conductor device

Country Status (4)

Country Link
DE (1) DE2030368C3 (en)
FR (1) FR2046953B1 (en)
GB (1) GB1319852A (en)
NL (1) NL7008827A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3238230A4 (en) * 2014-12-23 2018-08-22 INTEL Corporation Diffusion tolerant iii-v semiconductor heterostructures and devices including the same
US10497814B2 (en) 2014-12-23 2019-12-03 Intel Corporation III-V semiconductor alloys for use in the subfin of non-planar semiconductor devices and methods of forming the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2430313C2 (en) * 1974-06-24 1987-02-19 Siemens AG, 1000 Berlin und 8000 München Optical multilayer semiconductor radiation source

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3238230A4 (en) * 2014-12-23 2018-08-22 INTEL Corporation Diffusion tolerant iii-v semiconductor heterostructures and devices including the same
US10497814B2 (en) 2014-12-23 2019-12-03 Intel Corporation III-V semiconductor alloys for use in the subfin of non-planar semiconductor devices and methods of forming the same

Also Published As

Publication number Publication date
DE2030368A1 (en) 1971-01-07
FR2046953A1 (en) 1971-03-12
FR2046953B1 (en) 1973-01-12
NL7008827A (en) 1970-12-22
DE2030368B2 (en) 1972-07-06
DE2030368C3 (en) 1979-02-15

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Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years