IT1085840B - Componente a semiconduttori con un contatto di schottky,avente una bassa resistenza in serie,e procedimento per fabbricare tale componente - Google Patents

Componente a semiconduttori con un contatto di schottky,avente una bassa resistenza in serie,e procedimento per fabbricare tale componente

Info

Publication number
IT1085840B
IT1085840B IT25513/77A IT2551377A IT1085840B IT 1085840 B IT1085840 B IT 1085840B IT 25513/77 A IT25513/77 A IT 25513/77A IT 2551377 A IT2551377 A IT 2551377A IT 1085840 B IT1085840 B IT 1085840B
Authority
IT
Italy
Prior art keywords
component
procedure
manufacturing
schottky contact
serial resistance
Prior art date
Application number
IT25513/77A
Other languages
English (en)
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1085840B publication Critical patent/IT1085840B/it

Links

Classifications

    • H10P30/21—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H10D30/0614—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs using processes wherein the final gate is made after the completion of the source and drain regions, e.g. gate-last processes using dummy gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6738—Schottky barrier electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/877—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having recessed gate electrodes
    • H10D64/0116—
    • H10D64/0121—
    • H10D64/0124—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H10P14/43—
    • H10P30/206—
    • H10P30/212—
    • H10P30/22—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/10—Lift-off masking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/137—Resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/147—Silicides
IT25513/77A 1976-07-15 1977-07-08 Componente a semiconduttori con un contatto di schottky,avente una bassa resistenza in serie,e procedimento per fabbricare tale componente IT1085840B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2631873A DE2631873C2 (de) 1976-07-15 1976-07-15 Verfahren zur Herstellung eines Halbleiterbauelements mit einem Schottky-Kontakt auf einem zu einem anderen Bereich justierten Gatebereich und mit kleinem Serienwiderstand

Publications (1)

Publication Number Publication Date
IT1085840B true IT1085840B (it) 1985-05-28

Family

ID=5983114

Family Applications (1)

Application Number Title Priority Date Filing Date
IT25513/77A IT1085840B (it) 1976-07-15 1977-07-08 Componente a semiconduttori con un contatto di schottky,avente una bassa resistenza in serie,e procedimento per fabbricare tale componente

Country Status (6)

Country Link
US (1) US4173063A (show.php)
JP (1) JPS5310284A (show.php)
DE (1) DE2631873C2 (show.php)
FR (1) FR2358751A1 (show.php)
GB (1) GB1522296A (show.php)
IT (1) IT1085840B (show.php)

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FR2419586A1 (fr) * 1978-03-08 1979-10-05 Thomson Csf Circuit integre et son procede de fabrication
US4357178A (en) * 1978-12-20 1982-11-02 Ibm Corporation Schottky barrier diode with controlled characteristics and fabrication method
US4373166A (en) * 1978-12-20 1983-02-08 Ibm Corporation Schottky Barrier diode with controlled characteristics
US4313971A (en) * 1979-05-29 1982-02-02 Rca Corporation Method of fabricating a Schottky barrier contact
FR2461358A1 (fr) * 1979-07-06 1981-01-30 Thomson Csf Procede de realisation d'un transistor a effet de champ a grille auto-alignee, et transistor obtenu par ce procede
US4379005A (en) * 1979-10-26 1983-04-05 International Business Machines Corporation Semiconductor device fabrication
US4393578A (en) * 1980-01-02 1983-07-19 General Electric Company Method of making silicon-on-sapphire FET
DE3005733A1 (de) * 1980-02-15 1981-08-20 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung einer halbleiteranordnung und nach diesem verfahren hergestellte halbleiteranordnung
US4523368A (en) * 1980-03-03 1985-06-18 Raytheon Company Semiconductor devices and manufacturing methods
JPS57501656A (show.php) * 1980-10-28 1982-09-09
JPS57102075A (en) * 1980-12-17 1982-06-24 Fujitsu Ltd Semiconductor device and manufacture thereof
US4357180A (en) * 1981-01-26 1982-11-02 The United States Of America As Represented By The Secretary Of The Navy Annealing of ion-implanted GaAs and InP semiconductors
US4694563A (en) * 1981-01-29 1987-09-22 Sumitomo Electric Industries, Ltd. Process for making Schottky-barrier gate FET
US4426765A (en) 1981-08-24 1984-01-24 Trw Inc. Process for fabrication of ohmic contacts in compound semiconductor devices
FR2513439B1 (fr) * 1981-09-18 1985-09-13 Labo Electronique Physique Procede de traitement de substrat de gaas, par implantation ionique, et substrats ainsi obtenus
JPS5851572A (ja) * 1981-09-22 1983-03-26 Fujitsu Ltd 半導体装置の製造方法
JPS58130575A (ja) * 1982-01-29 1983-08-04 Hitachi Ltd 電界効果トランジスタの製造方法
FR2525028A1 (fr) * 1982-04-09 1983-10-14 Chauffage Nouvelles Tech Procede de fabrication de transistors a effet de champ, en gaas, par implantations ioniques et transistors ainsi obtenus
EP0105324A4 (en) * 1982-04-12 1986-07-24 Motorola Inc OHMIC CONTACT FOR TYPE N. GaAs
JPS58188157A (ja) * 1982-04-28 1983-11-02 Toshiba Corp 半導体装置およびその製造方法
US4499481A (en) * 1983-09-14 1985-02-12 The United States Of America As Represented By The Secretary Of The Navy Heterojunction Schottky gate MESFET with lower channel ridge barrier
US5210042A (en) * 1983-09-26 1993-05-11 Fujitsu Limited Method of producing semiconductor device
JPS60130844A (ja) * 1983-12-20 1985-07-12 Toshiba Corp 半導体装置の製造方法
JPS60193331A (ja) * 1984-03-15 1985-10-01 Nec Corp 半導体装置の製造方法
JPS6242568A (ja) * 1985-08-20 1987-02-24 Matsushita Electronics Corp 電界効果トランジスタの製造方法
JP2682043B2 (ja) * 1988-08-26 1997-11-26 富士通株式会社 化合物半導体装置の製造方法
US5204278A (en) * 1989-08-11 1993-04-20 Kabushiki Kaisha Toshiba Method of making MES field effect transistor using III-V compound semiconductor
JPH0372634A (ja) * 1989-08-11 1991-03-27 Toshiba Corp Ｍｅｓ　ｆｅｔの製造方法
JPH04171733A (ja) * 1990-11-02 1992-06-18 Matsushita Electric Ind Co Ltd 電界効果トランジスタの製造方法
SE9503631D0 (sv) * 1995-10-18 1995-10-18 Abb Research Ltd A method for producing a semiconductor device comprising an implantation step
US5849620A (en) * 1995-10-18 1998-12-15 Abb Research Ltd. Method for producing a semiconductor device comprising an implantation step
EP1680091B1 (en) 2003-10-10 2017-05-31 Veloxis Pharmaceuticals A/S A solid dosage form comprising a fibrate
US7923362B2 (en) 2005-06-08 2011-04-12 Telefunken Semiconductors Gmbh & Co. Kg Method for manufacturing a metal-semiconductor contact in semiconductor components
DE102005026301B3 (de) * 2005-06-08 2007-01-11 Atmel Germany Gmbh Verfahren zum Herstellen eines Metall- Halbleiter-Kontakts bei Halbleiterbauelementen
US10014383B2 (en) * 2014-12-17 2018-07-03 Infineon Technologies Ag Method for manufacturing a semiconductor device comprising a metal nitride layer and semiconductor device
EP3136426B1 (en) * 2015-08-24 2019-04-03 IMEC vzw Method for producing a junction field effect transistor on a semiconductor substrate
RU2650350C1 (ru) * 2017-02-21 2018-04-11 Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" Способ изготовления полупроводникового прибора

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CH461646A (de) * 1967-04-18 1968-08-31 Ibm Feld-Effekt-Transistor und Verfahren zu seiner Herstellung
GB1261723A (en) * 1968-03-11 1972-01-26 Associated Semiconductor Mft Improvements in and relating to semiconductor devices
US3895966A (en) * 1969-09-30 1975-07-22 Sprague Electric Co Method of making insulated gate field effect transistor with controlled threshold voltage
GB1289740A (show.php) * 1969-12-24 1972-09-20
GB1355806A (en) * 1970-12-09 1974-06-05 Mullard Ltd Methods of manufacturing a semiconductor device
JPS4953780A (show.php) 1972-09-28 1974-05-24
US4033788A (en) * 1973-12-10 1977-07-05 Hughes Aircraft Company Ion implanted gallium arsenide semiconductor devices fabricated in semi-insulating gallium arsenide substrates
US3912546A (en) * 1974-12-06 1975-10-14 Hughes Aircraft Co Enhancement mode, Schottky-barrier gate gallium arsenide field effect transistor
US4029522A (en) * 1976-06-30 1977-06-14 International Business Machines Corporation Method to fabricate ion-implanted layers with abrupt edges to reduce the parasitic resistance of Schottky barrier fets and bipolar transistors
US4063964A (en) * 1976-12-27 1977-12-20 International Business Machines Corporation Method for forming a self-aligned schottky barrier device guardring

Also Published As

Publication number Publication date
FR2358751A1 (fr) 1978-02-10
US4173063A (en) 1979-11-06
DE2631873A1 (de) 1978-01-19
FR2358751B1 (show.php) 1982-11-19
DE2631873C2 (de) 1986-07-31
JPS6129556B2 (show.php) 1986-07-07
JPS5310284A (en) 1978-01-30
GB1522296A (en) 1978-08-23

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