IT8025035A0 - Procedimento per formare contatti ohmici di bassa resistenza su ossidi semiconduttori. - Google Patents

Procedimento per formare contatti ohmici di bassa resistenza su ossidi semiconduttori.

Info

Publication number
IT8025035A0
IT8025035A0 IT8025035A IT2503580A IT8025035A0 IT 8025035 A0 IT8025035 A0 IT 8025035A0 IT 8025035 A IT8025035 A IT 8025035A IT 2503580 A IT2503580 A IT 2503580A IT 8025035 A0 IT8025035 A0 IT 8025035A0
Authority
IT
Italy
Prior art keywords
procedure
low resistance
ohmic contacts
forming low
resistance ohmic
Prior art date
Application number
IT8025035A
Other languages
English (en)
Other versions
IT1133634B (it
Inventor
Jagdish Narayan
Original Assignee
Us Energy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Us Energy filed Critical Us Energy
Publication of IT8025035A0 publication Critical patent/IT8025035A0/it
Application granted granted Critical
Publication of IT1133634B publication Critical patent/IT1133634B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/14—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by chemical deposition
    • H01C17/18—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by chemical deposition without using electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/093—Laser beam treatment in general
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/094—Laser beam treatment of compound devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
IT25035/80A 1979-10-01 1980-09-30 Procedimento per formare contatti ihmici di bassa resistenza su ossidi semiconduttori IT1133634B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/080,725 US4261764A (en) 1979-10-01 1979-10-01 Laser method for forming low-resistance ohmic contacts on semiconducting oxides

Publications (2)

Publication Number Publication Date
IT8025035A0 true IT8025035A0 (it) 1980-09-30
IT1133634B IT1133634B (it) 1986-07-09

Family

ID=22159210

Family Applications (1)

Application Number Title Priority Date Filing Date
IT25035/80A IT1133634B (it) 1979-10-01 1980-09-30 Procedimento per formare contatti ihmici di bassa resistenza su ossidi semiconduttori

Country Status (4)

Country Link
US (1) US4261764A (it)
JP (1) JPS5660016A (it)
GB (1) GB2059681B (it)
IT (1) IT1133634B (it)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4359486A (en) * 1980-08-28 1982-11-16 Siemens Aktiengesellschaft Method of producing alloyed metal contact layers on crystal-orientated semiconductor surfaces by energy pulse irradiation
DE3437072A1 (de) * 1984-10-09 1986-04-10 Dieter Prof. Dr. Linz Bäuerle Verfahren zur herstellung von leiterbahnen und/oder elektroden auf dielektrischem material
US4615765A (en) * 1985-02-01 1986-10-07 General Electric Company Self-registered, thermal processing technique using a pulsed heat source
US4920070A (en) * 1987-02-19 1990-04-24 Fujitsu Limited Method for forming wirings for a semiconductor device by filling very narrow via holes
US4895812A (en) * 1988-12-14 1990-01-23 Gte Laboratories Incorporated Method of making ohmic contact to ferroelectric semiconductors
US5105260A (en) * 1989-10-31 1992-04-14 Sgs-Thomson Microelectronics, Inc. Rf transistor package with nickel oxide barrier
US5408574A (en) * 1989-12-01 1995-04-18 Philip Morris Incorporated Flat ceramic heater having discrete heating zones
US5281845A (en) * 1991-04-30 1994-01-25 Gte Control Devices Incorporated PTCR device
US5316973A (en) * 1991-04-30 1994-05-31 Gte Control Devices Incorporated Method of making semiconducting ferroelectric PTCR devices
US5498850A (en) * 1992-09-11 1996-03-12 Philip Morris Incorporated Semiconductor electrical heater and method for making same
US5344793A (en) * 1993-03-05 1994-09-06 Siemens Aktiengesellschaft Formation of silicided junctions in deep sub-micron MOSFETs by defect enhanced CoSi2 formation
US5468936A (en) * 1993-03-23 1995-11-21 Philip Morris Incorporated Heater having a multiple-layer ceramic substrate and method of fabrication
US5780806A (en) * 1995-07-25 1998-07-14 Lockheed Idaho Technologies Company Laser ablation system, and method of decontaminating surfaces
US5720859A (en) * 1996-06-03 1998-02-24 Raychem Corporation Method of forming an electrode on a substrate
US7554055B2 (en) * 2005-05-03 2009-06-30 Hitachi Global Storage Technologies Netherlands B.V. Method for making ohmic contact to silicon structures with low thermal loads
US10661370B2 (en) * 2015-09-21 2020-05-26 Siemens Energy, Inc. Formation and repair of oxide dispersion strengthened alloys by alloy melting with oxide injection

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6413441A (it) * 1964-11-19 1966-05-20
US3323947A (en) * 1964-12-17 1967-06-06 Bell Telephone Labor Inc Method for making electrode connections to potassium tantalate-niobate
US3600797A (en) * 1967-12-26 1971-08-24 Hughes Aircraft Co Method of making ohmic contacts to semiconductor bodies by indirect ion implantation
DE1800193A1 (de) * 1968-10-01 1970-05-14 Telefunken Patent Verfahren zum Herstellen von Kontakten
US3666567A (en) * 1970-01-15 1972-05-30 Hughes Aircraft Co Method of forming an ohmic contact region in a thin semiconductor layer
JPS5130437B1 (it) * 1970-03-25 1976-09-01
US3955013A (en) * 1972-12-04 1976-05-04 Grumman Aerospace Corporation Novel process for producing a thin film of germanium
US4042006A (en) * 1973-01-05 1977-08-16 Siemens Aktiengesellschaft Pyrolytic process for producing a band-shaped metal layer on a substrate
US4147563A (en) * 1978-08-09 1979-04-03 The United States Of America As Represented By The United States Department Of Energy Method for forming p-n junctions and solar-cells by laser-beam processing

Also Published As

Publication number Publication date
JPS5660016A (en) 1981-05-23
IT1133634B (it) 1986-07-09
US4261764A (en) 1981-04-14
GB2059681B (en) 1983-09-14
GB2059681A (en) 1981-04-23

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