IN2014KN01122A - - Google Patents

Info

Publication number
IN2014KN01122A
IN2014KN01122A IN1122KON2014A IN2014KN01122A IN 2014KN01122 A IN2014KN01122 A IN 2014KN01122A IN 1122KON2014 A IN1122KON2014 A IN 1122KON2014A IN 2014KN01122 A IN2014KN01122 A IN 2014KN01122A
Authority
IN
India
Prior art keywords
agnw
cnts
proceed
tubes
mixtures
Prior art date
Application number
Other languages
English (en)
Inventor
Werner Stockum
Oliver Doll
Ingo Koehler
Christian Matuschek
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Publication of IN2014KN01122A publication Critical patent/IN2014KN01122A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • H01L31/1888—Manufacture of transparent electrodes, e.g. TCO, ITO methods for etching transparent electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/826—Multilayers, e.g. opaque multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/236—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers using printing techniques, e.g. applying the etch liquid using an ink jet printer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Dispersion Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Surface Treatment Of Glass (AREA)
  • Catalysts (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Electric Cables (AREA)
IN1122KON2014 2011-10-27 2012-09-28 IN2014KN01122A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP11008621.2A EP2587564A1 (en) 2011-10-27 2011-10-27 Selective etching of a matrix comprising silver nanowires or carbon nanotubes
PCT/EP2012/004095 WO2013060409A1 (en) 2011-10-27 2012-09-28 Selective etching of a matrix comprising silver nano wires

Publications (1)

Publication Number Publication Date
IN2014KN01122A true IN2014KN01122A (ko) 2015-10-16

Family

ID=46968144

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1122KON2014 IN2014KN01122A (ko) 2011-10-27 2012-09-28

Country Status (10)

Country Link
US (1) US9379326B2 (ko)
EP (2) EP2587564A1 (ko)
JP (1) JP2015501541A (ko)
KR (1) KR20140085563A (ko)
CN (1) CN103907216A (ko)
BR (1) BR112014009871A2 (ko)
IN (1) IN2014KN01122A (ko)
SG (1) SG11201401650UA (ko)
TW (1) TWI561459B (ko)
WO (1) WO2013060409A1 (ko)

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CN105144346B (zh) 2013-02-21 2017-12-15 恩耐公司 多层结构的激光刻图
US9842665B2 (en) 2013-02-21 2017-12-12 Nlight, Inc. Optimization of high resolution digitally encoded laser scanners for fine feature marking
EP2830110A1 (en) 2013-07-22 2015-01-28 Heraeus Precious Metals GmbH & Co. KG Patterning of a composition comprising silver nanowires
WO2015067339A1 (en) * 2013-11-08 2015-05-14 Merck Patent Gmbh Method for structuring a transparent conductive matrix comprising silver nano materials
US10069271B2 (en) 2014-06-02 2018-09-04 Nlight, Inc. Scalable high power fiber laser
US10618131B2 (en) 2014-06-05 2020-04-14 Nlight, Inc. Laser patterning skew correction
KR102209680B1 (ko) * 2014-06-27 2021-01-29 동우 화인켐 주식회사 금속막의 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조방법
US9482477B2 (en) 2014-07-28 2016-11-01 Northrop Grumman Systems Corporation Nano-thermal agents for enhanced interfacial thermal conductance
CN105720463B (zh) 2014-08-01 2021-05-14 恩耐公司 光纤和光纤传输的激光器中的背向反射保护与监控
CN105374696B (zh) * 2014-08-05 2018-08-28 上海蓝沛信泰光电科技有限公司 一种利用激光刻蚀制备透明金属引线结构的方法
KR102254561B1 (ko) * 2014-09-30 2021-05-21 동우 화인켐 주식회사 은 나노 와이어의 식각액 조성물
KR102323848B1 (ko) * 2014-09-30 2021-11-09 동우 화인켐 주식회사 은 나노 와이어의 식각액 조성물
US9296614B1 (en) 2014-11-12 2016-03-29 Corning Incorporated Substrate such as for use with carbon nanotubes
US9837783B2 (en) 2015-01-26 2017-12-05 Nlight, Inc. High-power, single-mode fiber sources
CN106155429A (zh) * 2015-03-25 2016-11-23 联想(北京)有限公司 电子设备、触控部件及其设置方法
US10050404B2 (en) 2015-03-26 2018-08-14 Nlight, Inc. Fiber source with cascaded gain stages and/or multimode delivery fiber with low splice loss
US10829605B2 (en) 2015-07-02 2020-11-10 Sabic Global Technologies B.V. Process and material for growth of adsorbed compound via nanoscale-controlled resistive heating and uses thereof
US10520671B2 (en) 2015-07-08 2019-12-31 Nlight, Inc. Fiber with depressed central index for increased beam parameter product
CN104962919B (zh) * 2015-07-31 2017-09-22 合肥银派科技有限公司 一种银纳米线的刻蚀液及刻蚀方法
US9447504B1 (en) * 2015-09-28 2016-09-20 Xerox Corporation Method of etching using inkjet printing
US11179807B2 (en) 2015-11-23 2021-11-23 Nlight, Inc. Fine-scale temporal control for laser material processing
US10434600B2 (en) 2015-11-23 2019-10-08 Nlight, Inc. Fine-scale temporal control for laser material processing
WO2017091606A1 (en) 2015-11-23 2017-06-01 Nlight, Inc. Predictive modification of laser diode drive current waveform in high power laser systems
US10295820B2 (en) 2016-01-19 2019-05-21 Nlight, Inc. Method of processing calibration data in 3D laser scanner systems
JP7221579B2 (ja) * 2016-03-22 2023-02-14 富士電機株式会社 樹脂組成物
US10732439B2 (en) 2016-09-29 2020-08-04 Nlight, Inc. Fiber-coupled device for varying beam characteristics
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CN107068412B (zh) * 2016-12-08 2018-10-16 常州大学 一种高功率的长线性超级电容器及其制备方法
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CN109835867B (zh) * 2017-11-24 2023-07-14 中芯国际集成电路制造(上海)有限公司 刻蚀溶液和刻蚀方法
CN109045368A (zh) * 2018-07-04 2018-12-21 郑州大学第附属医院 一种医用高强度高韧性可吸收复合生物材料
CN110444632A (zh) * 2019-07-08 2019-11-12 绵阳金能移动能源有限公司 一种采用石墨烯导电膜制备柔性太阳电池前电极的方法
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Also Published As

Publication number Publication date
EP2587564A1 (en) 2013-05-01
US9379326B2 (en) 2016-06-28
BR112014009871A2 (pt) 2017-04-18
CN103907216A (zh) 2014-07-02
US20140291287A1 (en) 2014-10-02
KR20140085563A (ko) 2014-07-07
TWI561459B (en) 2016-12-11
TW201323319A (zh) 2013-06-16
JP2015501541A (ja) 2015-01-15
WO2013060409A1 (en) 2013-05-02
SG11201401650UA (en) 2014-05-29
EP2771919A1 (en) 2014-09-03

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