BR112014009871A2 - ataque químico seletivo de uma matriz compreendendo nanofios de prata - Google Patents
ataque químico seletivo de uma matriz compreendendo nanofios de prataInfo
- Publication number
- BR112014009871A2 BR112014009871A2 BR112014009871A BR112014009871A BR112014009871A2 BR 112014009871 A2 BR112014009871 A2 BR 112014009871A2 BR 112014009871 A BR112014009871 A BR 112014009871A BR 112014009871 A BR112014009871 A BR 112014009871A BR 112014009871 A2 BR112014009871 A2 BR 112014009871A2
- Authority
- BR
- Brazil
- Prior art keywords
- silver nanowires
- matrix
- selective chemical
- chemical attack
- agnw
- Prior art date
Links
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title abstract 3
- 239000002042 Silver nanowire Substances 0.000 title abstract 3
- 239000011159 matrix material Substances 0.000 title abstract 3
- 239000000126 substance Substances 0.000 title 1
- 238000000034 method Methods 0.000 abstract 3
- 238000003486 chemical etching Methods 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 239000002041 carbon nanotube Substances 0.000 abstract 1
- 229910021393 carbon nanotube Inorganic materials 0.000 abstract 1
- 229920002457 flexible plastic Polymers 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
- H01L31/1888—Manufacture of transparent electrodes, e.g. TCO, ITO methods for etching transparent electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/80—Constructional details
- H10K10/82—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/826—Multilayers, e.g. opaque multilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/236—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers using printing techniques, e.g. applying the etch liquid using an ink jet printer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
resumo patente de invenção: "ataque químico seletivo de uma matriz compreendendo nanofios de prata". a presente invenção refere-se a um método para estruturar seletivamente uma matriz de polímero compreendendo agnw (nanofios de prata) ou cnts (nanotubos de carbono) ou compreendendo misturas de agnw e cnts sobre uma subestrutura de plástico flexível ou folha de vidro sólida. o método também inclui uma composição de ataque químico adequada, a qual permite seguir o método em uma produção em massa.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP11008621.2A EP2587564A1 (en) | 2011-10-27 | 2011-10-27 | Selective etching of a matrix comprising silver nanowires or carbon nanotubes |
PCT/EP2012/004095 WO2013060409A1 (en) | 2011-10-27 | 2012-09-28 | Selective etching of a matrix comprising silver nano wires |
Publications (1)
Publication Number | Publication Date |
---|---|
BR112014009871A2 true BR112014009871A2 (pt) | 2017-04-18 |
Family
ID=46968144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112014009871A BR112014009871A2 (pt) | 2011-10-27 | 2012-09-28 | ataque químico seletivo de uma matriz compreendendo nanofios de prata |
Country Status (10)
Country | Link |
---|---|
US (1) | US9379326B2 (pt) |
EP (2) | EP2587564A1 (pt) |
JP (1) | JP2015501541A (pt) |
KR (1) | KR20140085563A (pt) |
CN (1) | CN103907216A (pt) |
BR (1) | BR112014009871A2 (pt) |
IN (1) | IN2014KN01122A (pt) |
SG (1) | SG11201401650UA (pt) |
TW (1) | TWI561459B (pt) |
WO (1) | WO2013060409A1 (pt) |
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US9199870B2 (en) | 2012-05-22 | 2015-12-01 | Corning Incorporated | Electrostatic method and apparatus to form low-particulate defect thin glass sheets |
US9842665B2 (en) | 2013-02-21 | 2017-12-12 | Nlight, Inc. | Optimization of high resolution digitally encoded laser scanners for fine feature marking |
US10100393B2 (en) | 2013-02-21 | 2018-10-16 | Nlight, Inc. | Laser patterning of multi-layer structures |
US10464172B2 (en) | 2013-02-21 | 2019-11-05 | Nlight, Inc. | Patterning conductive films using variable focal plane to control feature size |
US9537042B2 (en) | 2013-02-21 | 2017-01-03 | Nlight, Inc. | Non-ablative laser patterning |
EP2830110A1 (en) | 2013-07-22 | 2015-01-28 | Heraeus Precious Metals GmbH & Co. KG | Patterning of a composition comprising silver nanowires |
KR20160084428A (ko) * | 2013-11-08 | 2016-07-13 | 메르크 파텐트 게엠베하 | 은 나노 재료를 포함하는 투명 전도성 기질의 구조화 방법 |
US10069271B2 (en) | 2014-06-02 | 2018-09-04 | Nlight, Inc. | Scalable high power fiber laser |
US10618131B2 (en) | 2014-06-05 | 2020-04-14 | Nlight, Inc. | Laser patterning skew correction |
KR102209680B1 (ko) * | 2014-06-27 | 2021-01-29 | 동우 화인켐 주식회사 | 금속막의 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조방법 |
US9482477B2 (en) | 2014-07-28 | 2016-11-01 | Northrop Grumman Systems Corporation | Nano-thermal agents for enhanced interfacial thermal conductance |
CN105720463B (zh) | 2014-08-01 | 2021-05-14 | 恩耐公司 | 光纤和光纤传输的激光器中的背向反射保护与监控 |
CN105374696B (zh) * | 2014-08-05 | 2018-08-28 | 上海蓝沛信泰光电科技有限公司 | 一种利用激光刻蚀制备透明金属引线结构的方法 |
KR102254561B1 (ko) * | 2014-09-30 | 2021-05-21 | 동우 화인켐 주식회사 | 은 나노 와이어의 식각액 조성물 |
KR102323848B1 (ko) * | 2014-09-30 | 2021-11-09 | 동우 화인켐 주식회사 | 은 나노 와이어의 식각액 조성물 |
US9296614B1 (en) | 2014-11-12 | 2016-03-29 | Corning Incorporated | Substrate such as for use with carbon nanotubes |
US9837783B2 (en) | 2015-01-26 | 2017-12-05 | Nlight, Inc. | High-power, single-mode fiber sources |
CN106155429A (zh) * | 2015-03-25 | 2016-11-23 | 联想(北京)有限公司 | 电子设备、触控部件及其设置方法 |
US10050404B2 (en) | 2015-03-26 | 2018-08-14 | Nlight, Inc. | Fiber source with cascaded gain stages and/or multimode delivery fiber with low splice loss |
US10829605B2 (en) | 2015-07-02 | 2020-11-10 | Sabic Global Technologies B.V. | Process and material for growth of adsorbed compound via nanoscale-controlled resistive heating and uses thereof |
CN107924023B (zh) | 2015-07-08 | 2020-12-01 | 恩耐公司 | 具有用于增加的光束参数乘积的中心折射率受抑制的纤维 |
CN104962919B (zh) * | 2015-07-31 | 2017-09-22 | 合肥银派科技有限公司 | 一种银纳米线的刻蚀液及刻蚀方法 |
US11179807B2 (en) | 2015-11-23 | 2021-11-23 | Nlight, Inc. | Fine-scale temporal control for laser material processing |
CN108367389B (zh) | 2015-11-23 | 2020-07-28 | 恩耐公司 | 激光加工方法和装置 |
US10074960B2 (en) | 2015-11-23 | 2018-09-11 | Nlight, Inc. | Predictive modification of laser diode drive current waveform in order to optimize optical output waveform in high power laser systems |
WO2017127573A1 (en) | 2016-01-19 | 2017-07-27 | Nlight, Inc. | Method of processing calibration data in 3d laser scanner systems |
JP7221579B2 (ja) * | 2016-03-22 | 2023-02-14 | 富士電機株式会社 | 樹脂組成物 |
US10730785B2 (en) | 2016-09-29 | 2020-08-04 | Nlight, Inc. | Optical fiber bending mechanisms |
EP3519871A1 (en) | 2016-09-29 | 2019-08-07 | NLIGHT, Inc. | Adjustable beam characteristics |
US10732439B2 (en) | 2016-09-29 | 2020-08-04 | Nlight, Inc. | Fiber-coupled device for varying beam characteristics |
CN107068412B (zh) * | 2016-12-08 | 2018-10-16 | 常州大学 | 一种高功率的长线性超级电容器及其制备方法 |
CN110651218B (zh) | 2017-04-04 | 2022-03-01 | 恩耐公司 | 用于检流计扫描仪校准的设备、系统和方法 |
US10614928B2 (en) | 2017-04-17 | 2020-04-07 | Philippe Hansen-Estruch | Biodegradable flexible lightweight energy storage composite and methods of making the same |
CN109835867B (zh) * | 2017-11-24 | 2023-07-14 | 中芯国际集成电路制造(上海)有限公司 | 刻蚀溶液和刻蚀方法 |
CN109045368A (zh) * | 2018-07-04 | 2018-12-21 | 郑州大学第附属医院 | 一种医用高强度高韧性可吸收复合生物材料 |
CN110444632A (zh) * | 2019-07-08 | 2019-11-12 | 绵阳金能移动能源有限公司 | 一种采用石墨烯导电膜制备柔性太阳电池前电极的方法 |
WO2021050791A1 (en) * | 2019-09-10 | 2021-03-18 | Washington University | Compositions of conductive polymers and methods for making and using same |
CN112185608B (zh) * | 2020-10-28 | 2021-11-30 | 碳星科技(天津)有限公司 | 一种新型双层导电网络结构的柔性透明电极及其制备方法 |
CN114517094B (zh) * | 2020-11-20 | 2023-08-22 | 苏州阿特斯阳光电力科技有限公司 | 一种丝网印刷电化学刻蚀用浆料及其制备方法和应用 |
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EP1378947A1 (en) * | 2002-07-01 | 2004-01-07 | Interuniversitair Microelektronica Centrum Vzw | Semiconductor etching paste and the use thereof for localised etching of semiconductor substrates |
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EP2415849A4 (en) * | 2009-03-30 | 2014-12-17 | Toray Industries | CONDUCTIVE FILM ELIMINATING AGENT AND METHOD FOR REMOVING CONDUCTIVE FILM |
WO2011032629A1 (en) * | 2009-09-18 | 2011-03-24 | Merck Patent Gmbh | Ink jet printable etching inks and associated process |
TWI549900B (zh) * | 2010-03-23 | 2016-09-21 | 坎畢歐科技公司 | 奈米結構透明導體之圖案化蝕刻 |
ES2535873T3 (es) | 2010-05-21 | 2015-05-18 | Merck Patent Gmbh | Grabado químico selectivo de una matriz polimérica de nanotubos de carbono (NTC) sobre una subestructura plástica |
US8460964B2 (en) * | 2010-11-17 | 2013-06-11 | E I Du Pont De Nemours And Company | Method for producing an array of thin-film photovoltaic cells having a totally separated integrated bypass diode and method for producing a panel incorporating the same |
WO2012083082A1 (en) * | 2010-12-15 | 2012-06-21 | Sun Chemical Corporation | Printable etchant compositions for etching silver nanoware-based transparent, conductive film |
-
2011
- 2011-10-27 EP EP11008621.2A patent/EP2587564A1/en not_active Withdrawn
-
2012
- 2012-09-28 IN IN1122KON2014 patent/IN2014KN01122A/en unknown
- 2012-09-28 BR BR112014009871A patent/BR112014009871A2/pt not_active IP Right Cessation
- 2012-09-28 KR KR1020147014157A patent/KR20140085563A/ko not_active Application Discontinuation
- 2012-09-28 JP JP2014537509A patent/JP2015501541A/ja not_active Ceased
- 2012-09-28 US US14/354,743 patent/US9379326B2/en not_active Expired - Fee Related
- 2012-09-28 SG SG11201401650UA patent/SG11201401650UA/en unknown
- 2012-09-28 CN CN201280052467.XA patent/CN103907216A/zh active Pending
- 2012-09-28 WO PCT/EP2012/004095 patent/WO2013060409A1/en active Application Filing
- 2012-09-28 EP EP12766899.4A patent/EP2771919A1/en not_active Withdrawn
- 2012-10-26 TW TW101139804A patent/TWI561459B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN103907216A (zh) | 2014-07-02 |
JP2015501541A (ja) | 2015-01-15 |
US20140291287A1 (en) | 2014-10-02 |
TW201323319A (zh) | 2013-06-16 |
US9379326B2 (en) | 2016-06-28 |
IN2014KN01122A (pt) | 2015-10-16 |
WO2013060409A1 (en) | 2013-05-02 |
EP2587564A1 (en) | 2013-05-01 |
TWI561459B (en) | 2016-12-11 |
KR20140085563A (ko) | 2014-07-07 |
EP2771919A1 (en) | 2014-09-03 |
SG11201401650UA (en) | 2014-05-29 |
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