JP7221579B2 - 樹脂組成物 - Google Patents
樹脂組成物 Download PDFInfo
- Publication number
- JP7221579B2 JP7221579B2 JP2016056429A JP2016056429A JP7221579B2 JP 7221579 B2 JP7221579 B2 JP 7221579B2 JP 2016056429 A JP2016056429 A JP 2016056429A JP 2016056429 A JP2016056429 A JP 2016056429A JP 7221579 B2 JP7221579 B2 JP 7221579B2
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- Prior art keywords
- sealing material
- fluororesin
- mass
- resin
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Images
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
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Description
本発明は、第1実施形態によれば樹脂組成物である。当該樹脂組成物は、熱硬化性樹脂主剤と、硬化剤と、無機充填材と、ポリフッ化ビニリデン、ポリクロロトリフルオロエチレン、テトラフルオロエチレン/パーフルオロ(アルキルビニルエーテル)/クロロトリフルオロエチレン共重合体から選択される1以上のフッ素樹脂粉末とを含む。
本発明は一実施形態によれば、半導体装置であって、積層基板上に実装された半導体素子と出力端子とを導電性接続部材にて接続し、封止材にて封止してなる。そして、封止材の外周部の少なくとも一部が、第1実施形態に記載の樹脂組成物から構成される。
実施例1~6では、図1に示すパワーモジュールの試験用デバイスを作製し、特性を評価した。第2封止材を調製した。熱硬化性樹脂主剤のエポキシ樹脂として、ビスフェノールAエポキシ樹脂と脂環式エポキシ樹脂の質量比3:2での混合物(ペルノックス社製ME272)を用いた。硬化剤として、シクロヘキサン-1,2ジカルボン酸無水物(ペルノックス社製HV136)を用いた。これらの主剤と硬化剤との組み合わせを樹脂の基本組成とした。なお、硬化剤は、熱硬化性樹脂主剤100質量部に対して、酸無水物硬化剤が100質量部となるように用いた。さらに、無機充填剤として、平均粒径5μmの溶融シリカ粒子(瀧森社製、商品名「ZA-30」)を用いた。添加量は、熱硬化性樹脂主剤と硬化剤の総質量を100質量部としたときに、前記無機充填剤の総質量が250質量部となるように調合した。平均粒径が20μmとなるように粉末化したフッ素樹脂粉末は、下記に示す量で混合した。以下のフッ素樹脂粉末の含有量は、熱硬化性樹脂主剤、硬化剤、無機充填材、フッ素樹脂粉末の総質量を100%とした場合のフッ素樹脂粉末の質量%で表した。また、第2封止材には、封止材を着色するために青色顔料を混合した。
実施例7~9では、上記1と同様にして、フッ素樹脂粉末PVDFを30質量%配合した第2封止材を調製した。そして、上記1と同様にして図1に示す部材を組み立て、第1封止材により封止し、加熱硬化した。次いで、第2封止材による封止層を外周部に形成した。形成法及び加熱硬化条件は、上記1と同様としたが、厚みを、0.2mm~2mmで変化させた。また、第2封止材を設けず、第1封止材のみで封止した試験デバイスを作製し、比較例1とした。比較例1の試験デバイスでは、第1封止材に青色顔料を添加して着色した。
耐熱性評価の一つとして、試験用デバイスをヒートサイクル試験して、評価した。具体的には、ヒートサイクルは、-40℃で30分間保持し、その後175℃で30分間保持することを500回繰り返し、チップと封止樹脂の乖離がない場合を「良好」とし、500回に達成する前にチップと封止樹脂が乖離した場合を「不良」とした。なお、剥離は、目視および倍率500倍の光学顕微鏡により確認した。
作業性は、パワーモジュール等の半導体装置を作成する際に、端子ケースに樹脂を流し込みやすいか否かを示す。樹脂の粘度が高いと、端子ケースに流し込みにくくなり、作業の手間が増え、半導体装置のパッケージを作成するための工数が増えるため、好ましくない。また、粘度が高いと泡抜けが悪く、また、表面凹凸が生じやすく好ましくない。このため、実施例および比較例において、作業性も評価した。作業性は、樹脂の粘度により評価した。例えば、25℃での樹脂の粘度が40Pa・a以下である場合、作業性が良好になるため、作業性を「良好」に、40Pa・aを超える場合、作業性が悪化するため、作業性を「不良」とした。粘度は、JIS Z8803に基づき、単一円筒回転型粘度計により測定した。
耐熱性の評価として、上記ヒートサイクル試験後、試験用デバイスの外周部にある封止材の退色性を評価した。すなわち、実施例ではフッ素樹脂粉末を含む第2封止材の退色性、比較例ではフッ素樹脂粉末を含まない封止材の退色性を評価した。退色性は、色彩色差計を用いて測定し、JIS Z8781-4:2013に規定されたL*a*b*表色系を用いて評価した。L*a*b*表色系は、明度をL*色相と、彩度を示す色度をa*、b*とし、これら三つの数値から色を表すものである。本実施例においては、用いたフッ素樹脂粉末は透明であり、第2封止材を青色に着色したため、色の変化は、b*値で表すことができる。一般的に、初期値に対して、変化の幅が18以上となるものを不良とすることができる。具体的には、本試験においては、上記ヒートサイクル試験前の第2封止材の初期b*値が-33であったのに対して、ヒートサイクル試験後のb*値が、-15より大きくなるものを不良とした。評価用の試験片は、試験用デバイス外周部の封止材から2mm角に切りだした。なお、変化の幅を18以上とする試験基準は、本実施例の特定の態様について適用するものであって、本発明を限定するものではない。
表1に実施例1~6の評価結果を示す。第2封止層を設けずに、第1封止材のみを設けた場合と比較して、第2封止層を用いることにより外周部の酸化状態が抑制された。これはヒートサイクル試験によるチップと封止樹脂が乖離の頻度から判断される。しかし、フッ素樹脂粉末の添加量が1質量%以下では、退色を抑える効果が充分ではなかった。また、添加量が60質量%以上では増粘し、作業性が低下した。
2 積層基板
21 第2導電性板
22 絶縁基板
23 第1導電性板
3 ヒートスプレッダ
4 ケース
5 出力端子
6 導電性接続部材
7 第1封止材
8 第2封止材
10 接合層
11 プリント基板
12 主端子N
13 主端子P
14 主端子U
Claims (9)
- 熱硬化性樹脂主剤と、硬化剤と、無機充填材と、ポリフッ化ビニリデンからなるフッ素樹脂、ポリクロロトリフルオロエチレンからなるフッ素樹脂、テトラフルオロエチレン/パーフルオロ(アルキルビニルエーテル)/クロロトリフルオロエチレン共重合体からなるフッ素樹脂から選択される1以上のフッ素樹脂からなる粉末とを含む樹脂組成物であって、
前記フッ素樹脂からなる粉末の平均粒子径が、10~200μmであり、前記フッ素樹脂からなる粉末が、前記熱硬化性樹脂主剤、前記硬化剤、前記無機充填材、及び前記フッ素樹脂からなる粉末の総質量を100%とした場合に、1質量%より多く、50質量%未満含まれ、
前記フッ素樹脂からなる粉末が、前記熱硬化性樹脂主剤、前記硬化剤、前記無機充填材、及び前記フッ素樹脂粉末の総質量を100%とした場合に、30質量%以上であって、50質量%未満含まれている、電子機器の封止に用いられる、樹脂組成物。 - 前記熱硬化性樹脂主剤が、エポキシ樹脂である、請求項1に記載の樹脂組成物。
- 前記硬化剤が、酸無水物系硬化剤である、請求項1または2に記載の樹脂組成物。
- 積層基板上に実装された半導体素子と出力端子とを導電性接続部材にて接続し、封止材にて封止してなる半導体装置であって、前記封止材が前記積層基板の沿面及び前記半導体素子を絶縁保護する第1封止材と、当該第1封止材を覆って、当該封止材の外周部の少なくとも一部を構成する第2封止材とを備え、
当該第2封止材が、熱硬化性樹脂主剤と、硬化剤と、無機充填材と、ポリフッ化ビニリデンからなるフッ素樹脂、ポリクロロトリフルオロエチレンからなるフッ素樹脂、テトラフルオロエチレン/パーフルオロ(アルキルビニルエーテル)/クロロトリフルオロエチレン共重合体からなるフッ素樹脂から選択される1以上のフッ素樹脂からなる粉末とを含む樹脂組成物であって、
前記フッ素樹脂からなる粉末の平均粒子径が、10~200μmであり、前記フッ素樹脂からなる粉末が、前記熱硬化性樹脂主剤、前記硬化剤、前記無機充填材、及び前記フッ素樹脂からなる粉末の総質量を100%とした場合に、1質量%より多く、50質量%未満含まれている樹脂組成物を含む、半導体装置。 - 前記外周部の少なくとも一部が、外周面から1.0~2.0mmの厚みの部分である、請求項4に記載の半導体装置。
- 前記熱硬化性樹脂主剤が、脂環式エポキシ樹脂とビスフェノールA型エポキシ樹脂との混合物である、請求項4または5に記載の半導体装置。
- 前記第1封止材が、脂環式エポキシ樹脂とビスフェノールA型エポキシ樹脂とを、1:1~4:1の質量比で含む、請求項4~6のいずれか1項に記載の半導体装置。
- 前記導電性接続部材が、ワイヤ、ピン、またはリードフレームのいずれかを含む、請求項4~7のいずれか1項に記載の半導体装置。
- 前記半導体素子が、Si半導体素子、SiC半導体素子、またはGaN半導体素子のいずれかを含む、請求項4~8のいずれか1項に記載の半導体装置。
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