JP7476595B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP7476595B2 JP7476595B2 JP2020048364A JP2020048364A JP7476595B2 JP 7476595 B2 JP7476595 B2 JP 7476595B2 JP 2020048364 A JP2020048364 A JP 2020048364A JP 2020048364 A JP2020048364 A JP 2020048364A JP 7476595 B2 JP7476595 B2 JP 7476595B2
- Authority
- JP
- Japan
- Prior art keywords
- sealing layer
- layer
- silane coupling
- coupling agent
- fluorine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 89
- 238000007789 sealing Methods 0.000 claims description 209
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 110
- 229910052731 fluorine Inorganic materials 0.000 claims description 91
- 239000011737 fluorine Substances 0.000 claims description 90
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 88
- 229920005989 resin Polymers 0.000 claims description 59
- 239000011347 resin Substances 0.000 claims description 59
- 229920001187 thermosetting polymer Polymers 0.000 claims description 50
- 239000003822 epoxy resin Substances 0.000 claims description 45
- 229920000647 polyepoxide Polymers 0.000 claims description 45
- 239000010954 inorganic particle Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 34
- 239000003566 sealing material Substances 0.000 claims description 29
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- 125000002723 alicyclic group Chemical group 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 239000004844 aliphatic epoxy resin Substances 0.000 claims description 8
- 125000001153 fluoro group Chemical group F* 0.000 claims description 6
- 125000000217 alkyl group Chemical group 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- 239000004962 Polyamide-imide Substances 0.000 claims description 3
- 229920002312 polyamide-imide Polymers 0.000 claims description 3
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- 238000010030 laminating Methods 0.000 claims 1
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- 238000001723 curing Methods 0.000 description 48
- 239000003795 chemical substances by application Substances 0.000 description 26
- 239000011256 inorganic filler Substances 0.000 description 26
- 229910003475 inorganic filler Inorganic materials 0.000 description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 21
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 239000010949 copper Substances 0.000 description 14
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 13
- 239000007943 implant Substances 0.000 description 13
- 239000002245 particle Substances 0.000 description 13
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- 239000000463 material Substances 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 10
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical group FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 6
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- 239000002184 metal Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- 150000008065 acid anhydrides Chemical class 0.000 description 5
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- 230000001771 impaired effect Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
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- 239000002356 single layer Substances 0.000 description 3
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- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
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- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
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- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
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- 230000002265 prevention Effects 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- NYIKUOULKCEZDO-UHFFFAOYSA-N triethoxy(3,3,4,4,5,5,6,6,6-nonafluorohexyl)silane Chemical compound CCO[Si](OCC)(OCC)CCC(F)(F)C(F)(F)C(F)(F)C(F)(F)F NYIKUOULKCEZDO-UHFFFAOYSA-N 0.000 description 2
- AVYKQOAMZCAHRG-UHFFFAOYSA-N triethoxy(3,3,4,4,5,5,6,6,7,7,8,8,8-tridecafluorooctyl)silane Chemical compound CCO[Si](OCC)(OCC)CCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F AVYKQOAMZCAHRG-UHFFFAOYSA-N 0.000 description 2
- MLXDKRSDUJLNAB-UHFFFAOYSA-N triethoxy(3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecyl)silane Chemical compound CCO[Si](OCC)(OCC)CCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F MLXDKRSDUJLNAB-UHFFFAOYSA-N 0.000 description 2
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 2
- 238000004078 waterproofing Methods 0.000 description 2
- LTVUCOSIZFEASK-MPXCPUAZSA-N (3ar,4s,7r,7as)-3a-methyl-3a,4,7,7a-tetrahydro-4,7-methano-2-benzofuran-1,3-dione Chemical compound C([C@H]1C=C2)[C@H]2[C@H]2[C@]1(C)C(=O)OC2=O LTVUCOSIZFEASK-MPXCPUAZSA-N 0.000 description 1
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 1
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 1
- FALRKNHUBBKYCC-UHFFFAOYSA-N 2-(chloromethyl)pyridine-3-carbonitrile Chemical compound ClCC1=NC=CC=C1C#N FALRKNHUBBKYCC-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
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- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910020882 Sn-Cu-Ni Inorganic materials 0.000 description 1
- 229910020935 Sn-Sb Inorganic materials 0.000 description 1
- 229910020932 Sn-Sb-Ag Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 229910008757 Sn—Sb Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001334 alicyclic compounds Chemical class 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
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- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
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- 239000008393 encapsulating agent Substances 0.000 description 1
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- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
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- 238000001125 extrusion Methods 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
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- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
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- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229940014800 succinic anhydride Drugs 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
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- 150000003512 tertiary amines Chemical class 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
- H01L2224/4009—Loop shape
- H01L2224/40095—Kinked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73221—Strap and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/84909—Post-treatment of the connector or bonding area
- H01L2224/8492—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Non-Metallic Protective Coatings For Printed Circuits (AREA)
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
X=(S×M)/(A×6.02×1023)
ここで、Sは無機粒子の比表面積であり、Mはフッ素系シランカップリング剤213cの分子量であり、Aはフッ素系シランカップリング剤213c一分子の専有面積である。シランカップリング剤の専有面積は、Si-O結合を半径とする円の面積とすることができ、A=0.13nm2とすることができる。
図1に示すパワーモジュールを製造した。プライマー層は、主成分がポリアミドであるハイマルHL1200F(日立化成)を、10μmの膜厚で、半導体素子、リードフレーム、積層基板、ケース、アルミワイヤ上に形成した。第1封止層は、熱硬化性樹脂と硬化剤と無機充填材を含む熱硬化性樹脂化合物を加熱硬化させて製造した。熱硬化性樹脂主剤としては、ビスフェノールA型エポキシと脂環式エポキシの質量比3:2の混合物ME276(ペルノックス製)を用い、酸無水物系硬化剤として、HV-138(ペルノックス製)をエポキシ樹脂の主剤に対して質量比で、1:1で添加した。無機充填材は、平均粒子径が40μmのシリカ(AGC製)を、エポキシ樹脂の主剤と硬化剤と無機充填材の総質量を100%とした場合に、73質量%となるように添加した。
上記(1)で製造したパワーモジュールを、40℃から175℃で、運転2秒、休止9秒の条件を1サイクルとして、パワーサイクル試験を行った。判定は、100Kサイクルを超えても電気特性に異常を生じない場合をパワーサイクル耐量「〇」、100Kサイクルに達する前に断線や異常電流など電気特性に異常を生じた場合をパワーサイクル耐量「×」とした。
第2封止層を、本発明の第2態様にて形成する場合のフッ素系シランカップリング剤の添加量について検討した。熱硬化性樹脂主剤、硬化剤、フッ素系シランカップリング剤はいずれも上記実施例1と同様のものを用い、第2封止層を構成する熱硬化性樹脂組成物を調製した。熱硬化性樹脂組成物の質量を100%とした場合の、フッ素系シランカップリング剤の添加量(含有量)を、1、3、4、6、8質量%と変化させ、硬化させて第2封止層を形成した。第2封止層表面の水に対する接触角を、接触角計を用いて測定した。また、第2封止層のガラス転移温度(Tg)を、TMA(熱機械分析)を用いて測定した。結果を図2に示す。図2より、フッ素系シランカップリング剤の添加量が増加すると、水に対する接触角は増大し、撥水性は向上したものの、Tgは低下することがわかった。所望の撥水性、Tgは半導体装置の仕様によって異なるが、例えば、水の接触角が90°以上、Tgが190℃以上を好ましい仕様とする場合であって、フッ素系シランカップリング剤として、CF3(CF2)3(CH2)2Si(OC2H5)3を用いた場合には、フッ素系シランカップリング剤の添加量は、4~6質量%程度が好ましいことが確認された。
123a、b 導電性板、13 放熱板、14 アルミワイヤ、15 外部端子
16 ケース、17 はんだ接合層、18 リードフレーム
19 プライマー層、20 第1封止層、
21、21a、21b、21c、21d 第2封止層
211c、211d 下地層、212c、212d 無機粒子
213c、213d フッ素系シランカップリング剤
Claims (8)
- 積層基板上に実装された半導体素子と導電性接続部材とを含む被封止部材を封止材にて封止してなる半導体装置であって、
前記封止材が、
熱硬化性樹脂主剤を含む第1封止層と、
フッ素系シランカップリング剤を含む第2封止層と
を備え、前記第1封止層が前記被封止部材に積層され、前記第2封止層が前記第1封止層の少なくとも一部を被覆し、
(a)前記第2封止層が、下地層と、フッ素系シランカップリング剤により表面が被覆された無機粒子とを含み、当該下地層が、フッ素系シランカップリング剤層であるか、またはフッ素系シランカップリング剤を含む熱硬化性樹脂層である、または、
(b)前記第2封止層が、下地層と、無機粒子層と、フッ素系シランカップリング剤層とが順に積層されてなり、当該下地層が、シランカップリング剤層であるか、またはシランカップリング剤を含む熱硬化性樹脂層である、半導体装置。 - 積層基板上に実装された半導体素子と導電性接続部材とを含む被封止部材を封止材にて封止してなる半導体装置であって、
前記封止材が、
熱硬化性樹脂主剤を含む第1封止層であって、当該熱硬化性樹脂主剤が、脂肪族エポキシ樹脂と脂環式エポキシ樹脂を含む、第1封止層と、
フッ素系シランカップリング剤を含む第2封止層と
を備え、前記第1封止層が前記被封止部材に積層され、前記第2封止層が前記第1封止層の少なくとも一部を被覆する、半導体装置。 - 前記第2封止層が、フッ素系シランカップリング剤からなる、請求項2に記載の半導体装置。
- 前記第2封止層が、フッ素系シランカップリング剤を含む熱硬化性樹脂層である、請求項2に記載の半導体装置。
- 前記フッ素系シランカップリング剤が、CnF(2n+1)(CH2)mSi(OR1)3(式中、nは1~10から選択される整数であり、mは1~5から選択される整数であって、R1はそれぞれ独立して、炭素数1~3の直鎖状アルキル基である)で表される化合物から選択される1以上のフルオロアルキルシランを含む、請求項1~4のいずれか1項に記載の半導体装置。
- 前記導電性接続部材が、リードフレーム、アルミワイヤ、ピンから選択される、請求項1~5のいずれか1項に記載の半導体装置。
- 前記半導体素子及び前記導電性接続部材を含む被封止部材と、前記封止材との界面に、プライマー層をさらに備え、前記第1封止層が前記プライマー層に接して設けられる、請求項1~6のいずれか1項に記載の半導体装置。
- 前記プライマー層が、ポリイミド樹脂、ポリアミド樹脂またはポリアミドイミド樹脂から選択される、請求項7に記載の半導体装置。
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Citations (4)
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JP2008141052A (ja) | 2006-12-04 | 2008-06-19 | Denso Corp | 電子パッケージ |
JP2012116990A (ja) | 2010-12-02 | 2012-06-21 | Seiko Instruments Inc | 封止材用組成物、封止材用組成物を用いた発光デバイスおよび太陽電池モジュール |
JP2018019067A (ja) | 2016-07-14 | 2018-02-01 | 住友ベークライト株式会社 | 半導体装置、半導体装置の製造方法、半導体封止用エポキシ樹脂組成物および樹脂セット |
JP2018172490A (ja) | 2017-03-31 | 2018-11-08 | 住友化学株式会社 | 組成物 |
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JP2008141052A (ja) | 2006-12-04 | 2008-06-19 | Denso Corp | 電子パッケージ |
JP2012116990A (ja) | 2010-12-02 | 2012-06-21 | Seiko Instruments Inc | 封止材用組成物、封止材用組成物を用いた発光デバイスおよび太陽電池モジュール |
JP2018019067A (ja) | 2016-07-14 | 2018-02-01 | 住友ベークライト株式会社 | 半導体装置、半導体装置の製造方法、半導体封止用エポキシ樹脂組成物および樹脂セット |
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