IN2014DN05630A - - Google Patents

Info

Publication number
IN2014DN05630A
IN2014DN05630A IN5630DEN2014A IN2014DN05630A IN 2014DN05630 A IN2014DN05630 A IN 2014DN05630A IN 5630DEN2014 A IN5630DEN2014 A IN 5630DEN2014A IN 2014DN05630 A IN2014DN05630 A IN 2014DN05630A
Authority
IN
India
Prior art keywords
anode
cathode
gate
electric potential
receptive
Prior art date
Application number
Other languages
English (en)
Inventor
Roderick A Hyde
Jordin T Kare
Nathan P Myhrvold
Tony S Pan
Jr Lowell L Wood
Original Assignee
Elwha Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/374,545 external-priority patent/US8575842B2/en
Priority claimed from US13/545,504 external-priority patent/US9018861B2/en
Priority claimed from US13/587,762 external-priority patent/US8692226B2/en
Priority claimed from US13/612,129 external-priority patent/US9646798B2/en
Priority claimed from US13/666,759 external-priority patent/US8946992B2/en
Application filed by Elwha Llc filed Critical Elwha Llc
Publication of IN2014DN05630A publication Critical patent/IN2014DN05630A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/46Control electrodes, e.g. grid; Auxiliary electrodes
    • H01J1/48Control electrodes, e.g. grid; Auxiliary electrodes characterised by the material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J45/00Discharge tubes functioning as thermionic generators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J19/00Details of vacuum tubes of the types covered by group H01J21/00
    • H01J19/28Non-electron-emitting electrodes; Screens
    • H01J19/38Control electrodes, e.g. grid
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J21/00Vacuum tubes
    • H01J21/02Tubes with a single discharge path
    • H01J21/06Tubes with a single discharge path having electrostatic control means only
    • H01J21/10Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode
    • H01J21/105Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode with microengineered cathode and control electrodes, e.g. Spindt-type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02Electron guns
    • H01J3/021Electron guns using a field emission, photo emission, or secondary emission electron source
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02Electron guns
    • H01J3/021Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Cold Cathode And The Manufacture (AREA)
  • Hybrid Cells (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Electron Beam Exposure (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Ignition Installations For Internal Combustion Engines (AREA)
  • Thin Film Transistor (AREA)
IN5630DEN2014 2011-12-29 2012-12-27 IN2014DN05630A (fr)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US201161631270P 2011-12-29 2011-12-29
US13/374,545 US8575842B2 (en) 2011-12-29 2011-12-30 Field emission device
US201261638986P 2012-04-26 2012-04-26
US13/545,504 US9018861B2 (en) 2011-12-29 2012-07-10 Performance optimization of a field emission device
US13/587,762 US8692226B2 (en) 2011-12-29 2012-08-16 Materials and configurations of a field emission device
US13/612,129 US9646798B2 (en) 2011-12-29 2012-09-12 Electronic device graphene grid
US13/666,759 US8946992B2 (en) 2011-12-29 2012-11-01 Anode with suppressor grid
PCT/US2012/071837 WO2013101941A1 (fr) 2011-12-29 2012-12-27 Dispositif à émission de champ

Publications (1)

Publication Number Publication Date
IN2014DN05630A true IN2014DN05630A (fr) 2015-04-03

Family

ID=48698613

Family Applications (1)

Application Number Title Priority Date Filing Date
IN5630DEN2014 IN2014DN05630A (fr) 2011-12-29 2012-12-27

Country Status (6)

Country Link
EP (3) EP2798673B1 (fr)
JP (1) JP6278897B2 (fr)
KR (3) KR20140128975A (fr)
CN (5) CN104769698B (fr)
IN (1) IN2014DN05630A (fr)
WO (5) WO2013101944A2 (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9349562B2 (en) 2011-12-29 2016-05-24 Elwha Llc Field emission device with AC output
US9646798B2 (en) 2011-12-29 2017-05-09 Elwha Llc Electronic device graphene grid
US9659734B2 (en) 2012-09-12 2017-05-23 Elwha Llc Electronic device multi-layer graphene grid
US9659735B2 (en) 2012-09-12 2017-05-23 Elwha Llc Applications of graphene grids in vacuum electronics
CN103943441B (zh) * 2014-05-10 2016-05-04 福州大学 一种场致发射激发气体放电显示装置及其驱动方法
KR102188080B1 (ko) * 2014-05-13 2020-12-07 삼성전자주식회사 그래핀을 이용한 전자방출소자 및 그 제조방법
WO2015175765A1 (fr) * 2014-05-15 2015-11-19 Elwha Llc Applications de grilles de graphène dans des dispositifs électroniques sous vide
US9666401B2 (en) 2014-11-21 2017-05-30 Electronics And Telecommunications Research Institute Field-emission device with improved beams-convergence
KR101655033B1 (ko) * 2015-06-03 2016-09-06 신라대학교 산학협력단 그래핀을 이용한 진공도 측정 센서 및 진공게이지
US10109781B1 (en) * 2017-04-10 2018-10-23 Face International Corporation Methods for fabrication, manufacture and production of an autonomous electrical power source
US11605770B2 (en) * 2017-04-10 2023-03-14 Face International Corporation Autonomous electrical power sources
CN105931931A (zh) * 2016-05-12 2016-09-07 东南大学 一种尖锥阵列场致发射三极结构及其制作方法
CN108231560B (zh) * 2016-12-09 2022-02-15 全球能源互联网研究院 一种控制电极制备方法及mosfet功率器件
CN111725326A (zh) * 2019-03-18 2020-09-29 中国科学院物理研究所 一种基于二维材料的非易失存储器及其操作方法
CN112399868A (zh) * 2019-06-20 2021-02-23 上海联影医疗科技股份有限公司 放射治疗的系统和方法
CN112242276B (zh) * 2019-07-16 2022-03-22 清华大学 场发射中和器
CN112242279B (zh) * 2019-07-16 2022-03-18 清华大学 碳纳米管场发射体及其制备方法
CN112242277B (zh) * 2019-07-16 2022-03-18 清华大学 场发射中和器
KR102346048B1 (ko) * 2019-10-11 2022-01-03 성균관대학교산학협력단 2 차원 구조체 및 이의 제조 방법

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1045273A (fr) * 1951-11-19 1953-11-25 Radiologie Cie Gle Dispositif de production de rayonnement x, autorégulateur
US3254244A (en) * 1961-06-27 1966-05-31 Westinghouse Electric Corp Thermionic power conversion triode
US4427886A (en) * 1982-08-02 1984-01-24 Wisconsin Alumni Research Foundation Low voltage field emission electron gun
GB2318208B (en) * 1990-07-13 1998-09-02 Marconi Gec Ltd Electronic switching devices
JP3235172B2 (ja) * 1991-05-13 2001-12-04 セイコーエプソン株式会社 電界電子放出装置
US5272411A (en) * 1992-01-28 1993-12-21 Itt Corporation Coaxial triode apparatus
KR970005769B1 (ko) * 1992-08-27 1997-04-19 가부시끼가이샤 도시바 자계 계침형 전자총
JPH06104289A (ja) * 1992-09-18 1994-04-15 Hitachi Ltd 半導体装置およびそれを用いた増幅回路
US5578901A (en) * 1994-02-14 1996-11-26 E. I. Du Pont De Nemours And Company Diamond fiber field emitters
DE69513581T2 (de) * 1994-08-01 2000-09-07 Motorola Inc Bogen-Unterdrückungsvorrichtung für eine Feldemissionsvorrichtung
KR100266517B1 (ko) * 1995-07-07 2000-09-15 가네꼬 히사시 전계 방출 냉 캐소드 및 개선된 게이트 구조를 갖는 전자 총
JP3556331B2 (ja) * 1995-07-17 2004-08-18 株式会社日立製作所 電子源の作製法
US5982095A (en) * 1995-09-19 1999-11-09 Lucent Technologies Inc. Plasma displays having electrodes of low-electron affinity materials
US5834781A (en) * 1996-02-14 1998-11-10 Hitachi, Ltd. Electron source and electron beam-emitting apparatus equipped with same
JP3598173B2 (ja) * 1996-04-24 2004-12-08 浜松ホトニクス株式会社 電子増倍器及び光電子増倍管
US5780954A (en) * 1997-01-22 1998-07-14 Davis; Edwin D. Thermionic electric converters
JP3428931B2 (ja) * 1998-09-09 2003-07-22 キヤノン株式会社 フラットパネルディスプレイの解体処理方法
US6060840A (en) * 1999-02-19 2000-05-09 Motorola, Inc. Method and control circuit for controlling an emission current in a field emission display
US6205790B1 (en) * 1999-05-28 2001-03-27 Lucent Technologies Inc. Efficient thermoelectric controller
CA2312140A1 (fr) * 1999-06-25 2000-12-25 Matthias Ramm Structure d'heterojonction de type a separation de charge et methode de fabrication
US6538367B1 (en) * 1999-07-15 2003-03-25 Agere Systems Inc. Field emitting device comprising field-concentrating nanoconductor assembly and method for making the same
KR20010082591A (ko) * 1999-12-21 2001-08-30 이데이 노부유끼 전자 방출 장치, 냉음극 전계 전자 방출 소자 및 그 제조방법, 및 냉음극 전계 전자 방출 표시 장치 및 그 제조 방법
DE19963571A1 (de) * 1999-12-29 2001-07-12 Pfannenberg Otto Gmbh Kühlvorrichtung
AU2001237064B2 (en) * 2000-02-16 2005-11-17 Fullerene International Corporation Diamond/carbon nanotube structures for efficient electron field emission
US6590320B1 (en) * 2000-02-23 2003-07-08 Copytale, Inc. Thin-film planar edge-emitter field emission flat panel display
US7014889B2 (en) * 2000-05-23 2006-03-21 University Of Virginia Patent Foundation Process and apparatus for plasma activated depositions in a vacuum
US6404089B1 (en) * 2000-07-21 2002-06-11 Mark R. Tomion Electrodynamic field generator
TWM309746U (en) * 2000-10-19 2007-04-11 Matsushita Electric Ind Co Ltd Driving apparatus for a field emission device, field emission device, electron source, light source, image display apparatus, electron gun, electron beam apparatus, cathode ray tube, and discharge tube
EP1274111B1 (fr) * 2001-07-06 2005-09-07 ICT, Integrated Circuit Testing GmbH Dispositif d'émission d'électrons
US6946596B2 (en) * 2002-09-13 2005-09-20 Kucherov Yan R Tunneling-effect energy converters
GB0309383D0 (en) * 2003-04-25 2003-06-04 Cxr Ltd X-ray tube electron sources
US7079370B2 (en) * 2003-04-28 2006-07-18 Air Products And Chemicals, Inc. Apparatus and method for removal of surface oxides via fluxless technique electron attachment and remote ion generation
US20050016575A1 (en) * 2003-06-13 2005-01-27 Nalin Kumar Field emission based thermoelectric device
US6906432B2 (en) * 2003-07-02 2005-06-14 Mes International, Inc. Electrical power generation system and method
KR100523840B1 (ko) * 2003-08-27 2005-10-27 한국전자통신연구원 전계 방출 소자
JP2005116736A (ja) * 2003-10-07 2005-04-28 Matsushita Electric Ind Co Ltd 熱電変換素子およびその製造方法、並びにそれを用いた冷却装置
US7547907B2 (en) * 2004-12-29 2009-06-16 Intel Corporation Non-blocking switch having carbon nanostructures and Mach-Zehnder interferometer
US7608974B2 (en) * 2005-06-20 2009-10-27 Chien-Min Sung Diamond-like carbon devices and methods for the use and manufacture thereof
EP1760761B1 (fr) * 2005-09-05 2017-10-18 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Emetteur de faisceau à particules chargées et procédé de fonctionnement d'un émetteur de faisceau à particules chargées
US20080017237A1 (en) * 2006-07-19 2008-01-24 James William Bray Heat transfer and power generation device
WO2008038684A1 (fr) * 2006-09-27 2008-04-03 Denki Kagaku Kogyo Kabushiki Kaisha Source d'électrons
US7898042B2 (en) * 2006-11-07 2011-03-01 Cbrite Inc. Two-terminal switching devices and their methods of fabrication
US7741764B1 (en) * 2007-01-09 2010-06-22 Chien-Min Sung DLC emitter devices and associated methods
WO2008120341A1 (fr) * 2007-03-29 2008-10-09 Advantest Corporation Canon à électrons et système d'exposition à un faisceau électronique
TWI461350B (zh) * 2007-05-22 2014-11-21 Nantero Inc 使用奈米結構物之三極管及其製造方法
FI20075767A0 (fi) * 2007-10-30 2007-10-30 Canatu Oy Pinnoite ja sähkölaitteita jotka käsittävät tätä
US8018053B2 (en) * 2008-01-31 2011-09-13 Northrop Grumman Systems Corporation Heat transfer device
JP2009187684A (ja) * 2008-02-02 2009-08-20 Stanley Electric Co Ltd 電界放射型電子源の電子流制御方法
US8471444B2 (en) * 2008-09-15 2013-06-25 Photonis Netherlands B.V. Ion barrier membrane for use in a vacuum tube using electron multiplying, an electron multiplying structure for use in a vacuum tube using electron multiplying as well as a vacuum tube using electron multiplying provided with such an electron multiplying structure
US8247769B2 (en) * 2008-10-09 2012-08-21 California Institute Of Technology Characterization of nanoscale structures using an ultrafast electron microscope
TW201117233A (en) * 2009-08-27 2011-05-16 Landa Lab Ltd Method and device for generating electricity and method of fabrication thereof
EP2488719B8 (fr) * 2009-10-15 2019-06-26 Baker Hughes, a GE company, LLC Compacts poly-cristallins comprenant des inclusions nanoparticulaires, éléments de coupe et outils de forage comprenant de tels compacts et leurs procédés de fabrication
WO2011094204A2 (fr) * 2010-01-26 2011-08-04 Wisconsin Alumni Research Foundation Procédés de fabrication de matériaux semi-conducteurs nanoperforés en graphène d'aire importante
US8354323B2 (en) * 2010-02-02 2013-01-15 Searete Llc Doped graphene electronic materials
CN103843105A (zh) * 2010-02-10 2014-06-04 摩奇有限公司(d/b/aVoxa) 暗视野像差矫正电子显微镜
CN102194633B (zh) * 2010-03-17 2013-08-28 清华大学 透射电镜微栅
CN102339699B (zh) * 2011-09-30 2014-03-12 东南大学 基于石墨烯的场发射三极结构
EP2880676B1 (fr) * 2012-07-30 2020-03-18 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Dispositif et procédé destinés à une conversion d'énergie thermoélectronique

Also Published As

Publication number Publication date
WO2013101941A1 (fr) 2013-07-04
WO2013101944A3 (fr) 2015-06-11
KR20140110981A (ko) 2014-09-17
KR20140128975A (ko) 2014-11-06
CN104137218A (zh) 2014-11-05
CN104769698A (zh) 2015-07-08
EP2801102A1 (fr) 2014-11-12
EP2801102B1 (fr) 2018-05-30
EP2798673B1 (fr) 2019-01-16
EP2801102A4 (fr) 2015-08-12
EP2798673A4 (fr) 2015-11-18
CN104137218B (zh) 2017-03-08
JP2015510655A (ja) 2015-04-09
CN104160467B (zh) 2017-03-08
WO2013101944A2 (fr) 2013-07-04
KR101988068B1 (ko) 2019-06-11
WO2013101948A1 (fr) 2013-07-04
CN104137254A (zh) 2014-11-05
CN104137254B (zh) 2017-06-06
WO2013101937A1 (fr) 2013-07-04
JP6278897B2 (ja) 2018-02-14
CN104769698B (zh) 2017-03-08
CN104160467A (zh) 2014-11-19
WO2013101951A1 (fr) 2013-07-04
EP2797837A1 (fr) 2014-11-05
EP2797837A4 (fr) 2015-08-26
KR101988069B1 (ko) 2019-06-11
KR20140116181A (ko) 2014-10-01
CN104024147A (zh) 2014-09-03
EP2798673A1 (fr) 2014-11-05

Similar Documents

Publication Publication Date Title
IN2014DN05630A (fr)
AR095602A1 (es) Sistema y método de recubrimiento de un sustrato
WO2008100269A3 (fr) Source de neutrons compacte et modérateur
GB2538676A (en) Right angle time-of-flight detector with an extended life time
WO2014144705A3 (fr) Pile à combustible microbienne et procédés d'utilisation
AR092512A1 (es) Sistema y metodo de recubrimiento de un sustrato
WO2015134430A8 (fr) Compositions de dopage contenant du bore, systèmes et procédés d'utilisation de celles-ci pour améliorer le courant et les performances du faisceau d'ions pendant une implantation d'ions de bore
GB201304870D0 (en) X-ray source, high-voltage generator, electron beam gun, rotary target assembly, rotary target and rotary vacuum seal
MX2011006865A (es) Ensamblado ionizador de electrodos de aire.
MX2016005746A (es) Generador de neutrones de fuente de iones de nano emisores.
MX362273B (es) Generador de neutrones de fuente de iones de emision de campo.
TW201130007A (en) High efficiency low energy microwave ion/electron source
WO2013144679A3 (fr) Dispositif et procédé d'ionisation corona
MX368879B (es) Dispositivo de bombardeo de iones y metodo para usar el mismo para limpiar una superficie de sustrato.
WO2010094588A3 (fr) Source de rayons x comportant une cathode à émission de champ
MY174916A (en) Plasma source
MX2012001712A (es) Aparato y metodo para remocion de oxidos de superficie por la via de la tecnica sin fundente que involucra la union de electron.
WO2014132049A3 (fr) Appareil de génération de rayons x à faible énergie
WO2012036491A3 (fr) Dispositif de traitement par plasma utilisant un transformateur à courant de fuite
PL2301042T3 (pl) Tarcza rentgenowska i sposób wytwarzania promieni rentgena
WO2012025924A3 (fr) Lampe éconénergétique
He et al. Ultrafast probing of transient electric fields from optical field ionized plasmas using picosecond electron deflectometry
Teresov et al. Investigation of characteristics of sub-millisecond electron source with the plasma cathode and the opened boundary of anode plasma
PH12013000080A1 (en) Fluorescent light emitting apparatus and method of forming fluorescent layer thereof
Schumaker Short-pulse, high-energy radiation generation from laser-wakefield accelerated electron beams