IN2014DN05630A - - Google Patents
Info
- Publication number
- IN2014DN05630A IN2014DN05630A IN5630DEN2014A IN2014DN05630A IN 2014DN05630 A IN2014DN05630 A IN 2014DN05630A IN 5630DEN2014 A IN5630DEN2014 A IN 5630DEN2014A IN 2014DN05630 A IN2014DN05630 A IN 2014DN05630A
- Authority
- IN
- India
- Prior art keywords
- anode
- cathode
- gate
- electric potential
- receptive
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/46—Control electrodes, e.g. grid; Auxiliary electrodes
- H01J1/48—Control electrodes, e.g. grid; Auxiliary electrodes characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J45/00—Discharge tubes functioning as thermionic generators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J19/00—Details of vacuum tubes of the types covered by group H01J21/00
- H01J19/28—Non-electron-emitting electrodes; Screens
- H01J19/38—Control electrodes, e.g. grid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J21/00—Vacuum tubes
- H01J21/02—Tubes with a single discharge path
- H01J21/06—Tubes with a single discharge path having electrostatic control means only
- H01J21/10—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode
- H01J21/105—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode with microengineered cathode and control electrodes, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
- H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Cold Cathode And The Manufacture (AREA)
- Hybrid Cells (AREA)
- Carbon And Carbon Compounds (AREA)
- Electron Beam Exposure (AREA)
- Plasma Technology (AREA)
- Electron Sources, Ion Sources (AREA)
- Ignition Installations For Internal Combustion Engines (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161631270P | 2011-12-29 | 2011-12-29 | |
US13/374,545 US8575842B2 (en) | 2011-12-29 | 2011-12-30 | Field emission device |
US201261638986P | 2012-04-26 | 2012-04-26 | |
US13/545,504 US9018861B2 (en) | 2011-12-29 | 2012-07-10 | Performance optimization of a field emission device |
US13/587,762 US8692226B2 (en) | 2011-12-29 | 2012-08-16 | Materials and configurations of a field emission device |
US13/612,129 US9646798B2 (en) | 2011-12-29 | 2012-09-12 | Electronic device graphene grid |
US13/666,759 US8946992B2 (en) | 2011-12-29 | 2012-11-01 | Anode with suppressor grid |
PCT/US2012/071837 WO2013101941A1 (fr) | 2011-12-29 | 2012-12-27 | Dispositif à émission de champ |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2014DN05630A true IN2014DN05630A (fr) | 2015-04-03 |
Family
ID=48698613
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN5630DEN2014 IN2014DN05630A (fr) | 2011-12-29 | 2012-12-27 |
Country Status (6)
Country | Link |
---|---|
EP (3) | EP2798673B1 (fr) |
JP (1) | JP6278897B2 (fr) |
KR (3) | KR20140128975A (fr) |
CN (5) | CN104769698B (fr) |
IN (1) | IN2014DN05630A (fr) |
WO (5) | WO2013101944A2 (fr) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9349562B2 (en) | 2011-12-29 | 2016-05-24 | Elwha Llc | Field emission device with AC output |
US9646798B2 (en) | 2011-12-29 | 2017-05-09 | Elwha Llc | Electronic device graphene grid |
US9659734B2 (en) | 2012-09-12 | 2017-05-23 | Elwha Llc | Electronic device multi-layer graphene grid |
US9659735B2 (en) | 2012-09-12 | 2017-05-23 | Elwha Llc | Applications of graphene grids in vacuum electronics |
CN103943441B (zh) * | 2014-05-10 | 2016-05-04 | 福州大学 | 一种场致发射激发气体放电显示装置及其驱动方法 |
KR102188080B1 (ko) * | 2014-05-13 | 2020-12-07 | 삼성전자주식회사 | 그래핀을 이용한 전자방출소자 및 그 제조방법 |
WO2015175765A1 (fr) * | 2014-05-15 | 2015-11-19 | Elwha Llc | Applications de grilles de graphène dans des dispositifs électroniques sous vide |
US9666401B2 (en) | 2014-11-21 | 2017-05-30 | Electronics And Telecommunications Research Institute | Field-emission device with improved beams-convergence |
KR101655033B1 (ko) * | 2015-06-03 | 2016-09-06 | 신라대학교 산학협력단 | 그래핀을 이용한 진공도 측정 센서 및 진공게이지 |
US10109781B1 (en) * | 2017-04-10 | 2018-10-23 | Face International Corporation | Methods for fabrication, manufacture and production of an autonomous electrical power source |
US11605770B2 (en) * | 2017-04-10 | 2023-03-14 | Face International Corporation | Autonomous electrical power sources |
CN105931931A (zh) * | 2016-05-12 | 2016-09-07 | 东南大学 | 一种尖锥阵列场致发射三极结构及其制作方法 |
CN108231560B (zh) * | 2016-12-09 | 2022-02-15 | 全球能源互联网研究院 | 一种控制电极制备方法及mosfet功率器件 |
CN111725326A (zh) * | 2019-03-18 | 2020-09-29 | 中国科学院物理研究所 | 一种基于二维材料的非易失存储器及其操作方法 |
CN112399868A (zh) * | 2019-06-20 | 2021-02-23 | 上海联影医疗科技股份有限公司 | 放射治疗的系统和方法 |
CN112242276B (zh) * | 2019-07-16 | 2022-03-22 | 清华大学 | 场发射中和器 |
CN112242279B (zh) * | 2019-07-16 | 2022-03-18 | 清华大学 | 碳纳米管场发射体及其制备方法 |
CN112242277B (zh) * | 2019-07-16 | 2022-03-18 | 清华大学 | 场发射中和器 |
KR102346048B1 (ko) * | 2019-10-11 | 2022-01-03 | 성균관대학교산학협력단 | 2 차원 구조체 및 이의 제조 방법 |
Family Cites Families (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1045273A (fr) * | 1951-11-19 | 1953-11-25 | Radiologie Cie Gle | Dispositif de production de rayonnement x, autorégulateur |
US3254244A (en) * | 1961-06-27 | 1966-05-31 | Westinghouse Electric Corp | Thermionic power conversion triode |
US4427886A (en) * | 1982-08-02 | 1984-01-24 | Wisconsin Alumni Research Foundation | Low voltage field emission electron gun |
GB2318208B (en) * | 1990-07-13 | 1998-09-02 | Marconi Gec Ltd | Electronic switching devices |
JP3235172B2 (ja) * | 1991-05-13 | 2001-12-04 | セイコーエプソン株式会社 | 電界電子放出装置 |
US5272411A (en) * | 1992-01-28 | 1993-12-21 | Itt Corporation | Coaxial triode apparatus |
KR970005769B1 (ko) * | 1992-08-27 | 1997-04-19 | 가부시끼가이샤 도시바 | 자계 계침형 전자총 |
JPH06104289A (ja) * | 1992-09-18 | 1994-04-15 | Hitachi Ltd | 半導体装置およびそれを用いた増幅回路 |
US5578901A (en) * | 1994-02-14 | 1996-11-26 | E. I. Du Pont De Nemours And Company | Diamond fiber field emitters |
DE69513581T2 (de) * | 1994-08-01 | 2000-09-07 | Motorola Inc | Bogen-Unterdrückungsvorrichtung für eine Feldemissionsvorrichtung |
KR100266517B1 (ko) * | 1995-07-07 | 2000-09-15 | 가네꼬 히사시 | 전계 방출 냉 캐소드 및 개선된 게이트 구조를 갖는 전자 총 |
JP3556331B2 (ja) * | 1995-07-17 | 2004-08-18 | 株式会社日立製作所 | 電子源の作製法 |
US5982095A (en) * | 1995-09-19 | 1999-11-09 | Lucent Technologies Inc. | Plasma displays having electrodes of low-electron affinity materials |
US5834781A (en) * | 1996-02-14 | 1998-11-10 | Hitachi, Ltd. | Electron source and electron beam-emitting apparatus equipped with same |
JP3598173B2 (ja) * | 1996-04-24 | 2004-12-08 | 浜松ホトニクス株式会社 | 電子増倍器及び光電子増倍管 |
US5780954A (en) * | 1997-01-22 | 1998-07-14 | Davis; Edwin D. | Thermionic electric converters |
JP3428931B2 (ja) * | 1998-09-09 | 2003-07-22 | キヤノン株式会社 | フラットパネルディスプレイの解体処理方法 |
US6060840A (en) * | 1999-02-19 | 2000-05-09 | Motorola, Inc. | Method and control circuit for controlling an emission current in a field emission display |
US6205790B1 (en) * | 1999-05-28 | 2001-03-27 | Lucent Technologies Inc. | Efficient thermoelectric controller |
CA2312140A1 (fr) * | 1999-06-25 | 2000-12-25 | Matthias Ramm | Structure d'heterojonction de type a separation de charge et methode de fabrication |
US6538367B1 (en) * | 1999-07-15 | 2003-03-25 | Agere Systems Inc. | Field emitting device comprising field-concentrating nanoconductor assembly and method for making the same |
KR20010082591A (ko) * | 1999-12-21 | 2001-08-30 | 이데이 노부유끼 | 전자 방출 장치, 냉음극 전계 전자 방출 소자 및 그 제조방법, 및 냉음극 전계 전자 방출 표시 장치 및 그 제조 방법 |
DE19963571A1 (de) * | 1999-12-29 | 2001-07-12 | Pfannenberg Otto Gmbh | Kühlvorrichtung |
AU2001237064B2 (en) * | 2000-02-16 | 2005-11-17 | Fullerene International Corporation | Diamond/carbon nanotube structures for efficient electron field emission |
US6590320B1 (en) * | 2000-02-23 | 2003-07-08 | Copytale, Inc. | Thin-film planar edge-emitter field emission flat panel display |
US7014889B2 (en) * | 2000-05-23 | 2006-03-21 | University Of Virginia Patent Foundation | Process and apparatus for plasma activated depositions in a vacuum |
US6404089B1 (en) * | 2000-07-21 | 2002-06-11 | Mark R. Tomion | Electrodynamic field generator |
TWM309746U (en) * | 2000-10-19 | 2007-04-11 | Matsushita Electric Ind Co Ltd | Driving apparatus for a field emission device, field emission device, electron source, light source, image display apparatus, electron gun, electron beam apparatus, cathode ray tube, and discharge tube |
EP1274111B1 (fr) * | 2001-07-06 | 2005-09-07 | ICT, Integrated Circuit Testing GmbH | Dispositif d'émission d'électrons |
US6946596B2 (en) * | 2002-09-13 | 2005-09-20 | Kucherov Yan R | Tunneling-effect energy converters |
GB0309383D0 (en) * | 2003-04-25 | 2003-06-04 | Cxr Ltd | X-ray tube electron sources |
US7079370B2 (en) * | 2003-04-28 | 2006-07-18 | Air Products And Chemicals, Inc. | Apparatus and method for removal of surface oxides via fluxless technique electron attachment and remote ion generation |
US20050016575A1 (en) * | 2003-06-13 | 2005-01-27 | Nalin Kumar | Field emission based thermoelectric device |
US6906432B2 (en) * | 2003-07-02 | 2005-06-14 | Mes International, Inc. | Electrical power generation system and method |
KR100523840B1 (ko) * | 2003-08-27 | 2005-10-27 | 한국전자통신연구원 | 전계 방출 소자 |
JP2005116736A (ja) * | 2003-10-07 | 2005-04-28 | Matsushita Electric Ind Co Ltd | 熱電変換素子およびその製造方法、並びにそれを用いた冷却装置 |
US7547907B2 (en) * | 2004-12-29 | 2009-06-16 | Intel Corporation | Non-blocking switch having carbon nanostructures and Mach-Zehnder interferometer |
US7608974B2 (en) * | 2005-06-20 | 2009-10-27 | Chien-Min Sung | Diamond-like carbon devices and methods for the use and manufacture thereof |
EP1760761B1 (fr) * | 2005-09-05 | 2017-10-18 | ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Emetteur de faisceau à particules chargées et procédé de fonctionnement d'un émetteur de faisceau à particules chargées |
US20080017237A1 (en) * | 2006-07-19 | 2008-01-24 | James William Bray | Heat transfer and power generation device |
WO2008038684A1 (fr) * | 2006-09-27 | 2008-04-03 | Denki Kagaku Kogyo Kabushiki Kaisha | Source d'électrons |
US7898042B2 (en) * | 2006-11-07 | 2011-03-01 | Cbrite Inc. | Two-terminal switching devices and their methods of fabrication |
US7741764B1 (en) * | 2007-01-09 | 2010-06-22 | Chien-Min Sung | DLC emitter devices and associated methods |
WO2008120341A1 (fr) * | 2007-03-29 | 2008-10-09 | Advantest Corporation | Canon à électrons et système d'exposition à un faisceau électronique |
TWI461350B (zh) * | 2007-05-22 | 2014-11-21 | Nantero Inc | 使用奈米結構物之三極管及其製造方法 |
FI20075767A0 (fi) * | 2007-10-30 | 2007-10-30 | Canatu Oy | Pinnoite ja sähkölaitteita jotka käsittävät tätä |
US8018053B2 (en) * | 2008-01-31 | 2011-09-13 | Northrop Grumman Systems Corporation | Heat transfer device |
JP2009187684A (ja) * | 2008-02-02 | 2009-08-20 | Stanley Electric Co Ltd | 電界放射型電子源の電子流制御方法 |
US8471444B2 (en) * | 2008-09-15 | 2013-06-25 | Photonis Netherlands B.V. | Ion barrier membrane for use in a vacuum tube using electron multiplying, an electron multiplying structure for use in a vacuum tube using electron multiplying as well as a vacuum tube using electron multiplying provided with such an electron multiplying structure |
US8247769B2 (en) * | 2008-10-09 | 2012-08-21 | California Institute Of Technology | Characterization of nanoscale structures using an ultrafast electron microscope |
TW201117233A (en) * | 2009-08-27 | 2011-05-16 | Landa Lab Ltd | Method and device for generating electricity and method of fabrication thereof |
EP2488719B8 (fr) * | 2009-10-15 | 2019-06-26 | Baker Hughes, a GE company, LLC | Compacts poly-cristallins comprenant des inclusions nanoparticulaires, éléments de coupe et outils de forage comprenant de tels compacts et leurs procédés de fabrication |
WO2011094204A2 (fr) * | 2010-01-26 | 2011-08-04 | Wisconsin Alumni Research Foundation | Procédés de fabrication de matériaux semi-conducteurs nanoperforés en graphène d'aire importante |
US8354323B2 (en) * | 2010-02-02 | 2013-01-15 | Searete Llc | Doped graphene electronic materials |
CN103843105A (zh) * | 2010-02-10 | 2014-06-04 | 摩奇有限公司(d/b/aVoxa) | 暗视野像差矫正电子显微镜 |
CN102194633B (zh) * | 2010-03-17 | 2013-08-28 | 清华大学 | 透射电镜微栅 |
CN102339699B (zh) * | 2011-09-30 | 2014-03-12 | 东南大学 | 基于石墨烯的场发射三极结构 |
EP2880676B1 (fr) * | 2012-07-30 | 2020-03-18 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Dispositif et procédé destinés à une conversion d'énergie thermoélectronique |
-
2012
- 2012-12-27 WO PCT/US2012/071841 patent/WO2013101944A2/fr active Application Filing
- 2012-12-27 CN CN201280070914.4A patent/CN104769698B/zh not_active Expired - Fee Related
- 2012-12-27 KR KR1020147021314A patent/KR20140128975A/ko not_active Application Discontinuation
- 2012-12-27 WO PCT/US2012/071845 patent/WO2013101948A1/fr active Application Filing
- 2012-12-27 WO PCT/US2012/071833 patent/WO2013101937A1/fr active Application Filing
- 2012-12-27 IN IN5630DEN2014 patent/IN2014DN05630A/en unknown
- 2012-12-27 CN CN201280070924.8A patent/CN104160467B/zh active Active
- 2012-12-27 EP EP12863100.9A patent/EP2798673B1/fr active Active
- 2012-12-27 EP EP12861564.8A patent/EP2797837A4/fr not_active Withdrawn
- 2012-12-27 WO PCT/US2012/071837 patent/WO2013101941A1/fr active Application Filing
- 2012-12-27 CN CN201280070857.XA patent/CN104137254B/zh active Active
- 2012-12-27 CN CN201280070838.7A patent/CN104137218B/zh active Active
- 2012-12-27 KR KR1020147021047A patent/KR101988068B1/ko active IP Right Grant
- 2012-12-27 EP EP12863524.0A patent/EP2801102B1/fr active Active
- 2012-12-27 WO PCT/US2012/071849 patent/WO2013101951A1/fr active Application Filing
- 2012-12-27 JP JP2014550467A patent/JP6278897B2/ja active Active
- 2012-12-27 CN CN201280065581.6A patent/CN104024147A/zh active Pending
- 2012-12-27 KR KR1020147021370A patent/KR101988069B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
WO2013101941A1 (fr) | 2013-07-04 |
WO2013101944A3 (fr) | 2015-06-11 |
KR20140110981A (ko) | 2014-09-17 |
KR20140128975A (ko) | 2014-11-06 |
CN104137218A (zh) | 2014-11-05 |
CN104769698A (zh) | 2015-07-08 |
EP2801102A1 (fr) | 2014-11-12 |
EP2801102B1 (fr) | 2018-05-30 |
EP2798673B1 (fr) | 2019-01-16 |
EP2801102A4 (fr) | 2015-08-12 |
EP2798673A4 (fr) | 2015-11-18 |
CN104137218B (zh) | 2017-03-08 |
JP2015510655A (ja) | 2015-04-09 |
CN104160467B (zh) | 2017-03-08 |
WO2013101944A2 (fr) | 2013-07-04 |
KR101988068B1 (ko) | 2019-06-11 |
WO2013101948A1 (fr) | 2013-07-04 |
CN104137254A (zh) | 2014-11-05 |
CN104137254B (zh) | 2017-06-06 |
WO2013101937A1 (fr) | 2013-07-04 |
JP6278897B2 (ja) | 2018-02-14 |
CN104769698B (zh) | 2017-03-08 |
CN104160467A (zh) | 2014-11-19 |
WO2013101951A1 (fr) | 2013-07-04 |
EP2797837A1 (fr) | 2014-11-05 |
EP2797837A4 (fr) | 2015-08-26 |
KR101988069B1 (ko) | 2019-06-11 |
KR20140116181A (ko) | 2014-10-01 |
CN104024147A (zh) | 2014-09-03 |
EP2798673A1 (fr) | 2014-11-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IN2014DN05630A (fr) | ||
AR095602A1 (es) | Sistema y método de recubrimiento de un sustrato | |
WO2008100269A3 (fr) | Source de neutrons compacte et modérateur | |
GB2538676A (en) | Right angle time-of-flight detector with an extended life time | |
WO2014144705A3 (fr) | Pile à combustible microbienne et procédés d'utilisation | |
AR092512A1 (es) | Sistema y metodo de recubrimiento de un sustrato | |
WO2015134430A8 (fr) | Compositions de dopage contenant du bore, systèmes et procédés d'utilisation de celles-ci pour améliorer le courant et les performances du faisceau d'ions pendant une implantation d'ions de bore | |
GB201304870D0 (en) | X-ray source, high-voltage generator, electron beam gun, rotary target assembly, rotary target and rotary vacuum seal | |
MX2011006865A (es) | Ensamblado ionizador de electrodos de aire. | |
MX2016005746A (es) | Generador de neutrones de fuente de iones de nano emisores. | |
MX362273B (es) | Generador de neutrones de fuente de iones de emision de campo. | |
TW201130007A (en) | High efficiency low energy microwave ion/electron source | |
WO2013144679A3 (fr) | Dispositif et procédé d'ionisation corona | |
MX368879B (es) | Dispositivo de bombardeo de iones y metodo para usar el mismo para limpiar una superficie de sustrato. | |
WO2010094588A3 (fr) | Source de rayons x comportant une cathode à émission de champ | |
MY174916A (en) | Plasma source | |
MX2012001712A (es) | Aparato y metodo para remocion de oxidos de superficie por la via de la tecnica sin fundente que involucra la union de electron. | |
WO2014132049A3 (fr) | Appareil de génération de rayons x à faible énergie | |
WO2012036491A3 (fr) | Dispositif de traitement par plasma utilisant un transformateur à courant de fuite | |
PL2301042T3 (pl) | Tarcza rentgenowska i sposób wytwarzania promieni rentgena | |
WO2012025924A3 (fr) | Lampe éconénergétique | |
He et al. | Ultrafast probing of transient electric fields from optical field ionized plasmas using picosecond electron deflectometry | |
Teresov et al. | Investigation of characteristics of sub-millisecond electron source with the plasma cathode and the opened boundary of anode plasma | |
PH12013000080A1 (en) | Fluorescent light emitting apparatus and method of forming fluorescent layer thereof | |
Schumaker | Short-pulse, high-energy radiation generation from laser-wakefield accelerated electron beams |