IN2014CN02249A - - Google Patents

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Publication number
IN2014CN02249A
IN2014CN02249A IN2249CHN2014A IN2014CN02249A IN 2014CN02249 A IN2014CN02249 A IN 2014CN02249A IN 2249CHN2014 A IN2249CHN2014 A IN 2249CHN2014A IN 2014CN02249 A IN2014CN02249 A IN 2014CN02249A
Authority
IN
India
Prior art keywords
different
nvr
coupling links
lines
memory
Prior art date
Application number
Other languages
English (en)
Inventor
Jung Pill Kim
Taehyun Kim
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of IN2014CN02249A publication Critical patent/IN2014CN02249A/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0038—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/026—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in sense amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/08—Control thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
IN2249CHN2014 2011-10-21 2012-10-22 IN2014CN02249A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/278,217 US8675390B2 (en) 2011-10-21 2011-10-21 System and method for MRAM having controlled averagable and isolatable voltage reference
PCT/US2012/061359 WO2013059808A1 (en) 2011-10-21 2012-10-22 System and method for mram having controlled averagable and isolatable voltage reference

Publications (1)

Publication Number Publication Date
IN2014CN02249A true IN2014CN02249A (ja) 2015-06-12

Family

ID=47146707

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2249CHN2014 IN2014CN02249A (ja) 2011-10-21 2012-10-22

Country Status (7)

Country Link
US (3) US8675390B2 (ja)
EP (1) EP2769381B1 (ja)
JP (1) JP6054976B2 (ja)
KR (1) KR101639343B1 (ja)
CN (1) CN103890849B (ja)
IN (1) IN2014CN02249A (ja)
WO (1) WO2013059808A1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8675390B2 (en) 2011-10-21 2014-03-18 Qualcomm Incorporated System and method for MRAM having controlled averagable and isolatable voltage reference
RU2584460C2 (ru) 2012-03-29 2016-05-20 Интел Корпорейшн Элемент и схема хранения магнитного состояния
JP2016151183A (ja) * 2015-02-16 2016-08-22 いすゞ自動車株式会社 内燃機関の排気ガス浄化システム、内燃機関及び内燃機関の排気ガス浄化方法
US10032509B2 (en) * 2015-03-30 2018-07-24 Toshiba Memory Corporation Semiconductor memory device including variable resistance element
US9444406B1 (en) * 2015-06-29 2016-09-13 Silicon Laboratories Inc. Amplifier topology achieving high DC gain and wide output voltage range
US9947380B2 (en) * 2016-03-11 2018-04-17 Toshiba Memory Corporation Adjustable read reference voltage to reduce errors in memory devices
CN111163245B (zh) * 2018-11-08 2021-11-23 杭州海康威视数字技术股份有限公司 网络硬盘录像机中添加网络摄像机的方法及装置
CN110060713B (zh) * 2019-04-28 2021-10-22 中国科学院微电子研究所 一种工艺浮动容忍的读取时序生成装置

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JP3661470B2 (ja) 1999-02-15 2005-06-15 フジノン株式会社 組織採取装置
JP2001177065A (ja) * 1999-12-17 2001-06-29 Hitachi Ltd 半導体集積回路装置および内部電圧の切り換え方法
US6317376B1 (en) 2000-06-20 2001-11-13 Hewlett-Packard Company Reference signal generation for magnetic random access memory devices
US6434044B1 (en) * 2001-02-16 2002-08-13 Sandisk Corporation Method and system for generation and distribution of supply voltages in memory systems
JP3821066B2 (ja) 2002-07-04 2006-09-13 日本電気株式会社 磁気ランダムアクセスメモリ
JP4195266B2 (ja) * 2002-09-13 2008-12-10 スパンション エルエルシー 半導体記憶装置
US6801448B2 (en) 2002-11-26 2004-10-05 Sharp Laboratories Of America, Inc. Common bit/common source line high density 1T1R R-RAM array
KR100492781B1 (ko) * 2003-05-23 2005-06-07 주식회사 하이닉스반도체 멀티비트 제어 기능을 갖는 불휘발성 강유전체 메모리 장치
US7016249B2 (en) * 2003-06-30 2006-03-21 Intel Corporation Reference voltage generator
JP2005050421A (ja) * 2003-07-28 2005-02-24 Sharp Corp 半導体記憶装置
JP4192060B2 (ja) * 2003-09-12 2008-12-03 シャープ株式会社 不揮発性半導体記憶装置
JP4200872B2 (ja) * 2003-10-15 2008-12-24 沖電気工業株式会社 半導体集積回路
US7075817B2 (en) * 2004-07-20 2006-07-11 Unity Semiconductor Corporation Two terminal memory array having reference cells
KR100604913B1 (ko) 2004-10-28 2006-07-28 삼성전자주식회사 멀티 비트 셀 어레이 구조를 가지는 마그네틱 램
WO2006085459A1 (ja) 2005-02-08 2006-08-17 Nec Corporation 半導体記憶装置及び半導体記憶装置の読み出し方法
JP4890016B2 (ja) * 2005-03-16 2012-03-07 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
KR100735750B1 (ko) 2005-12-15 2007-07-06 삼성전자주식회사 복수개의 균일한 기준 데이터들을 생성하는 기준 셀 블록및 감지증폭 유니트들을 구비하는 반도체 소자들 및 이를채택하는 시스템들
US8134866B2 (en) * 2006-04-06 2012-03-13 Samsung Electronics Co., Ltd. Phase change memory devices and systems, and related programming methods
US7382644B2 (en) * 2006-06-29 2008-06-03 Unity Semiconductor Corporation Two terminal memory array having reference cells
US8139432B2 (en) * 2006-12-27 2012-03-20 Samsung Electronics Co., Ltd. Variable resistance memory device and system thereof
JP2009117003A (ja) 2007-11-09 2009-05-28 Toshiba Corp 不揮発性メモリ装置のデータ読み出し方法
US8027192B2 (en) 2008-08-20 2011-09-27 Samsung Electronics Co., Ltd. Resistive memory devices using assymetrical bitline charging and discharging
JP2010079974A (ja) 2008-09-25 2010-04-08 Toshiba Corp 半導体記憶装置
JP2010182353A (ja) * 2009-02-04 2010-08-19 Elpida Memory Inc 半導体記憶装置とその読み出し方法
US8395925B2 (en) * 2009-06-08 2013-03-12 Panasonic Corporation Forming method for variable resistance nonvolatile memory element, and variable resistance nonvolatile memory device
JP5214566B2 (ja) * 2009-09-02 2013-06-19 株式会社東芝 抵抗変化メモリ装置
US8724414B2 (en) 2010-02-09 2014-05-13 Qualcomm Incorporated System and method to select a reference cell
US8587994B2 (en) * 2010-09-08 2013-11-19 Qualcomm Incorporated System and method for shared sensing MRAM
JP2012069181A (ja) * 2010-09-21 2012-04-05 Toshiba Corp 半導体記憶装置
JP5803480B2 (ja) * 2011-09-20 2015-11-04 株式会社ソシオネクスト 半導体記憶装置及びデータ読み出し方法
US8675390B2 (en) 2011-10-21 2014-03-18 Qualcomm Incorporated System and method for MRAM having controlled averagable and isolatable voltage reference

Also Published As

Publication number Publication date
KR20140093687A (ko) 2014-07-28
EP2769381A1 (en) 2014-08-27
JP2014531104A (ja) 2014-11-20
EP2769381B1 (en) 2019-09-25
US20160358649A1 (en) 2016-12-08
JP6054976B2 (ja) 2016-12-27
US9455031B2 (en) 2016-09-27
CN103890849B (zh) 2017-03-01
US9666274B2 (en) 2017-05-30
US20130100725A1 (en) 2013-04-25
WO2013059808A1 (en) 2013-04-25
CN103890849A (zh) 2014-06-25
US8675390B2 (en) 2014-03-18
KR101639343B1 (ko) 2016-07-22
US20140133216A1 (en) 2014-05-15

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