IN2013DN02549A - - Google Patents

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Publication number
IN2013DN02549A
IN2013DN02549A IN2549DEN2013A IN2013DN02549A IN 2013DN02549 A IN2013DN02549 A IN 2013DN02549A IN 2549DEN2013 A IN2549DEN2013 A IN 2549DEN2013A IN 2013DN02549 A IN2013DN02549 A IN 2013DN02549A
Authority
IN
India
Prior art keywords
semiconductor chip
trench
gap
insulating layer
polymeric filler
Prior art date
Application number
Other languages
English (en)
Inventor
Michael Z Su
Ahmed Gamal Refai
Bryan Black
Original Assignee
Advanced Micro Devices Inc
Ati Technologies Ulc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc, Ati Technologies Ulc filed Critical Advanced Micro Devices Inc
Publication of IN2013DN02549A publication Critical patent/IN2013DN02549A/en

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    • H01L23/18Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Dispersion Chemistry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
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Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012069734A (ja) * 2010-09-24 2012-04-05 Toshiba Corp 半導体装置の製造方法
US8952540B2 (en) 2011-06-30 2015-02-10 Intel Corporation In situ-built pin-grid arrays for coreless substrates, and methods of making same
US8704353B2 (en) 2012-03-30 2014-04-22 Advanced Micro Devices, Inc. Thermal management of stacked semiconductor chips with electrically non-functional interconnects
US9070656B2 (en) * 2013-06-12 2015-06-30 Micron Technology, Inc. Underfill-accommodating heat spreaders and related semiconductor device assemblies and methods
US20150262902A1 (en) 2014-03-12 2015-09-17 Invensas Corporation Integrated circuits protected by substrates with cavities, and methods of manufacture
US9355997B2 (en) 2014-03-12 2016-05-31 Invensas Corporation Integrated circuit assemblies with reinforcement frames, and methods of manufacture
US10020236B2 (en) 2014-03-14 2018-07-10 Taiwan Semiconductar Manufacturing Campany Dam for three-dimensional integrated circuit
US9165793B1 (en) 2014-05-02 2015-10-20 Invensas Corporation Making electrical components in handle wafers of integrated circuit packages
US9741649B2 (en) 2014-06-04 2017-08-22 Invensas Corporation Integrated interposer solutions for 2D and 3D IC packaging
US9412806B2 (en) 2014-06-13 2016-08-09 Invensas Corporation Making multilayer 3D capacitors using arrays of upstanding rods or ridges
US9252127B1 (en) 2014-07-10 2016-02-02 Invensas Corporation Microelectronic assemblies with integrated circuits and interposers with cavities, and methods of manufacture
US9478504B1 (en) 2015-06-19 2016-10-25 Invensas Corporation Microelectronic assemblies with cavities, and methods of fabrication
CN107548573A (zh) * 2015-07-31 2018-01-05 惠普发展公司,有限责任合伙企业 印刷电路板至模制化合物的接合部
EP3384530A1 (en) 2016-02-18 2018-10-10 Apple Inc. Backplane structure and process for microdriver and micro led
US20180005916A1 (en) * 2016-06-30 2018-01-04 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
US9837333B1 (en) * 2016-09-21 2017-12-05 International Business Machines Corporation Electronic package cover having underside rib
CN108022845B (zh) * 2016-11-02 2020-06-26 中芯国际集成电路制造(上海)有限公司 芯片封装方法及封装结构
US10861763B2 (en) 2016-11-26 2020-12-08 Texas Instruments Incorporated Thermal routing trench by additive processing
US10811334B2 (en) 2016-11-26 2020-10-20 Texas Instruments Incorporated Integrated circuit nanoparticle thermal routing structure in interconnect region
US10529641B2 (en) 2016-11-26 2020-01-07 Texas Instruments Incorporated Integrated circuit nanoparticle thermal routing structure over interconnect region
US10256188B2 (en) 2016-11-26 2019-04-09 Texas Instruments Incorporated Interconnect via with grown graphitic material
US11676880B2 (en) 2016-11-26 2023-06-13 Texas Instruments Incorporated High thermal conductivity vias by additive processing
US11004680B2 (en) 2016-11-26 2021-05-11 Texas Instruments Incorporated Semiconductor device package thermal conduit
US10607857B2 (en) * 2017-12-06 2020-03-31 Indium Corporation Semiconductor device assembly including a thermal interface bond between a semiconductor die and a passive heat exchanger
US11031317B2 (en) * 2019-10-09 2021-06-08 Toyota Motor Engineering & Manufacturing North America, Inc. Direct bonded metal substrates with encapsulated phase change materials and electronic assemblies incorporating the same
WO2022235914A1 (en) * 2021-05-07 2022-11-10 Materion Corporation Microelectronics package assemblies and processes for making

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6291264B1 (en) 2000-07-31 2001-09-18 Siliconware Precision Industries Co., Ltd. Flip-chip package structure and method of fabricating the same
US6472758B1 (en) 2000-07-20 2002-10-29 Amkor Technology, Inc. Semiconductor package including stacked semiconductor dies and bond wires
JP3857574B2 (ja) * 2001-11-21 2006-12-13 富士通株式会社 半導体装置及びその製造方法
US6753613B2 (en) 2002-03-13 2004-06-22 Intel Corporation Stacked dice standoffs
JP3925283B2 (ja) * 2002-04-16 2007-06-06 セイコーエプソン株式会社 電子デバイスの製造方法、電子機器の製造方法
JP2003324182A (ja) * 2002-04-30 2003-11-14 Fujitsu Ltd フリップチップ接合方法及びフリップチップ接合構造
US6933221B1 (en) 2002-06-24 2005-08-23 Micron Technology, Inc. Method for underfilling semiconductor components using no flow underfill
US6906415B2 (en) 2002-06-27 2005-06-14 Micron Technology, Inc. Semiconductor device assemblies and packages including multiple semiconductor devices and methods
JP4260617B2 (ja) 2003-12-24 2009-04-30 株式会社ルネサステクノロジ 半導体装置の製造方法
US7122906B2 (en) 2004-01-29 2006-10-17 Micron Technology, Inc. Die-wafer package and method of fabricating same
US7095105B2 (en) 2004-03-23 2006-08-22 Texas Instruments Incorporated Vertically stacked semiconductor device
US7223638B2 (en) * 2004-05-13 2007-05-29 Intel Corporation Microelectronic assembly having a thermally conductive member with a cavity to contain a portion of a thermal interface material
JP2005353420A (ja) * 2004-06-10 2005-12-22 Sony Corp 導電性材料、導電性材料担持シート、導電性材料の充填方法及び装置
KR100570514B1 (ko) 2004-06-18 2006-04-13 삼성전자주식회사 웨이퍼 레벨 칩 스택 패키지 제조 방법
US7239517B2 (en) * 2005-04-11 2007-07-03 Intel Corporation Integrated heat spreader and method for using
JP4760361B2 (ja) * 2005-12-20 2011-08-31 ソニー株式会社 半導体装置
JP4764159B2 (ja) * 2005-12-20 2011-08-31 富士通セミコンダクター株式会社 半導体装置
US7863727B2 (en) 2006-02-06 2011-01-04 Micron Technology, Inc. Microelectronic devices and methods for manufacturing microelectronic devices
US20070200234A1 (en) 2006-02-28 2007-08-30 Texas Instruments Incorporated Flip-Chip Device Having Underfill in Controlled Gap
JP2007234988A (ja) * 2006-03-02 2007-09-13 Epson Toyocom Corp 半導体素子の実装基板及び実装方法
JP4910439B2 (ja) * 2006-03-23 2012-04-04 富士通セミコンダクター株式会社 半導体装置
US8110933B2 (en) * 2006-12-26 2012-02-07 Panasonic Corporation Semiconductor device mounted structure and semiconductor device mounted method
US20080169555A1 (en) 2007-01-16 2008-07-17 Ati Technologies Ulc Anchor structure for an integrated circuit
JP2008235655A (ja) * 2007-03-22 2008-10-02 Hitachi Aic Inc 基板及びこの基板の製造方法
JP2009277334A (ja) * 2008-04-14 2009-11-26 Hitachi Ltd 情報処理装置および半導体記憶装置
JP2010021347A (ja) * 2008-07-10 2010-01-28 Oki Semiconductor Co Ltd 多層チップ型半導体装置及びその製造方法

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