IN2013DN02549A - - Google Patents
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- Publication number
- IN2013DN02549A IN2013DN02549A IN2549DEN2013A IN2013DN02549A IN 2013DN02549 A IN2013DN02549 A IN 2013DN02549A IN 2549DEN2013 A IN2549DEN2013 A IN 2549DEN2013A IN 2013DN02549 A IN2013DN02549 A IN 2013DN02549A
- Authority
- IN
- India
- Prior art keywords
- semiconductor chip
- trench
- gap
- insulating layer
- polymeric filler
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000000945 filler Substances 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
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- H01L2924/161—Cap
- H01L2924/166—Material
- H01L2924/167—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Dispersion Chemistry (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Wire Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Element Separation (AREA)
- Dicing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US12/878,795 US8617926B2 (en) | 2010-09-09 | 2010-09-09 | Semiconductor chip device with polymeric filler trench |
PCT/US2011/051058 WO2012034052A1 (en) | 2010-09-09 | 2011-09-09 | Semiconductor chip device with polymeric filler trench |
Publications (1)
Publication Number | Publication Date |
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IN2013DN02549A true IN2013DN02549A (ko) | 2015-08-07 |
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JP (1) | JP2013537365A (ko) |
KR (1) | KR20130140643A (ko) |
CN (1) | CN103119702A (ko) |
IN (1) | IN2013DN02549A (ko) |
WO (1) | WO2012034052A1 (ko) |
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JP2012069734A (ja) * | 2010-09-24 | 2012-04-05 | Toshiba Corp | 半導体装置の製造方法 |
US8952540B2 (en) | 2011-06-30 | 2015-02-10 | Intel Corporation | In situ-built pin-grid arrays for coreless substrates, and methods of making same |
US8704353B2 (en) | 2012-03-30 | 2014-04-22 | Advanced Micro Devices, Inc. | Thermal management of stacked semiconductor chips with electrically non-functional interconnects |
US9070656B2 (en) * | 2013-06-12 | 2015-06-30 | Micron Technology, Inc. | Underfill-accommodating heat spreaders and related semiconductor device assemblies and methods |
US20150262902A1 (en) | 2014-03-12 | 2015-09-17 | Invensas Corporation | Integrated circuits protected by substrates with cavities, and methods of manufacture |
US9355997B2 (en) | 2014-03-12 | 2016-05-31 | Invensas Corporation | Integrated circuit assemblies with reinforcement frames, and methods of manufacture |
US10020236B2 (en) | 2014-03-14 | 2018-07-10 | Taiwan Semiconductar Manufacturing Campany | Dam for three-dimensional integrated circuit |
US9165793B1 (en) | 2014-05-02 | 2015-10-20 | Invensas Corporation | Making electrical components in handle wafers of integrated circuit packages |
US9741649B2 (en) | 2014-06-04 | 2017-08-22 | Invensas Corporation | Integrated interposer solutions for 2D and 3D IC packaging |
US9412806B2 (en) | 2014-06-13 | 2016-08-09 | Invensas Corporation | Making multilayer 3D capacitors using arrays of upstanding rods or ridges |
US9252127B1 (en) | 2014-07-10 | 2016-02-02 | Invensas Corporation | Microelectronic assemblies with integrated circuits and interposers with cavities, and methods of manufacture |
US9478504B1 (en) | 2015-06-19 | 2016-10-25 | Invensas Corporation | Microelectronic assemblies with cavities, and methods of fabrication |
CN107548573A (zh) * | 2015-07-31 | 2018-01-05 | 惠普发展公司,有限责任合伙企业 | 印刷电路板至模制化合物的接合部 |
EP3384530A1 (en) | 2016-02-18 | 2018-10-10 | Apple Inc. | Backplane structure and process for microdriver and micro led |
US20180005916A1 (en) * | 2016-06-30 | 2018-01-04 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
US9837333B1 (en) * | 2016-09-21 | 2017-12-05 | International Business Machines Corporation | Electronic package cover having underside rib |
CN108022845B (zh) * | 2016-11-02 | 2020-06-26 | 中芯国际集成电路制造(上海)有限公司 | 芯片封装方法及封装结构 |
US10861763B2 (en) | 2016-11-26 | 2020-12-08 | Texas Instruments Incorporated | Thermal routing trench by additive processing |
US10811334B2 (en) | 2016-11-26 | 2020-10-20 | Texas Instruments Incorporated | Integrated circuit nanoparticle thermal routing structure in interconnect region |
US10529641B2 (en) | 2016-11-26 | 2020-01-07 | Texas Instruments Incorporated | Integrated circuit nanoparticle thermal routing structure over interconnect region |
US10256188B2 (en) | 2016-11-26 | 2019-04-09 | Texas Instruments Incorporated | Interconnect via with grown graphitic material |
US11676880B2 (en) | 2016-11-26 | 2023-06-13 | Texas Instruments Incorporated | High thermal conductivity vias by additive processing |
US11004680B2 (en) | 2016-11-26 | 2021-05-11 | Texas Instruments Incorporated | Semiconductor device package thermal conduit |
US10607857B2 (en) * | 2017-12-06 | 2020-03-31 | Indium Corporation | Semiconductor device assembly including a thermal interface bond between a semiconductor die and a passive heat exchanger |
US11031317B2 (en) * | 2019-10-09 | 2021-06-08 | Toyota Motor Engineering & Manufacturing North America, Inc. | Direct bonded metal substrates with encapsulated phase change materials and electronic assemblies incorporating the same |
WO2022235914A1 (en) * | 2021-05-07 | 2022-11-10 | Materion Corporation | Microelectronics package assemblies and processes for making |
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US6291264B1 (en) | 2000-07-31 | 2001-09-18 | Siliconware Precision Industries Co., Ltd. | Flip-chip package structure and method of fabricating the same |
US6472758B1 (en) | 2000-07-20 | 2002-10-29 | Amkor Technology, Inc. | Semiconductor package including stacked semiconductor dies and bond wires |
JP3857574B2 (ja) * | 2001-11-21 | 2006-12-13 | 富士通株式会社 | 半導体装置及びその製造方法 |
US6753613B2 (en) | 2002-03-13 | 2004-06-22 | Intel Corporation | Stacked dice standoffs |
JP3925283B2 (ja) * | 2002-04-16 | 2007-06-06 | セイコーエプソン株式会社 | 電子デバイスの製造方法、電子機器の製造方法 |
JP2003324182A (ja) * | 2002-04-30 | 2003-11-14 | Fujitsu Ltd | フリップチップ接合方法及びフリップチップ接合構造 |
US6933221B1 (en) | 2002-06-24 | 2005-08-23 | Micron Technology, Inc. | Method for underfilling semiconductor components using no flow underfill |
US6906415B2 (en) | 2002-06-27 | 2005-06-14 | Micron Technology, Inc. | Semiconductor device assemblies and packages including multiple semiconductor devices and methods |
JP4260617B2 (ja) | 2003-12-24 | 2009-04-30 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US7122906B2 (en) | 2004-01-29 | 2006-10-17 | Micron Technology, Inc. | Die-wafer package and method of fabricating same |
US7095105B2 (en) | 2004-03-23 | 2006-08-22 | Texas Instruments Incorporated | Vertically stacked semiconductor device |
US7223638B2 (en) * | 2004-05-13 | 2007-05-29 | Intel Corporation | Microelectronic assembly having a thermally conductive member with a cavity to contain a portion of a thermal interface material |
JP2005353420A (ja) * | 2004-06-10 | 2005-12-22 | Sony Corp | 導電性材料、導電性材料担持シート、導電性材料の充填方法及び装置 |
KR100570514B1 (ko) | 2004-06-18 | 2006-04-13 | 삼성전자주식회사 | 웨이퍼 레벨 칩 스택 패키지 제조 방법 |
US7239517B2 (en) * | 2005-04-11 | 2007-07-03 | Intel Corporation | Integrated heat spreader and method for using |
JP4760361B2 (ja) * | 2005-12-20 | 2011-08-31 | ソニー株式会社 | 半導体装置 |
JP4764159B2 (ja) * | 2005-12-20 | 2011-08-31 | 富士通セミコンダクター株式会社 | 半導体装置 |
US7863727B2 (en) | 2006-02-06 | 2011-01-04 | Micron Technology, Inc. | Microelectronic devices and methods for manufacturing microelectronic devices |
US20070200234A1 (en) | 2006-02-28 | 2007-08-30 | Texas Instruments Incorporated | Flip-Chip Device Having Underfill in Controlled Gap |
JP2007234988A (ja) * | 2006-03-02 | 2007-09-13 | Epson Toyocom Corp | 半導体素子の実装基板及び実装方法 |
JP4910439B2 (ja) * | 2006-03-23 | 2012-04-04 | 富士通セミコンダクター株式会社 | 半導体装置 |
US8110933B2 (en) * | 2006-12-26 | 2012-02-07 | Panasonic Corporation | Semiconductor device mounted structure and semiconductor device mounted method |
US20080169555A1 (en) | 2007-01-16 | 2008-07-17 | Ati Technologies Ulc | Anchor structure for an integrated circuit |
JP2008235655A (ja) * | 2007-03-22 | 2008-10-02 | Hitachi Aic Inc | 基板及びこの基板の製造方法 |
JP2009277334A (ja) * | 2008-04-14 | 2009-11-26 | Hitachi Ltd | 情報処理装置および半導体記憶装置 |
JP2010021347A (ja) * | 2008-07-10 | 2010-01-28 | Oki Semiconductor Co Ltd | 多層チップ型半導体装置及びその製造方法 |
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CN103119702A (zh) | 2013-05-22 |
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US8866276B2 (en) | 2014-10-21 |
EP2614522A1 (en) | 2013-07-17 |
KR20130140643A (ko) | 2013-12-24 |
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