IN2013CN05221A - - Google Patents

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Publication number
IN2013CN05221A
IN2013CN05221A IN5221CHN2013A IN2013CN05221A IN 2013CN05221 A IN2013CN05221 A IN 2013CN05221A IN 5221CHN2013 A IN5221CHN2013 A IN 5221CHN2013A IN 2013CN05221 A IN2013CN05221 A IN 2013CN05221A
Authority
IN
India
Prior art keywords
nanoparticles
nanoparticle
substrate
target
hollow
Prior art date
Application number
Other languages
English (en)
Inventor
Jian Ping Wang
Shihai He
Original Assignee
Univ Minnesota
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Minnesota filed Critical Univ Minnesota
Publication of IN2013CN05221A publication Critical patent/IN2013CN05221A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/223—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating specially adapted for coating particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/342—Hollow targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
IN5221CHN2013 2011-01-13 2012-01-13 IN2013CN05221A (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161432421P 2011-01-13 2011-01-13
PCT/US2012/021269 WO2012097268A2 (en) 2011-01-13 2012-01-13 Nanoparticle deposition systems

Publications (1)

Publication Number Publication Date
IN2013CN05221A true IN2013CN05221A (enExample) 2015-08-07

Family

ID=46489954

Family Applications (1)

Application Number Title Priority Date Filing Date
IN5221CHN2013 IN2013CN05221A (enExample) 2011-01-13 2012-01-13

Country Status (6)

Country Link
US (2) US20120181171A1 (enExample)
EP (1) EP2663666A4 (enExample)
CN (1) CN103459658B (enExample)
IN (1) IN2013CN05221A (enExample)
RU (1) RU2013137749A (enExample)
WO (1) WO2012097268A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2956258A1 (en) * 2013-02-15 2015-12-23 Regents of the University of Minnesota Particle functionalization
KR101772686B1 (ko) 2016-02-02 2017-08-29 연세대학교 원주산학협력단 나노입자 약물 전달 장치 및 그의 제어 방법
CN109881166B (zh) 2016-03-30 2021-04-20 京浜乐梦金属科技株式会社 溅射阴极、溅射装置和成膜体的制造方法
JP6807246B2 (ja) * 2017-02-23 2021-01-06 東京エレクトロン株式会社 基板処理装置、および、処理システム
GB2560008B (en) * 2017-02-24 2020-03-25 Binns David An appratus and method related to core shell magnetic nanoparticles and structured nanoparticles
GB2566995B (en) 2017-09-29 2023-01-18 Cotton Mouton Diagnostics Ltd A method of detection
CN110578127B (zh) * 2019-10-31 2024-05-24 浙江工业大学 一种提升磁控溅射镀膜沉积速率装置
CN113564553A (zh) * 2021-08-06 2021-10-29 昆山祁御新材料科技有限公司 一种旋转靶材的制作工艺及设备

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3669860A (en) * 1970-04-01 1972-06-13 Zenith Radio Corp Method and apparatus for applying a film to a substrate surface by diode sputtering
JP3034076B2 (ja) * 1991-04-18 2000-04-17 日本真空技術株式会社 金属イオン源
US5228963A (en) * 1991-07-01 1993-07-20 Himont Incorporated Hollow-cathode magnetron and method of making thin films
US5482611A (en) * 1991-09-30 1996-01-09 Helmer; John C. Physical vapor deposition employing ion extraction from a plasma
US5334302A (en) * 1991-11-15 1994-08-02 Tokyo Electron Limited Magnetron sputtering apparatus and sputtering gun for use in the same
US7144627B2 (en) * 1997-03-12 2006-12-05 William Marsh Rice University Multi-layer nanoshells comprising a metallic or conducting shell
JPH111770A (ja) * 1997-06-06 1999-01-06 Anelva Corp スパッタリング装置及びスパッタリング方法
US6217716B1 (en) * 1998-05-06 2001-04-17 Novellus Systems, Inc. Apparatus and method for improving target erosion in hollow cathode magnetron sputter source
SE521904C2 (sv) * 1999-11-26 2003-12-16 Ladislav Bardos Anordning för hybridplasmabehandling
US20040000478A1 (en) * 2002-06-26 2004-01-01 Guenzer Charles S. Rotating hollow cathode magnetron
US20060081467A1 (en) * 2004-10-15 2006-04-20 Makoto Nagashima Systems and methods for magnetron deposition
CA2626915A1 (en) * 2005-10-24 2007-05-03 Soleras Ltd. Cathode incorporating fixed or rotating target in combination with a moving magnet assembly and applications thereof
KR20080080365A (ko) * 2005-12-13 2008-09-03 오씨 외를리콘 발처스 악티엔게젤샤프트 스퍼터 타겟의 개선된 이용도
US7951276B2 (en) * 2006-06-08 2011-05-31 The Board Of Trustees Of The University Of Illinois Cluster generator
EP2017367A1 (en) * 2007-07-18 2009-01-21 Applied Materials, Inc. Sputter coating device and method of depositing a layer on a substrate
CA2765337C (en) * 2008-06-13 2016-05-17 Fablab Inc. A system and method for fabricating macroscopic objects, and nano-assembled objects obtained therewith
GB2461094B (en) * 2008-06-20 2012-08-22 Mantis Deposition Ltd Deposition of materials
CN201545907U (zh) * 2009-11-17 2010-08-11 深圳市振恒昌实业有限公司 一种新型靶管旋转磁控溅射圆柱靶
WO2011159834A1 (en) * 2010-06-15 2011-12-22 Superdimension, Ltd. Locatable expandable working channel and method

Also Published As

Publication number Publication date
US20180127865A1 (en) 2018-05-10
WO2012097268A3 (en) 2013-01-17
CN103459658B (zh) 2015-09-23
EP2663666A4 (en) 2014-08-20
WO2012097268A2 (en) 2012-07-19
EP2663666A2 (en) 2013-11-20
US20120181171A1 (en) 2012-07-19
CN103459658A (zh) 2013-12-18
RU2013137749A (ru) 2015-02-20

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