IN2013CN05221A - - Google Patents

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Publication number
IN2013CN05221A
IN2013CN05221A IN5221CHN2013A IN2013CN05221A IN 2013CN05221 A IN2013CN05221 A IN 2013CN05221A IN 5221CHN2013 A IN5221CHN2013 A IN 5221CHN2013A IN 2013CN05221 A IN2013CN05221 A IN 2013CN05221A
Authority
IN
India
Prior art keywords
nanoparticles
nanoparticle
substrate
target
hollow
Prior art date
Application number
Inventor
Jian Ping Wang
Shihai He
Original Assignee
Univ Minnesota
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Minnesota filed Critical Univ Minnesota
Publication of IN2013CN05221A publication Critical patent/IN2013CN05221A/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/223—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating specially adapted for coating particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/342—Hollow targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

Nanoparticle deposition systems including one or more of: a hollow target of a material; at least one rotating magnet providing a magnetic field that controls movement of ions and crystallization of nanoparticles from released atoms; a nanoparticle collection device that collects crystallized nanoparticles on a substrate wherein relative motion between the substrate and at least a target continuously expose new surface areas of the substrate to the crystallized nanoparticles; a hollow anode with a target at least partially inside the hollow anode; or a first nanoparticle source providing first nanoparticles of a first material and a second nanoparticle source providing second nanoparticles of a second material.
IN5221CHN2013 2011-01-13 2012-01-13 IN2013CN05221A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161432421P 2011-01-13 2011-01-13
PCT/US2012/021269 WO2012097268A2 (en) 2011-01-13 2012-01-13 Nanoparticle deposition systems

Publications (1)

Publication Number Publication Date
IN2013CN05221A true IN2013CN05221A (en) 2015-08-07

Family

ID=46489954

Family Applications (1)

Application Number Title Priority Date Filing Date
IN5221CHN2013 IN2013CN05221A (en) 2011-01-13 2012-01-13

Country Status (6)

Country Link
US (2) US20120181171A1 (en)
EP (1) EP2663666A4 (en)
CN (1) CN103459658B (en)
IN (1) IN2013CN05221A (en)
RU (1) RU2013137749A (en)
WO (1) WO2012097268A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150119188A (en) 2013-02-15 2015-10-23 리젠츠 오브 더 유니버시티 오브 미네소타 Particle Functionalization
KR101772686B1 (en) 2016-02-02 2017-08-29 연세대학교 원주산학협력단 Nanoparticle drug delivery apparatus and method for controlling the same
KR20200036065A (en) 2016-03-30 2020-04-06 케이힌 람테크 가부시키가이샤 Sputtering cathode, sputtering apparatus and manufacturing method of film forming element
JP6807246B2 (en) * 2017-02-23 2021-01-06 東京エレクトロン株式会社 Substrate processing equipment and processing system
GB2560008B (en) * 2017-02-24 2020-03-25 Binns David An appratus and method related to core shell magnetic nanoparticles and structured nanoparticles
GB2566995B (en) 2017-09-29 2023-01-18 Cotton Mouton Diagnostics Ltd A method of detection
CN110578127A (en) * 2019-10-31 2019-12-17 浙江工业大学 Device for increasing deposition rate of magnetron sputtering coating
CN113564553A (en) * 2021-08-06 2021-10-29 昆山祁御新材料科技有限公司 Manufacturing process and equipment of rotary target material

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US3669860A (en) * 1970-04-01 1972-06-13 Zenith Radio Corp Method and apparatus for applying a film to a substrate surface by diode sputtering
JP3034076B2 (en) * 1991-04-18 2000-04-17 日本真空技術株式会社 Metal ion source
US5228963A (en) * 1991-07-01 1993-07-20 Himont Incorporated Hollow-cathode magnetron and method of making thin films
US5482611A (en) * 1991-09-30 1996-01-09 Helmer; John C. Physical vapor deposition employing ion extraction from a plasma
US5334302A (en) * 1991-11-15 1994-08-02 Tokyo Electron Limited Magnetron sputtering apparatus and sputtering gun for use in the same
US7144627B2 (en) * 1997-03-12 2006-12-05 William Marsh Rice University Multi-layer nanoshells comprising a metallic or conducting shell
JPH111770A (en) * 1997-06-06 1999-01-06 Anelva Corp Sputtering apparatus and sputtering method
US6217716B1 (en) * 1998-05-06 2001-04-17 Novellus Systems, Inc. Apparatus and method for improving target erosion in hollow cathode magnetron sputter source
SE521904C2 (en) * 1999-11-26 2003-12-16 Ladislav Bardos Hybrid Plasma Treatment Device
US20040000478A1 (en) * 2002-06-26 2004-01-01 Guenzer Charles S. Rotating hollow cathode magnetron
US20060081467A1 (en) * 2004-10-15 2006-04-20 Makoto Nagashima Systems and methods for magnetron deposition
US20070089983A1 (en) * 2005-10-24 2007-04-26 Soleras Ltd. Cathode incorporating fixed or rotating target in combination with a moving magnet assembly and applications thereof
CN101375366B (en) * 2005-12-13 2011-04-27 欧瑞康太阳Ip股份公司 Improved sputter target utilization
US7951276B2 (en) * 2006-06-08 2011-05-31 The Board Of Trustees Of The University Of Illinois Cluster generator
EP2017367A1 (en) * 2007-07-18 2009-01-21 Applied Materials, Inc. Sputter coating device and method of depositing a layer on a substrate
WO2009149563A1 (en) * 2008-06-13 2009-12-17 Fablab Inc. A system and method for fabricating macroscopic objects, and nano-assembled objects obtained therewith
GB2461094B (en) * 2008-06-20 2012-08-22 Mantis Deposition Ltd Deposition of materials
CN201545907U (en) * 2009-11-17 2010-08-11 深圳市振恒昌实业有限公司 Novel target tube rotary magnetic control splashing cylindrical target
US10582834B2 (en) * 2010-06-15 2020-03-10 Covidien Lp Locatable expandable working channel and method

Also Published As

Publication number Publication date
CN103459658B (en) 2015-09-23
EP2663666A4 (en) 2014-08-20
US20180127865A1 (en) 2018-05-10
EP2663666A2 (en) 2013-11-20
US20120181171A1 (en) 2012-07-19
RU2013137749A (en) 2015-02-20
WO2012097268A2 (en) 2012-07-19
CN103459658A (en) 2013-12-18
WO2012097268A3 (en) 2013-01-17

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