CN103459658B - 纳米颗粒沉积系统 - Google Patents

纳米颗粒沉积系统 Download PDF

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Publication number
CN103459658B
CN103459658B CN201280005339.XA CN201280005339A CN103459658B CN 103459658 B CN103459658 B CN 103459658B CN 201280005339 A CN201280005339 A CN 201280005339A CN 103459658 B CN103459658 B CN 103459658B
Authority
CN
China
Prior art keywords
target
nanoparticles
deposition system
magnet
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201280005339.XA
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English (en)
Chinese (zh)
Other versions
CN103459658A (zh
Inventor
J-P·王
S·何
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Minnesota Twin Cities
Original Assignee
University of Minnesota Twin Cities
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Publication of CN103459658A publication Critical patent/CN103459658A/zh
Application granted granted Critical
Publication of CN103459658B publication Critical patent/CN103459658B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/223—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating specially adapted for coating particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/342—Hollow targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CN201280005339.XA 2011-01-13 2012-01-13 纳米颗粒沉积系统 Expired - Fee Related CN103459658B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161432421P 2011-01-13 2011-01-13
US61/432,421 2011-01-13
PCT/US2012/021269 WO2012097268A2 (en) 2011-01-13 2012-01-13 Nanoparticle deposition systems

Publications (2)

Publication Number Publication Date
CN103459658A CN103459658A (zh) 2013-12-18
CN103459658B true CN103459658B (zh) 2015-09-23

Family

ID=46489954

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280005339.XA Expired - Fee Related CN103459658B (zh) 2011-01-13 2012-01-13 纳米颗粒沉积系统

Country Status (6)

Country Link
US (2) US20120181171A1 (enExample)
EP (1) EP2663666A4 (enExample)
CN (1) CN103459658B (enExample)
IN (1) IN2013CN05221A (enExample)
RU (1) RU2013137749A (enExample)
WO (1) WO2012097268A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105121068A (zh) * 2013-02-15 2015-12-02 明尼苏达大学董事会 颗粒功能化
KR101772686B1 (ko) 2016-02-02 2017-08-29 연세대학교 원주산학협력단 나노입자 약물 전달 장치 및 그의 제어 방법
WO2017169029A1 (ja) * 2016-03-30 2017-10-05 京浜ラムテック株式会社 スパッタリングカソード、スパッタリング装置および成膜体の製造方法
JP6807246B2 (ja) * 2017-02-23 2021-01-06 東京エレクトロン株式会社 基板処理装置、および、処理システム
GB2560008B (en) * 2017-02-24 2020-03-25 Binns David An appratus and method related to core shell magnetic nanoparticles and structured nanoparticles
GB2566995B (en) 2017-09-29 2023-01-18 Cotton Mouton Diagnostics Ltd A method of detection
CN110578127B (zh) * 2019-10-31 2024-05-24 浙江工业大学 一种提升磁控溅射镀膜沉积速率装置
CN113564553A (zh) * 2021-08-06 2021-10-29 昆山祁御新材料科技有限公司 一种旋转靶材的制作工艺及设备

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6077403A (en) * 1997-06-06 2000-06-20 Anelva Corporation Sputtering device and sputtering method
US20060081467A1 (en) * 2004-10-15 2006-04-20 Makoto Nagashima Systems and methods for magnetron deposition
CN101297059A (zh) * 2005-10-24 2008-10-29 索莱拉斯有限公司 结合固定或者旋转靶的阴极与移动磁体组件的组合及其应用
US20090020416A1 (en) * 2007-07-18 2009-01-22 Applied Materials, Inc. Sputter coating device and method of depositing a layer on a substrate
EP2136388A2 (en) * 2008-06-20 2009-12-23 Mantis Deposition Limited Deposition of Materials
CN201545907U (zh) * 2009-11-17 2010-08-11 深圳市振恒昌实业有限公司 一种新型靶管旋转磁控溅射圆柱靶

Family Cites Families (13)

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Publication number Priority date Publication date Assignee Title
US3669860A (en) * 1970-04-01 1972-06-13 Zenith Radio Corp Method and apparatus for applying a film to a substrate surface by diode sputtering
JP3034076B2 (ja) * 1991-04-18 2000-04-17 日本真空技術株式会社 金属イオン源
US5228963A (en) * 1991-07-01 1993-07-20 Himont Incorporated Hollow-cathode magnetron and method of making thin films
US5482611A (en) * 1991-09-30 1996-01-09 Helmer; John C. Physical vapor deposition employing ion extraction from a plasma
US5334302A (en) * 1991-11-15 1994-08-02 Tokyo Electron Limited Magnetron sputtering apparatus and sputtering gun for use in the same
US7144627B2 (en) * 1997-03-12 2006-12-05 William Marsh Rice University Multi-layer nanoshells comprising a metallic or conducting shell
US6217716B1 (en) * 1998-05-06 2001-04-17 Novellus Systems, Inc. Apparatus and method for improving target erosion in hollow cathode magnetron sputter source
SE521904C2 (sv) * 1999-11-26 2003-12-16 Ladislav Bardos Anordning för hybridplasmabehandling
US20040000478A1 (en) * 2002-06-26 2004-01-01 Guenzer Charles S. Rotating hollow cathode magnetron
CN101375366B (zh) * 2005-12-13 2011-04-27 欧瑞康太阳Ip股份公司 改良溅射靶应用
US7951276B2 (en) * 2006-06-08 2011-05-31 The Board Of Trustees Of The University Of Illinois Cluster generator
WO2009149563A1 (en) * 2008-06-13 2009-12-17 Fablab Inc. A system and method for fabricating macroscopic objects, and nano-assembled objects obtained therewith
WO2011159834A1 (en) * 2010-06-15 2011-12-22 Superdimension, Ltd. Locatable expandable working channel and method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6077403A (en) * 1997-06-06 2000-06-20 Anelva Corporation Sputtering device and sputtering method
US20060081467A1 (en) * 2004-10-15 2006-04-20 Makoto Nagashima Systems and methods for magnetron deposition
CN101297059A (zh) * 2005-10-24 2008-10-29 索莱拉斯有限公司 结合固定或者旋转靶的阴极与移动磁体组件的组合及其应用
US20090020416A1 (en) * 2007-07-18 2009-01-22 Applied Materials, Inc. Sputter coating device and method of depositing a layer on a substrate
EP2136388A2 (en) * 2008-06-20 2009-12-23 Mantis Deposition Limited Deposition of Materials
CN201545907U (zh) * 2009-11-17 2010-08-11 深圳市振恒昌实业有限公司 一种新型靶管旋转磁控溅射圆柱靶

Also Published As

Publication number Publication date
EP2663666A2 (en) 2013-11-20
EP2663666A4 (en) 2014-08-20
WO2012097268A2 (en) 2012-07-19
IN2013CN05221A (enExample) 2015-08-07
US20120181171A1 (en) 2012-07-19
WO2012097268A3 (en) 2013-01-17
CN103459658A (zh) 2013-12-18
RU2013137749A (ru) 2015-02-20
US20180127865A1 (en) 2018-05-10

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Granted publication date: 20150923

Termination date: 20170113