IN168174B - - Google Patents
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- Publication number
- IN168174B IN168174B IN195/CAL/87A IN195CA1987A IN168174B IN 168174 B IN168174 B IN 168174B IN 195CA1987 A IN195CA1987 A IN 195CA1987A IN 168174 B IN168174 B IN 168174B
- Authority
- IN
- India
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4827—Materials
- H01L23/4828—Conductive organic material or pastes, e.g. conductive adhesives, inks
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/278—Post-treatment of the layer connector
- H01L2224/27848—Thermal treatments, e.g. annealing, controlled cooling
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/83048—Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
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- H01L2224/8319—Arrangement of the layer connectors prior to mounting
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- H01L2224/838—Bonding techniques
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83909—Post-treatment of the layer connector or bonding area
- H01L2224/83948—Thermal treatments, e.g. annealing, controlled cooling
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- H01L2924/01004—Beryllium [Be]
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H01L2924/3025—Electromagnetic shielding
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- H01L2924/351—Thermal stress
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/012—Bonding, e.g. electrostatic for strain gauges
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/054—Flat sheets-substrates
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electrodes Of Semiconductors (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3613572 | 1986-04-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
IN168174B true IN168174B (nl) | 1991-02-16 |
Family
ID=6299247
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN195/CAL/87A IN168174B (nl) | 1986-04-22 | 1987-03-10 |
Country Status (6)
Country | Link |
---|---|
US (1) | US4810672A (nl) |
EP (1) | EP0242626B1 (nl) |
JP (1) | JP2515708B2 (nl) |
BR (1) | BR8701876A (nl) |
DE (1) | DE3770683D1 (nl) |
IN (1) | IN168174B (nl) |
Families Citing this family (81)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0275433B1 (de) * | 1986-12-22 | 1992-04-01 | Siemens Aktiengesellschaft | Verfahren zur Befestigung von elektronischen Bauelementen auf einem Substrat, Folie zur Durchführung des Verfahrens und Verfahren zur Herstellung der Folie |
EP0330896A3 (de) * | 1988-03-03 | 1991-01-09 | Siemens Aktiengesellschaft | Verfahren zum Befestigen von Halbleiterbauelementen auf Substraten und Anordnungen zur Durchführung desselben |
DE58908749D1 (de) * | 1988-03-03 | 1995-01-26 | Siemens Ag | Verfahren zum Befestigen von elektronischen Bauelementen auf Substraten und Anordnung zur Durchführung desselben. |
US4927069A (en) * | 1988-07-15 | 1990-05-22 | Sanken Electric Co., Ltd. | Soldering method capable of providing a joint of reduced thermal resistance |
DE3917765C2 (de) * | 1989-05-31 | 1996-05-30 | Siemens Ag | Verfahren zum Verbinden von zwei scheibenförmigen Körpern aus Materialien unterschiedlicher thermischer Ausdehnungskoeffizienten und dessen Verwendung |
CA2030865C (en) * | 1989-11-30 | 1993-01-12 | Kenichi Fuse | Method of forming a solder layer on pads of a circuit board and method of mounting an electronic part on a circuit board |
EP0460286A3 (en) * | 1990-06-06 | 1992-02-26 | Siemens Aktiengesellschaft | Method and arrangement for bonding a semiconductor component to a substrate or for finishing a semiconductor/substrate connection by contactless pressing |
EP0477600A1 (de) * | 1990-09-26 | 1992-04-01 | Siemens Aktiengesellschaft | Verfahren zum Befestigen eines mit wenigstens einem Halbleiterbauelement versehenen Halbleiterkörpers auf einem Substrat |
US5693574A (en) * | 1991-02-22 | 1997-12-02 | Deutsche Aerospace Ag | Process for the laminar joining of silicon semiconductor slices |
DE4110318C2 (de) * | 1991-03-28 | 2001-10-11 | Bosch Gmbh Robert | Verfahren zum Zusammenlöten zweier Bauteile |
DE59209470D1 (de) * | 1991-06-24 | 1998-10-01 | Siemens Ag | Halbleiterbauelement und Verfahren zu seiner Herstellung |
US5403783A (en) * | 1992-12-28 | 1995-04-04 | Hitachi, Ltd. | Integrated circuit substrate with cooling accelerator substrate |
DE4315272A1 (de) * | 1993-05-07 | 1994-11-10 | Siemens Ag | Leistungshalbleiterbauelement mit Pufferschicht |
JPH08242009A (ja) * | 1994-12-02 | 1996-09-17 | Eurec Europ G Fur Leistungshalbleiter Mbh & Co Kg | パワー半導体デバイス |
US5607882A (en) * | 1994-12-20 | 1997-03-04 | Lucent Technologies Inc. | Multi-component electronic devices and methods for making them |
DE59611448D1 (de) * | 1995-09-11 | 2007-12-06 | Infineon Technologies Ag | Verfahren zur Befestigung elektronischer Bauelemente auf einem Substrat durch Drucksintern |
US5967030A (en) * | 1995-11-17 | 1999-10-19 | Micron Technology, Inc. | Global planarization method and apparatus |
JP3928753B2 (ja) | 1996-08-06 | 2007-06-13 | 日立化成工業株式会社 | マルチチップ実装法、および接着剤付チップの製造方法 |
DE19639934A1 (de) * | 1996-09-27 | 1998-04-09 | Siemens Ag | Verfahren zur Flipchip-Kontaktierung eines Halbleiterchips mit geringer Anschlußzahl |
US6316363B1 (en) | 1999-09-02 | 2001-11-13 | Micron Technology, Inc. | Deadhesion method and mechanism for wafer processing |
US6331488B1 (en) * | 1997-05-23 | 2001-12-18 | Micron Technology, Inc. | Planarization process for semiconductor substrates |
US6218316B1 (en) | 1998-10-22 | 2001-04-17 | Micron Technology, Inc. | Planarization of non-planar surfaces in device fabrication |
DE10009678C1 (de) * | 2000-02-29 | 2001-07-19 | Siemens Ag | Wärmeleitende Klebstoffverbindung und Verfahren zum Herstellen einer wärmeleitenden Klebstoffverbindung |
DE10016129A1 (de) * | 2000-03-31 | 2001-10-18 | Siemens Ag | Verfahren zum Herstellen einer wärmeleitenden Verbindung zwischen zwei Werkstücken |
AU2001264580A1 (en) * | 2000-05-08 | 2001-11-20 | Brigham Young University | Friction stir welding using a superabrasive tool |
US6518172B1 (en) | 2000-08-29 | 2003-02-11 | Micron Technology, Inc. | Method for applying uniform pressurized film across wafer |
DE10062108B4 (de) * | 2000-12-13 | 2010-04-15 | Infineon Technologies Ag | Leistungsmodul mit verbessertem transienten Wärmewiderstand |
DE10140826B4 (de) * | 2000-12-13 | 2005-11-10 | Infineon Technologies Ag | Verfahren zur mehrschrittigen Bearbeitung eines dünnen und unter den Bearbeitungsschritten bruchgefährdeten Halbleiter-Waferprodukts |
US20050277244A1 (en) * | 2002-07-23 | 2005-12-15 | Norbert Galster | Method for fastening microtool components to objects |
DE10334391B4 (de) * | 2003-07-28 | 2005-10-06 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Erzeugung von Verbindungen in der Mikroelektronik |
US20050098613A1 (en) * | 2003-11-07 | 2005-05-12 | Barker William W. | Method for diffusion bond welding for use in a multilayer electronic assembly |
US8257795B2 (en) * | 2004-02-18 | 2012-09-04 | Virginia Tech Intellectual Properties, Inc. | Nanoscale metal paste for interconnect and method of use |
DE102004056702B3 (de) * | 2004-04-22 | 2006-03-02 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Befestigung von elektronischen Bauelementen auf einem Substrat |
DE102004019567B3 (de) * | 2004-04-22 | 2006-01-12 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Befestigung von elektronischen Bauelementen auf einem Substrat |
EP1783829A1 (en) | 2005-11-02 | 2007-05-09 | Abb Research Ltd. | Method for bonding electronic components |
DE102005058794A1 (de) * | 2005-12-09 | 2007-06-14 | Semikron Elektronik Gmbh & Co. Kg | Vorrichtung und getaktetes Verfahren zur Drucksinterverbindung |
DE102006014145C5 (de) * | 2006-03-28 | 2015-12-17 | Semikron Elektronik Gmbh & Co. Kg | Druck kontaktierte Anordnung mit einem Leistungsbauelement, einem Metallformkörper und einer Verbindungseinrichtung |
DE102006031844B4 (de) * | 2006-07-07 | 2013-04-11 | Technische Universität Braunschweig Carolo-Wilhelmina | Verfahren zur Befestigung von elektronischen Bauelementen auf einem Träger durch Drucksinterung und somit hergestellte Schaltungsanordnung |
DE102006033073B3 (de) * | 2006-07-14 | 2008-02-14 | Danfoss Silicon Power Gmbh | Verfahren zur Schaffung einer hitze- und stoßfesten Verbindung des Baugruppen-Halbleiters und zur Drucksinterung vorbereiteter Halbleiterbaustein |
US9214442B2 (en) | 2007-03-19 | 2015-12-15 | Infineon Technologies Ag | Power semiconductor module, method for producing a power semiconductor module, and semiconductor chip |
FR2915622B1 (fr) * | 2007-04-30 | 2009-07-31 | Valeo Electronique Sys Liaison | Procde d'assemblage d'un organe sur un support par frittage d'une masse de poudre conductrice |
DE102007022336A1 (de) * | 2007-05-12 | 2008-11-20 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitersubstrat mit Metallkontaktschicht sowie Herstellungsverfahren hierzu |
DE102007022337A1 (de) * | 2007-05-12 | 2008-11-20 | Semikron Elektronik Gmbh & Co. Kg | Gesintertes Leistungshalbleitersubstrat sowie Herstellungsverfahren hierzu |
DE102007035324A1 (de) * | 2007-07-27 | 2009-01-29 | Robert Bosch Gmbh | Verfahren zum Befestigen von mindestens einem elektronischen Bauelement an einem Stator einer elektrischen Maschine |
DE102007063308A1 (de) | 2007-12-28 | 2009-07-02 | Robert Bosch Gmbh | Diode |
US8253233B2 (en) | 2008-02-14 | 2012-08-28 | Infineon Technologies Ag | Module including a sintered joint bonding a semiconductor chip to a copper surface |
US7682875B2 (en) | 2008-05-28 | 2010-03-23 | Infineon Technologies Ag | Method for fabricating a module including a sintered joint |
DE102008048869A1 (de) * | 2008-09-25 | 2010-04-22 | Infineon Technologies Ag | Vorrichtung und Verfahren zum Verbinden zweier Verbindungspartner |
DE102008055137A1 (de) | 2008-12-23 | 2010-07-01 | Robert Bosch Gmbh | Elektrisches oder elektronisches Verbundbauteil sowie Verfahren zum Herstellen eines elektrischen oder elektronischen Verbundbauteils |
DE102008055134A1 (de) * | 2008-12-23 | 2010-07-01 | Robert Bosch Gmbh | Elektrisches oder elektronisches Verbundbauteil sowie Verfahren zum Herstellen eines elektrischen oder elektronischen Verbundbauteils |
DE102009008926B4 (de) | 2009-02-13 | 2022-06-15 | Danfoss Silicon Power Gmbh | Verfahren zur Schaffung einer hochtemperatur- und temperaturwechselfesten Verbindung eines Halbleiterbausteins mit einem Verbindungspartner und einer Kontaktlasche unter Verwendung eines temperaturbeaufschlagenden Verfahrens |
DE102009017692B4 (de) | 2009-04-09 | 2020-08-27 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung einer Niedertemperaturkontaktierung für mikroelektronische Aufbauten |
DE102009020733B4 (de) * | 2009-05-11 | 2011-12-08 | Danfoss Silicon Power Gmbh | Verfahren zur Kontaktsinterung von bandförmigen Kontaktelementen |
DE102010001666A1 (de) | 2010-02-08 | 2011-08-11 | Robert Bosch GmbH, 70469 | Elektrisches oder elektronisches Verbundbauteil |
DE102010021765B4 (de) * | 2010-05-27 | 2014-06-12 | Semikron Elektronik Gmbh & Co. Kg | Herstellungsverfahren zur Anordnung zweier Verbindungspartner mittels einer Niedertemperatur Drucksinterverbindung |
DE102010021764B4 (de) * | 2010-05-27 | 2014-09-25 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Niedertemperatur Drucksinterverbindung zweier Verbindungspartner |
DE102010044329A1 (de) | 2010-09-03 | 2012-03-08 | Heraeus Materials Technology Gmbh & Co. Kg | Kontaktierungsmittel und Verfahren zur Kontaktierung elektrischer Bauteile |
US8587116B2 (en) | 2010-09-30 | 2013-11-19 | Infineon Technologies Ag | Semiconductor module comprising an insert |
WO2012061511A2 (en) * | 2010-11-03 | 2012-05-10 | Fry's Metals, Inc. | Sintering materials and attachment methods using same |
DE102010063021A1 (de) * | 2010-12-14 | 2012-06-14 | Robert Bosch Gmbh | Elektronische Baugruppe mit verbesserter Sinterverbindung |
US8999758B2 (en) | 2011-08-12 | 2015-04-07 | Infineon Technologies Ag | Fixing semiconductor die in dry and pressure supported assembly processes |
EP2560468A1 (en) | 2011-08-19 | 2013-02-20 | ABB Research Ltd. | Method of connecting elements of a plurality of elements to one another |
DE102011083926A1 (de) | 2011-09-30 | 2013-04-04 | Robert Bosch Gmbh | Schichtverbund aus einer Trägerfolie und einer Schichtanordnung umfassend eine sinterbare Schicht aus mindestens einem Metallpulver und eine Lotschicht |
WO2013185839A1 (de) * | 2012-06-15 | 2013-12-19 | Osram Opto Semiconductors Gmbh | Verfahren zur herstellung eines optoelektronischen halbleiterbauelements mit einer unter einwirkung von wärme, druck und ultraschall versinterten verbindungsschicht |
DE102012107570B4 (de) * | 2012-08-17 | 2017-08-03 | Rogers Germany Gmbh | Verfahren zur Herstellung von Hohlkörpern, insbesondere von Kühlern, Hohlkörper sowie Kühler enthaltende elektrische oder elektronische Baugruppen |
DE102013101124B4 (de) | 2013-02-05 | 2020-12-03 | Seho Systemtechnik Gmbh | Vorrichtung und Verfahren zum Sintern eines Sinterproduktes |
DE102014103013B4 (de) * | 2014-03-06 | 2017-09-21 | Infineon Technologies Ag | Verfahren zum Erzeugen einer getrockneten Pastenschicht, Verfahren zum Erzeugen einer Sinterverbindung und Durchlaufanlage zur Durchführung der Verfahren |
DE102014105000B4 (de) * | 2014-04-08 | 2021-02-25 | Infineon Technologies Ag | Verfahren zur Herstellung und zum Bestücken eines Schaltungsträgers |
RU2564518C1 (ru) * | 2014-07-01 | 2015-10-10 | Федеральное государственное унитарное предприятие "Всероссийский научно-исследовательский институт авиационных материалов" (ФГУП "ВИАМ") | Способ сушки покрытия из серебросодержащей пасты |
DE102015114314A1 (de) | 2015-08-28 | 2017-03-02 | Innovative Sensor Technology Ist Ag | Verfahren zur Herstellung eines Temperatursensors |
EP3208841B1 (de) * | 2016-02-19 | 2020-12-09 | Heraeus Deutschland GmbH & Co. KG | Verfahren zur herstellung einer wärmespreizplatte, wärmespreizplatte, verfahren zur herstellung eines halbleitermoduls und halbleitermodul |
DE102016108000B3 (de) * | 2016-04-29 | 2016-12-15 | Danfoss Silicon Power Gmbh | Verfahren zum stoffschlüssigen Verbinden einer ersten Komponente eines Leistungshalbleitermoduls mit einer zweiten Komponente eines Leistungshalbleitermoduls |
DE102018112023A1 (de) * | 2018-05-18 | 2019-11-21 | Endress + Hauser Wetzer Gmbh + Co. Kg | Verfahren zur Herstellung eines Thermometers |
DE102018133090A1 (de) * | 2018-12-20 | 2020-06-25 | Danfoss Silicon Power Gmbh | Anordnung zum Sintern einer elektronischen Baugruppe |
FR3095142B1 (fr) | 2019-04-18 | 2023-08-25 | Isp System | Procédé et dispositif de fabrication de préformes destinées à la brasure de composants électroniques, photoniques, thermiques ou mécaniques. |
EP3792962A1 (en) | 2019-09-12 | 2021-03-17 | Infineon Technologies AG | Method for monitoring a process of forming a sinterable connection layer by photometric measurements |
DE102019134595A1 (de) * | 2019-12-16 | 2021-06-17 | Endress+Hauser SE+Co. KG | Fügen von zwei Bauteilen eines Feldgeräts der Prozess- und Automatisierungstechnik |
US20230343745A1 (en) | 2020-06-23 | 2023-10-26 | Siemens Aktiengesellschaft | Method for contacting a power semiconductor on a substrate |
US12048971B2 (en) | 2020-12-04 | 2024-07-30 | Isp System | Manufacturing process and device for preforms intended for brazing electronic, photonic, thermal or mechanical components |
US20220230989A1 (en) * | 2021-01-18 | 2022-07-21 | Nitto Denko Corporation | Semiconductor device and method for producing semiconductor device |
DE102022133386A1 (de) | 2022-12-15 | 2024-06-20 | Pac Tech - Packaging Technologies Gmbh | Verfahren zur Herstellung einer Lötkontaktfläche auf einem Chip durch Erzeugung einer Sinterpastenschnittstelle |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2390452A (en) * | 1942-11-26 | 1945-12-04 | Int Nickel Co | Method of producing composite metal stock |
US3479731A (en) * | 1967-06-13 | 1969-11-25 | Gen Motors Corp | Brazing method |
US3716347A (en) * | 1970-09-21 | 1973-02-13 | Minnesota Mining & Mfg | Metal parts joined with sintered powdered metal |
GB2067117B (en) * | 1980-01-02 | 1983-07-06 | Secr Defence | Bonding semi-conductor bodies to aluminium thick-film circuits |
JPS5731148A (en) * | 1980-07-31 | 1982-02-19 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5811245U (ja) * | 1981-07-15 | 1983-01-25 | 日本電気株式会社 | 半導体装置 |
JPS58112335A (ja) * | 1981-12-26 | 1983-07-04 | Nitto Electric Ind Co Ltd | 半導体素子固定用接着フイルム |
SE430481B (sv) * | 1982-03-29 | 1983-11-21 | Asea Ab | Sett att sammanfoga delar av solitt material genom varm isostatisk pressning |
JPS5952854A (ja) * | 1982-09-20 | 1984-03-27 | Hitachi Ltd | 絶縁型半導体装置の製法 |
JPS59181628A (ja) * | 1983-03-31 | 1984-10-16 | Toshiba Corp | 半導体素子の固着方法 |
US4574329A (en) * | 1983-10-07 | 1986-03-04 | U.S. Philips Corporation | Multilayer ceramic capacitor |
DE3414065A1 (de) * | 1984-04-13 | 1985-12-12 | Siemens AG, 1000 Berlin und 8000 München | Anordnung bestehend aus mindestens einem auf einem substrat befestigten elektronischen bauelement und verfahren zur herstellung einer derartigen anordnung |
-
1987
- 1987-03-10 IN IN195/CAL/87A patent/IN168174B/en unknown
- 1987-03-25 DE DE8787104440T patent/DE3770683D1/de not_active Expired - Lifetime
- 1987-03-25 US US07/029,819 patent/US4810672A/en not_active Expired - Lifetime
- 1987-03-25 EP EP19870104440 patent/EP0242626B1/de not_active Expired - Lifetime
- 1987-04-17 JP JP9611787A patent/JP2515708B2/ja not_active Expired - Lifetime
- 1987-04-21 BR BR8701876A patent/BR8701876A/pt unknown
Also Published As
Publication number | Publication date |
---|---|
BR8701876A (pt) | 1988-01-26 |
US4810672A (en) | 1989-03-07 |
DE3770683D1 (de) | 1991-07-18 |
JPS62254439A (ja) | 1987-11-06 |
EP0242626A3 (en) | 1989-01-25 |
JP2515708B2 (ja) | 1996-07-10 |
EP0242626A2 (de) | 1987-10-28 |
EP0242626B1 (de) | 1991-06-12 |