IN157462B - - Google Patents

Info

Publication number
IN157462B
IN157462B IN1123/CAL/82A IN1123CA1982A IN157462B IN 157462 B IN157462 B IN 157462B IN 1123CA1982 A IN1123CA1982 A IN 1123CA1982A IN 157462 B IN157462 B IN 157462B
Authority
IN
India
Application number
IN1123/CAL/82A
Other languages
English (en)
Inventor
Vincent D Cannella
Masatsugu Izu
Stephen J Hudgens
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23184044&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IN157462(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of IN157462B publication Critical patent/IN157462B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemically Coating (AREA)
  • Manufacturing Of Printed Wiring (AREA)
IN1123/CAL/82A 1981-09-28 1982-09-27 IN157462B (cg-RX-API-DMAC7.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/306,146 US4438723A (en) 1981-09-28 1981-09-28 Multiple chamber deposition and isolation system and method

Publications (1)

Publication Number Publication Date
IN157462B true IN157462B (cg-RX-API-DMAC7.html) 1986-04-05

Family

ID=23184044

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1123/CAL/82A IN157462B (cg-RX-API-DMAC7.html) 1981-09-28 1982-09-27

Country Status (16)

Country Link
US (1) US4438723A (cg-RX-API-DMAC7.html)
EP (1) EP0076426B1 (cg-RX-API-DMAC7.html)
JP (1) JPS5870524A (cg-RX-API-DMAC7.html)
KR (1) KR900007042B1 (cg-RX-API-DMAC7.html)
AT (1) ATE23883T1 (cg-RX-API-DMAC7.html)
AU (1) AU552270B2 (cg-RX-API-DMAC7.html)
BR (1) BR8205600A (cg-RX-API-DMAC7.html)
CA (1) CA1186280A (cg-RX-API-DMAC7.html)
DE (1) DE3274470D1 (cg-RX-API-DMAC7.html)
ES (2) ES516034A0 (cg-RX-API-DMAC7.html)
IE (1) IE53843B1 (cg-RX-API-DMAC7.html)
IL (1) IL66784A (cg-RX-API-DMAC7.html)
IN (1) IN157462B (cg-RX-API-DMAC7.html)
PH (1) PH18998A (cg-RX-API-DMAC7.html)
PT (1) PT75612B (cg-RX-API-DMAC7.html)
ZA (1) ZA826615B (cg-RX-API-DMAC7.html)

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5187115A (en) * 1977-12-05 1993-02-16 Plasma Physics Corp. Method of forming semiconducting materials and barriers using a dual enclosure apparatus
US4492181A (en) * 1982-03-19 1985-01-08 Sovonics Solar Systems Apparatus for continuously producing tandem amorphous photovoltaic cells
US4485125A (en) * 1982-03-19 1984-11-27 Energy Conversion Devices, Inc. Method for continuously producing tandem amorphous photovoltaic cells
US4515107A (en) * 1982-11-12 1985-05-07 Sovonics Solar Systems Apparatus for the manufacture of photovoltaic devices
JPS60119784A (ja) * 1983-12-01 1985-06-27 Kanegafuchi Chem Ind Co Ltd 絶縁金属基板の製法およびそれに用いる装置
JPS59201412A (ja) * 1983-04-30 1984-11-15 Agency Of Ind Science & Technol 非晶質半導体素子製造装置
JPS59214221A (ja) * 1983-05-20 1984-12-04 Sanyo Electric Co Ltd アモルフアス半導体の製造方法
JPS59219928A (ja) * 1983-05-27 1984-12-11 Fuji Electric Corp Res & Dev Ltd プラズマｃｖｄ装置
JPS60110176A (ja) * 1983-11-21 1985-06-15 Agency Of Ind Science & Technol 太陽電池製造装置
JPS60149119A (ja) * 1984-01-13 1985-08-06 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
EP0150798B1 (en) 1984-01-23 1989-05-31 Energy Conversion Devices, Inc. Liquid crystal displays operated by amorphous silicon alloy diodes
US6784033B1 (en) 1984-02-15 2004-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for the manufacture of an insulated gate field effect semiconductor device
US5780313A (en) 1985-02-14 1998-07-14 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
AU584607B2 (en) * 1984-02-17 1989-06-01 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Film forming method and apparatus
US4514437A (en) * 1984-05-02 1985-04-30 Energy Conversion Devices, Inc. Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition
DE3427057A1 (de) * 1984-07-23 1986-01-23 Standard Elektrik Lorenz Ag, 7000 Stuttgart Anlage zum herstellen von halbleiter-schichtstrukturen durch epitaktisches wachstum
US4749588A (en) * 1984-09-07 1988-06-07 Nobuhiro Fukuda Process for producing hydrogenated amorphous silicon thin film and a solar cell
JPS6179755A (ja) * 1984-09-28 1986-04-23 Nisshin Steel Co Ltd 溶融めつき真空蒸着めつき兼用の連続めつき装置
JPH0697649B2 (ja) * 1984-11-27 1994-11-30 松下電器産業株式会社 非晶質膜半導体の製造法
US4697041A (en) * 1985-02-15 1987-09-29 Teijin Limited Integrated solar cells
EP0210578B1 (en) * 1985-07-29 1992-05-20 Energy Conversion Devices, Inc. System and method for depositing an electrical insulator in a continuous process
US6673722B1 (en) 1985-10-14 2004-01-06 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US6230650B1 (en) 1985-10-14 2001-05-15 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US5366554A (en) * 1986-01-14 1994-11-22 Canon Kabushiki Kaisha Device for forming a deposited film
US4803947A (en) * 1986-01-15 1989-02-14 Canon Kabushiki Kaisha Apparatus for forming deposited film
JPS62271418A (ja) * 1986-05-20 1987-11-25 Matsushita Electric Ind Co Ltd 非晶質シリコン半導体素子の製造方法
US4874631A (en) * 1986-06-23 1989-10-17 Minnesota Mining And Manufacturing Company Multi-chamber deposition system
IL82673A0 (en) * 1986-06-23 1987-11-30 Minnesota Mining & Mfg Multi-chamber depositions system
US4841908A (en) * 1986-06-23 1989-06-27 Minnesota Mining And Manufacturing Company Multi-chamber deposition system
GB2195663B (en) * 1986-08-15 1990-08-22 Nippon Telegraph & Telephone Chemical vapour deposition method and apparatus therefor
US4920917A (en) * 1987-03-18 1990-05-01 Teijin Limited Reactor for depositing a layer on a moving substrate
JPS63262472A (ja) * 1987-04-20 1988-10-28 Sanyo Electric Co Ltd 膜形成方法
US5155565A (en) * 1988-02-05 1992-10-13 Minnesota Mining And Manufacturing Company Method for manufacturing an amorphous silicon thin film solar cell and Schottky diode on a common substrate
US4862827A (en) * 1988-06-28 1989-09-05 Wacker-Chemie Gmbh Apparatus for coating semiconductor components on a dielectric film
US5053625A (en) * 1988-08-04 1991-10-01 Minnesota Mining And Manufacturing Company Surface characterization apparatus and method
US5001939A (en) * 1988-08-04 1991-03-26 Minnesota Mining And Manufacturing Co. Surface characterization apparatus and method
US5071670A (en) * 1990-06-11 1991-12-10 Kelly Michael A Method for chemical vapor deposition under a single reactor vessel divided into separate reaction chambers each with its own depositing and exhausting means
US5281541A (en) * 1990-09-07 1994-01-25 Canon Kabushiki Kaisha Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method
TW237562B (cg-RX-API-DMAC7.html) * 1990-11-09 1995-01-01 Semiconductor Energy Res Co Ltd
JP2824808B2 (ja) * 1990-11-16 1998-11-18 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による大面積の機能性堆積膜を連続的に形成する装置
US5629054A (en) * 1990-11-20 1997-05-13 Canon Kabushiki Kaisha Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method
JP2810532B2 (ja) * 1990-11-29 1998-10-15 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
US6979840B1 (en) 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
US5919310A (en) * 1991-10-07 1999-07-06 Canon Kabushiki Kaisha Continuously film-forming apparatus provided with improved gas gate means
JP3073327B2 (ja) * 1992-06-30 2000-08-07 キヤノン株式会社 堆積膜形成方法
DE4324320B4 (de) * 1992-07-24 2006-08-31 Fuji Electric Co., Ltd., Kawasaki Verfahren und Vorrichtung zur Herstellung einer als dünne Schicht ausgebildeten fotovoltaischen Umwandlungsvorrichtung
US5946587A (en) * 1992-08-06 1999-08-31 Canon Kabushiki Kaisha Continuous forming method for functional deposited films
US6835523B1 (en) * 1993-05-09 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Apparatus for fabricating coating and method of fabricating the coating
US6183816B1 (en) 1993-07-20 2001-02-06 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating the coating
US5432073A (en) * 1993-09-27 1995-07-11 United Microelectronics Corporation Method for metal deposition without poison via
US5563095A (en) * 1994-12-01 1996-10-08 Frey; Jeffrey Method for manufacturing semiconductor devices
US6096389A (en) * 1995-09-14 2000-08-01 Canon Kabushiki Kaisha Method and apparatus for forming a deposited film using a microwave CVD process
US5997588A (en) * 1995-10-13 1999-12-07 Advanced Semiconductor Materials America, Inc. Semiconductor processing system with gas curtain
TW303480B (en) 1996-01-24 1997-04-21 Applied Materials Inc Magnetically confined plasma reactor for processing a semiconductor wafer
US6153013A (en) * 1996-02-16 2000-11-28 Canon Kabushiki Kaisha Deposited-film-forming apparatus
US5743966A (en) * 1996-05-31 1998-04-28 The Boc Group, Inc. Unwinding of plastic film in the presence of a plasma
US5920078A (en) * 1996-06-20 1999-07-06 Frey; Jeffrey Optoelectronic device using indirect-bandgap semiconductor material
US6159763A (en) * 1996-09-12 2000-12-12 Canon Kabushiki Kaisha Method and device for forming semiconductor thin film, and method and device for forming photovoltaic element
AU3965499A (en) * 1998-07-10 2000-02-01 Silicon Valley Group Thermal Systems, Llc Chemical vapor deposition apparatus employing linear injectors for delivering gaseous chemicals and method
US6863835B1 (en) 2000-04-25 2005-03-08 James D. Carducci Magnetic barrier for plasma in chamber exhaust
JP2003133230A (ja) * 2001-10-29 2003-05-09 Mitsubishi Heavy Ind Ltd フレキシブル基板の半導体処理装置
DE10163394A1 (de) * 2001-12-21 2003-07-03 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden kristalliner Schichten und auf kristallinen Substraten
EP1347077B1 (en) * 2002-03-15 2006-05-17 VHF Technologies SA Apparatus and method for the production of flexible semiconductor devices
DE102005013537A1 (de) * 2004-03-24 2005-10-20 Sharp Kk Fotoelektrischer Wandler und Herstellverfahren für einen solchen
US7368368B2 (en) * 2004-08-18 2008-05-06 Cree, Inc. Multi-chamber MOCVD growth apparatus for high performance/high throughput
CN101410547A (zh) * 2004-11-10 2009-04-15 德斯塔尔科技公司 用于形成薄膜太阳能电池的基于托盘的系统
US20060096536A1 (en) * 2004-11-10 2006-05-11 Daystar Technologies, Inc. Pressure control system in a photovoltaic substrate deposition apparatus
US20090050058A1 (en) * 2006-10-12 2009-02-26 Ovshinsky Stanford R Programmed high speed deposition of amorphous, nanocrystalline, microcrystalline, or polycrystalline materials having low intrinsic defect density
US20080090022A1 (en) * 2006-10-12 2008-04-17 Energy Conversion Devices, Inc. High rate, continuous deposition of high quality amorphous, nanocrystalline, microcrystalline or polycrystalline materials
US20090031951A1 (en) * 2006-10-12 2009-02-05 Ovshinsky Stanford R Programmed high speed deposition of amorphous, nanocrystalline, microcrystalline, or polycrystalline materials having low intrinsic defect density
EP2174068A1 (de) * 2007-06-25 2010-04-14 Posnansky, André Dachaufbau für ein solarsystem
CN106277816B (zh) * 2016-07-29 2019-08-23 爱发科豪威光电薄膜科技(深圳)有限公司 镀膜生产线多级气氛隔离装置
CN120247032B (zh) * 2025-04-24 2025-10-17 北京化工大学 一种以SiF4为原料制备硅负极材料的方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3294670A (en) * 1963-10-07 1966-12-27 Western Electric Co Apparatus for processing materials in a controlled atmosphere
US3530057A (en) * 1967-05-29 1970-09-22 Nat Res Corp Sputtering
FR1583684A (cg-RX-API-DMAC7.html) * 1968-01-31 1969-11-28
US3805736A (en) * 1971-12-27 1974-04-23 Ibm Apparatus for diffusion limited mass transport
US4015558A (en) * 1972-12-04 1977-04-05 Optical Coating Laboratory, Inc. Vapor deposition apparatus
FR2307202A1 (fr) * 1975-04-07 1976-11-05 Sogeme Dispositif d'etancheite separant deux enceintes entre lesquelles circule un materiau en continu
DE2638269C2 (de) * 1976-08-25 1983-05-26 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung von substratgebundenem, großflächigem Silicium
JPS5578524A (en) * 1978-12-10 1980-06-13 Shunpei Yamazaki Manufacture of semiconductor device
US4274936A (en) * 1979-04-30 1981-06-23 Advanced Coating Technology, Inc. Vacuum deposition system and method
JPS5934421B2 (ja) * 1979-11-29 1984-08-22 住友電気工業株式会社 薄膜製造法

Also Published As

Publication number Publication date
ES522825A0 (es) 1984-09-16
AU8813682A (en) 1983-04-14
ZA826615B (en) 1983-08-31
EP0076426A2 (en) 1983-04-13
EP0076426A3 (en) 1984-07-25
ES8400635A1 (es) 1983-10-16
ATE23883T1 (de) 1986-12-15
PT75612B (en) 1984-10-29
IL66784A (en) 1985-09-29
IE822164L (en) 1983-03-28
IE53843B1 (en) 1989-03-15
AU552270B2 (en) 1986-05-29
PT75612A (en) 1982-10-01
ES8407626A1 (es) 1984-09-16
DE3274470D1 (en) 1987-01-15
US4438723A (en) 1984-03-27
KR900007042B1 (ko) 1990-09-27
PH18998A (en) 1985-12-03
IL66784A0 (en) 1982-12-31
ES516034A0 (es) 1983-10-16
EP0076426B1 (en) 1986-11-26
BR8205600A (pt) 1983-08-30
JPS5870524A (ja) 1983-04-27
CA1186280A (en) 1985-04-30
JPH0338731B2 (cg-RX-API-DMAC7.html) 1991-06-11

Similar Documents

Publication Publication Date Title
FR2501305B1 (cg-RX-API-DMAC7.html)
IN157462B (cg-RX-API-DMAC7.html)
FR2498717B1 (cg-RX-API-DMAC7.html)
DE3249824A1 (cg-RX-API-DMAC7.html)
CH655571B (cg-RX-API-DMAC7.html)
FR2497634B1 (cg-RX-API-DMAC7.html)
FR2499483B1 (cg-RX-API-DMAC7.html)
FR2498636B1 (cg-RX-API-DMAC7.html)
FR2514754B1 (cg-RX-API-DMAC7.html)
FR2499363B1 (cg-RX-API-DMAC7.html)
FR2502169B3 (cg-RX-API-DMAC7.html)
FR2498817B1 (cg-RX-API-DMAC7.html)
FR2499595B1 (cg-RX-API-DMAC7.html)
FR2501135B3 (cg-RX-API-DMAC7.html)
FR2501057B1 (cg-RX-API-DMAC7.html)
FR2502468B3 (cg-RX-API-DMAC7.html)
FR2502456B1 (cg-RX-API-DMAC7.html)
FR2499313B1 (cg-RX-API-DMAC7.html)
FR2502234B1 (cg-RX-API-DMAC7.html)
FR2501051B3 (cg-RX-API-DMAC7.html)
CH655612B (cg-RX-API-DMAC7.html)
FR2501311B3 (cg-RX-API-DMAC7.html)
FR2499177B1 (cg-RX-API-DMAC7.html)
FR2501278B1 (cg-RX-API-DMAC7.html)
FR2499507B3 (cg-RX-API-DMAC7.html)