IN157462B - - Google Patents

Info

Publication number
IN157462B
IN157462B IN1123/CAL/82A IN1123CA1982A IN157462B IN 157462 B IN157462 B IN 157462B IN 1123CA1982 A IN1123CA1982 A IN 1123CA1982A IN 157462 B IN157462 B IN 157462B
Authority
IN
India
Application number
IN1123/CAL/82A
Other languages
English (en)
Inventor
Vincent D Cannella
Masatsugu Izu
Stephen J Hudgens
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23184044&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IN157462(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of IN157462B publication Critical patent/IN157462B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Chemically Coating (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IN1123/CAL/82A 1981-09-28 1982-09-27 IN157462B (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/306,146 US4438723A (en) 1981-09-28 1981-09-28 Multiple chamber deposition and isolation system and method

Publications (1)

Publication Number Publication Date
IN157462B true IN157462B (OSRAM) 1986-04-05

Family

ID=23184044

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1123/CAL/82A IN157462B (OSRAM) 1981-09-28 1982-09-27

Country Status (16)

Country Link
US (1) US4438723A (OSRAM)
EP (1) EP0076426B1 (OSRAM)
JP (1) JPS5870524A (OSRAM)
KR (1) KR900007042B1 (OSRAM)
AT (1) ATE23883T1 (OSRAM)
AU (1) AU552270B2 (OSRAM)
BR (1) BR8205600A (OSRAM)
CA (1) CA1186280A (OSRAM)
DE (1) DE3274470D1 (OSRAM)
ES (2) ES8400635A1 (OSRAM)
IE (1) IE53843B1 (OSRAM)
IL (1) IL66784A (OSRAM)
IN (1) IN157462B (OSRAM)
PH (1) PH18998A (OSRAM)
PT (1) PT75612B (OSRAM)
ZA (1) ZA826615B (OSRAM)

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AU584607B2 (en) * 1984-02-17 1989-06-01 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Film forming method and apparatus
US4514437A (en) * 1984-05-02 1985-04-30 Energy Conversion Devices, Inc. Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition
DE3427057A1 (de) * 1984-07-23 1986-01-23 Standard Elektrik Lorenz Ag, 7000 Stuttgart Anlage zum herstellen von halbleiter-schichtstrukturen durch epitaktisches wachstum
US4749588A (en) * 1984-09-07 1988-06-07 Nobuhiro Fukuda Process for producing hydrogenated amorphous silicon thin film and a solar cell
JPS6179755A (ja) * 1984-09-28 1986-04-23 Nisshin Steel Co Ltd 溶融めつき真空蒸着めつき兼用の連続めつき装置
JPH0697649B2 (ja) * 1984-11-27 1994-11-30 松下電器産業株式会社 非晶質膜半導体の製造法
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US5053625A (en) * 1988-08-04 1991-10-01 Minnesota Mining And Manufacturing Company Surface characterization apparatus and method
US5001939A (en) * 1988-08-04 1991-03-26 Minnesota Mining And Manufacturing Co. Surface characterization apparatus and method
US5071670A (en) * 1990-06-11 1991-12-10 Kelly Michael A Method for chemical vapor deposition under a single reactor vessel divided into separate reaction chambers each with its own depositing and exhausting means
US5281541A (en) * 1990-09-07 1994-01-25 Canon Kabushiki Kaisha Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method
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JP2824808B2 (ja) * 1990-11-16 1998-11-18 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による大面積の機能性堆積膜を連続的に形成する装置
US5629054A (en) * 1990-11-20 1997-05-13 Canon Kabushiki Kaisha Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method
JP2810532B2 (ja) * 1990-11-29 1998-10-15 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
US6979840B1 (en) * 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
US5919310A (en) * 1991-10-07 1999-07-06 Canon Kabushiki Kaisha Continuously film-forming apparatus provided with improved gas gate means
JP3073327B2 (ja) * 1992-06-30 2000-08-07 キヤノン株式会社 堆積膜形成方法
DE4324320B4 (de) * 1992-07-24 2006-08-31 Fuji Electric Co., Ltd., Kawasaki Verfahren und Vorrichtung zur Herstellung einer als dünne Schicht ausgebildeten fotovoltaischen Umwandlungsvorrichtung
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US6096389A (en) * 1995-09-14 2000-08-01 Canon Kabushiki Kaisha Method and apparatus for forming a deposited film using a microwave CVD process
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WO2000003060A1 (en) * 1998-07-10 2000-01-20 Silicon Valley Group Thermal Systems, Llc Chemical vapor deposition apparatus employing linear injectors for delivering gaseous chemicals and method
US6863835B1 (en) 2000-04-25 2005-03-08 James D. Carducci Magnetic barrier for plasma in chamber exhaust
JP2003133230A (ja) * 2001-10-29 2003-05-09 Mitsubishi Heavy Ind Ltd フレキシブル基板の半導体処理装置
DE10163394A1 (de) * 2001-12-21 2003-07-03 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden kristalliner Schichten und auf kristallinen Substraten
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DE102005013537A1 (de) * 2004-03-24 2005-10-20 Sharp Kk Fotoelektrischer Wandler und Herstellverfahren für einen solchen
US7368368B2 (en) * 2004-08-18 2008-05-06 Cree, Inc. Multi-chamber MOCVD growth apparatus for high performance/high throughput
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US20090050058A1 (en) * 2006-10-12 2009-02-26 Ovshinsky Stanford R Programmed high speed deposition of amorphous, nanocrystalline, microcrystalline, or polycrystalline materials having low intrinsic defect density
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US20090031951A1 (en) * 2006-10-12 2009-02-05 Ovshinsky Stanford R Programmed high speed deposition of amorphous, nanocrystalline, microcrystalline, or polycrystalline materials having low intrinsic defect density
US20110041428A1 (en) * 2007-06-25 2011-02-24 Mario Posnansky Roof structure for a solar system
CN106277816B (zh) * 2016-07-29 2019-08-23 爱发科豪威光电薄膜科技(深圳)有限公司 镀膜生产线多级气氛隔离装置
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Also Published As

Publication number Publication date
IL66784A0 (en) 1982-12-31
ZA826615B (en) 1983-08-31
EP0076426A3 (en) 1984-07-25
ES522825A0 (es) 1984-09-16
EP0076426B1 (en) 1986-11-26
EP0076426A2 (en) 1983-04-13
ES8407626A1 (es) 1984-09-16
JPH0338731B2 (OSRAM) 1991-06-11
CA1186280A (en) 1985-04-30
ES516034A0 (es) 1983-10-16
AU552270B2 (en) 1986-05-29
US4438723A (en) 1984-03-27
JPS5870524A (ja) 1983-04-27
IE53843B1 (en) 1989-03-15
KR900007042B1 (ko) 1990-09-27
IL66784A (en) 1985-09-29
PT75612A (en) 1982-10-01
BR8205600A (pt) 1983-08-30
DE3274470D1 (en) 1987-01-15
ES8400635A1 (es) 1983-10-16
ATE23883T1 (de) 1986-12-15
AU8813682A (en) 1983-04-14
PH18998A (en) 1985-12-03
IE822164L (en) 1983-03-28
PT75612B (en) 1984-10-29

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