IL257487B - התקן אחסון מוליכים למחצה לא נדיפים - Google Patents

התקן אחסון מוליכים למחצה לא נדיפים

Info

Publication number
IL257487B
IL257487B IL257487A IL25748718A IL257487B IL 257487 B IL257487 B IL 257487B IL 257487 A IL257487 A IL 257487A IL 25748718 A IL25748718 A IL 25748718A IL 257487 B IL257487 B IL 257487B
Authority
IL
Israel
Prior art keywords
storage device
semiconductor storage
volatile semiconductor
volatile
storage
Prior art date
Application number
IL257487A
Other languages
English (en)
Other versions
IL257487A (he
Inventor
Yutaka Shinagawa
Yasuhiro Taniguchi
Hideo Kasai
Ryotaro Sakurai
Yasuhiko Kawashima
Kosuke Okuyama
Fukuo Owada
Shinji Yoshida
Original Assignee
Floadia Corp
Yutaka Shinagawa
Yasuhiro Taniguchi
Hideo Kasai
Ryotaro Sakurai
Yasuhiko Kawashima
Kosuke Okuyama
Fukuo Owada
Shinji Yoshida
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Floadia Corp, Yutaka Shinagawa, Yasuhiro Taniguchi, Hideo Kasai, Ryotaro Sakurai, Yasuhiko Kawashima, Kosuke Okuyama, Fukuo Owada, Shinji Yoshida filed Critical Floadia Corp
Publication of IL257487A publication Critical patent/IL257487A/he
Publication of IL257487B publication Critical patent/IL257487B/he

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
IL257487A 2015-10-28 2018-02-12 התקן אחסון מוליכים למחצה לא נדיפים IL257487B (he)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015211619A JP5951097B1 (ja) 2015-10-28 2015-10-28 不揮発性半導体記憶装置
PCT/JP2016/080721 WO2017073394A1 (ja) 2015-10-28 2016-10-17 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
IL257487A IL257487A (he) 2018-04-30
IL257487B true IL257487B (he) 2020-03-31

Family

ID=56375210

Family Applications (1)

Application Number Title Priority Date Filing Date
IL257487A IL257487B (he) 2015-10-28 2018-02-12 התקן אחסון מוליכים למחצה לא נדיפים

Country Status (7)

Country Link
JP (1) JP5951097B1 (he)
KR (1) KR102437354B1 (he)
CN (1) CN108352386B (he)
IL (1) IL257487B (he)
SG (1) SG11201801236RA (he)
TW (1) TWI608597B (he)
WO (1) WO2017073394A1 (he)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3450467B2 (ja) * 1993-12-27 2003-09-22 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
JP4058232B2 (ja) * 2000-11-29 2008-03-05 株式会社ルネサステクノロジ 半導体装置及びｉｃカード
JP2005142354A (ja) * 2003-11-06 2005-06-02 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置及びその駆動方法及びその製造方法
CN102203922A (zh) * 2009-01-20 2011-09-28 夏普株式会社 薄膜二极管及其制造方法
JP2011129816A (ja) 2009-12-21 2011-06-30 Renesas Electronics Corp 半導体装置
JP5908803B2 (ja) * 2012-06-29 2016-04-26 株式会社フローディア 不揮発性半導体記憶装置
US9553207B2 (en) * 2013-09-25 2017-01-24 Synopsys, Inc. NVM device using FN tunneling with parallel powered source and drain

Also Published As

Publication number Publication date
KR20180077101A (ko) 2018-07-06
TW201727877A (zh) 2017-08-01
KR102437354B1 (ko) 2022-08-30
IL257487A (he) 2018-04-30
TWI608597B (zh) 2017-12-11
JP2017084960A (ja) 2017-05-18
JP5951097B1 (ja) 2016-07-13
CN108352386B (zh) 2021-06-25
SG11201801236RA (en) 2018-03-28
WO2017073394A1 (ja) 2017-05-04
CN108352386A (zh) 2018-07-31

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Date Code Title Description
FF Patent granted
KB Patent renewed