IL257487B - Non-volatile semiconductor storage device - Google Patents
Non-volatile semiconductor storage deviceInfo
- Publication number
- IL257487B IL257487B IL257487A IL25748718A IL257487B IL 257487 B IL257487 B IL 257487B IL 257487 A IL257487 A IL 257487A IL 25748718 A IL25748718 A IL 25748718A IL 257487 B IL257487 B IL 257487B
- Authority
- IL
- Israel
- Prior art keywords
- storage device
- semiconductor storage
- volatile semiconductor
- volatile
- storage
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015211619A JP5951097B1 (en) | 2015-10-28 | 2015-10-28 | Nonvolatile semiconductor memory device |
PCT/JP2016/080721 WO2017073394A1 (en) | 2015-10-28 | 2016-10-17 | Non-volatile semiconductor storage device |
Publications (2)
Publication Number | Publication Date |
---|---|
IL257487A IL257487A (en) | 2018-04-30 |
IL257487B true IL257487B (en) | 2020-03-31 |
Family
ID=56375210
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL257487A IL257487B (en) | 2015-10-28 | 2018-02-12 | Non-volatile semiconductor storage device |
Country Status (7)
Country | Link |
---|---|
JP (1) | JP5951097B1 (en) |
KR (1) | KR102437354B1 (en) |
CN (1) | CN108352386B (en) |
IL (1) | IL257487B (en) |
SG (1) | SG11201801236RA (en) |
TW (1) | TWI608597B (en) |
WO (1) | WO2017073394A1 (en) |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3450467B2 (en) * | 1993-12-27 | 2003-09-22 | 株式会社東芝 | Nonvolatile semiconductor memory device and method of manufacturing the same |
JP4058232B2 (en) * | 2000-11-29 | 2008-03-05 | 株式会社ルネサステクノロジ | Semiconductor device and IC card |
JP2005142354A (en) * | 2003-11-06 | 2005-06-02 | Matsushita Electric Ind Co Ltd | Non-volatile semiconductor storage device, its driving method, and manufacturing method |
WO2010084534A1 (en) * | 2009-01-20 | 2010-07-29 | シャープ株式会社 | Thin film diode and method for manufacturing same |
JP2011129816A (en) * | 2009-12-21 | 2011-06-30 | Renesas Electronics Corp | Semiconductor device |
JP5908803B2 (en) * | 2012-06-29 | 2016-04-26 | 株式会社フローディア | Nonvolatile semiconductor memory device |
US9553207B2 (en) * | 2013-09-25 | 2017-01-24 | Synopsys, Inc. | NVM device using FN tunneling with parallel powered source and drain |
-
2015
- 2015-10-28 JP JP2015211619A patent/JP5951097B1/en active Active
-
2016
- 2016-10-17 WO PCT/JP2016/080721 patent/WO2017073394A1/en active Application Filing
- 2016-10-17 SG SG11201801236RA patent/SG11201801236RA/en unknown
- 2016-10-17 CN CN201680037500.XA patent/CN108352386B/en active Active
- 2016-10-17 KR KR1020177036930A patent/KR102437354B1/en active IP Right Grant
- 2016-10-28 TW TW105134942A patent/TWI608597B/en active
-
2018
- 2018-02-12 IL IL257487A patent/IL257487B/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
TWI608597B (en) | 2017-12-11 |
KR102437354B1 (en) | 2022-08-30 |
CN108352386B (en) | 2021-06-25 |
CN108352386A (en) | 2018-07-31 |
IL257487A (en) | 2018-04-30 |
WO2017073394A1 (en) | 2017-05-04 |
JP5951097B1 (en) | 2016-07-13 |
KR20180077101A (en) | 2018-07-06 |
JP2017084960A (en) | 2017-05-18 |
TW201727877A (en) | 2017-08-01 |
SG11201801236RA (en) | 2018-03-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FF | Patent granted | ||
KB | Patent renewed |