IL257487A - התקן אחסון מוליכים למחצה לא נדיפים - Google Patents
התקן אחסון מוליכים למחצה לא נדיפיםInfo
- Publication number
- IL257487A IL257487A IL257487A IL25748718A IL257487A IL 257487 A IL257487 A IL 257487A IL 257487 A IL257487 A IL 257487A IL 25748718 A IL25748718 A IL 25748718A IL 257487 A IL257487 A IL 257487A
- Authority
- IL
- Israel
- Prior art keywords
- select gate
- gate electrode
- memory
- memory cell
- sidewall
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 183
- 230000015572 biosynthetic process Effects 0.000 claims description 344
- 239000000758 substrate Substances 0.000 claims description 22
- 125000006850 spacer group Chemical group 0.000 claims description 18
- 102000051628 Interleukin-1 receptor antagonist Human genes 0.000 claims 1
- 108700021006 Interleukin-1 receptor antagonist Proteins 0.000 claims 1
- 229940054136 kineret Drugs 0.000 claims 1
- 239000010410 layer Substances 0.000 description 130
- 230000002093 peripheral effect Effects 0.000 description 33
- 239000013256 coordination polymer Substances 0.000 description 23
- 239000000463 material Substances 0.000 description 13
- 229910021332 silicide Inorganic materials 0.000 description 13
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 13
- 239000012774 insulation material Substances 0.000 description 12
- 101100081899 Arabidopsis thaliana OST48 gene Proteins 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 101001047515 Homo sapiens Lethal(2) giant larvae protein homolog 1 Proteins 0.000 description 4
- 102100022956 Lethal(2) giant larvae protein homolog 1 Human genes 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 101100237460 Rattus norvegicus Mgll gene Proteins 0.000 description 3
- 101100401357 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) MGL2 gene Proteins 0.000 description 3
- 101100020724 Zea mays MGL3 gene Proteins 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015211619A JP5951097B1 (ja) | 2015-10-28 | 2015-10-28 | 不揮発性半導体記憶装置 |
| PCT/JP2016/080721 WO2017073394A1 (ja) | 2015-10-28 | 2016-10-17 | 不揮発性半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL257487A true IL257487A (he) | 2018-04-30 |
| IL257487B IL257487B (he) | 2020-03-31 |
Family
ID=56375210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL257487A IL257487B (he) | 2015-10-28 | 2018-02-12 | התקן אחסון מוליכים למחצה לא נדיפים |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JP5951097B1 (he) |
| KR (1) | KR102437354B1 (he) |
| CN (1) | CN108352386B (he) |
| IL (1) | IL257487B (he) |
| SG (1) | SG11201801236RA (he) |
| TW (1) | TWI608597B (he) |
| WO (1) | WO2017073394A1 (he) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3450467B2 (ja) * | 1993-12-27 | 2003-09-22 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
| JP4058232B2 (ja) * | 2000-11-29 | 2008-03-05 | 株式会社ルネサステクノロジ | 半導体装置及びｉｃカード |
| JP2005142354A (ja) * | 2003-11-06 | 2005-06-02 | Matsushita Electric Ind Co Ltd | 不揮発性半導体記憶装置及びその駆動方法及びその製造方法 |
| US20110204374A1 (en) * | 2009-01-20 | 2011-08-25 | Sharp Kabushiki Kaisha | Thin film diode and method for fabricating the same |
| JP2011129816A (ja) | 2009-12-21 | 2011-06-30 | Renesas Electronics Corp | 半導体装置 |
| JP5908803B2 (ja) * | 2012-06-29 | 2016-04-26 | 株式会社フローディア | 不揮発性半導体記憶装置 |
| US9553207B2 (en) * | 2013-09-25 | 2017-01-24 | Synopsys, Inc. | NVM device using FN tunneling with parallel powered source and drain |
-
2015
- 2015-10-28 JP JP2015211619A patent/JP5951097B1/ja active Active
-
2016
- 2016-10-17 WO PCT/JP2016/080721 patent/WO2017073394A1/ja not_active Ceased
- 2016-10-17 SG SG11201801236RA patent/SG11201801236RA/en unknown
- 2016-10-17 KR KR1020177036930A patent/KR102437354B1/ko active Active
- 2016-10-17 CN CN201680037500.XA patent/CN108352386B/zh active Active
- 2016-10-28 TW TW105134942A patent/TWI608597B/zh active
-
2018
- 2018-02-12 IL IL257487A patent/IL257487B/he active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| CN108352386B (zh) | 2021-06-25 |
| TWI608597B (zh) | 2017-12-11 |
| KR102437354B1 (ko) | 2022-08-30 |
| JP5951097B1 (ja) | 2016-07-13 |
| JP2017084960A (ja) | 2017-05-18 |
| WO2017073394A1 (ja) | 2017-05-04 |
| SG11201801236RA (en) | 2018-03-28 |
| CN108352386A (zh) | 2018-07-31 |
| TW201727877A (zh) | 2017-08-01 |
| IL257487B (he) | 2020-03-31 |
| KR20180077101A (ko) | 2018-07-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| KB | Patent renewed |