IL141251A - The composition of the resin is sensitive to radiation - Google Patents

The composition of the resin is sensitive to radiation

Info

Publication number
IL141251A
IL141251A IL14125101A IL14125101A IL141251A IL 141251 A IL141251 A IL 141251A IL 14125101 A IL14125101 A IL 14125101A IL 14125101 A IL14125101 A IL 14125101A IL 141251 A IL141251 A IL 141251A
Authority
IL
Israel
Prior art keywords
group
ene
carbon atoms
acid
hept
Prior art date
Application number
IL14125101A
Other languages
English (en)
Hebrew (he)
Other versions
IL141251A0 (en
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000028456A external-priority patent/JP4425405B2/ja
Priority claimed from JP2000273962A external-priority patent/JP2002082438A/ja
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of IL141251A0 publication Critical patent/IL141251A0/xx
Publication of IL141251A publication Critical patent/IL141251A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/128—Radiation-activated cross-linking agent containing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
IL14125101A 2000-02-04 2001-02-02 The composition of the resin is sensitive to radiation IL141251A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000028456A JP4425405B2 (ja) 2000-02-04 2000-02-04 ポジ型感放射線性樹脂組成物
JP2000273962A JP2002082438A (ja) 2000-09-08 2000-09-08 感放射線性樹脂組成物

Publications (2)

Publication Number Publication Date
IL141251A0 IL141251A0 (en) 2002-03-10
IL141251A true IL141251A (en) 2005-12-18

Family

ID=26584936

Family Applications (1)

Application Number Title Priority Date Filing Date
IL14125101A IL141251A (en) 2000-02-04 2001-02-02 The composition of the resin is sensitive to radiation

Country Status (6)

Country Link
US (1) US6623907B2 (de)
EP (1) EP1122605A3 (de)
KR (1) KR100710104B1 (de)
IL (1) IL141251A (de)
SG (1) SG90230A1 (de)
TW (1) TWI232353B (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6623907B2 (en) * 2000-02-04 2003-09-23 Jsr Corporation Radiation-sensitive resin composition
JP2002072477A (ja) * 2000-06-12 2002-03-12 Jsr Corp 感放射線性樹脂組成物
JP4838437B2 (ja) * 2000-06-16 2011-12-14 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4694686B2 (ja) * 2000-08-31 2011-06-08 東京応化工業株式会社 半導体素子製造方法
JP4438218B2 (ja) * 2000-11-16 2010-03-24 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4225699B2 (ja) * 2001-03-12 2009-02-18 富士フイルム株式会社 ポジ型感光性組成物
DE10131670A1 (de) * 2001-06-29 2003-01-16 Infineon Technologies Ag Fotoresists mit Reaktionsankern für eine chemische Nachverstärkung von Resiststrukturen für Belichtungen bei 157 nm
KR100784672B1 (ko) * 2001-08-20 2007-12-12 주식회사 동진쎄미켐 감광성 수지 조성물
JP4595275B2 (ja) * 2001-09-28 2010-12-08 住友化学株式会社 化学増幅型ポジ型レジスト組成物
US7531286B2 (en) * 2002-03-15 2009-05-12 Jsr Corporation Radiation-sensitive resin composition
JP4048824B2 (ja) * 2002-05-09 2008-02-20 Ｊｓｒ株式会社 感放射線性樹脂組成物
TWI314943B (en) * 2002-08-29 2009-09-21 Radiation-sensitive resin composition
JP3937996B2 (ja) * 2002-10-08 2007-06-27 Ｊｓｒ株式会社 感放射性樹脂組成物
US7005230B2 (en) * 2003-01-16 2006-02-28 Jsr Corporation Radiation-sensitive resin composition
JP4110398B2 (ja) * 2003-03-07 2008-07-02 信越化学工業株式会社 α位メチル基に酸素置換基を有する脂環含有メタクリレート化合物
JP4029288B2 (ja) * 2003-05-21 2008-01-09 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP4140506B2 (ja) * 2003-10-28 2008-08-27 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4308687B2 (ja) * 2004-03-11 2009-08-05 富士フイルム株式会社 平版印刷版原版
JP2006078760A (ja) * 2004-09-09 2006-03-23 Tokyo Ohka Kogyo Co Ltd 電子線またはｅｕｖ（極端紫外光）用レジスト組成物及びレジストパターン形成方法
KR100745064B1 (ko) * 2004-09-17 2007-08-01 주식회사 하이닉스반도체 상부 반사방지막 조성물 및 이를 이용한 반도체 소자의패턴 형성 방법
US7534548B2 (en) 2005-06-02 2009-05-19 Hynix Semiconductor Inc. Polymer for immersion lithography and photoresist composition
US20080020289A1 (en) * 2006-07-24 2008-01-24 Shin-Etsu Chemical Co., Ltd. Novel polymer, positive resist composition and patterning process using the same
JP5548406B2 (ja) * 2008-08-22 2014-07-16 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法、高分子化合物
JP4813537B2 (ja) * 2008-11-07 2011-11-09 信越化学工業株式会社 熱酸発生剤を含有するレジスト下層材料、レジスト下層膜形成基板及びパターン形成方法
JP5337579B2 (ja) 2008-12-04 2013-11-06 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法
US8338262B2 (en) * 2009-06-04 2012-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Dual wavelength exposure method and system for semiconductor device manufacturing
JP2011057663A (ja) * 2009-08-11 2011-03-24 Sumitomo Chemical Co Ltd 化合物及びフォトレジスト組成物
JP2011059672A (ja) * 2009-08-11 2011-03-24 Sumitomo Chemical Co Ltd フォトレジスト組成物
JP5608437B2 (ja) * 2009-08-28 2014-10-15 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物並びに該組成物を用いたレジスト膜及びパターン形成方法
JP5401218B2 (ja) * 2009-09-03 2014-01-29 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法
US8900790B2 (en) * 2009-09-16 2014-12-02 Sumitomo Chemical Company, Limited Photoresist composition
US20110065047A1 (en) * 2009-09-16 2011-03-17 Sumitomo Chemichal Company, Limited Photoresist composition
JP5470053B2 (ja) * 2010-01-05 2014-04-16 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法
JP5618815B2 (ja) * 2010-12-24 2014-11-05 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、並びに、この組成物を用いた感活性光線性又は感放射線性膜及びパターン形成方法
JP5439441B2 (ja) * 2011-07-20 2014-03-12 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、これを用いた感活性光線性又は感放射線性膜、及び、パターン形成方法
JP6002378B2 (ja) 2011-11-24 2016-10-05 東京応化工業株式会社 高分子化合物の製造方法
US8795948B2 (en) 2012-03-22 2014-08-05 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern and polymeric compound
US8795947B2 (en) 2012-03-22 2014-08-05 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
US9453139B2 (en) 2013-08-20 2016-09-27 Rohm And Haas Electronic Materials Llc Hot melt compositions with improved etch resistance
US10036953B2 (en) * 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US20210198468A1 (en) * 2019-12-31 2021-07-01 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresist composition and method of manufacturing a semiconductor device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JPS6052845A (ja) 1983-09-02 1985-03-26 Japan Synthetic Rubber Co Ltd パタ−ン形成材料
JPH0225850A (ja) 1988-07-15 1990-01-29 Hitachi Ltd 放射線感応性組成物およびそれを用いたパターン形成法
US5521601A (en) 1995-04-21 1996-05-28 International Business Machines Corporation Power-efficient technique for multiple tag discrimination
EP0819981B1 (de) 1996-07-18 2002-06-05 JSR Corporation Strahlungsempfindliche Harzzusammensetzung
US6187504B1 (en) 1996-12-19 2001-02-13 Jsr Corporation Radiation sensitive resin composition
TWI232855B (en) * 1998-05-19 2005-05-21 Jsr Corp Diazodisulfone compound and radiation-sensitive resin composition
KR100520168B1 (ko) * 1999-06-21 2005-10-10 주식회사 하이닉스반도체 화학증폭형 레지스트에 첨가되는 새로운 페닐렌디아민계 유도체
EP1085379B1 (de) 1999-09-17 2006-01-04 JSR Corporation Strahlungsempfindliche Harzzusammensetzung
JP3969909B2 (ja) * 1999-09-27 2007-09-05 富士フイルム株式会社 ポジ型フォトレジスト組成物
US6623907B2 (en) * 2000-02-04 2003-09-23 Jsr Corporation Radiation-sensitive resin composition
JP2002072477A (ja) * 2000-06-12 2002-03-12 Jsr Corp 感放射線性樹脂組成物

Also Published As

Publication number Publication date
KR20010089148A (ko) 2001-09-29
EP1122605A2 (de) 2001-08-08
US6623907B2 (en) 2003-09-23
US20010023050A1 (en) 2001-09-20
KR100710104B1 (ko) 2007-04-20
EP1122605A3 (de) 2001-09-19
IL141251A0 (en) 2002-03-10
SG90230A1 (en) 2002-07-23
TWI232353B (en) 2005-05-11

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