IL140565A0 - Method of fabricating a stacked poly-poly and mos capacitor using a sige integration scheme - Google Patents
Method of fabricating a stacked poly-poly and mos capacitor using a sige integration schemeInfo
- Publication number
- IL140565A0 IL140565A0 IL14056500A IL14056500A IL140565A0 IL 140565 A0 IL140565 A0 IL 140565A0 IL 14056500 A IL14056500 A IL 14056500A IL 14056500 A IL14056500 A IL 14056500A IL 140565 A0 IL140565 A0 IL 140565A0
- Authority
- IL
- Israel
- Prior art keywords
- poly
- polysilicon layer
- mos capacitor
- fabricating
- stacked
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title abstract 2
- 230000010354 integration Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 6
- 229920005591 polysilicon Polymers 0.000 abstract 6
- 239000002019 doping agent Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/551,168 US6507063B2 (en) | 2000-04-17 | 2000-04-17 | Poly-poly/MOS capacitor having a gate encapsulating first electrode layer |
Publications (1)
Publication Number | Publication Date |
---|---|
IL140565A0 true IL140565A0 (en) | 2002-02-10 |
Family
ID=24200135
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL14056500A IL140565A0 (en) | 2000-04-17 | 2000-12-26 | Method of fabricating a stacked poly-poly and mos capacitor using a sige integration scheme |
Country Status (12)
Country | Link |
---|---|
US (2) | US6507063B2 (xx) |
EP (1) | EP1148557B1 (xx) |
JP (1) | JP2002009163A (xx) |
KR (1) | KR20010096611A (xx) |
CN (1) | CN1184698C (xx) |
AT (1) | ATE360890T1 (xx) |
DE (1) | DE60128028T2 (xx) |
ES (1) | ES2281379T3 (xx) |
IL (1) | IL140565A0 (xx) |
MY (1) | MY133800A (xx) |
SG (1) | SG107561A1 (xx) |
TW (1) | TW506043B (xx) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6440811B1 (en) * | 2000-12-21 | 2002-08-27 | International Business Machines Corporation | Method of fabricating a poly-poly capacitor with a SiGe BiCMOS integration scheme |
JP2004530549A (ja) * | 2001-05-31 | 2004-10-07 | ザ プロクター アンド ギャンブル カンパニー | 可変液体要素中の相変化を開始するトリガー機構 |
JP2003224204A (ja) * | 2002-01-29 | 2003-08-08 | Mitsubishi Electric Corp | キャパシタを有する半導体装置 |
KR100451517B1 (ko) * | 2002-07-19 | 2004-10-06 | 주식회사 하이닉스반도체 | 반도체소자의 캐패시터 제조방법 |
JP2004228188A (ja) * | 2003-01-21 | 2004-08-12 | Renesas Technology Corp | 半導体装置 |
TWI233689B (en) * | 2003-04-14 | 2005-06-01 | Samsung Electronics Co Ltd | Capacitors of semiconductor devices including silicon-germanium and metallic electrodes and methods of fabricating the same |
DE10324066A1 (de) * | 2003-05-27 | 2004-12-30 | Texas Instruments Deutschland Gmbh | Stapelkondensator und Verfahren zur Herstellung eines solchen |
CN1327525C (zh) * | 2003-12-24 | 2007-07-18 | 上海宏力半导体制造有限公司 | 测量电容的结构与方法 |
EP1560269A1 (en) * | 2004-01-30 | 2005-08-03 | Alcatel | MOS capacitor in an integrated semiconductor circuit |
US7709313B2 (en) * | 2005-07-19 | 2010-05-04 | International Business Machines Corporation | High performance capacitors in planar back gates CMOS |
CN100446254C (zh) * | 2005-12-15 | 2008-12-24 | 上海华虹Nec电子有限公司 | 半导体电容 |
US7821053B2 (en) * | 2006-11-15 | 2010-10-26 | International Business Machines Corporation | Tunable capacitor |
US7670920B2 (en) | 2007-04-09 | 2010-03-02 | Texas Instruments Incorporated | Methods and apparatus for forming a polysilicon capacitor |
KR100979001B1 (ko) * | 2007-12-27 | 2010-08-30 | 주식회사 동부하이텍 | 커패시터 및 커패시터 제조 방법 |
CN102088001B (zh) * | 2009-12-04 | 2013-10-09 | 中芯国际集成电路制造(上海)有限公司 | 快闪存储器及其制作方法 |
US8318575B2 (en) * | 2011-02-07 | 2012-11-27 | Infineon Technologies Ag | Compressive polycrystalline silicon film and method of manufacture thereof |
US9112060B2 (en) | 2011-03-23 | 2015-08-18 | Freescale Semiconductor, Inc. | Low-leakage, high-capacitance capacitor structures and method of making |
US11009788B2 (en) | 2011-09-09 | 2021-05-18 | Centera Photonics Inc. | Method for manufacturing optical electrical module and substrate of an optical electrical module |
US9581772B2 (en) | 2011-09-09 | 2017-02-28 | Centera Photonics Inc. | Optical electrical module used for optical communication |
US9379202B2 (en) * | 2012-11-12 | 2016-06-28 | Nvidia Corporation | Decoupling capacitors for interposers |
CN104851776A (zh) * | 2014-02-14 | 2015-08-19 | 中芯国际集成电路制造(上海)有限公司 | MiS电容器结构及其制造方法 |
JP2016162904A (ja) * | 2015-03-03 | 2016-09-05 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US9905707B1 (en) * | 2016-10-28 | 2018-02-27 | Globalfoundries Inc. | MOS capacitive structure of reduced capacitance variability |
CN111180394B (zh) * | 2018-11-13 | 2022-09-09 | 无锡华润上华科技有限公司 | 形成有电容器的半导体器件及其制造方法 |
KR20200113871A (ko) | 2019-03-26 | 2020-10-07 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그 제조방법 |
US11257940B2 (en) | 2020-01-14 | 2022-02-22 | Cree, Inc. | Group III HEMT and capacitor that share structural features |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL191683C (nl) * | 1977-02-21 | 1996-02-05 | Zaidan Hojin Handotai Kenkyu | Halfgeleidergeheugenschakeling. |
US4246502A (en) * | 1978-08-16 | 1981-01-20 | Mitel Corporation | Means for coupling incompatible signals to an integrated circuit and for deriving operating supply therefrom |
US4805071A (en) * | 1987-11-30 | 1989-02-14 | Texas Instruments Incorporated | High voltage capacitor for integrated circuits |
JP2654393B2 (ja) * | 1988-05-16 | 1997-09-17 | 株式会社日立製作所 | 半導体装置 |
US4914546A (en) * | 1989-02-03 | 1990-04-03 | Micrel Incorporated | Stacked multi-polysilicon layer capacitor |
JPH0389545A (ja) * | 1989-08-31 | 1991-04-15 | Sharp Corp | 集積回路のためのキャパシタ |
US5236859A (en) * | 1990-06-05 | 1993-08-17 | Samsung Electronics Co., Ltd. | Method of making stacked-capacitor for a dram cell same |
US5104822A (en) * | 1990-07-30 | 1992-04-14 | Ramtron Corporation | Method for creating self-aligned, non-patterned contact areas and stacked capacitors using the method |
US5082797A (en) * | 1991-01-22 | 1992-01-21 | Micron Technology, Inc. | Method of making stacked textured container capacitor |
US5206788A (en) * | 1991-12-12 | 1993-04-27 | Ramtron Corporation | Series ferroelectric capacitor structure for monolithic integrated circuits and method |
JP3120528B2 (ja) * | 1992-01-29 | 2000-12-25 | 日本電気株式会社 | 半導体装置 |
KR940016805A (ko) * | 1992-12-31 | 1994-07-25 | 김주용 | 반도체 소자의 적층 캐패시터 제조 방법 |
US5583359A (en) * | 1995-03-03 | 1996-12-10 | Northern Telecom Limited | Capacitor structure for an integrated circuit |
US5663088A (en) | 1995-05-19 | 1997-09-02 | Micron Technology, Inc. | Method of forming a Ta2 O5 dielectric layer with amorphous diffusion barrier layer and method of forming a capacitor having a Ta2 O5 dielectric layer and amorphous diffusion barrier layer |
DE19531629C1 (de) * | 1995-08-28 | 1997-01-09 | Siemens Ag | Verfahren zur Herstellung einer EEPROM-Halbleiterstruktur |
US5602051A (en) | 1995-10-06 | 1997-02-11 | International Business Machines Corporation | Method of making stacked electrical device having regions of electrical isolation and electrical connection on a given stack level |
KR100275544B1 (ko) | 1995-12-20 | 2001-01-15 | 이계철 | 선택적 컬렉터 박막 성장을 이용한 초자기정렬 바이폴러 트랜지스터의 제조방법 |
US6072160A (en) * | 1996-06-03 | 2000-06-06 | Applied Materials, Inc. | Method and apparatus for enhancing the efficiency of radiant energy sources used in rapid thermal processing of substrates by energy reflection |
KR100413805B1 (ko) | 1996-10-31 | 2004-06-26 | 삼성전자주식회사 | 누설전류를이용한매트릭스형다진법강유전체랜덤액세서메모리 |
US5918119A (en) | 1997-12-08 | 1999-06-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Process for integrating MOSFET devices, comprised of different gate insulator thicknesses, with a capacitor structure |
TW377512B (en) * | 1998-02-06 | 1999-12-21 | United Microelectronics Corp | Capacitor for DRAM and the method of manufacturing the same |
US6288419B1 (en) * | 1999-07-09 | 2001-09-11 | Micron Technology, Inc. | Low resistance gate flash memory |
-
2000
- 2000-04-17 US US09/551,168 patent/US6507063B2/en not_active Expired - Lifetime
- 2000-12-26 IL IL14056500A patent/IL140565A0/xx not_active IP Right Cessation
-
2001
- 2001-01-31 TW TW090101901A patent/TW506043B/zh not_active IP Right Cessation
- 2001-02-22 ES ES01000026T patent/ES2281379T3/es not_active Expired - Lifetime
- 2001-02-22 EP EP01000026A patent/EP1148557B1/en not_active Expired - Lifetime
- 2001-02-22 DE DE60128028T patent/DE60128028T2/de not_active Expired - Lifetime
- 2001-02-22 AT AT01000026T patent/ATE360890T1/de not_active IP Right Cessation
- 2001-03-16 KR KR1020010013529A patent/KR20010096611A/ko not_active Application Discontinuation
- 2001-03-26 SG SG200101931A patent/SG107561A1/en unknown
- 2001-03-29 MY MYPI20011502A patent/MY133800A/en unknown
- 2001-04-12 JP JP2001113510A patent/JP2002009163A/ja active Pending
- 2001-04-16 CN CNB011166266A patent/CN1184698C/zh not_active Expired - Fee Related
-
2002
- 2002-11-12 US US10/292,204 patent/US6833299B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1148557A2 (en) | 2001-10-24 |
US20020089008A1 (en) | 2002-07-11 |
SG107561A1 (en) | 2004-12-29 |
DE60128028T2 (de) | 2008-01-03 |
US6507063B2 (en) | 2003-01-14 |
CN1184698C (zh) | 2005-01-12 |
MY133800A (en) | 2007-11-30 |
KR20010096611A (ko) | 2001-11-07 |
ATE360890T1 (de) | 2007-05-15 |
EP1148557B1 (en) | 2007-04-25 |
ES2281379T3 (es) | 2007-10-01 |
TW506043B (en) | 2002-10-11 |
JP2002009163A (ja) | 2002-01-11 |
US20030092239A1 (en) | 2003-05-15 |
CN1318869A (zh) | 2001-10-24 |
US6833299B2 (en) | 2004-12-21 |
DE60128028D1 (de) | 2007-06-06 |
EP1148557A3 (en) | 2003-08-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IL140565A0 (en) | Method of fabricating a stacked poly-poly and mos capacitor using a sige integration scheme | |
EP0859402A3 (en) | Method of manufacturing a MOS electrode | |
US6348719B1 (en) | Using a change in doping of poly gate to permit placing both high voltage and low voltage transistors on the same chip | |
US6475838B1 (en) | Methods for forming decoupling capacitors | |
US7566600B2 (en) | SOI device with reduced drain induced barrier lowering | |
US6902967B2 (en) | Integrated circuit with a MOS structure having reduced parasitic bipolar transistor action | |
US7393752B2 (en) | Semiconductor devices and method of fabrication | |
US20060063334A1 (en) | Fin FET diode structures and methods for building | |
EP1030363A3 (en) | Integration of bipolar and CMOS devices for sub-0.1 micrometer transistors | |
US8377810B2 (en) | Schottky barrier diode and method of forming a Schottky barrier diode | |
WO2002097889A3 (en) | Semiconductor device and a method therefor | |
US9373716B2 (en) | Impact ionization devices, and methods of forming impact ionization devices | |
US5506158A (en) | BiCMOS process with surface channel PMOS transistor | |
EP0746032A3 (en) | Semiconductor integrated circuit comprising bipolar transistors and MOS transistors and associated fabrication method | |
SG146447A1 (en) | Esd parasitic bipolar transistors with high resistivity regions in the collector | |
US6867107B2 (en) | Variable capacitance device and process for manufacturing the same | |
US7858469B1 (en) | Method for forming a trigger device for ESD protection circuit | |
CN100345298C (zh) | 半导体芯片与半导体组件及其形成方法 | |
EP1187193A3 (en) | Semiconductor integrated circuit device and method of manufacturing the same | |
WO2000045441A3 (de) | Halbleitervorrichtung mit mehrfachdielektrikum | |
JP4886384B2 (ja) | Nandゲート回路及びダイナミック回路 | |
WO2003026007A3 (en) | Cmos pixel design for minimization of defect-induced leakage current | |
JPH0492416A (ja) | 半導体装置の製造方法 | |
CN101996994B (zh) | 半导体器件及其制造方法 | |
Miwa et al. | A complementary bipolar technology for low cost and high performance mixed analog/digital applications |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FF | Patent granted | ||
KB | Patent renewed | ||
KB | Patent renewed | ||
KB | Patent renewed | ||
KB | Patent renewed | ||
MM9K | Patent not in force due to non-payment of renewal fees |