IL128430A - Method for producing high surface area foil electrodes - Google Patents

Method for producing high surface area foil electrodes

Info

Publication number
IL128430A
IL128430A IL12843099A IL12843099A IL128430A IL 128430 A IL128430 A IL 128430A IL 12843099 A IL12843099 A IL 12843099A IL 12843099 A IL12843099 A IL 12843099A IL 128430 A IL128430 A IL 128430A
Authority
IL
Israel
Prior art keywords
valve metal
substrate
electrode
aluminum
layer
Prior art date
Application number
IL12843099A
Other languages
English (en)
Other versions
IL128430A0 (en
Inventor
Dina Katsir
Iris Tartakovsky
Israel Tartakovsky
Original Assignee
Acktar Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Acktar Ltd filed Critical Acktar Ltd
Publication of IL128430A0 publication Critical patent/IL128430A0/xx
Publication of IL128430A publication Critical patent/IL128430A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/712—Electrodes having non-planar surfaces, e.g. formed by texturisation being rough surfaces, e.g. using hemispherical grains
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y10T29/435—Solid dielectric type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Physical Vapour Deposition (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
IL12843099A 1998-03-03 1999-02-09 Method for producing high surface area foil electrodes IL128430A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/033,664 US6287673B1 (en) 1998-03-03 1998-03-03 Method for producing high surface area foil electrodes

Publications (2)

Publication Number Publication Date
IL128430A0 IL128430A0 (en) 2000-01-31
IL128430A true IL128430A (en) 2004-09-27

Family

ID=21871724

Family Applications (1)

Application Number Title Priority Date Filing Date
IL12843099A IL128430A (en) 1998-03-03 1999-02-09 Method for producing high surface area foil electrodes

Country Status (5)

Country Link
US (3) US6287673B1 (de)
EP (1) EP0940828B1 (de)
JP (1) JP3746627B2 (de)
DE (1) DE69939916D1 (de)
IL (1) IL128430A (de)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6287673B1 (en) * 1998-03-03 2001-09-11 Acktar Ltd. Method for producing high surface area foil electrodes
IL141592A (en) * 2001-02-22 2007-02-11 Zvi Finkelstein Electrolytic capacitors and method for making them
JP3329380B2 (ja) * 1999-09-21 2002-09-30 日本電気株式会社 半導体装置およびその製造方法
DE10005124C2 (de) * 2000-02-07 2002-03-28 Becromal Spa Elektrode sowie Verfahren zu ihrer Herstellung
US7066234B2 (en) 2001-04-25 2006-06-27 Alcove Surfaces Gmbh Stamping tool, casting mold and methods for structuring a surface of a work piece
US6660660B2 (en) 2000-10-10 2003-12-09 Asm International, Nv. Methods for making a dielectric stack in an integrated circuit
US6844203B2 (en) * 2001-08-30 2005-01-18 Micron Technology, Inc. Gate oxides, and methods of forming
US8026161B2 (en) 2001-08-30 2011-09-27 Micron Technology, Inc. Highly reliable amorphous high-K gate oxide ZrO2
US6953730B2 (en) * 2001-12-20 2005-10-11 Micron Technology, Inc. Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics
US6767795B2 (en) 2002-01-17 2004-07-27 Micron Technology, Inc. Highly reliable amorphous high-k gate dielectric ZrOXNY
US6803151B2 (en) * 2002-02-21 2004-10-12 Delphi Technologies, Inc. Electrode
US7323422B2 (en) * 2002-03-05 2008-01-29 Asm International N.V. Dielectric layers and methods of forming the same
US6812100B2 (en) * 2002-03-13 2004-11-02 Micron Technology, Inc. Evaporation of Y-Si-O films for medium-k dielectrics
JP4367838B2 (ja) * 2002-03-25 2009-11-18 堀金属表面処理工業株式会社 導電性陽極酸化皮膜を表面に有するマグネシウム又はマグネシウム合金製品及びその製造方法
US7589029B2 (en) 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US7135421B2 (en) 2002-06-05 2006-11-14 Micron Technology, Inc. Atomic layer-deposited hafnium aluminum oxide
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
IL153289A (en) * 2002-12-05 2010-06-16 Acktar Ltd Electrodes for electrolytic capacitors and method for producing them
JP4414663B2 (ja) * 2003-03-03 2010-02-10 財団法人国際科学振興財団 液晶ディスプレイバックライトユニット用可視光反射部材と可視光反射部材の製造方法
US7192892B2 (en) 2003-03-04 2007-03-20 Micron Technology, Inc. Atomic layer deposited dielectric layers
US7049192B2 (en) 2003-06-24 2006-05-23 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectrics
US7029971B2 (en) * 2003-07-17 2006-04-18 E. I. Du Pont De Nemours And Company Thin film dielectrics for capacitors and methods of making thereof
IL161606A0 (en) * 2004-04-25 2004-09-27 Acktar Ltd Integral separator for electrolytic capacitors
US7715174B1 (en) 2004-05-17 2010-05-11 Pacesetter, Inc. Electrolytic capacitors with alternate cathode materials for use in pulse discharge applications
GB2418628B (en) 2004-10-01 2006-12-13 Acktar Ltd Improved laminates and the manufacture thereof
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
JP4882458B2 (ja) * 2005-09-30 2012-02-22 日本ケミコン株式会社 電解コンデンサ
JP4983074B2 (ja) * 2005-09-30 2012-07-25 日本ケミコン株式会社 電解コンデンサ
JP4797754B2 (ja) * 2005-09-30 2011-10-19 日本ケミコン株式会社 電解コンデンサ用電極材
JP4983073B2 (ja) * 2005-09-30 2012-07-25 日本ケミコン株式会社 電解コンデンサ
JP4983072B2 (ja) * 2005-09-30 2012-07-25 日本ケミコン株式会社 電解コンデンサ
JP4984031B2 (ja) * 2005-09-30 2012-07-25 日本ケミコン株式会社 電解コンデンサ用電極材
JP4984030B2 (ja) * 2005-09-30 2012-07-25 日本ケミコン株式会社 電解コンデンサ用電極材
US8414962B2 (en) 2005-10-28 2013-04-09 The Penn State Research Foundation Microcontact printed thin film capacitors
IL173121A (en) * 2006-01-12 2011-07-31 Dina Katsir Electrodes, membranes, printing plate precursors and other articles including multi-strata porous coatings
JP2007273912A (ja) * 2006-03-31 2007-10-18 Nippon Chemicon Corp 電解コンデンサ
EP2009653A4 (de) 2006-03-31 2015-08-12 Nippon Chemicon Elektrodenmaterial für einen elektrolytkondensator
IL175270A0 (en) 2006-04-26 2006-09-05 Acktar Ltd Composite inorganic membrane for separation in fluid systems
JP2008010490A (ja) * 2006-06-27 2008-01-17 Nichicon Corp 電解コンデンサ用電極の製造方法
JP2008258232A (ja) * 2007-03-31 2008-10-23 Nippon Chemicon Corp 電解コンデンサ用電極材
JP4992522B2 (ja) * 2007-04-05 2012-08-08 パナソニック株式会社 コンデンサ用電極箔及びそれを用いたコンデンサ
DE102007055844A1 (de) 2007-12-17 2009-06-25 Wacker Chemie Ag Vernetzbare Siliconbeschichtungszusammensetzungen
JP5016472B2 (ja) * 2007-12-19 2012-09-05 ニチコン株式会社 電解コンデンサ用電極箔の製造方法
JP2009164412A (ja) 2008-01-08 2009-07-23 Kobe Steel Ltd 多孔質金属薄膜およびその製造方法、ならびにコンデンサ
DE102008005008A1 (de) 2008-01-17 2009-07-23 Vostock Ltd. Mehrschichtige Anode
JP4978509B2 (ja) * 2008-02-22 2012-07-18 富士通株式会社 電極箔の製造方法
JP5780407B2 (ja) 2008-03-12 2015-09-16 アクタール リミテッド 薄層構造（ｔｈｉｎ−ｌａｙｅｒｅｄｓｔｒｕｃｔｕｒｅ）
JP5293743B2 (ja) * 2008-09-11 2013-09-18 パナソニック株式会社 コンデンサ用電極箔とそれを用いた電解コンデンサ
JP5522048B2 (ja) * 2008-10-10 2014-06-18 パナソニック株式会社 コンデンサ用電極箔及びその製造方法とその電極箔を用いた固体電解コンデンサ
BRPI0906259A2 (pt) * 2008-12-26 2018-12-26 Sharp Kk método de fabricação de um molde e método de produção de um filme antirreflexão usando o molde.
WO2010109783A1 (ja) 2009-03-23 2010-09-30 東洋アルミニウム株式会社 電極構造体、コンデンサ、電池および電極構造体の製造方法
CN102549692B (zh) 2009-10-09 2013-09-18 松下电器产业株式会社 电极箔及使用该电极箔的电容器
US20120261162A1 (en) 2010-04-07 2012-10-18 Toyo Aluminium Kabushiki Kaisha Method for manufacturing electrode structure, electrode structure, and capacitor
JP5692726B2 (ja) * 2010-08-31 2015-04-01 国立大学法人 鹿児島大学 アルミニウム薄膜の製造方法
ITMI20110089A1 (it) 2011-01-26 2012-07-27 Industrie De Nora Spa Elettrodo per evoluzione di ossigeno in processi elettrochimici industriali
DE102011116939A1 (de) * 2011-10-26 2013-05-02 H.C. Starck Gmbh Verzugsfreie schablonengedruckte Anoden auf Ta-/Nb-Blech
EP2951331A4 (de) * 2013-01-31 2017-04-19 Dina Katsir Instrumente mit niedriger fluoreszenz
ITUB20159439A1 (it) 2015-12-21 2017-06-21 Industrie De Nora Spa Rivestimento anticorrosivo e metodo per il suo ottenimento
CN106910635A (zh) * 2017-02-24 2017-06-30 中国科学院合肥物质科学研究院 一种用于钽电容器的有序孔阵列阳极钽箔及其制备方法

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3011383A (en) 1957-04-30 1961-12-05 Carpenter L E Co Decorative optical material
US3443933A (en) 1964-06-11 1969-05-13 Leesona Corp Method of preparing metal blacks
NL146323B (nl) * 1968-03-25 1975-06-16 Matsushita Electric Industrial Co Ltd Werkwijze voor het vervaardigen van een dunfoeliecondensator en condensator, verkregen volgens deze werkwijze.
US3781610A (en) * 1972-05-22 1973-12-25 G Bodway Thin film circuits and method for manufacture
JPS5195858A (en) 1975-01-14 1976-08-23 ****** *** *ku***chi*se*ku*******ka*****************chi***ne********
JPS5271976A (en) * 1975-12-11 1977-06-15 Nec Corp Semiconductor device
US4138262A (en) 1976-09-20 1979-02-06 Energy Conversion Devices, Inc. Imaging film comprising bismuth image-forming layer
US4287449A (en) 1978-02-03 1981-09-01 Sharp Kabushiki Kaisha Light-absorption film for rear electrodes of electroluminescent display panel
JPS5573865A (en) 1978-11-21 1980-06-03 Fuji Photo Film Co Ltd Manufacture of vapor deposition coating
GB2056503B (en) * 1979-08-09 1983-12-07 Standard Telephones Cables Ltd Porous metal films
GB2056501A (en) 1979-08-09 1981-03-18 Standard Telephones Cables Ltd Porous metal films
DE3009533C2 (de) 1980-03-12 1986-11-06 D. Swarovski & Co., Wattens, Tirol Belag mit mittlerem Brechwert, Verfahren zu dessen Herstellung und Verwendung des Belages
US4455506A (en) 1981-05-11 1984-06-19 Gte Products Corporation Contrast enhanced electroluminescent device
US4822718A (en) 1982-09-30 1989-04-18 Brewer Science, Inc. Light absorbing coating
US4547702A (en) 1983-10-11 1985-10-15 Gte Products Corporation Thin film electroluminscent display device
US4602189A (en) 1983-10-13 1986-07-22 Sigmatron Nova, Inc. Light sink layer for a thin-film EL display panel
CA1197088A (en) 1983-10-17 1985-11-26 Jerzy A. Dobrowolski Vapour deposition regulating apparatus
US4634639A (en) 1984-04-30 1987-01-06 Hoya Corporation Electroluminescent panel having a light absorption layer of germanium oxide
US4537665A (en) 1984-09-04 1985-08-27 Sprague Electric Company Production of aluminum foil capacitor electrodes
US4672264A (en) 1985-01-08 1987-06-09 Phosphor Products Company Limited High contrast electroluminescent display panels
JPS61284092A (ja) 1985-06-07 1986-12-15 アルプス電気株式会社 薄膜ｅｌ表示素子
JPS6231922A (ja) * 1985-08-02 1987-02-10 Ise Electronics Corp 螢光光源管
US4582574A (en) 1985-08-15 1986-04-15 Sprague Electric Company Preparation of capacitor electrodes
US4670690A (en) 1985-10-23 1987-06-02 Rockwell International Corporation Thin film electrolumenescent display panel
US4870322A (en) 1986-04-15 1989-09-26 Hoya Corporation Electroluminescent panel having a layer of germanium nitride between an electroluminescent layer and a back electrode
DE3773870D1 (de) * 1986-12-24 1991-11-21 Showa Aluminium Co Ltd Eine aluminium-kondensatorelektrode fuer elektrolytische kondensatoren und verfahren zu ihrer herstellung.
WO1989001230A1 (en) 1987-07-30 1989-02-09 Matsushita Electric Industrial Co., Ltd. Electrolytic capacitor and production method thereof
US4857361A (en) 1988-04-18 1989-08-15 Ppg Industries, Inc. Haze-free infrared-reflecting coated glass
US4886591A (en) 1988-08-04 1989-12-12 Universite De Sherbrooke Phosphate bonded composite electrodes
KR940004756B1 (ko) 1988-09-28 1994-05-28 도오레 가부시기가이샤 알루미늄증착필름 및 그 제조방법
JPH0359930A (ja) 1989-07-27 1991-03-14 Toshiba Corp カラー受像管
KR910008076B1 (ko) 1989-09-07 1991-10-07 삼성전관 주식회사 전자발광소자의 제조방법
JPH059710A (ja) * 1991-07-02 1993-01-19 Nippon Chemicon Corp 電解コンデンサ用アルミニウム電極の製造方法
DE4207368A1 (de) 1991-08-06 1993-02-11 Biotronik Mess & Therapieg Stimmulationselektrode
DE4127743C2 (de) 1991-08-22 1994-05-11 Fraunhofer Ges Forschung Oberflächenvergrößerte Aluminiumfolie für Elektrolytkondensatoren und Vakuum-Beschichtungsverfahren zu deren Herstellung
DE4204193A1 (de) * 1992-02-10 1993-08-12 Vita Valve Medizintechnik Gmbh Verfahren zur herstellung eines elektrolytkondensators
FR2688092B1 (fr) 1992-02-14 1994-04-15 Traitement Metaux Alliages Sa Feuille pour electrode de condensateur electrolytique et procede de fabrication.
DE4208811A1 (de) 1992-03-19 1993-09-23 Merck Patent Gmbh Aufdampfmaterial zur herstellung hochbrechender optischer schichten
DE4209910A1 (de) 1992-03-26 1993-09-30 Char Kovskij Politekhn I Im V Verfahren zur Herstellung einer Aluminiumfolie für Elektroden eines oxidisch-elektrolytischen Kondensators, Folie zur Fertigung von Elektroden eines elektrolytischen Kondensators und elektrolytischer Kondensator
US5548474A (en) * 1994-03-01 1996-08-20 Avx Corporation Electrical components such as capacitors having electrodes with an insulating edge
US5576240A (en) * 1994-12-09 1996-11-19 Lucent Technologies Inc. Method for making a metal to metal capacitor
DE19525143A1 (de) 1995-07-11 1997-01-16 Biotronik Mess & Therapieg Elektrolytkondensator, insbesondere Tantal-Elektrolytkondensator
US5643432A (en) 1995-07-13 1997-07-01 Avx Corporation Selective anodization of capacitor anode body
KR0175017B1 (ko) * 1995-10-23 1999-04-01 윤종용 알루미나 형성장치 및 알루미나 마스크를 이용한 식각 방법
AU6321796A (en) * 1996-04-03 1997-10-22 Zakrytoe Aktsionernoe Obschestvo "Skb "Istra" Method and device for applying porous coatings and cathode film of an electrol ytic condenser
US6084285A (en) * 1997-10-20 2000-07-04 The Board Of Trustees Of The Leland Stanford Junior University Lateral flux capacitor having fractal-shaped perimeters
US6287673B1 (en) * 1998-03-03 2001-09-11 Acktar Ltd. Method for producing high surface area foil electrodes

Also Published As

Publication number Publication date
EP0940828B1 (de) 2008-11-19
IL128430A0 (en) 2000-01-31
US20010051442A1 (en) 2001-12-13
US20010006735A1 (en) 2001-07-05
EP0940828A3 (de) 2001-08-16
EP0940828A2 (de) 1999-09-08
DE69939916D1 (de) 2009-01-02
JPH11317331A (ja) 1999-11-16
US6764712B2 (en) 2004-07-20
JP3746627B2 (ja) 2006-02-15
US6933041B2 (en) 2005-08-23
US6287673B1 (en) 2001-09-11

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