IE52447B1 - A method of manufacturing a semiconductor device - Google Patents

A method of manufacturing a semiconductor device

Info

Publication number
IE52447B1
IE52447B1 IE2401/80A IE240180A IE52447B1 IE 52447 B1 IE52447 B1 IE 52447B1 IE 2401/80 A IE2401/80 A IE 2401/80A IE 240180 A IE240180 A IE 240180A IE 52447 B1 IE52447 B1 IE 52447B1
Authority
IE
Ireland
Prior art keywords
devices
transistor structures
emitter
different
emitter regions
Prior art date
Application number
IE2401/80A
Other languages
English (en)
Other versions
IE802401L (en
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of IE802401L publication Critical patent/IE802401L/xx
Publication of IE52447B1 publication Critical patent/IE52447B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/135—Non-interconnected multi-emitter structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/901—Masterslice integrated circuits comprising bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
IE2401/80A 1979-11-20 1980-11-19 A method of manufacturing a semiconductor device IE52447B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15030779A JPS5690548A (en) 1979-11-20 1979-11-20 Manufacture of semiconductor device by master slice system

Publications (2)

Publication Number Publication Date
IE802401L IE802401L (en) 1981-05-20
IE52447B1 true IE52447B1 (en) 1987-11-11

Family

ID=15494139

Family Applications (1)

Application Number Title Priority Date Filing Date
IE2401/80A IE52447B1 (en) 1979-11-20 1980-11-19 A method of manufacturing a semiconductor device

Country Status (6)

Country Link
US (1) US4388755A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0029369B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5690548A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1141869A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3071906D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IE (1) IE52447B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211248A (en) * 1981-06-22 1982-12-25 Hitachi Ltd Semiconductor integrated circuit device
JPS5830235A (ja) * 1981-08-18 1983-02-22 Fujitsu Ltd ゲ−トアレイ
FR2524206B1 (fr) * 1982-03-26 1985-12-13 Thomson Csf Mat Tel Circuit integre prediffuse, et procede d'interconnexion des cellules de ce circuit
JPS58213448A (ja) * 1982-06-07 1983-12-12 Hitachi Ltd 負荷駆動方式
US5068702A (en) * 1986-03-31 1991-11-26 Exar Corporation Programmable transistor
KR870009476A (ko) * 1986-03-31 1987-10-27 이그자 코오포레이숀 프로그램 가능 트랜지스터 및 그의 제조방법
GB2196787A (en) * 1986-10-31 1988-05-05 Stc Plc Semiconductor chip manufacture
JPH03218668A (ja) * 1989-11-24 1991-09-26 Nec Ic Microcomput Syst Ltd 半導体集積回路装置
JP2953755B2 (ja) * 1990-07-16 1999-09-27 株式会社東芝 マスタスライス方式の半導体装置
JP3145694B2 (ja) * 1990-08-28 2001-03-12 日本電気株式会社 半導体装置
CA2119523C (en) * 1994-03-21 1998-12-08 Clinton Cedric Norrad Animal trap
US6236072B1 (en) * 1998-11-12 2001-05-22 Telefonaktiebolaget Lm Ericsson (Publ) Method and system for emitter partitioning for SiGe RF power transistors
JP2003045882A (ja) 2001-07-27 2003-02-14 Nec Corp 半導体装置及びその設計方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3747088A (en) * 1970-12-30 1973-07-17 Analog Devices Inc Solid state digital to analog converter
US3884732A (en) * 1971-07-29 1975-05-20 Ibm Monolithic storage array and method of making
US3995304A (en) * 1972-01-10 1976-11-30 Teledyne, Inc. D/A bit switch
JPS5613383B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-10-31 1981-03-27
US3895977A (en) * 1973-12-20 1975-07-22 Harris Corp Method of fabricating a bipolar transistor
JPS51149776A (en) * 1975-06-17 1976-12-22 Mitsubishi Electric Corp Semiconductor device for power
JPS5393787A (en) * 1977-01-27 1978-08-17 Nec Home Electronics Ltd Production of semiconductor
JPS53147485A (en) * 1977-05-27 1978-12-22 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS54101281A (en) * 1978-01-26 1979-08-09 Nec Corp Logic circuit
JPS5561059A (en) * 1978-10-31 1980-05-08 Nec Corp Semiconductor ic device

Also Published As

Publication number Publication date
JPS6349376B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-10-04
US4388755A (en) 1983-06-21
JPS5690548A (en) 1981-07-22
EP0029369B1 (en) 1987-02-04
CA1141869A (en) 1983-02-22
IE802401L (en) 1981-05-20
EP0029369A3 (en) 1983-06-22
DE3071906D1 (en) 1987-03-12
EP0029369A2 (en) 1981-05-27

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Legal Events

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MK9A Patent expired