HK45986A - Semiconductor integrated circuit device and fabrication method thereof - Google Patents

Semiconductor integrated circuit device and fabrication method thereof Download PDF

Info

Publication number
HK45986A
HK45986A HK459/86A HK45986A HK45986A HK 45986 A HK45986 A HK 45986A HK 459/86 A HK459/86 A HK 459/86A HK 45986 A HK45986 A HK 45986A HK 45986 A HK45986 A HK 45986A
Authority
HK
Hong Kong
Prior art keywords
injection
iil
integrated circuit
circuit device
semiconductor integrated
Prior art date
Application number
HK459/86A
Other languages
English (en)
Inventor
Shimizu Isao
Original Assignee
Hitachi, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Publication of HK45986A publication Critical patent/HK45986A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/658—Integrated injection logic integrated in combination with analog structures

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
HK459/86A 1981-09-25 1986-06-19 Semiconductor integrated circuit device and fabrication method thereof HK45986A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56150607A JPS5852870A (ja) 1981-09-25 1981-09-25 半導体集積回路装置

Publications (1)

Publication Number Publication Date
HK45986A true HK45986A (en) 1986-06-27

Family

ID=15500577

Family Applications (1)

Application Number Title Priority Date Filing Date
HK459/86A HK45986A (en) 1981-09-25 1986-06-19 Semiconductor integrated circuit device and fabrication method thereof

Country Status (7)

Country Link
JP (1) JPS5852870A (cs)
DE (1) DE3235412A1 (cs)
FR (1) FR2513810B1 (cs)
GB (1) GB2106320B (cs)
HK (1) HK45986A (cs)
IT (1) IT1153732B (cs)
MY (1) MY8600559A (cs)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS616079A (ja) * 1984-06-19 1986-01-11 Fukuyama Gomme Kogyo Kk 弾性体クロ−ラ
JPS6267851A (ja) * 1985-09-20 1987-03-27 Hitachi Ltd 半導体集積回路装置
JPH0715830Y2 (ja) * 1989-01-13 1995-04-12 オーツタイヤ株式会社 クローラ用弾性履帯
JPH0562396U (ja) * 1992-05-18 1993-08-20 福山ゴム工業株式会社 ゴムクローラ
JP2008205418A (ja) * 2007-02-19 2008-09-04 Mikio Shimoyama いつでもスイッチ

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50124674A (cs) * 1974-02-19 1975-09-30
DE2624584A1 (de) * 1976-06-01 1977-12-15 Siemens Ag Anordnung zur versorgung von i hoch 2 l-schaltungen mit verschiedenen stroemen
NL7614610A (nl) * 1976-12-31 1978-07-04 Philips Nv Inrichting voor het koppelen van in i2l techniek bedreven transistoren met een op hogere rust- stroom ingestelde transistor.
NL7700420A (nl) * 1977-01-17 1978-07-19 Philips Nv Halfgeleiderinrichting en werkwijze ter ver- vaardiging daarvan.
DE2722667C2 (de) * 1977-05-18 1983-04-07 Siemens AG, 1000 Berlin und 8000 München Integrierte Halbleiterschaltung mit Invertern vom I↑2↑ L-Typ
FR2404962A1 (fr) * 1977-09-28 1979-04-27 Ibm France Dispositif semi-conducteur du genre cellule bistable en technologie a injection de courant, commandee par l'injecteur
DE2837519A1 (de) * 1978-08-28 1980-03-20 Philips Patentverwaltung Monolithische integrierte halbleiter- schaltungsanordnung
JPS55127060A (en) * 1979-03-24 1980-10-01 Mitsubishi Electric Corp Iil integrated circuit
JPS55134962A (en) * 1979-04-09 1980-10-21 Toshiba Corp Semiconductor device
JPS5635460A (en) * 1979-08-29 1981-04-08 Nec Corp Logic circuit using integrated injection type logic element

Also Published As

Publication number Publication date
JPS5852870A (ja) 1983-03-29
JPH0412032B2 (cs) 1992-03-03
DE3235412A1 (de) 1983-05-26
IT8223345A0 (it) 1982-09-20
FR2513810B1 (fr) 1986-06-27
FR2513810A1 (fr) 1983-04-01
MY8600559A (en) 1986-12-31
GB2106320A (en) 1983-04-07
GB2106320B (en) 1985-07-10
IT1153732B (it) 1987-01-14

Similar Documents

Publication Publication Date Title
EP0159408A3 (en) Method of manufacturing a semiconductor device comprising resistors
EP0459771A3 (en) Electrode for semiconductor device and method for producing the same
JPS53108390A (en) Semiconductor device and its manufacture
EP0461362A3 (en) Thin film semiconductor device and process for preparing the same
WO1995027313A1 (en) Method of manufacturing an antifuse with silicon spacers and resulting antifuse
EP0142639A3 (en) Method for forming narrow images on semiconductor substrates
HK45986A (en) Semiconductor integrated circuit device and fabrication method thereof
SE8306071D0 (sv) Sett att bilda kiseldioxid
JPS52156580A (en) Semiconductor integrated circuit device and its production
ATE143175T1 (de) Dünnschicht-halbleiterbauelement
JPS5441681A (en) Manufacture for high frequency transistor
HK48090A (en) Semiconductor device and method of fabrication thereof
JPS55117254A (en) Fabrication of electronic device
JPS57164571A (en) Semiconductro integrated circuit device
JPS5283073A (en) Production of semiconductor device
JPS5773961A (en) Semiconductor device
JPS57109372A (en) Semiconductor device
JPS5593268A (en) Manufacture of semiconductor device
JPS5417677A (en) Manufacture of semiconductor
JPS57130427A (en) Etching
JPS546775A (en) Semiconductor device featuring stepped electrode structure
TW344094B (en) An integrated complex-transition metal oxide device and a method of fabricating such a device
JPS5397791A (en) Production of semiconductor integrated circuit device
JPS5643757A (en) Gallium arsenic type integrated circuit
EP0459700A3 (en) Wiring forming method for semiconducteur device

Legal Events

Date Code Title Description
NR Patent deemed never to have been added to the register under section 13(7) of patents (transitional arrangements) rules