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A method for the fabrication of an integrated device, which comprises the following steps: forming a layer of a complex-transition metal oxide film on a native substrate under necessary conditions capable of providing film characteristics required for the fabrication of the integrated device; transferring the film to a transfer substrate under selected conditions which can avoid degradation of the components of the transfer substrate; and removing the native substrate.
TW086104733A1996-04-121997-04-12An integrated complex-transition metal oxide device and a method of fabricating such a device
TW344094B
(en)