TW355836B - Sputtering methods for forming metal interconnect lines in semiconductor devices - Google Patents

Sputtering methods for forming metal interconnect lines in semiconductor devices

Info

Publication number
TW355836B
TW355836B TW086111997A TW86111997A TW355836B TW 355836 B TW355836 B TW 355836B TW 086111997 A TW086111997 A TW 086111997A TW 86111997 A TW86111997 A TW 86111997A TW 355836 B TW355836 B TW 355836B
Authority
TW
Taiwan
Prior art keywords
interconnect lines
semiconductor devices
metal interconnect
forming metal
metal
Prior art date
Application number
TW086111997A
Other languages
Chinese (zh)
Inventor
Eiju Den
Original Assignee
Samsung Electron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electron Co Ltd filed Critical Samsung Electron Co Ltd
Application granted granted Critical
Publication of TW355836B publication Critical patent/TW355836B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A method for forming interconnect lines for a microelectronic device comprises depositing a metal-containing film on a microelectronic substrate at a temperature ranging from about 25 DEG C to less than about 150 DEG C; then heating the metal-containing film to a temperature ranging from about 70 percent to about 90 percent of the melting point of the metal in the metal-containing film; and then heating the metal-containing film to a temperature higher than employed in the first heating step.
TW086111997A 1996-12-06 1997-08-21 Sputtering methods for forming metal interconnect lines in semiconductor devices TW355836B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960062463A KR100213447B1 (en) 1996-12-06 1996-12-06 Method for forming metal interconnector of semiconductor device

Publications (1)

Publication Number Publication Date
TW355836B true TW355836B (en) 1999-04-11

Family

ID=19486207

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086111997A TW355836B (en) 1996-12-06 1997-08-21 Sputtering methods for forming metal interconnect lines in semiconductor devices

Country Status (3)

Country Link
JP (1) JPH10172923A (en)
KR (1) KR100213447B1 (en)
TW (1) TW355836B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9287207B2 (en) 2003-09-23 2016-03-15 Micron Technology, Inc. Methods for forming conductive vias in semiconductor device components

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002319550A (en) * 2001-04-23 2002-10-31 Sony Corp Forming method for metal film and manufacturing method for semiconductor device
KR20030002787A (en) * 2001-06-29 2003-01-09 주식회사 하이닉스반도체 Method for forming the metal plug of semiconductor device
KR100753468B1 (en) * 2005-03-11 2007-08-31 삼성전기주식회사 Wiring material, wiring substrate and process for forming wiring substrate
KR20120049477A (en) * 2010-11-09 2012-05-17 에스케이하이닉스 주식회사 Metal line forming method of semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9287207B2 (en) 2003-09-23 2016-03-15 Micron Technology, Inc. Methods for forming conductive vias in semiconductor device components

Also Published As

Publication number Publication date
KR19980044376A (en) 1998-09-05
KR100213447B1 (en) 1999-08-02
JPH10172923A (en) 1998-06-26

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees