HK134996A - A method of manufacturing optical semiconductor structures - Google Patents

A method of manufacturing optical semiconductor structures

Info

Publication number
HK134996A
HK134996A HK134996A HK134996A HK134996A HK 134996 A HK134996 A HK 134996A HK 134996 A HK134996 A HK 134996A HK 134996 A HK134996 A HK 134996A HK 134996 A HK134996 A HK 134996A
Authority
HK
Hong Kong
Prior art keywords
optical semiconductor
semiconductor structures
manufacturing optical
manufacturing
structures
Prior art date
Application number
HK134996A
Other languages
English (en)
Inventor
Andrew W Nelson
Richard E Hobbs
John W Devlin
Charles G D Lenton
Original Assignee
British Telecomm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Telecomm filed Critical British Telecomm
Publication of HK134996A publication Critical patent/HK134996A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)
  • Led Devices (AREA)
  • Semiconductor Memories (AREA)
HK134996A 1985-07-03 1996-07-25 A method of manufacturing optical semiconductor structures HK134996A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB858516853A GB8516853D0 (en) 1985-07-03 1985-07-03 Manufacture of semiconductor structures
PCT/GB1986/000387 WO1987000348A1 (en) 1985-07-03 1986-07-03 Semiconductor structures and a method of manufacturing semiconductor structures

Publications (1)

Publication Number Publication Date
HK134996A true HK134996A (en) 1996-08-02

Family

ID=10581741

Family Applications (1)

Application Number Title Priority Date Filing Date
HK134996A HK134996A (en) 1985-07-03 1996-07-25 A method of manufacturing optical semiconductor structures

Country Status (9)

Country Link
US (2) US4864581A (ja)
EP (1) EP0227783B1 (ja)
JP (2) JP2547001B2 (ja)
CA (1) CA1261483A (ja)
DE (1) DE3689067T2 (ja)
ES (1) ES2000643A6 (ja)
GB (1) GB8516853D0 (ja)
HK (1) HK134996A (ja)
WO (1) WO1987000348A1 (ja)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8622767D0 (en) * 1986-09-22 1986-10-29 British Telecomm Semiconductor structures
US5145807A (en) * 1988-05-11 1992-09-08 Mitsubishi Kasei Corporation Method of making semiconductor laser devices
US5045496A (en) * 1988-05-13 1991-09-03 Rockwell International Corporation Semi-insulating cobalt doped indium phosphide grown by MOCVD
US5111469A (en) * 1989-08-15 1992-05-05 Sony Corporation Semiconductor laser
JP2827326B2 (ja) * 1989-09-27 1998-11-25 住友電気工業株式会社 半導体レーザの製造方法
DE3934998A1 (de) * 1989-10-20 1991-04-25 Standard Elektrik Lorenz Ag Elektrisch wellenlaengenabstimmbarer halbleiterlaser
US5179040A (en) * 1990-07-16 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor laser device
JPH0474488A (ja) * 1990-07-16 1992-03-09 Mitsubishi Electric Corp 半導体レーザ装置およびその製造方法
JP3108183B2 (ja) * 1992-02-10 2000-11-13 古河電気工業株式会社 半導体レーザ素子とその製造方法
US5307357A (en) * 1992-11-05 1994-04-26 International Business Machines Corporation Protection means for ridge waveguide laser structures using thick organic films
JPH0722691A (ja) * 1993-06-30 1995-01-24 Mitsubishi Electric Corp 半導体レーザとその製造方法
JP2960838B2 (ja) * 1993-07-30 1999-10-12 シャープ株式会社 半導体装置及びその製造方法
US5721751A (en) * 1993-10-28 1998-02-24 Nippon Telegraph & Telephone Corporation Semiconductor laser
JP2718901B2 (ja) * 1994-10-31 1998-02-25 ローム株式会社 半導体装置の製造方法
US5663976A (en) * 1995-10-16 1997-09-02 Northwestern University Buried-ridge laser device
SE9700931D0 (sv) * 1997-03-14 1997-03-14 Ericsson Telefon Ab L M Buried heterostructure laser
US6141365A (en) * 1997-12-31 2000-10-31 Lasertron Semiconductor laser with kink suppression layer
JP3535002B2 (ja) * 1998-02-09 2004-06-07 日本電信電話株式会社 半導体レ―ザの良否判別法
US6294440B1 (en) * 1998-04-10 2001-09-25 Sharp Kabushiki Kaisha Semiconductor substrate, light-emitting device, and method for producing the same
US6365968B1 (en) 1998-08-07 2002-04-02 Corning Lasertron, Inc. Polyimide/silicon oxide bi-layer for bond pad parasitic capacitance control in semiconductor electro-optical device
US7431923B2 (en) * 2005-01-03 2008-10-07 Arius Research Inc. Cytotoxicity mediation of cells evidencing surface expression of CD63
US7442777B2 (en) * 2000-11-29 2008-10-28 Arius Research Inc. Cytotoxicity mediation of cells evidencing surface expression of CD63
JP4627132B2 (ja) * 2001-09-13 2011-02-09 シャープ株式会社 半導体レーザ装置および光ディスク記録再生装置
JP2003234541A (ja) * 2001-12-07 2003-08-22 Furukawa Electric Co Ltd:The 分布帰還型半導体レーザ素子
US7494919B2 (en) * 2005-01-12 2009-02-24 International Business Machines Corporation Method for post lithographic critical dimension shrinking using thermal reflow process
JP4853008B2 (ja) * 2005-12-14 2012-01-11 住友電気工業株式会社 半導体光素子を作製する方法
JP5653609B2 (ja) * 2008-12-01 2015-01-14 古河電気工業株式会社 光半導体装置、光ファイバ増幅器用励起光源及び光半導体装置の製造方法
US20150037923A1 (en) * 2012-01-06 2015-02-05 1366 Technologies, Inc. Methods to selectively treat portions of a surface using a self-registering mask
US20210273414A1 (en) * 2018-07-31 2021-09-02 Mitsubishi Electric Corporation Method for manufacturing semiconductor laser device, and semiconductor laser device
US20210344172A1 (en) * 2018-11-19 2021-11-04 Mitsubishi Electric Corporation Optical semiconductor device and method of manufacturing optical semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4425650A (en) * 1980-04-15 1984-01-10 Nippon Electric Co., Ltd. Buried heterostructure laser diode
GB2115608B (en) * 1982-02-24 1985-10-30 Plessey Co Plc Semi-conductor lasers
US4468850A (en) * 1982-03-29 1984-09-04 Massachusetts Institute Of Technology GaInAsP/InP Double-heterostructure lasers
JPS5957486A (ja) * 1982-09-27 1984-04-03 Nec Corp 埋め込み形半導体レ−ザ
JPS59129486A (ja) * 1983-01-14 1984-07-25 Toshiba Corp 半導体レーザ装置の製造方法
US4566171A (en) * 1983-06-20 1986-01-28 At&T Bell Laboratories Elimination of mask undercutting in the fabrication of InP/InGaAsP BH devices
JPS6062180A (ja) * 1983-09-16 1985-04-10 Oki Electric Ind Co Ltd 半導体発光素子

Also Published As

Publication number Publication date
DE3689067D1 (de) 1993-10-28
DE3689067T2 (de) 1994-04-28
GB8516853D0 (en) 1985-08-07
US4935936A (en) 1990-06-19
JP2935415B2 (ja) 1999-08-16
JP2547001B2 (ja) 1996-10-23
ES2000643A6 (es) 1988-03-16
EP0227783A1 (en) 1987-07-08
JPH09186402A (ja) 1997-07-15
WO1987000348A1 (en) 1987-01-15
CA1261483A (en) 1989-09-26
JPS63500279A (ja) 1988-01-28
EP0227783B1 (en) 1993-09-22
US4864581A (en) 1989-09-05

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Legal Events

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PF Patent in force
PE Patent expired

Effective date: 20060702