HK1179664A1 - 碳化硅薄膜的成膜方法 - Google Patents

碳化硅薄膜的成膜方法

Info

Publication number
HK1179664A1
HK1179664A1 HK13106615.7A HK13106615A HK1179664A1 HK 1179664 A1 HK1179664 A1 HK 1179664A1 HK 13106615 A HK13106615 A HK 13106615A HK 1179664 A1 HK1179664 A1 HK 1179664A1
Authority
HK
Hong Kong
Prior art keywords
thin film
silicon carbide
forming silicon
carbide thin
forming
Prior art date
Application number
HK13106615.7A
Other languages
English (en)
Inventor
菅原卓哉
青島光
姜友松
鹽野郎
長江亦周
Original Assignee
新柯隆株式會社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 新柯隆株式會社 filed Critical 新柯隆株式會社
Publication of HK1179664A1 publication Critical patent/HK1179664A1/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0073—Reactive sputtering by exposing the substrates to reactive gases intermittently
    • C23C14/0078—Reactive sputtering by exposing the substrates to reactive gases intermittently by moving the substrates between spatially separate sputtering and reaction stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0635—Carbides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Physical Vapour Deposition (AREA)
HK13106615.7A 2011-08-02 2013-06-05 碳化硅薄膜的成膜方法 HK1179664A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2011/067644 WO2013018192A1 (ja) 2011-08-02 2011-08-02 炭化珪素薄膜の成膜方法

Publications (1)

Publication Number Publication Date
HK1179664A1 true HK1179664A1 (zh) 2013-10-04

Family

ID=46243802

Family Applications (1)

Application Number Title Priority Date Filing Date
HK13106615.7A HK1179664A1 (zh) 2011-08-02 2013-06-05 碳化硅薄膜的成膜方法

Country Status (7)

Country Link
US (1) US9157146B2 (zh)
EP (1) EP2740815B1 (zh)
JP (1) JP4919367B1 (zh)
KR (1) KR20130071415A (zh)
CN (1) CN103038387B (zh)
HK (1) HK1179664A1 (zh)
WO (1) WO2013018192A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9663374B2 (en) * 2011-04-21 2017-05-30 The United States Of America, As Represented By The Secretary Of The Navy Situ grown SiC coatings on carbon materials
JP2016148098A (ja) * 2015-02-13 2016-08-18 株式会社神戸製鋼所 降伏比と加工性に優れた超高強度鋼板
EP3455660A4 (en) * 2016-06-13 2020-02-19 Viavi Solutions Inc. PROTECTED ITEM WITH A PROTECTIVE LAYER
KR102194949B1 (ko) * 2018-04-20 2020-12-24 신크론 컴퍼니 리미티드 반응성 스패터 장치 및 이를 이용한 복합 금속 화합물 또는 혼합막의 성막 방법
CN109830419B (zh) * 2019-01-24 2020-05-19 中国原子能科学研究院 一种微型潘宁离子源
JP7313308B2 (ja) * 2019-04-25 2023-07-24 芝浦メカトロニクス株式会社 成膜装置及び成膜方法
US11505866B2 (en) * 2019-04-25 2022-11-22 Shibaura Mechatronics Corporation Film formation apparatus and film formation method
DE102020202567A1 (de) * 2020-02-28 2021-09-02 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren und Vorrichtung zum Beschichten einer tribologisch hochbelasteten Oberfläche eines metallischen Bauteils
JP7111380B2 (ja) * 2020-04-01 2022-08-02 株式会社シンクロン スパッタ装置及びこれを用いた成膜方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4720443A (en) * 1984-04-05 1988-01-19 Canon Kabushiki Kaisha Member having light receiving layer with nonparallel interfaces
JPS62259480A (ja) * 1986-05-01 1987-11-11 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
US4834856A (en) * 1988-01-21 1989-05-30 Wehner Gottfried K Method and apparatus for sputtering a superconductor onto a substrate
JP2832385B2 (ja) 1990-03-19 1998-12-09 株式会社高純度化学研究所 シリコン系薄膜の形成方法
AU632241B2 (en) * 1990-09-06 1992-12-17 Mitsui Toatsu Chemicals Inc. Amorphous silicon solar cell and method for manufacturing the same
US5320984A (en) 1990-12-21 1994-06-14 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor film by sputter deposition in a hydrogen atmosphere
JP3386436B2 (ja) * 1990-12-21 2003-03-17 株式会社半導体エネルギー研究所 半導体膜の作製方法
US5419783A (en) * 1992-03-26 1995-05-30 Sanyo Electric Co., Ltd. Photovoltaic device and manufacturing method therefor
US5374412A (en) * 1992-07-31 1994-12-20 Cvd, Inc. Highly polishable, highly thermally conductive silicon carbide
TW337513B (en) 1992-11-23 1998-08-01 Cvd Inc Chemical vapor deposition-produced silicon carbide having improved properties and preparation process thereof
FR2699164B1 (fr) * 1992-12-11 1995-02-24 Saint Gobain Vitrage Int Procédé de traitement de couches minces à base d'oxyde ou de nitrure métallique.
JP3735462B2 (ja) 1998-03-30 2006-01-18 株式会社シンクロン 金属酸化物光学薄膜の形成方法および成膜装置
US6103320A (en) 1998-03-05 2000-08-15 Shincron Co., Ltd. Method for forming a thin film of a metal compound by vacuum deposition
JP2000239827A (ja) 1998-12-22 2000-09-05 Bridgestone Corp 積層構造体及びその製造方法
US20060189046A1 (en) 2003-06-03 2006-08-24 Yizhou Song Thin film forming method and forming device therefor
JP2005060765A (ja) * 2003-08-12 2005-03-10 Yamaguchi Prefecture 硬質皮膜とその製造方法
JP2010095431A (ja) 2008-10-20 2010-04-30 Toyota Motor Corp ＳｉＣ薄膜形成装置

Also Published As

Publication number Publication date
CN103038387B (zh) 2015-05-27
CN103038387A (zh) 2013-04-10
KR20130071415A (ko) 2013-06-28
EP2740815A4 (en) 2015-06-03
WO2013018192A1 (ja) 2013-02-07
US20140205844A1 (en) 2014-07-24
US9157146B2 (en) 2015-10-13
EP2740815B1 (en) 2016-04-13
EP2740815A1 (en) 2014-06-11
JP4919367B1 (ja) 2012-04-18
JPWO2013018192A1 (ja) 2015-03-02

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20190802