SG11201402935XA - Method for measuring film thickness distribution - Google Patents

Method for measuring film thickness distribution

Info

Publication number
SG11201402935XA
SG11201402935XA SG11201402935XA SG11201402935XA SG11201402935XA SG 11201402935X A SG11201402935X A SG 11201402935XA SG 11201402935X A SG11201402935X A SG 11201402935XA SG 11201402935X A SG11201402935X A SG 11201402935XA SG 11201402935X A SG11201402935X A SG 11201402935XA
Authority
SG
Singapore
Prior art keywords
film thickness
thickness distribution
measuring film
measuring
distribution
Prior art date
Application number
SG11201402935XA
Inventor
Susumu Kuwabara
Original Assignee
Shinetsu Handotai Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Handotai Kk filed Critical Shinetsu Handotai Kk
Publication of SG11201402935XA publication Critical patent/SG11201402935XA/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G01B11/0633—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection using one or more discrete wavelengths
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
SG11201402935XA 2011-12-28 2012-11-27 Method for measuring film thickness distribution SG11201402935XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011287397A JP5660026B2 (en) 2011-12-28 2011-12-28 Film thickness distribution measurement method
PCT/JP2012/007580 WO2013099107A1 (en) 2011-12-28 2012-11-27 Method for measuring film thickness distribution

Publications (1)

Publication Number Publication Date
SG11201402935XA true SG11201402935XA (en) 2014-09-26

Family

ID=48696657

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201402935XA SG11201402935XA (en) 2011-12-28 2012-11-27 Method for measuring film thickness distribution

Country Status (8)

Country Link
US (1) US9279665B2 (en)
EP (1) EP2799808B1 (en)
JP (1) JP5660026B2 (en)
KR (1) KR101890663B1 (en)
CN (1) CN104011499B (en)
SG (1) SG11201402935XA (en)
TW (1) TWI477735B (en)
WO (1) WO2013099107A1 (en)

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US10955359B2 (en) * 2013-11-12 2021-03-23 International Business Machines Corporation Method for quantification of process non uniformity using model-based metrology
US9391163B2 (en) 2014-10-03 2016-07-12 International Business Machines Corporation Stacked planar double-gate lamellar field-effect transistor
JP2016114506A (en) * 2014-12-16 2016-06-23 信越半導体株式会社 Evaluation method of wafer with thin film
CN104952758B (en) * 2015-06-30 2018-03-06 华灿光电(苏州）有限公司 A kind of detection method and device of membrane uniformity
EP3124912B1 (en) 2015-07-30 2019-01-16 Unity Semiconductor GmbH Method and assembly for determining the thickness of a layer in a stack of layers
US10132612B2 (en) * 2015-07-30 2018-11-20 Hseb Dresden Gmbh Method and assembly for determining the thickness of a layer in a sample stack
EP3150959B1 (en) 2015-10-02 2018-12-26 Soitec Method for measuring thickness variations in a layer of a multilayer semiconductor structure
JP2017125782A (en) * 2016-01-14 2017-07-20 信越半導体株式会社 Method for measuring film thickness distribution of wafer with thin film
JP6842851B2 (en) * 2016-07-13 2021-03-17 株式会社荏原製作所 Film thickness measuring device, polishing device, film thickness measuring method, and polishing method
EP3346229B1 (en) 2017-01-09 2022-03-30 Unity Semiconductor GmbH Method and assembly for determining the thickness of layers in a sample stack
US10989652B2 (en) * 2017-09-06 2021-04-27 Lam Research Corporation Systems and methods for combining optical metrology with mass metrology
WO2019087848A1 (en) * 2017-11-01 2019-05-09 コニカミノルタ株式会社 Film thickness measurement method, film thickness measurement system, method for manufacturing light reflection film, and light reflection film manufacturing system
JP6487579B1 (en) * 2018-01-09 2019-03-20 浜松ホトニクス株式会社 Film thickness measuring apparatus, film thickness measuring method, film thickness measuring program, and recording medium for recording film thickness measuring program
US11226191B2 (en) * 2018-06-27 2022-01-18 Tokyo Electron Limited Film thickness measurement device and correction method
CN111412843B (en) * 2020-04-14 2020-12-08 新磊半导体科技（苏州）有限公司 Method for measuring thickness of film layer in semiconductor epitaxial wafer
US20230169643A1 (en) * 2021-11-30 2023-06-01 Applied Materials, Inc. Monitoring of deposited or etched film thickness using image-based mass distribution metrology

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US499508A (en) * 1893-06-13 John c
JPH0731050B2 (en) * 1988-12-29 1995-04-10 オリンパス光学工業株式会社 Optical film thickness measuring device
JP2840181B2 (en) * 1993-08-20 1998-12-24 大日本スクリーン製造株式会社 Method for measuring film thickness of multilayer film sample
US5555472A (en) * 1993-12-22 1996-09-10 Integrated Process Equipment Corp. Method and apparatus for measuring film thickness in multilayer thin film stack by comparison to a reference library of theoretical signatures
JP3624476B2 (en) 1995-07-17 2005-03-02 セイコーエプソン株式会社 Manufacturing method of semiconductor laser device
JP3764794B2 (en) * 1997-03-06 2006-04-12 松下電器産業株式会社 Multilayer thin film thickness measuring method, optical information recording medium manufacturing method and manufacturing apparatus
US5883720A (en) * 1996-06-26 1999-03-16 Matsushita Electric Industrial Co., Ltd. Method of measuring a film thickness of multilayer thin film
JP3858101B2 (en) * 1997-05-01 2006-12-13 東セロ株式会社 Stretched film manufacturing equipment and manufacturing method
JPH1186350A (en) * 1997-09-03 1999-03-30 Ricoh Co Ltd Method for inspecting optical recording medium
JPH11160028A (en) * 1997-11-27 1999-06-18 Dainippon Screen Mfg Co Ltd Film thickness measuring apparatus and film thickness measuring method
JP3946470B2 (en) * 2001-03-12 2007-07-18 株式会社デンソー Method for measuring thickness of semiconductor layer and method for manufacturing semiconductor substrate
US7330279B2 (en) * 2002-07-25 2008-02-12 Timbre Technologies, Inc. Model and parameter selection for optical metrology
US7092110B2 (en) * 2002-07-25 2006-08-15 Timbre Technologies, Inc. Optimized model and parameter selection for optical metrology
US7126700B2 (en) * 2003-12-12 2006-10-24 Timbre Technologies, Inc. Parametric optimization of optical metrology model
JP4216209B2 (en) 2004-03-04 2009-01-28 大日本スクリーン製造株式会社 Film thickness measuring method and apparatus
TWI290614B (en) 2006-04-21 2007-12-01 Advance Design Technology Inc A measuring apparatus for the thin film thickness using interference technology of laser
JP5309359B2 (en) 2008-06-20 2013-10-09 大塚電子株式会社 Film thickness measuring apparatus and film thickness measuring method
JP5444823B2 (en) 2009-05-01 2014-03-19 信越半導体株式会社 SOI wafer inspection method
CN101709952B (en) 2009-12-04 2011-06-22 中国科学院上海技术物理研究所 Non-contact type wafer thickness measuring device and method
JP5365581B2 (en) 2010-05-28 2013-12-11 信越半導体株式会社 Evaluation method of wafer with thin film

Also Published As

Publication number Publication date
EP2799808A4 (en) 2015-08-05
KR20140107332A (en) 2014-09-04
EP2799808A1 (en) 2014-11-05
US20140293295A1 (en) 2014-10-02
TWI477735B (en) 2015-03-21
KR101890663B1 (en) 2018-08-22
CN104011499A (en) 2014-08-27
JP2013137205A (en) 2013-07-11
US9279665B2 (en) 2016-03-08
WO2013099107A1 (en) 2013-07-04
JP5660026B2 (en) 2015-01-28
EP2799808B1 (en) 2016-08-31
TW201337206A (en) 2013-09-16
CN104011499B (en) 2016-08-24

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