SG10201604044UA - Method of transferring thin films - Google Patents
Method of transferring thin filmsInfo
- Publication number
- SG10201604044UA SG10201604044UA SG10201604044UA SG10201604044UA SG10201604044UA SG 10201604044U A SG10201604044U A SG 10201604044UA SG 10201604044U A SG10201604044U A SG 10201604044UA SG 10201604044U A SG10201604044U A SG 10201604044UA SG 10201604044U A SG10201604044U A SG 10201604044UA
- Authority
- SG
- Singapore
- Prior art keywords
- thin films
- transferring thin
- transferring
- films
- thin
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/02—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
- B32B37/025—Transfer laminating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161489021P | 2011-05-23 | 2011-05-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201604044UA true SG10201604044UA (en) | 2016-07-28 |
Family
ID=47217517
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2013086699A SG195119A1 (en) | 2011-05-23 | 2012-05-23 | Method of transferring thin films |
| SG10201604044UA SG10201604044UA (en) | 2011-05-23 | 2012-05-23 | Method of transferring thin films |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2013086699A SG195119A1 (en) | 2011-05-23 | 2012-05-23 | Method of transferring thin films |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10723112B2 (en) |
| EP (1) | EP2715778B1 (en) |
| JP (1) | JP6206729B2 (en) |
| CN (1) | CN103620733B (en) |
| SG (2) | SG195119A1 (en) |
| WO (1) | WO2012161660A1 (en) |
Families Citing this family (58)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG195119A1 (en) | 2011-05-23 | 2013-12-30 | Univ Singapore | Method of transferring thin films |
| US8969154B2 (en) * | 2011-08-23 | 2015-03-03 | Micron Technology, Inc. | Methods for fabricating semiconductor device structures and arrays of vertical transistor devices |
| US20140065359A1 (en) * | 2012-08-30 | 2014-03-06 | Jawaharial Nehru Centre for Advanced Scientific Researc | Graphene ribbons and methods for their preparation and use |
| TW201428787A (en) * | 2012-12-19 | 2014-07-16 | Basf Se | Graphene-based in-plane super capacitors |
| CN103111122B (en) * | 2013-01-21 | 2014-10-08 | 苏州经贸职业技术学院 | Porous adsorption film and preparation method thereof |
| KR102036110B1 (en) * | 2013-02-22 | 2019-10-24 | 엘지전자 주식회사 | Growing substrate having heterostructure, nitride semiconductor device and method for manufacturing the same |
| WO2014134524A1 (en) * | 2013-03-01 | 2014-09-04 | Massachusetts Institute Of Technology | Synthesis of transition metal disulfide layers |
| US20150060768A1 (en) * | 2013-08-13 | 2015-03-05 | The Board Of Regents Of The University Of Texas System | Method to improve performance characteristics of transistors comprising graphene and other two-dimensional materials |
| JP2017521850A (en) | 2014-04-23 | 2017-08-03 | ザ トラスティーズ オブ ザ ユニバーシティ オブ ペンシルバニア | Expandable, printable, high mobility graphene sheets on patterned flexible substrates |
| CN103964422A (en) * | 2014-04-25 | 2014-08-06 | 无锡格菲电子薄膜科技有限公司 | Graphene transferring method |
| EP2985645B1 (en) * | 2014-08-13 | 2019-10-16 | Caliopa NV | Method for producing an integrated optical circuit |
| US9431565B2 (en) * | 2014-10-23 | 2016-08-30 | William Marsh Rice University | Charge coupled device based on atomically layered van der waals solid state film for opto-electronic memory and image capture |
| KR102412965B1 (en) * | 2014-12-30 | 2022-06-24 | 삼성전자주식회사 | Electronic device having two dimensional material layer and method of manufacturing the electronic device using inkjet printing |
| US9493025B2 (en) * | 2015-01-19 | 2016-11-15 | International Business Machines Corporation | Graphene layers for identification of products |
| CN104532209B (en) * | 2015-01-27 | 2017-12-29 | 厦门大学 | A kind of method that wafer scale large scale hexagonal boron nitride is prepared in substrate |
| CN106190051A (en) * | 2015-05-05 | 2016-12-07 | 赖中平 | The Graphene stack membrane of tool thermal conductance |
| CN104947070B (en) * | 2015-06-01 | 2018-03-02 | 深圳大学 | The preparation method and molybdenum disulfide film of a kind of molybdenum disulfide film |
| KR101709704B1 (en) | 2015-07-01 | 2017-03-08 | 한국과학기술연구원 | Transfer method of materials by using petroleum jelly |
| MA42906A (en) * | 2015-07-10 | 2018-05-16 | De La Rue Int Ltd | METHOD OF MANUFACTURING A PATTERN IN OR ON A SUPPORT |
| KR101703653B1 (en) | 2015-07-27 | 2017-02-07 | 이형석 | Light diffusing sheet |
| CN105070347B (en) * | 2015-08-17 | 2017-07-11 | 中国科学院上海微系统与信息技术研究所 | It is a kind of that device architecture of contact electrode and preparation method thereof is used as using graphene |
| US20200223206A1 (en) * | 2015-09-11 | 2020-07-16 | Spectral Devices Inc. | Methods for production and transfer of patterned thin films at wafer-scale |
| US10580679B2 (en) | 2015-09-22 | 2020-03-03 | The University Of Massachusetts | Method of transfer printing and articles manufactured therefrom |
| TWI672727B (en) * | 2015-09-25 | 2019-09-21 | 晶元光電股份有限公司 | A metal recycling equipment and a process for recycling metals on a wafer by using the same |
| CN105304832B (en) * | 2015-11-02 | 2017-07-25 | 深圳市华星光电技术有限公司 | The preparation method of electroluminescent device |
| WO2017085849A1 (en) * | 2015-11-19 | 2017-05-26 | 三井金属鉱業株式会社 | Production method for printed wiring board having dielectric layer |
| CN106904605B (en) * | 2015-12-21 | 2018-10-19 | 北京大学 | A method of the transfer graphene based on sublimed method |
| KR101870643B1 (en) * | 2016-01-28 | 2018-06-25 | 주식회사 참트론 | Graphene transfer method |
| US20170217777A1 (en) * | 2016-01-30 | 2017-08-03 | Massachusetts Institute Of Technology | Transfer Method for Two-Dimensional Film |
| CN105679678A (en) * | 2016-03-18 | 2016-06-15 | 武汉华星光电技术有限公司 | Preparation method for graphene thin film transistor |
| TWI610804B (en) * | 2016-05-23 | 2018-01-11 | 國立成功大學 | Energy-saving Glass and Method of Manufacturing the Same |
| WO2018009931A1 (en) | 2016-07-08 | 2018-01-11 | Cornell University | Transition metal chalcogenide van der waals films, methods of making same, and apparatuses and devices comprising same |
| CN106206254A (en) * | 2016-07-13 | 2016-12-07 | 合肥工业大学 | There is the preparation method of the large-area two-dimensional stratified material of excellent photoluminescence property |
| KR101897902B1 (en) * | 2017-02-27 | 2018-09-14 | 한국과학기술원 | Method for fabricating discrete nanostructures |
| CN107887319A (en) * | 2017-11-16 | 2018-04-06 | 中国科学院上海微系统与信息技术研究所 | The preparation method of graphene on a kind of insulator |
| US10586864B2 (en) | 2018-08-05 | 2020-03-10 | International Business Machines Corporation | Vertical transistor with one-dimensional edge contacts |
| US10593798B2 (en) * | 2018-08-05 | 2020-03-17 | International Business Machines Corporation | Vertical transistor with one atomic layer gate length |
| CN109103072B (en) * | 2018-08-28 | 2021-03-02 | 湘潭大学 | Transfer method of large-area single-layer and few-layer molybdenum disulfide film |
| CN109850882B (en) * | 2018-08-30 | 2020-10-16 | 中国科学院微电子研究所 | Multi-support-film-assisted graphene electrochemical transfer method |
| KR102253452B1 (en) * | 2018-10-11 | 2021-05-18 | 성균관대학교산학협력단 | Transfer method of thin films using van der waals force |
| CN111217359B (en) * | 2018-11-23 | 2023-11-07 | 中国科学院上海微系统与信息技术研究所 | Preparation method of Si-based substrate heterogeneous integrated graphene |
| US10926521B2 (en) * | 2018-12-28 | 2021-02-23 | Palo Alto Research Center Incorporated | Method and system for mass assembly of thin film materials |
| TWI703243B (en) * | 2019-01-23 | 2020-09-01 | 中原大學 | Method of forming single-crystal group-iii nitride |
| WO2020152358A1 (en) * | 2019-01-25 | 2020-07-30 | Quellmalz Arne | Method of material transfer |
| KR20220002381A (en) * | 2019-04-16 | 2022-01-06 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Pellicle adhesive, pellicle, exposure master plate with pellicle, semiconductor device manufacturing method, liquid crystal display panel manufacturing method, exposure master plate regeneration method and peeling residue reduction method |
| CN114730696A (en) * | 2019-11-15 | 2022-07-08 | 明尼苏达大学董事会 | Transfer material layer for graphene fabrication process |
| CN111086971B (en) * | 2019-12-25 | 2022-06-21 | 大连理工大学 | Transfer printing process method for flexible MEMS device |
| CN111362258A (en) * | 2020-02-12 | 2020-07-03 | 浙江大学 | Graphene film transfer method using beeswax as supporting layer |
| CN111254491B (en) * | 2020-03-19 | 2021-08-10 | 四川大学 | Preparation method of high-quality two-dimensional atomic layer film |
| JP7388666B2 (en) | 2020-06-28 | 2023-11-29 | 深▲せん▼清華大学研究院 | Atomic smooth device with microstructure and method for manufacturing the same |
| CN111933650B (en) * | 2020-07-22 | 2022-10-14 | 华中科技大学 | Molybdenum sulfide thin film imaging array device and preparation method thereof |
| US11942352B2 (en) * | 2020-08-31 | 2024-03-26 | Industry-Academic Cooperation Foundation, Yonsei University | Manufacturing method of LED display |
| CN112850658A (en) * | 2021-01-15 | 2021-05-28 | 武汉理工大学 | Method for preparing copper indium gallium selenide micro-condensation solar cell absorption layer |
| GB2603905B (en) * | 2021-02-17 | 2023-12-13 | Paragraf Ltd | A method for the manufacture of an improved graphene substrate and applications therefor |
| CN113078053B (en) * | 2021-03-25 | 2024-02-27 | 中国科学院上海微系统与信息技术研究所 | Preparation method of top gate structure and semiconductor structure |
| WO2022243895A1 (en) * | 2021-05-18 | 2022-11-24 | Mellanox Technologies, Ltd. | Process for applying a two-dimensional material to a target substrate post-lamination |
| CN114214101B (en) * | 2021-12-28 | 2022-08-12 | 山东大学 | Method for regulating friction force of molybdenum disulfide by constructing interface liquid drops |
| CN114715842B (en) * | 2022-04-07 | 2023-05-16 | 西安交通大学 | Low-dimensional material transfer medium, preparation method and transfer method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8222072B2 (en) * | 2002-12-20 | 2012-07-17 | The Trustees Of Princeton University | Methods of fabricating devices by low pressure cold welding |
| JP2006049800A (en) * | 2004-03-10 | 2006-02-16 | Seiko Epson Corp | Thin film device feeder, manufacturing method thereof, transfer method, manufacturing method of semiconductor device, and electronic machine |
| US7943491B2 (en) * | 2004-06-04 | 2011-05-17 | The Board Of Trustees Of The University Of Illinois | Pattern transfer printing by kinetic control of adhesion to an elastomeric stamp |
| US20080083484A1 (en) * | 2006-09-28 | 2008-04-10 | Graciela Beatriz Blanchet | Method to form a pattern of functional material on a substrate |
| GB0701909D0 (en) * | 2007-01-31 | 2007-03-14 | Imp Innovations Ltd | Deposition Of Organic Layers |
| US8470701B2 (en) * | 2008-04-03 | 2013-06-25 | Advanced Diamond Technologies, Inc. | Printable, flexible and stretchable diamond for thermal management |
| US8535553B2 (en) * | 2008-04-14 | 2013-09-17 | Massachusetts Institute Of Technology | Large-area single- and few-layer graphene on arbitrary substrates |
| KR101004849B1 (en) | 2008-09-02 | 2010-12-28 | 삼성전기주식회사 | Fabrication method of thin film device |
| KR20100027526A (en) * | 2008-09-02 | 2010-03-11 | 삼성전기주식회사 | Fabrication method of thin film device |
| JP2010143103A (en) * | 2008-12-19 | 2010-07-01 | Sony Corp | Transfer pattern forming blanket, transfer pattern forming method, and transfer apparatus |
| EP2430652B1 (en) * | 2009-05-12 | 2019-11-20 | The Board of Trustees of the University of Illionis | Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays |
| JP5097172B2 (en) * | 2009-06-23 | 2012-12-12 | 株式会社沖データ | Graphene layer peeling method, graphene wafer manufacturing method, and graphene element manufacturing method |
| US8753468B2 (en) * | 2009-08-27 | 2014-06-17 | The United States Of America, As Represented By The Secretary Of The Navy | Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates |
| KR101652787B1 (en) * | 2009-11-12 | 2016-09-01 | 삼성전자주식회사 | Method of fabricating large-scale graphene and transfering large-scale graphene |
| SG195119A1 (en) | 2011-05-23 | 2013-12-30 | Univ Singapore | Method of transferring thin films |
-
2012
- 2012-05-23 SG SG2013086699A patent/SG195119A1/en unknown
- 2012-05-23 WO PCT/SG2012/000182 patent/WO2012161660A1/en active Application Filing
- 2012-05-23 EP EP12788925.1A patent/EP2715778B1/en active Active
- 2012-05-23 CN CN201280031744.9A patent/CN103620733B/en active Active
- 2012-05-23 US US14/119,830 patent/US10723112B2/en active Active
- 2012-05-23 JP JP2014512797A patent/JP6206729B2/en active Active
- 2012-05-23 SG SG10201604044UA patent/SG10201604044UA/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| SG195119A1 (en) | 2013-12-30 |
| JP6206729B2 (en) | 2017-10-04 |
| EP2715778B1 (en) | 2023-06-07 |
| US20140087191A1 (en) | 2014-03-27 |
| CN103620733A (en) | 2014-03-05 |
| EP2715778A1 (en) | 2014-04-09 |
| EP2715778C0 (en) | 2023-06-07 |
| EP2715778A4 (en) | 2014-11-19 |
| CN103620733B (en) | 2018-04-24 |
| US10723112B2 (en) | 2020-07-28 |
| JP2014525134A (en) | 2014-09-25 |
| WO2012161660A1 (en) | 2012-11-29 |
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