CN103964422A - Graphene transferring method - Google Patents
Graphene transferring method Download PDFInfo
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- CN103964422A CN103964422A CN201410170159.8A CN201410170159A CN103964422A CN 103964422 A CN103964422 A CN 103964422A CN 201410170159 A CN201410170159 A CN 201410170159A CN 103964422 A CN103964422 A CN 103964422A
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Abstract
The invention discloses a graphene transferring method which comprises the following steps: (1) coating resin on a target base body, and gluing the target base body with graphene growing on a substrate; (2) removing the substrate after the resin is cured. Compared with the conventional PMMA or PDSM transferring method, the graphene transferring method has the advantages that the steps are less; the operation is simple; the cost is low; the damage on the graphene is low; the graphene is reserved more completely; sheet resistance is lower.
Description
Technical field
The invention belongs to Graphene field, be specifically related to a kind of method that Graphene is shifted to target substrate by growing substrate.
Background technology
Graphene be carbon atom by the monoatomic layer two dimensional crystal of the tightly packed one-tenth of hexagonal structure, except having the characteristics such as excellent optics, calorifics, mechanics, the current carrier of Graphene shows the behavior that is similar to photon, intrinsic mobility can reach 2 * 10
5cm
2/ (VS) (J. Appl. Phys. 2011,109,093702.).Since finding Graphene, due to machinery, electronics and the thermal stability of its excellence, Graphene is subject to people in application aspect electron device, electrode, electrical condenser, sensor and matrix material and extensively payes attention to, and becomes the popular research field in the current world.In order to realize its potential application, top priority is the defect occurring during the Graphene that how to solve chemical Vapor deposition process growth shifts, and Graphene and the problem such as target substrate sticking power is poor, affects the application of Graphene.
At present, the method of common transfer Graphene has PMMA, the methods such as PDSM, the common ground that this class shifts Graphene is first Graphene to be transferred to PMMA or PDMS above, is then transferring in target substrate, removes PMMA or PDMS, being called for short two-step approach shifts, the Graphene defect that this transfer method obtains is many, the problem that sheet resistance is higher, and sticking power is also poor in addition.
Summary of the invention
The object of the invention is to overcome the defect of existing Graphene transfer method, a kind of simple, Graphene transfer method of reducing Graphene defect is provided.
It is as follows that the present invention realizes the technical scheme that above-mentioned purpose adopts:
A Graphene transfer method, comprises the steps
(1) resin is coated in target substrate, then with the Graphene laminating being grown on substrate;
(2) after resin solidification, then remove substrate.
Further, described target substrate is for being flexible substrate or hard substrate.
Further, described flexible substrate is polyphenyl dioctyl phthalate glycol ester (PET), polycarbonate (PC), polyvinyl chloride (PVC), polyethylene (PE) or PEN (PEN).
Further, described hard substrate is silicon chip or glass.
Further, described resin is UV resin and/or thermosetting resin.
Described UV resin comprises common UV unsaturated polyester, UV epoxy acrylate, UV urethane acrylate, UV aliphatic urethane acrylate, UV aromatic urethane, UV polyester acrylate, UV polyethers propylene, UV acrylic resin, UV epoxy resin, UV silicone oligomer etc.
Described thermosetting resin comprises common heat-reactive phenolic resin, thermosetting acrylate, thermosetting epoxy resin, thermoset acrylics epoxy resin, heat-curable urethane modified acroleic acid epoxy resin, heat-curable urethane etc.
The mode of smearing resin can adopt the methods such as conventional immersion, spin coating, spraying, blade coating, silk screen printing, roller coat, nick printing.Smearing thickness is preferably 0.1-30 micron.
Resin solidification condition can be selected according to the type of concrete resin, if UV resin can be 100-10000mj/cm in intensity
2uviolizing is solidified, and thermosetting resin can solidify at 80-400 ℃.
Further, the method that step (2) is removed substrate comprises Bubbling method, etch or mechanically peel method.Described etch can be chemical corrosion method or electrochemical erosion method.
Method at Grown Graphene can adopt known prior art, as " Graphene epitaxy and device application progress thereof " Wang Lin etc., Journal of Inorganic Materials, in October, 2011, the 26th volume the 10th phase 1009-1019 page, review paper in the method for the upper growing graphene of various substrates (as SiC, Ru, Ni, Ir, Pt, Cu, Co etc.), for concrete process of growth, can, with reference to corresponding document, at this, seldom state.
Compare with existing PMMA or PDSM transfer method, the method steps that the present invention shifts Graphene is few, simple to operate, cost-saving, and Graphene is destroyed still less, and Graphene retains more integrity, significantly reduces sheet resistance, and the sticking power of Graphene and matrix is stronger.
Embodiment
Below in conjunction with embodiment, the present invention will be further described.
Embodiment 1
(1) roller coat UV aliphatic urethane acrylate (model: 3620, Zhongshan city Ke Tian Electron Material Co., Ltd) on target substrate pet sheet face, thickness 15 μ m, obtain PET/UV aliphatic urethane acrylate;
(2) adopt conventional vapour deposition process on Copper Foil after growing graphene, then growth is had to the Copper Foil spread of Graphene, obtain Copper Foil/Graphene;
(3) PET/UV aliphatic urethane acrylate is simultaneously fit together with the Graphene of Copper Foil/Graphene by UV aliphatic urethane acrylate one side;
(4) UV solidifies: 500mj/cm
2, obtain PET/UV aliphatic urethane acrylate/Graphene/Copper Foil;
(5) PET/UV aliphatic urethane acrylate/Graphene/Copper Foil is placed in to ammonium persulfate solution etching, every 3 min, take out the surface of cleaning Copper Foil with deionized water and ethanol, until Copper Foil is removed completely, finally spending ion pair cleans, hot blast drying, obtains PET/UV aliphatic urethane acrylate/Graphene, sheet resistance 260 Ω/, transmittance 88%, tears 3 times without impact with 3M adhesive tape.
Identical length has the Copper Foil substrate of graphene layer, the sheet resistance 900 Ω/ of the PET/ graphene film that employing PMMA transfer method obtains, and transmittance 88%, tears 1 time with 3M adhesive tape and peels off.
Embodiment 2
(1) on target substrate glass surface, spray thermosetting acrylic resin (model: DSM Resin A lcreset7130, Shanghai Kai Yin Chemical Co., Ltd.) thickness 5 μ m, obtain glass/thermosetting acrylic resin;
(2) adopt conventional vapour deposition process on Copper Foil after growing graphene, then growth is had to the Copper Foil spread of Graphene, obtain Copper Foil/Graphene;
(3) glass/thermosetting acrylic resin is simultaneously fit together with the Graphene of Copper Foil/Graphene by its resin one side;
(4) solidify: 80 ℃ of baking 150min, obtain glass/thermosetting acrylic resin/Graphene/Copper Foil;
(5) (Bubbling method is that prior art is seldom introduced at this to adopt Bubbling method, as " the transfer techniques progress of chemical Vapor deposition process synthesizing graphite alkene " Huang Man etc., chemistry circular, o. 11th in 2012) remove the substrate Copper Foil of glass/thermosetting acrylic resin/Graphene/Copper Foil, obtain glass/thermosetting acrylic resin/Graphene, sheet resistance 265 Ω/, transmittance 88%, tears 3 times without impact with 3M adhesive tape.
Identical length has the Copper Foil substrate of graphene layer, the sheet resistance 1000 Ω/ of glass/graphene film that employing PDMS transfer method obtains, and transmittance 88%, tears 1 time with 3M adhesive tape and peels off.
Claims (7)
1. a Graphene transfer method, comprises the steps
(1) resin is coated in target substrate, then with the Graphene laminating being grown on substrate;
(2) after resin solidification, then remove substrate.
2. Graphene transfer method according to claim 1, is characterized in that, described resin is UV resin and/or thermosetting resin.
3. Graphene transfer method according to claim 2, is characterized in that, described resin thickness is 0.1-30 micron.
4. Graphene transfer method according to claim 1, is characterized in that, described target substrate is for being flexible substrate or hard substrate.
5. Graphene transfer method according to claim 4, is characterized in that, described flexible substrate is polyphenyl dioctyl phthalate glycol ester, polycarbonate, polyvinyl chloride, polyethylene or PEN.
6. Graphene transfer method according to claim 4, is characterized in that, described hard substrate is silicon chip or glass.
7. Graphene transfer method according to claim 1, is characterized in that, the method that step (2) is removed substrate comprises Bubbling method, etch or mechanically peel method.
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| CN201410170159.8A CN103964422A (en) | 2014-04-25 | 2014-04-25 | Graphene transferring method |
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| CN201410170159.8A CN103964422A (en) | 2014-04-25 | 2014-04-25 | Graphene transferring method |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104528699A (en) * | 2014-12-22 | 2015-04-22 | 中国科学院重庆绿色智能技术研究院 | Stable doping method for graphene thin film |
| CN105563919A (en) * | 2015-12-24 | 2016-05-11 | 无锡格菲电子薄膜科技有限公司 | Storable graphene membrane and preparation method thereof |
| CN106113732A (en) * | 2016-06-23 | 2016-11-16 | 无锡格菲电子薄膜科技有限公司 | A kind of preparation method of Graphene resin film |
| CN106744865A (en) * | 2016-12-01 | 2017-05-31 | 无锡格菲电子薄膜科技有限公司 | A kind of laser donor membrane and preparation method thereof, the method using laser donor film transfer graphene film |
| CN108609615A (en) * | 2018-07-30 | 2018-10-02 | 合肥工业大学 | A kind of transfer method of uniform graphene film |
| CN109748266A (en) * | 2017-11-02 | 2019-05-14 | 律胜科技股份有限公司 | Multi-layer graphene soft board transfer method and graphene soft board group |
| CN111547708A (en) * | 2020-04-02 | 2020-08-18 | 清华大学 | Preparation method of ultra-smooth thickness-controllable large-size graphene coating |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104528699A (en) * | 2014-12-22 | 2015-04-22 | 中国科学院重庆绿色智能技术研究院 | Stable doping method for graphene thin film |
| CN104528699B (en) * | 2014-12-22 | 2016-05-11 | 中国科学院重庆绿色智能技术研究院 | A kind of stable doping method of graphene film |
| CN105563919A (en) * | 2015-12-24 | 2016-05-11 | 无锡格菲电子薄膜科技有限公司 | Storable graphene membrane and preparation method thereof |
| CN106113732A (en) * | 2016-06-23 | 2016-11-16 | 无锡格菲电子薄膜科技有限公司 | A kind of preparation method of Graphene resin film |
| CN106113732B (en) * | 2016-06-23 | 2018-07-06 | 无锡格菲电子薄膜科技有限公司 | A kind of preparation method of graphene resin film |
| CN106744865A (en) * | 2016-12-01 | 2017-05-31 | 无锡格菲电子薄膜科技有限公司 | A kind of laser donor membrane and preparation method thereof, the method using laser donor film transfer graphene film |
| CN106744865B (en) * | 2016-12-01 | 2019-04-30 | 无锡第六元素电子薄膜科技有限公司 | A kind of laser donor membrane and preparation method thereof utilizes the method for laser donor film transfer graphene film |
| CN109748266A (en) * | 2017-11-02 | 2019-05-14 | 律胜科技股份有限公司 | Multi-layer graphene soft board transfer method and graphene soft board group |
| CN109748266B (en) * | 2017-11-02 | 2022-05-31 | 律胜科技股份有限公司 | Transfer printing method for multilayer graphene soft board and graphene soft board group |
| CN108609615A (en) * | 2018-07-30 | 2018-10-02 | 合肥工业大学 | A kind of transfer method of uniform graphene film |
| CN108609615B (en) * | 2018-07-30 | 2021-06-08 | 合肥工业大学 | Transfer method of uniform graphene film |
| CN111547708A (en) * | 2020-04-02 | 2020-08-18 | 清华大学 | Preparation method of ultra-smooth thickness-controllable large-size graphene coating |
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