HK1109805A1 - Means for transferring a pattern to an object - Google Patents

Means for transferring a pattern to an object

Info

Publication number
HK1109805A1
HK1109805A1 HK08103491.0A HK08103491A HK1109805A1 HK 1109805 A1 HK1109805 A1 HK 1109805A1 HK 08103491 A HK08103491 A HK 08103491A HK 1109805 A1 HK1109805 A1 HK 1109805A1
Authority
HK
Hong Kong
Prior art keywords
template
coating
pattern
waveguide
transferring
Prior art date
Application number
HK08103491.0A
Other languages
English (en)
Inventor
Marc Beck
Original Assignee
Obducat Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Obducat Ab filed Critical Obducat Ab
Publication of HK1109805A1 publication Critical patent/HK1109805A1/xx

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Optical Integrated Circuits (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
HK08103491.0A 2005-04-27 2008-03-28 Means for transferring a pattern to an object HK1109805A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP05009188 2005-04-27
EP05108066 2005-09-02
PCT/EP2006/061571 WO2006114369A2 (en) 2005-04-27 2006-04-13 Means for transferring a pattern to an object

Publications (1)

Publication Number Publication Date
HK1109805A1 true HK1109805A1 (en) 2008-06-20

Family

ID=36685650

Family Applications (1)

Application Number Title Priority Date Filing Date
HK08103491.0A HK1109805A1 (en) 2005-04-27 2008-03-28 Means for transferring a pattern to an object

Country Status (6)

Country Link
US (1) US8092959B2 (ko)
EP (1) EP1875310B1 (ko)
JP (1) JP4954197B2 (ko)
KR (1) KR101352360B1 (ko)
HK (1) HK1109805A1 (ko)
WO (1) WO2006114369A2 (ko)

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CN101221477B (zh) * 2007-01-09 2014-05-28 义隆电子股份有限公司 操作控制方法及系统
CN101960559A (zh) * 2008-03-07 2011-01-26 昭和电工株式会社 Uv纳米压印方法、树脂制复制模及其制造方法、磁记录介质及其制造方法和磁记录再生装置
NL1036787A1 (nl) * 2008-05-14 2009-11-17 Asml Holding Nv Lithographic method.
US8237133B2 (en) 2008-10-10 2012-08-07 Molecular Imprints, Inc. Energy sources for curing in an imprint lithography system
TWM402424U (en) * 2010-10-15 2011-04-21 Chunghwa Picture Tubes Ltd Constraint structure for light path
JP5774536B2 (ja) * 2012-03-30 2015-09-09 株式会社東芝 近接場露光用マスクおよびパターン形成方法
JP2014120584A (ja) * 2012-12-14 2014-06-30 Toshiba Corp インプリント用マスクの洗浄方法
US10555788B2 (en) 2014-03-28 2020-02-11 Intuitive Surgical Operations, Inc. Surgical system with haptic feedback based upon quantitative three-dimensional imaging
WO2015149040A1 (en) * 2014-03-28 2015-10-01 Dorin Panescu Quantitative three-dimensional imaging of surgical scenes
JP6609616B2 (ja) 2014-03-28 2019-11-20 インテュイティブ サージカル オペレーションズ, インコーポレイテッド マルチポートの視点からの手術シーンの定量的な3次元イメージング
US11266465B2 (en) 2014-03-28 2022-03-08 Intuitive Surgical Operations, Inc. Quantitative three-dimensional visualization of instruments in a field of view
US10350009B2 (en) 2014-03-28 2019-07-16 Intuitive Surgical Operations, Inc. Quantitative three-dimensional imaging and printing of surgical implants
US11567411B2 (en) 2018-03-27 2023-01-31 NanoPath, Inc. Maskless photolithography devices, methods, and systems
US11966163B2 (en) 2018-05-30 2024-04-23 Lg Chem, Ltd. Photomask for imprinting and manufacturing method therefor
US10754078B2 (en) * 2018-12-20 2020-08-25 Canon Kabushiki Kaisha Light source, a shaping system using the light source and an article manufacturing method
EP3963256A4 (en) * 2019-04-28 2023-06-14 LEIA Inc. METHOD FOR MAKING A DIFFRACTIVE BACKLIGHT DEVICE
CN111522206B (zh) 2020-04-29 2021-09-21 中国科学院光电技术研究所 一种基于反射式光场增强的微纳光印制造方法
US11972976B2 (en) 2021-04-29 2024-04-30 Canon Kabushiki Kaisha Planarization system, planarization process, and method of manufacturing an article

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JPH1048810A (ja) * 1996-08-05 1998-02-20 Yotaro Hatamura リソグラフィ方法
JPH1138241A (ja) * 1997-07-14 1999-02-12 Tomoegawa Paper Co Ltd フレキシブル光導波路素子及びその製造方法
WO1999015933A1 (en) * 1997-09-19 1999-04-01 International Business Machines Corporation Optical lithography beyond conventional resolution limits
US5928815A (en) * 1997-11-14 1999-07-27 Martin; Joseph Proximity masking device for near-field optical lithography
JPH11160853A (ja) * 1997-11-25 1999-06-18 Toppan Printing Co Ltd フォトマスク及びフォトマスクブランク
JPH11218901A (ja) * 1998-01-30 1999-08-10 Canon Inc エバネッセント光露光用マスク、その製造方法及びエバネッセント光露光装置
JP4346701B2 (ja) * 1998-03-25 2009-10-21 キヤノン株式会社 エバネッセント光を用いた露光方法
JPH11317346A (ja) * 1998-04-30 1999-11-16 Ebara Corp 微細パターンの形成のための装置及び方法
JPH11317345A (ja) * 1998-04-30 1999-11-16 Ebara Corp 微細パターンの転写加工方法
JP2000039702A (ja) * 1998-04-30 2000-02-08 Ebara Corp 微細パタ―ンの転写加工方法
JP2000021770A (ja) * 1998-04-30 2000-01-21 Ebara Corp 光転写装置及び方法及びマスク及びその製造方法
US6671034B1 (en) 1998-04-30 2003-12-30 Ebara Corporation Microfabrication of pattern imprinting
JP3809500B2 (ja) * 1998-10-05 2006-08-16 正喜 江刺 近接場光露光マスク及びその製造方法並びに近接場光露光装置及び近接場光露光方法
EP1001311A1 (en) 1998-11-16 2000-05-17 International Business Machines Corporation Patterning device
US6334960B1 (en) * 1999-03-11 2002-01-01 Board Of Regents, The University Of Texas System Step and flash imprint lithography
JP3743782B2 (ja) * 1999-08-30 2006-02-08 独立行政法人産業技術総合研究所 微細パターン形成用材料及びそれを用いた微細パターン形成方法
US6764367B2 (en) 2000-10-27 2004-07-20 Science Applications International Corporation Liquid manufacturing processes for panel layer fabrication
JP2003305700A (ja) * 2002-04-12 2003-10-28 Canon Inc ナノ構造体及びその製造方法
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JP4036820B2 (ja) * 2002-12-18 2008-01-23 インターナショナル・ビジネス・マシーンズ・コーポレーション サブ波長構造体の製造
JP3984935B2 (ja) * 2003-08-08 2007-10-03 キヤノン株式会社 近接場露光マスク及び近接場露光マスクの製造方法
WO2005052658A1 (de) 2003-11-19 2005-06-09 Gerster Techtex Gmbh Lichtwellenleiter-vorrichtung mit lichtaustrittsöffnungen in der manteloberfläche sowie verfahren zur herstellung derselben in einer webmaschine
US7153360B2 (en) 2003-12-16 2006-12-26 Hewlett-Packard Development Company, Lp. Template and methods for forming photonic crystals
JP4572406B2 (ja) * 2004-04-16 2010-11-04 独立行政法人理化学研究所 リソグラフィーマスク
JP4250570B2 (ja) * 2004-06-30 2009-04-08 キヤノン株式会社 近接場露光方法及びこれを用いた素子の製造方法

Also Published As

Publication number Publication date
US8092959B2 (en) 2012-01-10
EP1875310A2 (en) 2008-01-09
WO2006114369A3 (en) 2007-08-02
EP1875310B1 (en) 2013-03-06
KR20080003915A (ko) 2008-01-08
JP4954197B2 (ja) 2012-06-13
KR101352360B1 (ko) 2014-01-15
US20090317727A1 (en) 2009-12-24
JP2008539570A (ja) 2008-11-13
WO2006114369A2 (en) 2006-11-02

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20230413