HK1066833A1 - Refractory metal plates with uniform texture and methods of making the same - Google Patents

Refractory metal plates with uniform texture and methods of making the same

Info

Publication number
HK1066833A1
HK1066833A1 HK04109794A HK04109794A HK1066833A1 HK 1066833 A1 HK1066833 A1 HK 1066833A1 HK 04109794 A HK04109794 A HK 04109794A HK 04109794 A HK04109794 A HK 04109794A HK 1066833 A1 HK1066833 A1 HK 1066833A1
Authority
HK
Hong Kong
Prior art keywords
uniform texture
making
methods
same
metal plates
Prior art date
Application number
HK04109794A
Other languages
English (en)
Inventor
Peter R Jepson
Henning Uhlenhut
Prabhat Kumar
Original Assignee
Starck H C Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23029400&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=HK1066833(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Starck H C Inc filed Critical Starck H C Inc
Publication of HK1066833A1 publication Critical patent/HK1066833A1/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/02—Alloys based on vanadium, niobium, or tantalum
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C22F1/18—High-melting or refractory metals or alloys based thereon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Forging (AREA)
  • Powder Metallurgy (AREA)
  • Furnace Housings, Linings, Walls, And Ceilings (AREA)
  • Aerials With Secondary Devices (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Manufacture And Refinement Of Metals (AREA)
HK04109794A 2001-02-20 2004-12-10 Refractory metal plates with uniform texture and methods of making the same HK1066833A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US26998301P 2001-02-20 2001-02-20
PCT/US2002/005033 WO2002070765A1 (en) 2001-02-20 2002-02-20 Refractory metal plates with uniform texture and methods of making the same

Publications (1)

Publication Number Publication Date
HK1066833A1 true HK1066833A1 (en) 2005-04-01

Family

ID=23029400

Family Applications (1)

Application Number Title Priority Date Filing Date
HK04109794A HK1066833A1 (en) 2001-02-20 2004-12-10 Refractory metal plates with uniform texture and methods of making the same

Country Status (21)

Country Link
US (1) US20020112789A1 (es)
EP (1) EP1366203B1 (es)
JP (1) JP4327460B2 (es)
KR (1) KR100966682B1 (es)
CN (2) CN1789476A (es)
AT (1) ATE339532T1 (es)
AU (1) AU2002257005B2 (es)
BR (1) BR0207384A (es)
CA (1) CA2438819A1 (es)
CZ (1) CZ20032246A3 (es)
DE (1) DE60214683T2 (es)
ES (1) ES2272707T3 (es)
HK (1) HK1066833A1 (es)
HU (1) HUP0303269A3 (es)
IL (1) IL157279A0 (es)
MX (1) MXPA03007490A (es)
NO (1) NO20033547L (es)
NZ (1) NZ527628A (es)
PT (1) PT1366203E (es)
WO (1) WO2002070765A1 (es)
ZA (1) ZA200306399B (es)

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MXPA05011284A (es) * 2003-04-23 2006-01-24 Starck H C Inc Blancos de rayos x de alecion de molibdeno que tienen estructura de grano uniforme.
US7228722B2 (en) * 2003-06-09 2007-06-12 Cabot Corporation Method of forming sputtering articles by multidirectional deformation
EP1639620A2 (en) * 2003-06-20 2006-03-29 Cabot Corporation Method and design for sputter target attachment to a backing plate
US7892367B2 (en) * 2003-11-06 2011-02-22 Jx Nippon Mining & Metals Corporation Tantalum sputtering target
US20070144623A1 (en) * 2004-02-18 2007-06-28 Wickersham Charles E Jr Ultrasonic method for detecting banding in metals
US8061177B2 (en) 2004-03-26 2011-11-22 H.C. Starck Inc. Refractory metal pots
US7666243B2 (en) 2004-10-27 2010-02-23 H.C. Starck Inc. Fine grain niobium sheet via ingot metallurgy
US7998287B2 (en) 2005-02-10 2011-08-16 Cabot Corporation Tantalum sputtering target and method of fabrication
EP1880036A2 (en) * 2005-05-05 2008-01-23 H.C. Starck GmbH Coating process for manufacture or reprocessing of sputter targets and x-ray anodes
RU2434073C9 (ru) 2005-05-05 2012-12-27 Х.К. Штарк Гмбх Способ покрытия поверхности субстрата и продукт с нанесенным покрытием
US20070044873A1 (en) 2005-08-31 2007-03-01 H. C. Starck Inc. Fine grain niobium sheet via ingot metallurgy
AT506547B1 (de) * 2006-03-07 2013-02-15 Cabot Corp Verfahren zur erzeugung verformter metallgegenstände
JP4974362B2 (ja) 2006-04-13 2012-07-11 株式会社アルバック Ｔａスパッタリングターゲットおよびその製造方法
US20080078268A1 (en) * 2006-10-03 2008-04-03 H.C. Starck Inc. Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof
US7776166B2 (en) * 2006-12-05 2010-08-17 Praxair Technology, Inc. Texture and grain size controlled hollow cathode magnetron targets and method of manufacture
US20080145688A1 (en) 2006-12-13 2008-06-19 H.C. Starck Inc. Method of joining tantalum clade steel structures
US8197894B2 (en) 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
KR101201577B1 (ko) * 2007-08-06 2012-11-14 에이치. 씨. 스타아크 아이앤씨 향상된 조직 균일성을 가진 내화 금속판
US8250895B2 (en) * 2007-08-06 2012-08-28 H.C. Starck Inc. Methods and apparatus for controlling texture of plates and sheets by tilt rolling
US8246903B2 (en) 2008-09-09 2012-08-21 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
US8043655B2 (en) * 2008-10-06 2011-10-25 H.C. Starck, Inc. Low-energy method of manufacturing bulk metallic structures with submicron grain sizes
CN101920436B (zh) * 2010-08-20 2011-10-26 宁夏东方钽业股份有限公司 溅射钽环件用钽条的制备工艺
CN102021523A (zh) * 2010-09-29 2011-04-20 吴江南玻华东工程玻璃有限公司 一种解决镀膜玻璃边缘效应的方法
WO2013049274A2 (en) 2011-09-29 2013-04-04 H.C. Starck, Inc. Large-area sputtering targets and methods of manufacturing large-area sputtering targets
CN102658346A (zh) * 2012-04-06 2012-09-12 宁夏东方钽业股份有限公司 一种大规格钽靶材的锻造方法
CN102699247B (zh) * 2012-05-18 2014-06-18 宁夏东方钽业股份有限公司 一种超导钽棒的锻造方法
CN103861982B (zh) * 2012-12-18 2016-06-15 宁夏东方钽业股份有限公司 一种铌旋转靶材铸锭的锻造方法
CN104419901B (zh) * 2013-08-27 2017-06-30 宁波江丰电子材料股份有限公司 一种钽靶材的制造方法
KR20160027122A (ko) * 2014-03-27 2016-03-09 제이엑스 킨조쿠 가부시키가이샤 탄탈 스퍼터링 타깃 및 그 제조 방법
US10023953B2 (en) 2014-04-11 2018-07-17 H.C. Starck Inc. High purity refractory metal powders and their use in sputtering targets which may have random texture
US10961613B2 (en) * 2014-12-22 2021-03-30 Agency For Defense Development Method for controlling microstructure and texture of tantalum
JP6293929B2 (ja) * 2015-05-22 2018-03-14 Ｊｘ金属株式会社 タンタルスパッタリングターゲット及びその製造方法
EP3260572A4 (en) 2015-05-22 2018-08-01 JX Nippon Mining & Metals Corporation Tantalum sputtering target, and production method therefor
WO2018179742A1 (ja) * 2017-03-30 2018-10-04 Ｊｘ金属株式会社 タンタルスパッタリングターゲット
US11062889B2 (en) 2017-06-26 2021-07-13 Tosoh Smd, Inc. Method of production of uniform metal plates and sputtering targets made thereby
US20190161850A1 (en) * 2017-11-30 2019-05-30 Tosoh Smd, Inc. Ultra-fine grain size tantalum sputtering targets with improved voltage performance and methods thereby
SG11202110358SA (en) * 2019-03-26 2021-10-28 Jx Nippon Mining & Metals Corp Niobium sputtering target
CN110983218B (zh) * 2019-12-25 2021-09-03 西部超导材料科技股份有限公司 一种组织均匀的小规格纯铌棒材的制备方法
CN112143990B (zh) * 2020-09-04 2022-01-07 中国航发北京航空材料研究院 一种钛合金β相大尺寸单晶的制备方法
CN116288091A (zh) * 2023-03-28 2023-06-23 南昌大学 一种低温制备超细晶粒钽片的退火工艺

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JP2603980B2 (ja) * 1988-01-13 1997-04-23 株式会社東芝 高断熱性鋳鉄
JP2796752B2 (ja) * 1990-04-27 1998-09-10 日本軽金属株式会社 耐食皮膜用Ａｌ―Ｎｉ―Ｓｉ合金製スパッタリングターゲット
JPH06264233A (ja) * 1993-03-12 1994-09-20 Nikko Kinzoku Kk Ｔｆｔ製造用スパッタリングタ−ゲット
JP2857015B2 (ja) * 1993-04-08 1999-02-10 株式会社ジャパンエナジー 高純度アルミニウムまたはその合金からなるスパッタリングターゲット
US5590389A (en) * 1994-12-23 1996-12-31 Johnson Matthey Electronics, Inc. Sputtering target with ultra-fine, oriented grains and method of making same
US5850755A (en) * 1995-02-08 1998-12-22 Segal; Vladimir M. Method and apparatus for intensive plastic deformation of flat billets
JPH10235670A (ja) * 1997-02-26 1998-09-08 Tosoh Corp ポリオレフィン樹脂連続気泡発泡体の製造方法
US6569270B2 (en) * 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
US6348139B1 (en) * 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles
US6348113B1 (en) * 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
US6464809B2 (en) * 1998-11-30 2002-10-15 Outokumpu Oyj Processes for producing articles with stress-free slit edges
JP3079378B1 (ja) * 1999-02-10 2000-08-21 東京タングステン株式会社 Ｍｏスパッターリングターゲット材及びその製造方法
JP2001020065A (ja) * 1999-07-07 2001-01-23 Hitachi Metals Ltd スパッタリング用ターゲット及びその製造方法ならびに高融点金属粉末材料
US6878250B1 (en) * 1999-12-16 2005-04-12 Honeywell International Inc. Sputtering targets formed from cast materials
US6331233B1 (en) * 2000-02-02 2001-12-18 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
CN1328409C (zh) * 2000-05-22 2007-07-25 卡伯特公司 铌溅射靶及其制造方法

Also Published As

Publication number Publication date
CA2438819A1 (en) 2002-09-12
JP2004526863A (ja) 2004-09-02
ATE339532T1 (de) 2006-10-15
CN1535322A (zh) 2004-10-06
JP4327460B2 (ja) 2009-09-09
WO2002070765A1 (en) 2002-09-12
CN1789476A (zh) 2006-06-21
KR20030090645A (ko) 2003-11-28
EP1366203A1 (en) 2003-12-03
DE60214683D1 (de) 2006-10-26
DE60214683T2 (de) 2007-09-13
NO20033547D0 (no) 2003-08-11
ZA200306399B (en) 2004-08-18
NO20033547L (no) 2003-09-26
HUP0303269A2 (hu) 2004-01-28
AU2002257005B2 (en) 2007-05-31
US20020112789A1 (en) 2002-08-22
HUP0303269A3 (en) 2004-05-28
CN1238547C (zh) 2006-01-25
IL157279A0 (en) 2004-02-19
MXPA03007490A (es) 2004-09-06
ES2272707T3 (es) 2007-05-01
CZ20032246A3 (cs) 2004-03-17
EP1366203A4 (en) 2004-07-28
BR0207384A (pt) 2004-02-10
PT1366203E (pt) 2006-12-29
EP1366203B1 (en) 2006-09-13
KR100966682B1 (ko) 2010-06-29
NZ527628A (en) 2004-07-30

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20100220