HK1052408B - 具有熔線的半導體器件及其製造方法 - Google Patents

具有熔線的半導體器件及其製造方法

Info

Publication number
HK1052408B
HK1052408B HK03104525.3A HK03104525A HK1052408B HK 1052408 B HK1052408 B HK 1052408B HK 03104525 A HK03104525 A HK 03104525A HK 1052408 B HK1052408 B HK 1052408B
Authority
HK
Hong Kong
Prior art keywords
fuse
semiconductor device
manufacture method
manufacture
semiconductor
Prior art date
Application number
HK03104525.3A
Other languages
English (en)
Other versions
HK1052408A1 (en
Inventor
神谷孝行
大村昌良
Original Assignee
雅馬哈株式會社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 雅馬哈株式會社 filed Critical 雅馬哈株式會社
Publication of HK1052408A1 publication Critical patent/HK1052408A1/xx
Publication of HK1052408B publication Critical patent/HK1052408B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Read Only Memory (AREA)
HK03104525.3A 2001-11-06 2003-06-24 具有熔線的半導體器件及其製造方法 HK1052408B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001340872 2001-11-06

Publications (2)

Publication Number Publication Date
HK1052408A1 HK1052408A1 (en) 2003-09-11
HK1052408B true HK1052408B (zh) 2007-06-08

Family

ID=19155012

Family Applications (1)

Application Number Title Priority Date Filing Date
HK03104525.3A HK1052408B (zh) 2001-11-06 2003-06-24 具有熔線的半導體器件及其製造方法

Country Status (6)

Country Link
US (3) US6804159B2 (zh)
EP (1) EP1309002B1 (zh)
KR (1) KR100539113B1 (zh)
CN (1) CN1305134C (zh)
HK (1) HK1052408B (zh)
TW (1) TWI235456B (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100718614B1 (ko) * 2003-10-24 2007-05-16 야마하 가부시키가이샤 용량 소자와 퓨즈 소자를 구비한 반도체 장치 및 그 제조방법
US7026692B1 (en) * 2003-11-12 2006-04-11 Xilinx, Inc. Low voltage non-volatile memory transistor
DE102004014925B4 (de) * 2004-03-26 2016-12-29 Infineon Technologies Ag Elektronische Schaltkreisanordnung
US7227239B2 (en) * 2004-09-23 2007-06-05 International Business Machines Corporation Resettable fuse device and method of fabricating the same
US7193292B2 (en) * 2004-12-02 2007-03-20 Taiwan Semiconductor Manufacturing Co., Ltd Fuse structure with charge protection circuit
US7442583B2 (en) * 2004-12-17 2008-10-28 International Business Machines Corporation Using electrically programmable fuses to hide architecture, prevent reverse engineering, and make a device inoperable
CN101425502B (zh) * 2005-03-30 2012-07-11 雅马哈株式会社 适合半导体器件的熔丝断开方法
US7242239B2 (en) * 2005-06-07 2007-07-10 International Business Machines Corporation Programming and determining state of electrical fuse using field effect transistor having multiple conduction states
JP2007004887A (ja) * 2005-06-23 2007-01-11 Toshiba Corp 半導体記憶装置
KR100790819B1 (ko) * 2006-07-20 2008-01-02 삼성전자주식회사 반도체 집적 회로 및 그의 제조 방법
JP2008042108A (ja) * 2006-08-10 2008-02-21 Hitachi Ltd 半導体装置
US8445362B2 (en) * 2006-10-11 2013-05-21 International Business Machines Corporation Apparatus and method for programming an electronically programmable semiconductor fuse
KR100824879B1 (ko) * 2006-12-28 2008-04-23 동부일렉트로닉스 주식회사 퓨즈를 가지는 반도체 소자
US7888771B1 (en) 2007-05-02 2011-02-15 Xilinx, Inc. E-fuse with scalable filament link
JP2009177044A (ja) * 2008-01-28 2009-08-06 Panasonic Corp 電気ヒューズ回路
US7724600B1 (en) 2008-03-05 2010-05-25 Xilinx, Inc. Electronic fuse programming current generator with on-chip reference
US7834659B1 (en) 2008-03-05 2010-11-16 Xilinx, Inc. Multi-step programming of E fuse cells
US7710813B1 (en) 2008-03-05 2010-05-04 Xilinx, Inc. Electronic fuse array
US7923811B1 (en) 2008-03-06 2011-04-12 Xilinx, Inc. Electronic fuse cell with enhanced thermal gradient
US8564023B2 (en) * 2008-03-06 2013-10-22 Xilinx, Inc. Integrated circuit with MOSFET fuse element
CN102270497A (zh) * 2010-06-02 2011-12-07 王彬 以影子非挥发存储器配置冗余存储的存储器
DE102011010567A1 (de) * 2011-02-07 2012-08-09 Magna Electronics Europe Gmbh & Co.Kg Bürstenloser Gleichstrommotor
US20120286390A1 (en) * 2011-05-11 2012-11-15 Kuei-Sheng Wu Electrical fuse structure and method for fabricating the same
US8759178B2 (en) 2011-11-09 2014-06-24 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US10438836B2 (en) 2011-11-09 2019-10-08 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing a semiconductor device
CN103178824A (zh) * 2013-03-18 2013-06-26 西安华芯半导体有限公司 一种能够实现部分模块电源关断的集成电路及关断方法
CN110830022B (zh) * 2018-08-10 2023-08-25 圣邦微电子（北京）股份有限公司 修调电路和芯片
CN113096717B (zh) * 2020-01-08 2024-02-27 中芯国际集成电路制造(上海)有限公司 一种熔丝存储单元、存储阵列以及存储阵列的工作方法
CN117519396B (zh) * 2023-12-27 2024-03-22 中国科学院合肥物质科学研究院 一种负载自适应的高效率脉冲恒流源及控制方法

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Publication number Priority date Publication date Assignee Title
US4441167A (en) * 1981-12-03 1984-04-03 Raytheon Company Reprogrammable read only memory
JPS63299139A (ja) * 1987-05-28 1988-12-06 Nec Corp ヒュ−ズ溶断方法
JPH0793030B2 (ja) 1990-04-06 1995-10-09 株式会社東芝 半導体メモリ装置
US5696659A (en) * 1993-02-10 1997-12-09 Maruo; Masaya Overcurrent protective circuit and semiconductor device
KR0122103B1 (ko) * 1994-05-07 1997-11-26 김광호 반도체 메모리 장치의 퓨즈 소자
KR0145888B1 (ko) * 1995-04-13 1998-11-02 김광호 반도체 메모리장치의 동작 모드 전환회로
KR0157345B1 (ko) * 1995-06-30 1998-12-01 김광호 반도체 메모리 소자의 전기 휴즈셀
JP3176324B2 (ja) * 1997-07-29 2001-06-18 日本電気アイシーマイコンシステム株式会社 半導体集積回路
JP2002134620A (ja) * 2000-10-27 2002-05-10 Mitsubishi Electric Corp 半導体装置

Also Published As

Publication number Publication date
EP1309002A3 (en) 2006-05-10
US20030122200A1 (en) 2003-07-03
CN1419289A (zh) 2003-05-21
US20050029621A1 (en) 2005-02-10
HK1052408A1 (en) 2003-09-11
TWI235456B (en) 2005-07-01
US20050099860A1 (en) 2005-05-12
US6804159B2 (en) 2004-10-12
EP1309002B1 (en) 2012-01-11
EP1309002A2 (en) 2003-05-07
KR100539113B1 (ko) 2005-12-26
TW200301956A (en) 2003-07-16
KR20030038457A (ko) 2003-05-16
CN1305134C (zh) 2007-03-14
US7248529B2 (en) 2007-07-24
US7180810B2 (en) 2007-02-20

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20111106