HK1033344A1 - Method of manufacturing plated substrate, magnetron sputtering source, plating chamber and plating apparatus - Google Patents

Method of manufacturing plated substrate, magnetron sputtering source, plating chamber and plating apparatus

Info

Publication number
HK1033344A1
HK1033344A1 HK01103956A HK01103956A HK1033344A1 HK 1033344 A1 HK1033344 A1 HK 1033344A1 HK 01103956 A HK01103956 A HK 01103956A HK 01103956 A HK01103956 A HK 01103956A HK 1033344 A1 HK1033344 A1 HK 1033344A1
Authority
HK
Hong Kong
Prior art keywords
plating
magnetron sputtering
sputtering source
plated substrate
manufacturing plated
Prior art date
Application number
HK01103956A
Other languages
English (en)
Inventor
Walter Haag
Pius Grunenfelder
Urs Schwendener
Markus Schlegel
Siegfried Krassnitzer
Original Assignee
Unaxis Trading Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unaxis Trading Ag filed Critical Unaxis Trading Ag
Publication of HK1033344A1 publication Critical patent/HK1033344A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3325—Problems associated with coating large area

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Plasma Technology (AREA)
HK01103956A 1997-12-17 2001-06-08 Method of manufacturing plated substrate, magnetron sputtering source, plating chamber and plating apparatus HK1033344A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH289797 1997-12-17
PCT/CH1998/000537 WO1999031290A1 (de) 1997-12-17 1998-12-15 Magnetronsputterquelle

Publications (1)

Publication Number Publication Date
HK1033344A1 true HK1033344A1 (en) 2001-08-24

Family

ID=4244074

Family Applications (1)

Application Number Title Priority Date Filing Date
HK01103956A HK1033344A1 (en) 1997-12-17 2001-06-08 Method of manufacturing plated substrate, magnetron sputtering source, plating chamber and plating apparatus

Country Status (9)

Country Link
US (3) US6093293A (ko)
EP (2) EP1042526A1 (ko)
JP (2) JP3794919B2 (ko)
KR (3) KR100487059B1 (ko)
CN (3) CN1239737C (ko)
DE (1) DE19881914D2 (ko)
HK (1) HK1033344A1 (ko)
TW (1) TW420822B (ko)
WO (1) WO1999031290A1 (ko)

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Also Published As

Publication number Publication date
CN1776006A (zh) 2006-05-24
DE19881914D2 (de) 2001-01-04
EP2119810A3 (de) 2010-10-06
TW420822B (en) 2001-02-01
WO1999031290A1 (de) 1999-06-24
US20020036133A1 (en) 2002-03-28
KR100487059B1 (ko) 2005-05-03
JP2004091927A (ja) 2004-03-25
CN1282384A (zh) 2001-01-31
KR20090009987A (ko) 2009-01-23
JP3794919B2 (ja) 2006-07-12
KR100915497B1 (ko) 2009-09-04
KR20010024668A (ko) 2001-03-26
CN1896301A (zh) 2007-01-17
EP1042526A1 (de) 2000-10-11
CN1239737C (zh) 2006-02-01
KR20040053356A (ko) 2004-06-23
US6284106B1 (en) 2001-09-04
US6454920B1 (en) 2002-09-24
JP2002508447A (ja) 2002-03-19
KR100512523B1 (ko) 2005-09-05
CN100529168C (zh) 2009-08-19
EP2119810A2 (de) 2009-11-18
US6093293A (en) 2000-07-25

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PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20091215