WO2008123434A1 - 回転マグネットスパッタ装置 - Google Patents

回転マグネットスパッタ装置 Download PDF

Info

Publication number
WO2008123434A1
WO2008123434A1 PCT/JP2008/056139 JP2008056139W WO2008123434A1 WO 2008123434 A1 WO2008123434 A1 WO 2008123434A1 JP 2008056139 W JP2008056139 W JP 2008056139W WO 2008123434 A1 WO2008123434 A1 WO 2008123434A1
Authority
WO
WIPO (PCT)
Prior art keywords
target
magnetron sputtering
sputtering apparatus
consumption
rotating magnetron
Prior art date
Application number
PCT/JP2008/056139
Other languages
English (en)
French (fr)
Inventor
Tadahiro Ohmi
Tetsuya Goto
Takaaki Matsuoka
Original Assignee
National University Corporation Tohoku University
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National University Corporation Tohoku University, Tokyo Electron Limited filed Critical National University Corporation Tohoku University
Priority to CN2008800094162A priority Critical patent/CN101641458B/zh
Priority to KR1020127006088A priority patent/KR101231261B1/ko
Priority to US12/593,660 priority patent/US8496792B2/en
Priority to DE112008000765T priority patent/DE112008000765T5/de
Priority to KR1020097021033A priority patent/KR101166396B1/ko
Priority to JP2009509225A priority patent/JP5147083B2/ja
Publication of WO2008123434A1 publication Critical patent/WO2008123434A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion

Abstract

　回転マグネットスパッタ装置において、ターゲットの消耗によってターゲット表面が変化し、成膜レートが経時変化するのを少なくするために、ターゲットの消耗変位量を測定し、測定結果に応じて、回転磁石群とターゲット間の距離を調整し、均一な成膜レートを長時間に亘って実現する。ターゲットの消耗変位量を測定する手段としては、超音波センサーを用いても良いし、レーザ送受信装置を用いても良い。
PCT/JP2008/056139 2007-03-30 2008-03-28 回転マグネットスパッタ装置 WO2008123434A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CN2008800094162A CN101641458B (zh) 2007-03-30 2008-03-28 旋转磁铁溅射装置
KR1020127006088A KR101231261B1 (ko) 2007-03-30 2008-03-28 회전 마그넷 스퍼터 장치
US12/593,660 US8496792B2 (en) 2007-03-30 2008-03-28 Rotary magnet sputtering apparatus
DE112008000765T DE112008000765T5 (de) 2007-03-30 2008-03-28 Drehmagnet-Sputter-Vorrichtung
KR1020097021033A KR101166396B1 (ko) 2007-03-30 2008-03-28 회전 마그넷 스퍼터 장치
JP2009509225A JP5147083B2 (ja) 2007-03-30 2008-03-28 回転マグネットスパッタ装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007092058 2007-03-30
JP2007-092058 2007-03-30

Publications (1)

Publication Number Publication Date
WO2008123434A1 true WO2008123434A1 (ja) 2008-10-16

Family

ID=39830919

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/056139 WO2008123434A1 (ja) 2007-03-30 2008-03-28 回転マグネットスパッタ装置

Country Status (7)

Country Link
US (1) US8496792B2 (ja)
JP (1) JP5147083B2 (ja)
KR (2) KR101231261B1 (ja)
CN (1) CN101641458B (ja)
DE (1) DE112008000765T5 (ja)
TW (1) TWI391508B (ja)
WO (1) WO2008123434A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009054060A1 (de) * 2009-11-20 2011-05-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zum Beschichten eines Substrates
JP2016514207A (ja) * 2013-03-01 2016-05-19 スパッタリング・コンポーネンツ・インコーポレーテッド スパッタリング装置

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI410511B (zh) * 2007-03-16 2013-10-01 Univ Tohoku Nat Univ Corp 磁控管濺鍍裝置
JP5283084B2 (ja) * 2007-04-06 2013-09-04 国立大学法人東北大学 マグネトロンスパッタ装置
TWI391514B (zh) * 2009-07-16 2013-04-01 Univ Nat Sun Yat Sen 磁控濺鍍機
JP5319021B2 (ja) * 2010-12-06 2013-10-16 シャープ株式会社 薄膜形成装置及び薄膜形成方法
US9093251B2 (en) 2011-02-18 2015-07-28 Toyota Motor Europe Nv/Sa Sputtering magnetron assembly
KR101275672B1 (ko) * 2011-03-15 2013-06-17 (주)울텍 스퍼터링 마그네트론
JP5424518B1 (ja) * 2012-10-26 2014-02-26 国立大学法人東北大学 マグネトロンスパッタ装置およびマグネトロンスパッタ方法
US10804083B2 (en) * 2014-07-09 2020-10-13 Taiwan Semiconductor Manufacturing Co., Ltd. Cathode assembly, physical vapor deposition system, and method for physical vapor deposition
CN105951052B (zh) * 2016-06-29 2018-10-12 昆山国显光电有限公司 磁控溅射装置
FR3073279A1 (fr) * 2017-11-09 2019-05-10 Commissariat A L'energie Atomique Et Aux Energies Alternatives Systeme de mesure d'un diametre et/ou d'une epaisseur d'une cible disposee dans une chambre de depot d'un equipement de depot
KR102149680B1 (ko) * 2018-08-03 2020-08-31 주식회사 테토스 기판 측면부 증착 장치
BE1026859B1 (nl) * 2018-10-22 2020-07-14 Soleras Advanced Coatings Bv Magnetron met geïntegreerd circuit voor het monitoren en controle
CN112553583B (zh) * 2019-09-25 2023-03-28 亚威科股份有限公司 溅射装置及溅射装置控制方法
CN112593193B (zh) * 2020-11-16 2022-12-09 中建材玻璃新材料研究院集团有限公司 一种真空磁控溅射镀膜设备及其镀膜方法

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JPS63307270A (ja) * 1987-06-08 1988-12-14 Matsushita Electric Ind Co Ltd スパッタリング装置
JPH1026698A (ja) * 1996-07-12 1998-01-27 Nikon Corp 真空薄膜形成装置及び反射鏡の製造方法
JP2001032067A (ja) * 1999-07-22 2001-02-06 Sanyo Shinku Kogyo Kk 成膜用磁石とそれを用いた成膜方法及びその装置
WO2007043476A1 (ja) * 2005-10-07 2007-04-19 Tohoku University マグネトロンスパッタ装置

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US4194962A (en) * 1978-12-20 1980-03-25 Advanced Coating Technology, Inc. Cathode for sputtering
DE3521053A1 (de) * 1985-06-12 1986-12-18 Leybold-Heraeus GmbH, 5000 Köln Vorrichtung zum aufbringen duenner schichten auf ein substrat
JPS63290270A (ja) * 1987-05-20 1988-11-28 Toshiba Corp スパッタリング装置におけるタ−ゲットの厚さ測定方法
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WO2004097401A1 (en) * 2003-04-24 2004-11-11 Tosoh Smd, Inc. Systems and methods for non-contact measuring sputtering target thickness ultrasoniics
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Publication number Priority date Publication date Assignee Title
JPS63307270A (ja) * 1987-06-08 1988-12-14 Matsushita Electric Ind Co Ltd スパッタリング装置
JPH1026698A (ja) * 1996-07-12 1998-01-27 Nikon Corp 真空薄膜形成装置及び反射鏡の製造方法
JP2001032067A (ja) * 1999-07-22 2001-02-06 Sanyo Shinku Kogyo Kk 成膜用磁石とそれを用いた成膜方法及びその装置
WO2007043476A1 (ja) * 2005-10-07 2007-04-19 Tohoku University マグネトロンスパッタ装置

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ITAGAKI K., HARI Y., HAYAKAWA K.: "Ogata Kiban'yo Spatter Sochi ni Okeru Multi Magnet Cathode (MMC) no Tokucho", CANON ANELVA TECHNICAL REPORTS, vol. 12, May 2006 (2006-05-01), pages 29 - 32 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009054060A1 (de) * 2009-11-20 2011-05-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zum Beschichten eines Substrates
DE102009054060B4 (de) * 2009-11-20 2014-10-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zum Beschichten eines Substrates
JP2016514207A (ja) * 2013-03-01 2016-05-19 スパッタリング・コンポーネンツ・インコーポレーテッド スパッタリング装置

Also Published As

Publication number Publication date
TW200916596A (en) 2009-04-16
DE112008000765T5 (de) 2010-04-29
KR101231261B1 (ko) 2013-02-07
US20100126852A1 (en) 2010-05-27
US8496792B2 (en) 2013-07-30
JPWO2008123434A1 (ja) 2010-07-15
CN101641458B (zh) 2013-07-24
KR20120034824A (ko) 2012-04-12
JP5147083B2 (ja) 2013-02-20
KR20090122376A (ko) 2009-11-27
KR101166396B1 (ko) 2012-07-23
TWI391508B (zh) 2013-04-01
CN101641458A (zh) 2010-02-03

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