HK1030485A1 - Apparatus and method for performing a defect leakage screen test for memory devices. - Google Patents

Apparatus and method for performing a defect leakage screen test for memory devices.

Info

Publication number
HK1030485A1
HK1030485A1 HK01101440A HK01101440A HK1030485A1 HK 1030485 A1 HK1030485 A1 HK 1030485A1 HK 01101440 A HK01101440 A HK 01101440A HK 01101440 A HK01101440 A HK 01101440A HK 1030485 A1 HK1030485 A1 HK 1030485A1
Authority
HK
Hong Kong
Prior art keywords
memory devices
screen test
defect leakage
leakage screen
defect
Prior art date
Application number
HK01101440A
Other languages
English (en)
Inventor
Russell J Houghton
Alan D Norris
Michael P Clinton
Joseph T Schnell
Klaus G Enk
Original Assignee
Ibm
Infineon Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm, Infineon Technologies Corp filed Critical Ibm
Publication of HK1030485A1 publication Critical patent/HK1030485A1/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/025—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in signal lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5004—Voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5006—Current
HK01101440A 1999-04-20 2001-02-28 Apparatus and method for performing a defect leakage screen test for memory devices. HK1030485A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/294,866 US6330697B1 (en) 1999-04-20 1999-04-20 Apparatus and method for performing a defect leakage screen test for memory devices

Publications (1)

Publication Number Publication Date
HK1030485A1 true HK1030485A1 (en) 2001-05-04

Family

ID=23135284

Family Applications (1)

Application Number Title Priority Date Filing Date
HK01101440A HK1030485A1 (en) 1999-04-20 2001-02-28 Apparatus and method for performing a defect leakage screen test for memory devices.

Country Status (6)

Country Link
US (1) US6330697B1 (zh)
JP (1) JP3540711B2 (zh)
KR (1) KR100687991B1 (zh)
CN (1) CN1173392C (zh)
HK (1) HK1030485A1 (zh)
TW (1) TW472266B (zh)

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KR100395771B1 (ko) * 2001-06-16 2003-08-21 삼성전자주식회사 불휘발성 반도체 메모리 장치 및 그것의 프로그램 방법
DE60320314T2 (de) * 2003-02-20 2009-06-25 International Business Machines Corp. Testverfahren für integrierte schaltungen mit verwendung modifikation von well-spannungen
DE102004039831B4 (de) * 2003-08-25 2016-05-12 Infineon Technologies Ag Multi-Chip-Package
US7003432B2 (en) * 2003-12-30 2006-02-21 Infineon Technologies Richmond Lp Method of and system for analyzing cells of a memory device
US7222274B2 (en) * 2004-02-25 2007-05-22 International Business Machines Corporation Testing and repair methodology for memories having redundancy
KR100761358B1 (ko) * 2004-06-03 2007-09-27 주식회사 하이닉스반도체 반도체 기억 소자 및 그의 내부 전압 조절 방법
DE102004047813A1 (de) * 2004-09-29 2006-03-30 Infineon Technologies Ag Halbleiterbaustein mit einer Umlenkschaltung
US7295471B2 (en) * 2004-11-12 2007-11-13 Macronix International Co., Ltd. Memory device having a virtual ground array and methods using program algorithm to improve read margin loss
US7501651B2 (en) * 2004-11-30 2009-03-10 Samsung Electronics Co., Ltd. Test structure of semiconductor device
US7447964B2 (en) * 2005-01-03 2008-11-04 International Business Machines Corporation Difference signal path test and characterization circuit
JP4824936B2 (ja) * 2005-03-10 2011-11-30 株式会社日立製作所 ダイナミック・ランダム・アクセス・メモリ装置の検査方法
US7486098B2 (en) * 2005-06-16 2009-02-03 International Business Machines Corporation Integrated circuit testing method using well bias modification
DE102005040882B4 (de) * 2005-08-29 2007-04-26 Infineon Technologies Ag Verfahren zum Erfassen eines Leckstroms in einer Bitleitung eines Halbleiterspeichers
JP4996215B2 (ja) * 2006-11-28 2012-08-08 ルネサスエレクトロニクス株式会社 半導体装置のテスト方法
US8169844B2 (en) * 2009-06-30 2012-05-01 Agere Systems Inc. Memory built-in self-characterization
US8612812B2 (en) * 2010-12-30 2013-12-17 Hynix Semiconductor Inc. Semiconductor memory device, test circuit, and test operation method thereof
TWI469286B (zh) 2012-11-28 2015-01-11 Ind Tech Res Inst 半導體裝置之矽穿孔修補電路
CN105390497B (zh) * 2015-11-05 2019-01-18 中国科学院微电子研究所 包括带电荷体侧墙的cmos器件及其制造方法
CN107831391B (zh) * 2017-11-28 2019-06-07 英特尔产品（成都）有限公司 一种用于老化测试的方法、装置和设备
KR102533377B1 (ko) 2018-04-13 2023-05-18 삼성전자주식회사 로드 생성기를 포함하는 메모리 장치 및 그것을 동작시키는 방법
KR20220085881A (ko) 2020-12-15 2022-06-23 삼성전자주식회사 메모리 장치
US11774517B2 (en) * 2021-11-03 2023-10-03 Nxp B. V. Leakage and loading detector circuit
CN114187955B (zh) * 2022-01-10 2023-09-05 长鑫存储技术有限公司 存储器阵列的测试方法、装置、设备及存储介质

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Also Published As

Publication number Publication date
CN1280386A (zh) 2001-01-17
JP3540711B2 (ja) 2004-07-07
TW472266B (en) 2002-01-11
JP2000353397A (ja) 2000-12-19
KR100687991B1 (ko) 2007-02-27
CN1173392C (zh) 2004-10-27
KR20000077043A (ko) 2000-12-26
US6330697B1 (en) 2001-12-11

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20090419