HK1017577A1 - Memory device - Google Patents

Memory device

Info

Publication number
HK1017577A1
HK1017577A1 HK98115804A HK98115804A HK1017577A1 HK 1017577 A1 HK1017577 A1 HK 1017577A1 HK 98115804 A HK98115804 A HK 98115804A HK 98115804 A HK98115804 A HK 98115804A HK 1017577 A1 HK1017577 A1 HK 1017577A1
Authority
HK
Hong Kong
Prior art keywords
memory device
memory
Prior art date
Application number
HK98115804A
Other languages
English (en)
Inventor
David V Kersh Iii
Jimmie Don Childers
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23005929&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=HK1017577(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of HK1017577A1 publication Critical patent/HK1017577A1/xx

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
HK98115804A 1988-10-28 1998-12-28 Memory device HK1017577A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26440488A 1988-10-28 1988-10-28

Publications (1)

Publication Number Publication Date
HK1017577A1 true HK1017577A1 (en) 1999-11-19

Family

ID=23005929

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98115804A HK1017577A1 (en) 1988-10-28 1998-12-28 Memory device

Country Status (5)

Country Link
EP (2) EP0632461B1 (de)
JP (2) JP3020966B2 (de)
KR (1) KR0143237B1 (de)
DE (2) DE68928589T2 (de)
HK (1) HK1017577A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4103309A1 (de) * 1991-02-04 1992-08-06 Mikroelektronik Und Technologi Schaltungsanordnung zur ansteuerung von wortleitungen in halbleiterspeichern
KR100967106B1 (ko) * 2008-09-19 2010-07-05 주식회사 하이닉스반도체 반도체 메모리장치의 어드레스 디코딩 장치

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6059588A (ja) * 1983-09-12 1985-04-05 Hitachi Ltd 半導体記憶装置
US4660178A (en) * 1983-09-21 1987-04-21 Inmos Corporation Multistage decoding
JPH0682801B2 (ja) * 1983-12-23 1994-10-19 株式会社日立製作所 半導体記憶装置とそのレイアウト方法
JPS6180592A (ja) * 1984-09-26 1986-04-24 Hitachi Ltd 半導体記憶装置
JPS62150588A (ja) * 1985-12-25 1987-07-04 Hitachi Ltd 半導体記憶装置
JPS62192086A (ja) * 1986-02-18 1987-08-22 Matsushita Electronics Corp 半導体記憶装置
JPS6366138A (ja) * 1987-03-18 1988-03-24 Takeda Chem Ind Ltd １０−メチル−９−ドデセン−１−オ−ル類及びその製造法

Also Published As

Publication number Publication date
KR0143237B1 (ko) 1998-08-17
JP2000100167A (ja) 2000-04-07
EP0365876A3 (de) 1991-10-02
DE68928589T2 (de) 1998-08-13
DE68927248D1 (de) 1996-10-31
EP0632461A3 (de) 1995-02-15
DE68928589D1 (de) 1998-04-02
JP3020966B2 (ja) 2000-03-15
JPH02177080A (ja) 1990-07-10
EP0632461A2 (de) 1995-01-04
EP0632461B1 (de) 1998-02-25
EP0365876B1 (de) 1996-09-25
KR900006859A (ko) 1990-05-09
EP0365876A2 (de) 1990-05-02
DE68927248T2 (de) 1997-02-06

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)