DE68927248D1 - Dekodierung von Steuer-/Initialisierungssignalen mit örtlichen Vordekodierern - Google Patents
Dekodierung von Steuer-/Initialisierungssignalen mit örtlichen VordekodierernInfo
- Publication number
- DE68927248D1 DE68927248D1 DE68927248T DE68927248T DE68927248D1 DE 68927248 D1 DE68927248 D1 DE 68927248D1 DE 68927248 T DE68927248 T DE 68927248T DE 68927248 T DE68927248 T DE 68927248T DE 68927248 D1 DE68927248 D1 DE 68927248D1
- Authority
- DE
- Germany
- Prior art keywords
- decoders
- decoding
- control
- local pre
- initialization signals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Theoretical Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26440488A | 1988-10-28 | 1988-10-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE68927248D1 true DE68927248D1 (de) | 1996-10-31 |
| DE68927248T2 DE68927248T2 (de) | 1997-02-06 |
Family
ID=23005929
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE68928589T Expired - Fee Related DE68928589T2 (de) | 1988-10-28 | 1989-10-03 | Speicheranordnung |
| DE68927248T Expired - Fee Related DE68927248T2 (de) | 1988-10-28 | 1989-10-03 | Dekodierung von Steuer-/Initialisierungssignalen mit örtlichen Vordekodierern |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE68928589T Expired - Fee Related DE68928589T2 (de) | 1988-10-28 | 1989-10-03 | Speicheranordnung |
Country Status (5)
| Country | Link |
|---|---|
| EP (2) | EP0632461B1 (de) |
| JP (2) | JP3020966B2 (de) |
| KR (1) | KR0143237B1 (de) |
| DE (2) | DE68928589T2 (de) |
| HK (1) | HK1017577A1 (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4103309A1 (de) * | 1991-02-04 | 1992-08-06 | Mikroelektronik Und Technologi | Schaltungsanordnung zur ansteuerung von wortleitungen in halbleiterspeichern |
| KR100967106B1 (ko) * | 2008-09-19 | 2010-07-05 | 주식회사 하이닉스반도체 | 반도체 메모리장치의 어드레스 디코딩 장치 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6059588A (ja) * | 1983-09-12 | 1985-04-05 | Hitachi Ltd | 半導体記憶装置 |
| US4660178A (en) * | 1983-09-21 | 1987-04-21 | Inmos Corporation | Multistage decoding |
| JPH0682801B2 (ja) * | 1983-12-23 | 1994-10-19 | 株式会社日立製作所 | 半導体記憶装置とそのレイアウト方法 |
| JPS6180592A (ja) * | 1984-09-26 | 1986-04-24 | Hitachi Ltd | 半導体記憶装置 |
| JPS62150588A (ja) * | 1985-12-25 | 1987-07-04 | Hitachi Ltd | 半導体記憶装置 |
| JPS62192086A (ja) * | 1986-02-18 | 1987-08-22 | Matsushita Electronics Corp | 半導体記憶装置 |
| JPS6366138A (ja) * | 1987-03-18 | 1988-03-24 | Takeda Chem Ind Ltd | １０−メチル−９−ドデセン−１−オ−ル類及びその製造法 |
-
1989
- 1989-10-03 EP EP94113312A patent/EP0632461B1/de not_active Expired - Lifetime
- 1989-10-03 EP EP89118312A patent/EP0365876B1/de not_active Expired - Lifetime
- 1989-10-03 DE DE68928589T patent/DE68928589T2/de not_active Expired - Fee Related
- 1989-10-03 DE DE68927248T patent/DE68927248T2/de not_active Expired - Fee Related
- 1989-10-27 KR KR1019890015607A patent/KR0143237B1/ko not_active IP Right Cessation
- 1989-10-27 JP JP1281613A patent/JP3020966B2/ja not_active Expired - Lifetime
-
1998
- 1998-12-28 HK HK98115804A patent/HK1017577A1/xx not_active IP Right Cessation
-
1999
- 1999-11-01 JP JP11310930A patent/JP2000100167A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0365876A3 (de) | 1991-10-02 |
| KR0143237B1 (ko) | 1998-08-17 |
| EP0632461B1 (de) | 1998-02-25 |
| KR900006859A (ko) | 1990-05-09 |
| HK1017577A1 (en) | 1999-11-19 |
| EP0632461A3 (de) | 1995-02-15 |
| EP0365876A2 (de) | 1990-05-02 |
| EP0365876B1 (de) | 1996-09-25 |
| DE68927248T2 (de) | 1997-02-06 |
| JPH02177080A (ja) | 1990-07-10 |
| DE68928589D1 (de) | 1998-04-02 |
| DE68928589T2 (de) | 1998-08-13 |
| EP0632461A2 (de) | 1995-01-04 |
| JP2000100167A (ja) | 2000-04-07 |
| JP3020966B2 (ja) | 2000-03-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8310 | Action for declaration of annulment | ||
| 8313 | Request for invalidation rejected/withdrawn | ||
| 8339 | Ceased/non-payment of the annual fee |