HK1012867A1 - Circuit-integrating light-receiving element - Google Patents
Circuit-integrating light-receiving elementInfo
- Publication number
- HK1012867A1 HK1012867A1 HK98114133A HK98114133A HK1012867A1 HK 1012867 A1 HK1012867 A1 HK 1012867A1 HK 98114133 A HK98114133 A HK 98114133A HK 98114133 A HK98114133 A HK 98114133A HK 1012867 A1 HK1012867 A1 HK 1012867A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- circuit
- receiving element
- integrating light
- integrating
- light
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02024—Position sensitive and lateral effect photodetectors; Quadrant photodiodes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26004396A JP3170463B2 (ja) | 1996-09-30 | 1996-09-30 | 回路内蔵受光素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1012867A1 true HK1012867A1 (en) | 1999-08-13 |
Family
ID=17342516
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK98114133A HK1012867A1 (en) | 1996-09-30 | 1998-12-21 | Circuit-integrating light-receiving element |
Country Status (7)
Country | Link |
---|---|
US (1) | US6114740A (xx) |
EP (1) | EP0834925A3 (xx) |
JP (1) | JP3170463B2 (xx) |
KR (1) | KR100288367B1 (xx) |
CN (1) | CN1109364C (xx) |
HK (1) | HK1012867A1 (xx) |
TW (1) | TW359039B (xx) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4131031B2 (ja) * | 1998-03-17 | 2008-08-13 | ソニー株式会社 | 受光素子を有する半導体装置、光学ピックアップ装置、および受光素子を有する半導体装置の製造方法 |
JP2000312021A (ja) * | 1999-04-26 | 2000-11-07 | Sony Corp | 半導体装置とその製造方法 |
DE19933162B4 (de) * | 1999-07-20 | 2004-11-11 | Institut für Mikroelektronik Stuttgart Stiftung des öffentlichen Rechts | Bildzelle, Bildsensor und Herstellungsverfahren hierfür |
JP3370298B2 (ja) | 1999-07-27 | 2003-01-27 | シャープ株式会社 | 回路内蔵受光素子 |
JP3317942B2 (ja) * | 1999-11-08 | 2002-08-26 | シャープ株式会社 | 半導体装置およびその製造方法 |
US6480042B2 (en) | 2000-07-04 | 2002-11-12 | Matsushita Electric Industrial Co., Ltd. | Current-to-voltage converting circuit, optical pickup head apparatus, and apparatus and method for recording/reproducing data |
JP3582715B2 (ja) | 2000-09-08 | 2004-10-27 | シャープ株式会社 | 回路内蔵受光素子の製造方法 |
US6559488B1 (en) * | 2000-10-02 | 2003-05-06 | Stmicroelectronics, Inc. | Integrated photodetector |
JP4208172B2 (ja) | 2000-10-31 | 2009-01-14 | シャープ株式会社 | フォトダイオードおよびそれを用いた回路内蔵受光素子 |
TW480642B (en) * | 2001-03-16 | 2002-03-21 | Amic Technology Taiwan Inc | Semiconductor wafer with sensors for detecting radiance on the semiconductor wafer |
US20030034540A1 (en) * | 2001-08-20 | 2003-02-20 | Em Microelectronic-Marin Sa | Photodetector, photodetecting device and method for controlling the sensitivity profile of a photodetector |
JP3976185B2 (ja) * | 2001-10-31 | 2007-09-12 | シャープ株式会社 | 受光素子、回路内蔵受光素子および光ピックアップ |
US6743652B2 (en) * | 2002-02-01 | 2004-06-01 | Stmicroelectronics, Inc. | Method for making an integrated circuit device including photodiodes |
JP3702854B2 (ja) | 2002-03-06 | 2005-10-05 | ソニー株式会社 | 固体撮像素子 |
US6566722B1 (en) * | 2002-06-26 | 2003-05-20 | United Microelectronics Corp. | Photo sensor in a photo diode on a semiconductor wafer |
JP4219755B2 (ja) * | 2003-07-16 | 2009-02-04 | ローム株式会社 | イメージセンサの製造方法およびイメージセンサ |
KR100634444B1 (ko) | 2004-12-20 | 2006-10-16 | 삼성전자주식회사 | 수광 소자 및 그 형성 방법 |
JP4919370B2 (ja) * | 2005-03-31 | 2012-04-18 | ルネサスエレクトロニクス株式会社 | 半導体受光装置及び半導体受光装置の製造方法 |
JP4086860B2 (ja) | 2005-05-23 | 2008-05-14 | 三洋電機株式会社 | 半導体装置 |
JP2006339533A (ja) | 2005-06-03 | 2006-12-14 | Sanyo Electric Co Ltd | 半導体装置 |
JP5272281B2 (ja) * | 2005-09-22 | 2013-08-28 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びにカメラ |
JP2007317767A (ja) * | 2006-05-24 | 2007-12-06 | Matsushita Electric Ind Co Ltd | 光半導体装置およびその製造方法 |
JP2007317768A (ja) | 2006-05-24 | 2007-12-06 | Matsushita Electric Ind Co Ltd | 光半導体装置およびその製造方法 |
JP2009064800A (ja) * | 2007-09-04 | 2009-03-26 | Nec Electronics Corp | 分割フォトダイオード |
TWI487089B (zh) * | 2013-02-08 | 2015-06-01 | Au Optronics Corp | 光源模組及電路板電路裝置 |
JP2019033195A (ja) * | 2017-08-09 | 2019-02-28 | キヤノン株式会社 | 撮像装置の製造方法 |
CN107946333A (zh) * | 2017-11-30 | 2018-04-20 | 德淮半导体有限公司 | 图像传感器及形成图像传感器的方法 |
US11502053B2 (en) | 2020-11-24 | 2022-11-15 | Micron Technology, Inc. | Bond pad connection layout |
CN112885858A (zh) * | 2021-03-31 | 2021-06-01 | 华虹半导体(无锡)有限公司 | Cmos图像传感器及其制造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2568074B2 (ja) * | 1986-11-11 | 1996-12-25 | パイオニア株式会社 | 光センサ集積回路 |
JP2717839B2 (ja) * | 1989-03-20 | 1998-02-25 | 松下電子工業株式会社 | 光半導体装置 |
JP3122118B2 (ja) * | 1990-07-25 | 2001-01-09 | ソニー株式会社 | 半導体装置 |
JP2678400B2 (ja) * | 1990-11-14 | 1997-11-17 | シャープ株式会社 | 回路内蔵受光素子 |
JP2793085B2 (ja) * | 1992-06-25 | 1998-09-03 | 三洋電機株式会社 | 光半導体装置とその製造方法 |
JP2799540B2 (ja) * | 1993-04-19 | 1998-09-17 | シャープ株式会社 | 受光素子 |
US5360987A (en) * | 1993-11-17 | 1994-11-01 | At&T Bell Laboratories | Semiconductor photodiode device with isolation region |
JPH0818093A (ja) * | 1994-06-30 | 1996-01-19 | Sony Corp | 半導体受光素子及び半導体装置並びにそれらの作製方法 |
JP2731115B2 (ja) * | 1994-07-14 | 1998-03-25 | シャープ株式会社 | 分割型受光素子 |
US5592124A (en) * | 1995-06-26 | 1997-01-07 | Burr-Brown Corporation | Integrated photodiode/transimpedance amplifier |
-
1996
- 1996-09-30 JP JP26004396A patent/JP3170463B2/ja not_active Expired - Lifetime
-
1997
- 1997-09-27 TW TW086114143A patent/TW359039B/zh active
- 1997-09-29 EP EP97116899A patent/EP0834925A3/en not_active Withdrawn
- 1997-09-29 KR KR1019970051118A patent/KR100288367B1/ko not_active IP Right Cessation
- 1997-09-30 CN CN97119246A patent/CN1109364C/zh not_active Expired - Fee Related
- 1997-09-30 US US08/944,101 patent/US6114740A/en not_active Expired - Lifetime
-
1998
- 1998-12-21 HK HK98114133A patent/HK1012867A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR19980025177A (ko) | 1998-07-06 |
EP0834925A3 (en) | 1999-04-28 |
US6114740A (en) | 2000-09-05 |
CN1185659A (zh) | 1998-06-24 |
KR100288367B1 (ko) | 2001-06-01 |
EP0834925A2 (en) | 1998-04-08 |
JPH10107243A (ja) | 1998-04-24 |
CN1109364C (zh) | 2003-05-21 |
JP3170463B2 (ja) | 2001-05-28 |
TW359039B (en) | 1999-05-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PF | Patent in force | ||
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20080930 |