HK1002037A1 - Self-aligned split gate eprom - Google Patents

Self-aligned split gate eprom

Info

Publication number
HK1002037A1
HK1002037A1 HK98101098A HK98101098A HK1002037A1 HK 1002037 A1 HK1002037 A1 HK 1002037A1 HK 98101098 A HK98101098 A HK 98101098A HK 98101098 A HK98101098 A HK 98101098A HK 1002037 A1 HK1002037 A1 HK 1002037A1
Authority
HK
Hong Kong
Prior art keywords
self
split gate
aligned split
gate eprom
eprom
Prior art date
Application number
HK98101098A
Other languages
English (en)
Inventor
Boaz Eitan
Original Assignee
Waferscale Integration Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25065483&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=HK1002037(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Waferscale Integration Inc filed Critical Waferscale Integration Inc
Publication of HK1002037A1 publication Critical patent/HK1002037A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
HK98101098A 1985-08-02 1998-02-12 Self-aligned split gate eprom HK1002037A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/762,582 US4868629A (en) 1984-05-15 1985-08-02 Self-aligned split gate EPROM

Publications (1)

Publication Number Publication Date
HK1002037A1 true HK1002037A1 (en) 1998-07-24

Family

ID=25065483

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98101098A HK1002037A1 (en) 1985-08-02 1998-02-12 Self-aligned split gate eprom

Country Status (5)

Country Link
US (1) US4868629A (fr)
EP (1) EP0211632B1 (fr)
JP (1) JP2554058B2 (fr)
DE (2) DE211632T1 (fr)
HK (1) HK1002037A1 (fr)

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US5087583A (en) * 1988-02-05 1992-02-11 Emanuel Hazani Process for EEPROM cell structure and architecture with shared programming and erase terminals
US5099297A (en) * 1988-02-05 1992-03-24 Emanuel Hazani EEPROM cell structure and architecture with programming and erase terminals shared between several cells
JPH0760866B2 (ja) * 1988-10-19 1995-06-28 株式会社東芝 不揮発性半導体記憶装置の製造方法
JP2580752B2 (ja) * 1988-12-27 1997-02-12 日本電気株式会社 不揮発性半導体記憶装置
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DE69432568T2 (de) * 1991-08-29 2004-02-26 Hyundai Electronics Industries Co., Ltd. Selbstjustierende flash-eeprom-zelle mit doppelbit-geteiltem gat
US5278439A (en) * 1991-08-29 1994-01-11 Ma Yueh Y Self-aligned dual-bit split gate (DSG) flash EEPROM cell
US5544103A (en) * 1992-03-03 1996-08-06 Xicor, Inc. Compact page-erasable eeprom non-volatile memory
US5625212A (en) * 1992-03-23 1997-04-29 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device and method of manufacturing the same
US5414287A (en) * 1994-04-25 1995-05-09 United Microelectronics Corporation Process for high density split-gate memory cell for flash or EPROM
US5541876A (en) * 1994-06-01 1996-07-30 United Microelectronics Corporation Memory cell fabricated by floating gate structure
US5627091A (en) * 1994-06-01 1997-05-06 United Microelectronics Corporation Mask ROM process for making a ROM with a trench shaped channel
US5457061A (en) * 1994-07-15 1995-10-10 United Microelectronics Corporation Method of making top floating-gate flash EEPROM structure
US5703387A (en) * 1994-09-30 1997-12-30 United Microelectronics Corp. Split gate memory cell with vertical floating gate
US5512503A (en) * 1994-11-23 1996-04-30 United Microelectronics Corporation Method of manufacture of a split gate flash EEPROM memory cell
US5482879A (en) * 1995-05-12 1996-01-09 United Microelectronics Corporation Process of fabricating split gate flash memory cell
JPH09237845A (ja) * 1996-02-28 1997-09-09 Ricoh Co Ltd 不揮発性半導体メモリ装置とその製造方法
US6130132A (en) * 1998-04-06 2000-10-10 Taiwan Semiconductor Manufacturing Company Clean process for manufacturing of split-gate flash memory device having floating gate electrode with sharp peak
US6177703B1 (en) 1999-05-28 2001-01-23 Vlsi Technology, Inc. Method and apparatus for producing a single polysilicon flash EEPROM having a select transistor and a floating gate transistor
US6272050B1 (en) 1999-05-28 2001-08-07 Vlsi Technology, Inc. Method and apparatus for providing an embedded flash-EEPROM technology
JP2003007723A (ja) * 2001-06-26 2003-01-10 Kitakyushu Foundation For The Advancement Of Industry Science & Technology 半導体素子及び半導体集積回路
US7092923B2 (en) * 2001-11-26 2006-08-15 Exploitation Of Next Generation Co. Ltd. Synapse element with learning function and semiconductor integrated circuit device including the synapse element
US6936883B2 (en) * 2003-04-07 2005-08-30 Silicon Storage Technology, Inc. Bi-directional read/program non-volatile floating gate memory cell and array thereof, and method of formation
US7190018B2 (en) * 2003-04-07 2007-03-13 Silicon Storage Technology, Inc. Bi-directional read/program non-volatile floating gate memory cell with independent controllable control gates, and array thereof, and method of formation
TW200601461A (en) * 2004-03-09 2006-01-01 Silicon Storage Tech Inc Buried bit line non-volatile floating gate memory cell with independent controllable control gate in a trench, and array thereof, and method of formation
CN101777519B (zh) * 2010-01-12 2013-09-25 上海宏力半导体制造有限公司 分栅型非易失性存储器及其制造方法
US9252149B2 (en) * 2012-04-30 2016-02-02 Hewlett-Packard Development Company, L.P. Device including active floating gate region area that is smaller than channel area
US10163494B1 (en) * 2017-05-31 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Memory device and fabrication method thereof

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DE2832388C2 (de) * 1978-07-24 1986-08-14 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von MNOS- und MOS-Transistoren in Silizium-Gate-Technologie auf einem Halbleitersubstrat
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US4561004A (en) * 1979-10-26 1985-12-24 Texas Instruments High density, electrically erasable, floating gate memory cell
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US4328565A (en) * 1980-04-07 1982-05-04 Eliyahou Harari Non-volatile eprom with increased efficiency
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JPS577162A (en) * 1980-06-17 1982-01-14 Toshiba Corp Nonvolatile semiconductor memory and manufacture therefor
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JPS5796572A (en) * 1980-12-08 1982-06-15 Toshiba Corp Semiconductor memory storage
DD158078A1 (de) * 1981-05-06 1982-12-22 Wilfried Krueger Verfahren zur herstellung einer halbleiteranordnung eines unsymmetrischen dmos-transistors
JPS58206165A (ja) * 1982-05-26 1983-12-01 Toshiba Corp 不揮発性半導体メモリ装置
JPS595660A (ja) * 1982-07-02 1984-01-12 Hitachi Ltd 半導体記憶装置
US4639893A (en) * 1984-05-15 1987-01-27 Wafer Scale Integration, Inc. Self-aligned split gate EPROM

Also Published As

Publication number Publication date
JPS62115777A (ja) 1987-05-27
EP0211632B1 (fr) 1997-05-21
EP0211632A3 (fr) 1988-09-14
DE3650624D1 (de) 1997-06-26
JP2554058B2 (ja) 1996-11-13
DE211632T1 (de) 1987-07-02
DE3650624T2 (de) 1997-09-11
US4868629A (en) 1989-09-19
EP0211632A2 (fr) 1987-02-25

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Legal Events

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PE Patent expired

Effective date: 20060731