FR2375692A1 - Memoire semi-conductrice a grilles flottantes, programmable electriquement - Google Patents

Memoire semi-conductrice a grilles flottantes, programmable electriquement

Info

Publication number
FR2375692A1
FR2375692A1 FR7739174A FR7739174A FR2375692A1 FR 2375692 A1 FR2375692 A1 FR 2375692A1 FR 7739174 A FR7739174 A FR 7739174A FR 7739174 A FR7739174 A FR 7739174A FR 2375692 A1 FR2375692 A1 FR 2375692A1
Authority
FR
France
Prior art keywords
matrix
column lines
semiconductor storage
selected row
electrically programmable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7739174A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/754,207 external-priority patent/US4122544A/en
Priority claimed from US05/754,144 external-priority patent/US4112509A/en
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of FR2375692A1 publication Critical patent/FR2375692A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

L'invention concerne une mémoire semi-conductrice rémanente à grilles flottantes, programmable électriquement. Elle comporte des transistors à grilles flottantes, les grilles flottantes étant intercalées entre une couche d'oxyde de grille et des grilles de commande formées par des lignes d'adresse de rangée. Les cellules peuvent être programmées et déprogrammées électriquement en appliquant des tensions déterminées à la source, au drain, à la grille de commande et au substrat; la grille flottante se charge ou se décharge à travers l'isolant qui la sépare de la grille de commande. Applications aux mémoires de calculateurs.
FR7739174A 1976-12-27 1977-12-26 Memoire semi-conductrice a grilles flottantes, programmable electriquement Withdrawn FR2375692A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US75414576A 1976-12-27 1976-12-27
US05/754,207 US4122544A (en) 1976-12-27 1976-12-27 Electrically alterable floating gate semiconductor memory device with series enhancement transistor
US05/754,144 US4112509A (en) 1976-12-27 1976-12-27 Electrically alterable floating gate semiconductor memory device

Publications (1)

Publication Number Publication Date
FR2375692A1 true FR2375692A1 (fr) 1978-07-21

Family

ID=27419460

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7739174A Withdrawn FR2375692A1 (fr) 1976-12-27 1977-12-26 Memoire semi-conductrice a grilles flottantes, programmable electriquement

Country Status (3)

Country Link
JP (1) JPS53108247A (fr)
DE (1) DE2758161A1 (fr)
FR (1) FR2375692A1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2462781A1 (fr) * 1979-07-27 1981-02-13 Thomson Csf Transistor a effet de champ a grille schottky autoalignee et son procede de fabrication
FR2464536A1 (fr) * 1979-09-04 1981-03-06 Texas Instruments Inc Memoire semi-conductrice a grille flottante, programmable electriquement, et son procede de fabrication
FR2468185A1 (fr) * 1980-10-17 1981-04-30 Intel Corp Procede de fabrication d'une matrice de memoire electriquement programmable a haute densite
FR2506494A1 (fr) * 1981-05-22 1982-11-26 Hitachi Ltd Memoire morte electriquement programmable
EP0416240A2 (fr) * 1989-07-21 1991-03-13 EUROSIL electronic GmbH Dispositif semi-conducteur comportant une zone d'isolation comportant de l'oxyde
EP0766316A1 (fr) * 1995-09-26 1997-04-02 Texas Instruments Incorporated Perfectionnements dans ou relatifs aux motrices de mémoire non volatile
WO2002045170A1 (fr) * 2000-11-28 2002-06-06 Infineon Technologies Ag Systeme de memoire eeprom flash et procede de production correspondant

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6025837B2 (ja) * 1978-09-14 1985-06-20 株式会社東芝 半導体記憶装置
SE7907193L (sv) * 1978-09-28 1980-03-29 Rca Corp Bestendigt minne
JPS5654693A (en) * 1979-10-05 1981-05-14 Hitachi Ltd Programable rom
JPS56156985A (en) * 1980-02-04 1981-12-03 Texas Instruments Inc Decoder
US4868629A (en) * 1984-05-15 1989-09-19 Waferscale Integration, Inc. Self-aligned split gate EPROM
US4698787A (en) * 1984-11-21 1987-10-06 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method
EP1240670A1 (fr) 1999-12-20 2002-09-18 Infineon Technologies AG Memoire non-ou a semiconducteurs non volatile et procede pour programmer cette derniere
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2462781A1 (fr) * 1979-07-27 1981-02-13 Thomson Csf Transistor a effet de champ a grille schottky autoalignee et son procede de fabrication
FR2464536A1 (fr) * 1979-09-04 1981-03-06 Texas Instruments Inc Memoire semi-conductrice a grille flottante, programmable electriquement, et son procede de fabrication
FR2468185A1 (fr) * 1980-10-17 1981-04-30 Intel Corp Procede de fabrication d'une matrice de memoire electriquement programmable a haute densite
FR2506494A1 (fr) * 1981-05-22 1982-11-26 Hitachi Ltd Memoire morte electriquement programmable
EP0416240A2 (fr) * 1989-07-21 1991-03-13 EUROSIL electronic GmbH Dispositif semi-conducteur comportant une zone d'isolation comportant de l'oxyde
EP0416240A3 (en) * 1989-07-21 1993-09-29 Eurosil Electronic Gmbh Semiconductor device using an oxide for the isolation region
EP0766316A1 (fr) * 1995-09-26 1997-04-02 Texas Instruments Incorporated Perfectionnements dans ou relatifs aux motrices de mémoire non volatile
WO2002045170A1 (fr) * 2000-11-28 2002-06-06 Infineon Technologies Ag Systeme de memoire eeprom flash et procede de production correspondant
US6800893B2 (en) 2000-11-28 2004-10-05 Infineon Technoloiges Ag Semiconductor circuit configuration and associated fabrication method

Also Published As

Publication number Publication date
DE2758161A1 (de) 1978-07-06
JPS53108247A (en) 1978-09-20

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Legal Events

Date Code Title Description
ST Notification of lapse