JPS53108247A - Electrically programmable floating gate semiconductor memory - Google Patents

Electrically programmable floating gate semiconductor memory

Info

Publication number
JPS53108247A
JPS53108247A JP15716977A JP15716977A JPS53108247A JP S53108247 A JPS53108247 A JP S53108247A JP 15716977 A JP15716977 A JP 15716977A JP 15716977 A JP15716977 A JP 15716977A JP S53108247 A JPS53108247 A JP S53108247A
Authority
JP
Japan
Prior art keywords
semiconductor memory
floating gate
electrically programmable
gate semiconductor
programmable floating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15716977A
Other languages
English (en)
Inventor
Esu Uooru Roorensu
Jiei Matsukueruroi Debitsudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/754,207 external-priority patent/US4122544A/en
Priority claimed from US05/754,144 external-priority patent/US4112509A/en
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPS53108247A publication Critical patent/JPS53108247A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
JP15716977A 1976-12-27 1977-12-26 Electrically programmable floating gate semiconductor memory Pending JPS53108247A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US75414576A 1976-12-27 1976-12-27
US05/754,207 US4122544A (en) 1976-12-27 1976-12-27 Electrically alterable floating gate semiconductor memory device with series enhancement transistor
US05/754,144 US4112509A (en) 1976-12-27 1976-12-27 Electrically alterable floating gate semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS53108247A true JPS53108247A (en) 1978-09-20

Family

ID=27419460

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15716977A Pending JPS53108247A (en) 1976-12-27 1977-12-26 Electrically programmable floating gate semiconductor memory

Country Status (3)

Country Link
JP (1) JPS53108247A (ja)
DE (1) DE2758161A1 (ja)
FR (1) FR2375692A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5546598A (en) * 1978-09-28 1980-04-01 Rca Corp Durable memory array
JPS61127179A (ja) * 1984-11-21 1986-06-14 ローム・コーポレーション 単一トランジスタの電気的プログラム式メモリ装置、その製造方法及び使用方法
JPS62115777A (ja) * 1985-08-02 1987-05-27 ウエハスケ−ル　インテグレ−シヨン，インコ−ポレイテツド Ｅｐｒｏｍアレイ
JPS63239689A (ja) * 1980-02-04 1988-10-05 テキサス　インスツルメンツ　インコ−ポレイテツド 記憶装置
US9030877B2 (en) 2007-08-30 2015-05-12 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6025837B2 (ja) * 1978-09-14 1985-06-20 株式会社東芝 半導体記憶装置
FR2462781A1 (fr) * 1979-07-27 1981-02-13 Thomson Csf Transistor a effet de champ a grille schottky autoalignee et son procede de fabrication
US4376947A (en) * 1979-09-04 1983-03-15 Texas Instruments Incorporated Electrically programmable floating gate semiconductor memory device
JPS5654693A (en) * 1979-10-05 1981-05-14 Hitachi Ltd Programable rom
FR2468185A1 (fr) * 1980-10-17 1981-04-30 Intel Corp Procede de fabrication d'une matrice de memoire electriquement programmable a haute densite
JPS57192067A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Erasable and programmable read only memory unit
DE3924062C2 (de) * 1989-07-21 1993-11-25 Eurosil Electronic Gmbh EEPROM-Halbleitereinrichtung mit Isolierzonen für Niedervolt-Logikelemente
US5659500A (en) * 1995-09-26 1997-08-19 Texas Instruments Incorporated Nonvolatile memory array with compatible vertical source lines
EP1240670A1 (de) 1999-12-20 2002-09-18 Infineon Technologies AG Nichtflüchtige nor-halbleiterspeichereinrichtung und verfahren zu deren programmierung
DE10058948A1 (de) 2000-11-28 2002-06-06 Infineon Technologies Ag Halbleiterschaltungsanordnung sowie dazugehöriges Herstellungsverfahren

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5546598A (en) * 1978-09-28 1980-04-01 Rca Corp Durable memory array
JPS5732514B2 (ja) * 1978-09-28 1982-07-12
JPS63239689A (ja) * 1980-02-04 1988-10-05 テキサス　インスツルメンツ　インコ−ポレイテツド 記憶装置
JPH0472320B2 (ja) * 1980-02-04 1992-11-17 Texas Instruments Inc
JPS61127179A (ja) * 1984-11-21 1986-06-14 ローム・コーポレーション 単一トランジスタの電気的プログラム式メモリ装置、その製造方法及び使用方法
JPH0629553A (ja) * 1984-11-21 1994-02-04 Rohm Corp メモリー装置
JPS62115777A (ja) * 1985-08-02 1987-05-27 ウエハスケ−ル　インテグレ−シヨン，インコ−ポレイテツド Ｅｐｒｏｍアレイ
US9030877B2 (en) 2007-08-30 2015-05-12 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device

Also Published As

Publication number Publication date
DE2758161A1 (de) 1978-07-06
FR2375692A1 (fr) 1978-07-21

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