GB520005A - Asymmetrical resistance - Google Patents
Asymmetrical resistanceInfo
- Publication number
- GB520005A GB520005A GB35164/38A GB3516438A GB520005A GB 520005 A GB520005 A GB 520005A GB 35164/38 A GB35164/38 A GB 35164/38A GB 3516438 A GB3516438 A GB 3516438A GB 520005 A GB520005 A GB 520005A
- Authority
- GB
- United Kingdom
- Prior art keywords
- dec
- instance
- minutes
- heating
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 239000010949 copper Substances 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 abstract 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 abstract 1
- 229940112669 cuprous oxide Drugs 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000010791 quenching Methods 0.000 abstract 1
- 230000000171 quenching effect Effects 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
- H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Conductive Materials (AREA)
- Chemical Treatment Of Metals (AREA)
Abstract
520,005. Alloys; coating metals. STANDARD TELEPHONES & CABLES, Ltd. Dec. 2, 1938, No. 35164. Convention date, Dec. 4, 1937. [Classes 82 (i) and 82 (ii)] [Also in Group XXXVI] A copper cuprous oxide rectifier is made from commercial copper of high purity to which has been added from 0À05 - 0À4 per cent. of lead. Such an alloy is formed into sheets, and blanks and washers punched therefrom and an oxide-coating is produced thereon, for instance by heating at 1000‹C. for 8 minutes in an oxidizing atmosphere, heating at 500‹C. for 5 minutes and quenching in cold water. The resulting oxide layer is heated to provide a low ohmic contact surface thereon, for instance by the process described in Specification 519,987.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US178052A US2143824A (en) | 1937-12-04 | 1937-12-04 | Asymmetrical conductor |
Publications (1)
Publication Number | Publication Date |
---|---|
GB520005A true GB520005A (en) | 1940-04-11 |
Family
ID=22650987
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB35164/38A Expired GB520005A (en) | 1937-12-04 | 1938-12-02 | Asymmetrical resistance |
Country Status (4)
Country | Link |
---|---|
US (1) | US2143824A (en) |
CH (1) | CH214269A (en) |
FR (1) | FR846918A (en) |
GB (1) | GB520005A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2484252A (en) * | 1944-11-07 | 1949-10-11 | Bell Telephone Labor Inc | Asymmetrical conductor |
GB1020914A (en) * | 1961-11-10 | 1966-02-23 | Gen Electric | Improvements in vacuum circuit interrupter |
-
1937
- 1937-12-04 US US178052A patent/US2143824A/en not_active Expired - Lifetime
-
1938
- 1938-11-23 CH CH214269D patent/CH214269A/en unknown
- 1938-12-01 FR FR846918D patent/FR846918A/en not_active Expired
- 1938-12-02 GB GB35164/38A patent/GB520005A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US2143824A (en) | 1939-01-10 |
CH214269A (en) | 1941-04-15 |
FR846918A (en) | 1939-09-28 |
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