GB531580A - Improved method of manufacturing an electrode system exhibiting unsymmetrical conductivity and comprising a selenium electrode - Google Patents
Improved method of manufacturing an electrode system exhibiting unsymmetrical conductivity and comprising a selenium electrodeInfo
- Publication number
- GB531580A GB531580A GB21775/39A GB2177539A GB531580A GB 531580 A GB531580 A GB 531580A GB 21775/39 A GB21775/39 A GB 21775/39A GB 2177539 A GB2177539 A GB 2177539A GB 531580 A GB531580 A GB 531580A
- Authority
- GB
- United Kingdom
- Prior art keywords
- selenium
- electrode
- manufacturing
- per cent
- improved method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title abstract 5
- 229910052711 selenium Inorganic materials 0.000 title abstract 5
- 239000011669 selenium Substances 0.000 title abstract 5
- 230000001747 exhibiting effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 abstract 2
- 230000000903 blocking effect Effects 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910000743 fusible alloy Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- YHBDIEWMOMLKOO-UHFFFAOYSA-I pentachloroniobium Chemical compound Cl[Nb](Cl)(Cl)(Cl)Cl YHBDIEWMOMLKOO-UHFFFAOYSA-I 0.000 abstract 1
- 238000005507 spraying Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photoreceptors In Electrophotography (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Electrodes For Compound Or Non-Metal Manufacture (AREA)
Abstract
531,580. Coating with selenium; alloys. PHILIPS LAMPS, Ltd. July 26, 1939, No. 21775. Convention date, July 29, 1938. Drawings to Specification. [Classes 82 (i) and 82 (ii)] [Also in Group XXXVI] A rectifier electrode is coated with selenium and at a temperature of about 200C. is subjected to pressure and is allowed to cool under pressure to about 150C. Niobium chloride may be mixed with the selenium and quinoline may be applied to the surface of the selenium before the heating operation prior to pressing. The conductive electrode is appled on to a blocking layer by spraying on to the blocking layer a low melting alloy such as one consisting of Sn 26 per cent. Bi 53 per cent. and Cd. 21 per cent. Specification 516,137 is referred to.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEP0002132 | 1938-07-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB531580A true GB531580A (en) | 1941-01-07 |
Family
ID=7357764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB21775/39A Expired GB531580A (en) | 1938-07-29 | 1939-07-26 | Improved method of manufacturing an electrode system exhibiting unsymmetrical conductivity and comprising a selenium electrode |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US2264464A (en) |
| CH (1) | CH214486A (en) |
| FR (1) | FR858320A (en) |
| GB (1) | GB531580A (en) |
| NL (2) | NL94534B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE446576A (en) * | 1941-07-24 | 1900-01-01 | ||
| US2446466A (en) * | 1944-11-11 | 1948-08-03 | Fansteel Metallurgical Corp | Blocking layer rectifier |
-
0
- NL NL54463D patent/NL54463C/xx active
- NL NL94534D patent/NL94534B/xx unknown
-
1939
- 1939-07-05 US US282956A patent/US2264464A/en not_active Expired - Lifetime
- 1939-07-26 GB GB21775/39A patent/GB531580A/en not_active Expired
- 1939-07-27 FR FR858320D patent/FR858320A/en not_active Expired
- 1939-07-27 CH CH214486D patent/CH214486A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL94534B (en) | 1900-01-01 |
| CH214486A (en) | 1941-04-30 |
| FR858320A (en) | 1940-11-22 |
| NL54463C (en) | 1900-01-01 |
| US2264464A (en) | 1941-12-02 |
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