US2143824A - Asymmetrical conductor - Google Patents

Asymmetrical conductor Download PDF

Info

Publication number
US2143824A
US2143824A US178052A US17805237A US2143824A US 2143824 A US2143824 A US 2143824A US 178052 A US178052 A US 178052A US 17805237 A US17805237 A US 17805237A US 2143824 A US2143824 A US 2143824A
Authority
US
United States
Prior art keywords
copper
per cent
lead
oxide
added
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US178052A
Inventor
George O Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Bell Telephone Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bell Telephone Laboratories Inc filed Critical Bell Telephone Laboratories Inc
Priority to US178052A priority Critical patent/US2143824A/en
Priority to CH214269D priority patent/CH214269A/en
Priority to FR846918D priority patent/FR846918A/en
Priority to GB35164/38A priority patent/GB520005A/en
Application granted granted Critical
Publication of US2143824A publication Critical patent/US2143824A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment

Definitions

  • This invention relates to electrical current conducting devices that offer a greater resistance to .fiow of current in one direction than in the opposite direction and more particularly to such devices of the copper-cuprous oxide type.
  • An object of this invention is to improve the current-voltage characteristics of copper-cuprous oxide rectifiers by increasing the resistance in both the high and low current directions, the increase in the high current direction being for voltages below 0.5 volt.
  • a feature of this invention comprises making copper-cuprous oxide type conduction devices from commercial copper having a high degree of purity to which has been added a small amount of another metal, more particularly lead.
  • Fig. l is a cross-sectional view of a coppercuprous oxide rectifier in accordance with this invention.
  • Fig. 2 is a top plan view of the device of Fig. 1.
  • the oxide layer 2 which has been formed on the blank is then suitably treated to provide a low ohmic electrical contact surface thereon.
  • An asymmetrical conducting device comprising a metallic body having an integral layer of an oxide of said body thereon, said body comprising copper to which has been added lead to the extent of slightly more than 0.1 per cent.
  • a conductive device comprising a body substantially of copper having a layer of oxide integral therewith, that comprises adding to molten copper a small amount, slightly over 0.1 per cent, of lead, forming a 30 body from the resulting melt and heat treating said body to form the oxide layer thereon.
  • a conductive device comprising a body substantially of copper having a layer of oxide integral therewith, that comprises adding to molten copper a. small amount, up to 0.4 per cent, of lead, forming a body from the resulting melt and heat treating said body to form the oxide layer thereon.
  • a conductive device comprising a body substantially of copper having a layer of oxide integral therewith, that comprises adding to molten copper from over 0.1 per cent to 0.4 per cent of lead, forming a body from the resulting melt and heat treating said body to form the oxide layer thereon.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Conductive Materials (AREA)
  • Chemical Treatment Of Metals (AREA)

Description

Jan. 10, 1939. O sMlTH 2,143,824
ASYMMETHICAL CONDUCTOR Filed Dec. 4, 1937 FIG.
COPPER WITH LEAD ADDED FIG. 2
INVENTOR a. 0.5m TH BY ATTORNEY Patented Jan. 10, 1939 ASYMIWIETRICAL CONDUCTOR George 0. Smith, Bloo Bell Telephone Labor infield, N. J., asslgnor to atories, Incorporated, New
York, N. Y., a corporation of New York Application December 4, 1937, Serial No. 178,052
6 Claims.
This invention relates to electrical current conducting devices that offer a greater resistance to .fiow of current in one direction than in the opposite direction and more particularly to such devices of the copper-cuprous oxide type. I
An object of this invention is to improve the current-voltage characteristics of copper-cuprous oxide rectifiers by increasing the resistance in both the high and low current directions, the increase in the high current direction being for voltages below 0.5 volt.
A feature of this invention comprises making copper-cuprous oxide type conduction devices from commercial copper having a high degree of purity to which has been added a small amount of another metal, more particularly lead.
Other and further objects and features will be apparent from the following detailed description taken in conjunction with the drawing in which:
Fig. l is a cross-sectional view of a coppercuprous oxide rectifier in accordance with this invention; and
Fig. 2 is a top plan view of the device of Fig. 1.
In the manufacture of copper-cuprous oxide rectifiers and the like it is considered good prac tice to employ commercial copper having a high degree of purity. Such copper may have traces of metallic impurities totalling about 0.04 per cent. In accordance with this invention there is added to such copper, when in the molten state, a small amount of lead. The resulting material is formed into sheets of suitable thickness and blanks or washers punched therefrom. The blanks may then be treated by various methods to produce metal-metal oxide rectifier .units. One such process comprises placing a blank I in a furnace having an oxidizing atmosphere at about 1000 centigrade for about eight minutes, then placing it in a second furnace maintained at about 500 centigrade for about five minutes and then quenching in cold water.
The oxide layer 2 which has been formed on the blank is then suitably treated to provide a low ohmic electrical contact surface thereon.
It has been roimd that the addition to copper of lead in an amount up to about 0.4 per cent by weight results in an asymmetrical conductor which has better characteristics than those made from commercial copper. The result of such ad dition is an increase in resistance in both the high and low current directions except at voltages of about ahalf-volt or more in the high current 5 direction. This result has been obtained in rectifiers made from copper melts to which about 0.05 per cent, 0.1 per cent, 0.2 per cent or 0.375 per cent of lead have been added.
It will be understood that this invention has been disclosed with reference to a particular, exemplary form thereof, andis to be considered as limited in scope by the appended claims only.
What is claimed is:
1. An asymmetrical conducting device comprising a metallic body having an integral layer of an oxide of said body thereon, said body comprising copper to which has been added lead to the extent of slightly more than 0.1 per cent.
2. A copper-cuprous oxide rectifier formed from 20 a copper body to which has been added from over 0.1 per cent to 0.4 per cent of lead.
3. A copper-cuprous oxide rectifier formed from a copper body to which has been added approximately 0.3 per cent of lead.
4. The method of making a conductive device comprising a body substantially of copper having a layer of oxide integral therewith, that comprises adding to molten copper a small amount, slightly over 0.1 per cent, of lead, forming a 30 body from the resulting melt and heat treating said body to form the oxide layer thereon.
5. The method of making a conductive device comprising a body substantially of copper having a layer of oxide integral therewith, that comprises adding to molten copper a. small amount, up to 0.4 per cent, of lead, forming a body from the resulting melt and heat treating said body to form the oxide layer thereon.
6. The method of making a conductive device comprising a body substantially of copper having a layer of oxide integral therewith, that comprises adding to molten copper from over 0.1 per cent to 0.4 per cent of lead, forming a body from the resulting melt and heat treating said body to form the oxide layer thereon.
GEORGE 0. SMITH.
US178052A 1937-12-04 1937-12-04 Asymmetrical conductor Expired - Lifetime US2143824A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US178052A US2143824A (en) 1937-12-04 1937-12-04 Asymmetrical conductor
CH214269D CH214269A (en) 1937-12-04 1938-11-23 Copper-copper oxide rectifier.
FR846918D FR846918A (en) 1937-12-04 1938-12-01 Devices with asymmetric conductivity
GB35164/38A GB520005A (en) 1937-12-04 1938-12-02 Asymmetrical resistance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US178052A US2143824A (en) 1937-12-04 1937-12-04 Asymmetrical conductor

Publications (1)

Publication Number Publication Date
US2143824A true US2143824A (en) 1939-01-10

Family

ID=22650987

Family Applications (1)

Application Number Title Priority Date Filing Date
US178052A Expired - Lifetime US2143824A (en) 1937-12-04 1937-12-04 Asymmetrical conductor

Country Status (4)

Country Link
US (1) US2143824A (en)
CH (1) CH214269A (en)
FR (1) FR846918A (en)
GB (1) GB520005A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2484252A (en) * 1944-11-07 1949-10-11 Bell Telephone Labor Inc Asymmetrical conductor
US3246979A (en) * 1961-11-10 1966-04-19 Gen Electric Vacuum circuit interrupter contacts

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2484252A (en) * 1944-11-07 1949-10-11 Bell Telephone Labor Inc Asymmetrical conductor
US3246979A (en) * 1961-11-10 1966-04-19 Gen Electric Vacuum circuit interrupter contacts

Also Published As

Publication number Publication date
CH214269A (en) 1941-04-15
FR846918A (en) 1939-09-28
GB520005A (en) 1940-04-11

Similar Documents

Publication Publication Date Title
US2174840A (en) Electrical condenser
US2447829A (en) Germanium-helium alloys and rectifiers made therefrom
US2246328A (en) Asymmetrical conductor and method of making the same
US2162362A (en) Asymmetrical conductor
US2143824A (en) Asymmetrical conductor
US2124306A (en) Electrical device
DE1032405B (en) Surface semiconductor with good heat dissipation
US2361157A (en) Alternating electric current rectifier of the selenium type
US2244771A (en) Composite conductor and contact between conductors
US2093661A (en) Asymmetrical conductor
US1936792A (en) Method of making copper oxide rectifiers for high voltage application
DE1002472B (en) Method for soldering electrodes to a semiconductor
US2484252A (en) Asymmetrical conductor
US3272625A (en) Beryllium-gold alloy and article made therefrom
US2496692A (en) Selenium rectifier
US2823148A (en) Method for removing portions of semiconductor device electrodes
US1980176A (en) Unidirectional current passing device
US1911023A (en) Method for preventing embrittlement of copper
US2186781A (en) Electrical rectifier
US1752239A (en) Protection of metals
US2158748A (en) Manufacture of electrical rectifiers
DE706980C (en) Process for the production of largely free metal contacts on electrical semiconductors
US1796372A (en) Asymmetric conductor of electricity
DE519162C (en) Electric valve with a fixed valve layer arranged between electrodes
US1901563A (en) Copper oxide rectifier