FR846918A - Devices with asymmetric conductivity - Google Patents

Devices with asymmetric conductivity

Info

Publication number
FR846918A
FR846918A FR846918DA FR846918A FR 846918 A FR846918 A FR 846918A FR 846918D A FR846918D A FR 846918DA FR 846918 A FR846918 A FR 846918A
Authority
FR
France
Prior art keywords
devices
asymmetric conductivity
asymmetric
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Le Materiel Telephonique Thomson CSF
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Le Materiel Telephonique Thomson CSF filed Critical Le Materiel Telephonique Thomson CSF
Application granted granted Critical
Publication of FR846918A publication Critical patent/FR846918A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
FR846918D 1937-12-04 1938-12-01 Devices with asymmetric conductivity Expired FR846918A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US178052A US2143824A (en) 1937-12-04 1937-12-04 Asymmetrical conductor

Publications (1)

Publication Number Publication Date
FR846918A true FR846918A (en) 1939-09-28

Family

ID=22650987

Family Applications (1)

Application Number Title Priority Date Filing Date
FR846918D Expired FR846918A (en) 1937-12-04 1938-12-01 Devices with asymmetric conductivity

Country Status (4)

Country Link
US (1) US2143824A (en)
CH (1) CH214269A (en)
FR (1) FR846918A (en)
GB (1) GB520005A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2484252A (en) * 1944-11-07 1949-10-11 Bell Telephone Labor Inc Asymmetrical conductor
GB1020914A (en) * 1961-11-10 1966-02-23 Gen Electric Improvements in vacuum circuit interrupter

Also Published As

Publication number Publication date
US2143824A (en) 1939-01-10
GB520005A (en) 1940-04-11
CH214269A (en) 1941-04-15

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