GB469610A - Improvements in or relating to dry electric rectifiers - Google Patents

Improvements in or relating to dry electric rectifiers

Info

Publication number
GB469610A
GB469610A GB2288/36A GB228836A GB469610A GB 469610 A GB469610 A GB 469610A GB 2288/36 A GB2288/36 A GB 2288/36A GB 228836 A GB228836 A GB 228836A GB 469610 A GB469610 A GB 469610A
Authority
GB
United Kingdom
Prior art keywords
selenium
layer
collodion
electrode
separately provided
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2288/36A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of GB469610A publication Critical patent/GB469610A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S425/00—Plastic article or earthenware shaping or treating: apparatus
    • Y10S425/812—Venting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biotechnology (AREA)
  • Thermistors And Varistors (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Train Traffic Observation, Control, And Security (AREA)
  • Laminated Bodies (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)
  • Coating By Spraying Or Casting (AREA)

Abstract

469,610. Wireless receiving-apparatus. NAAMLOOZE VENNOOTSCHAP PHILIPS' GLOEILAMPENFABRIEKEN. Jan. 24,1936, No. 2288. Convention date, March 11, 1935. Addition to 378,444, [Group XXXVI]. [Class 40 (v)] [Also in Group XXXVI] The dry surface rectifier described in the parent Specification wherein the electrodes are separated by a separately provided insulating layer has one of its electrodes comprised mainly of selenium to which is added one or more conductive substances in finely divided condition. The added substances may be sulphides of lead, antimony or copper, nitrides of zirconium and titanium, or oxides of cobalt and vanadium, the amount by weight of addition being 0À1 to 10 per cent of the weight of the selenium, and the grain size preferably ranging from 1 to 10Á. The separately provided insulating layer may be collodion, shellac, paper, an SiO2 film or water glass, or an artificial resin, the thickness of this layer being in general from 1 to 100Á. The selenium electrode 1 is supported on an iron plate 2 on which is located a layer 3 of collodion, gold varnish 4 forming the other electrode. Reference has been directed by the Comptroller to Specification 448,672.
GB2288/36A 1930-05-15 1936-01-24 Improvements in or relating to dry electric rectifiers Expired GB469610A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL378444X 1930-05-15
DEN37878A DE712674C (en) 1930-05-15 1935-03-11 Process for the production of electrode systems with asymmetrical conductivity

Publications (1)

Publication Number Publication Date
GB469610A true GB469610A (en) 1937-07-26

Family

ID=25989175

Family Applications (2)

Application Number Title Priority Date Filing Date
GB13452/31A Expired GB378444A (en) 1930-05-15 1931-05-06 Improvements in or relating to dry rectifiers
GB2288/36A Expired GB469610A (en) 1930-05-15 1936-01-24 Improvements in or relating to dry electric rectifiers

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB13452/31A Expired GB378444A (en) 1930-05-15 1931-05-06 Improvements in or relating to dry rectifiers

Country Status (6)

Country Link
US (3) US2002221A (en)
BE (2) BE379606A (en)
DE (2) DE681108C (en)
FR (2) FR716615A (en)
GB (2) GB378444A (en)
NL (1) NL32845C (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE976574C (en) * 1939-10-17 1963-11-21 Standard Elek K Lorenz Ag Process for the manufacture of dry rectifier plates
NL101869B (en) * 1941-06-26
BE478832A (en) * 1942-07-02 1900-01-01
DE970124C (en) * 1944-01-17 1958-09-04 Siemens Ag Process for the manufacture of selenium rectifiers
NL79203C (en) * 1944-03-04
US2452603A (en) * 1944-04-08 1948-11-02 Standard Telephones Cables Ltd Metal contact rectifier
US2473884A (en) * 1946-05-07 1949-06-21 Westinghouse Electric Corp Contact means
NL160163B (en) * 1950-03-31 Staley Mfg Co A E METHOD OF MANUFACTURE OF TABLETS.
US2622116A (en) * 1950-05-13 1952-12-16 Edward B Gregg Thermoelectric device
US2756165A (en) * 1950-09-15 1956-07-24 Dean A Lyon Electrically conducting films and process for forming the same
BE510386A (en) * 1951-04-05 1900-01-01
US2761095A (en) * 1952-12-08 1956-08-28 Fansteel Metallurgical Corp Selenium rectifier
DE974915C (en) * 1953-05-02 1961-05-31 Standard Elek K Lorenz Ag Process for the production of selenium rectifiers with a layer of varnish between selenium and cover electrode for use for control purposes
DE975284C (en) * 1954-02-19 1961-11-02 Licentia Gmbh Selenium rectifier with a ring-shaped insulating piece applied to the selenium layer or to the carrier electrode
NL221258A (en) * 1954-11-29
US2968014A (en) * 1959-04-01 1961-01-10 Kentucky Res Foundation Synthetic stibnite crystal and method for producing the same
DE1295700B (en) * 1964-03-25 1969-05-22 Licentia Gmbh Selenium rectifiers
DE3110153A1 (en) * 1980-03-28 1982-05-13 Berthold H. Dr. 5630 Remscheid Daimler Method and device for storing energy

Also Published As

Publication number Publication date
DE712674C (en) 1941-10-23
BE414231A (en)
GB378444A (en) 1932-08-08
DE681108C (en) 1939-09-14
FR716615A (en) 1931-12-24
FR47181E (en) 1937-02-06
NL32845C (en) 1934-06-15
US2002221A (en) 1935-05-21
US2137428A (en) 1938-11-22
USB469610I5 (en)
BE379606A (en) 1931-06-30

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