GB713403A - A dry-plate rectifier with an intermediate layer consisting of a chemical compound - Google Patents
A dry-plate rectifier with an intermediate layer consisting of a chemical compoundInfo
- Publication number
- GB713403A GB713403A GB25861/52A GB2586152A GB713403A GB 713403 A GB713403 A GB 713403A GB 25861/52 A GB25861/52 A GB 25861/52A GB 2586152 A GB2586152 A GB 2586152A GB 713403 A GB713403 A GB 713403A
- Authority
- GB
- United Kingdom
- Prior art keywords
- cadmium
- counter electrode
- intermediate layer
- selenium
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000001875 compounds Chemical class 0.000 title 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 3
- 229910052711 selenium Inorganic materials 0.000 abstract 3
- 239000011669 selenium Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 229910052793 cadmium Inorganic materials 0.000 abstract 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 2
- 229910001128 Sn alloy Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 abstract 1
- 229940065285 cadmium compound Drugs 0.000 abstract 1
- 150000001662 cadmium compounds Chemical class 0.000 abstract 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract 1
- WLZRMCYVCSSEQC-UHFFFAOYSA-N cadmium(2+) Chemical compound [Cd+2] WLZRMCYVCSSEQC-UHFFFAOYSA-N 0.000 abstract 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000007772 electrode material Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 239000007769 metal material Substances 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 150000003346 selenoethers Chemical class 0.000 abstract 1
- 238000005507 spraying Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
- H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biotechnology (AREA)
- Hybrid Cells (AREA)
Abstract
713,403. Semiconductor plate rectifiers. LICENTIA PATENT-VERWALTUNGS GES. Oct. 15, 1952, [Oct. 15, 1951.] No. 25861/52. Class 37. A dry plate rectifier has a semiconductive intermediate layer between the semiconductor material and the counter electrode, consisting of one or more cadmium compounds and the counter electrode material contains less than 1 per cent cadmium. The semiconductor may consist of selenium, the intermediate layer of cadmium selenide or cadmium sulphide, and the counter electrode of a low melting point metallic material such as bismuth or a bismuth-tin alloy. The layer may be produced thermically, cataphoretically, electrolytically, chemically or mechanically, or by applying its components to the selenium and then producing the layer by chemical reaction. The counter electrode may be applied by spraying in air. The arrangement avoids variation of characteristics during use, owing to the formation of a selenide due to say cadmium ions from a cadmium counter electrode penetrating the selenium.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE713403X | 1951-10-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB713403A true GB713403A (en) | 1954-08-11 |
Family
ID=6623707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB25861/52A Expired GB713403A (en) | 1951-10-15 | 1952-10-15 | A dry-plate rectifier with an intermediate layer consisting of a chemical compound |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR1064398A (en) |
| GB (1) | GB713403A (en) |
-
1952
- 1952-10-14 FR FR1064398D patent/FR1064398A/en not_active Expired
- 1952-10-15 GB GB25861/52A patent/GB713403A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1064398A (en) | 1954-05-13 |
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