DEP0052040DA - Method of manufacturing dry rectifiers - Google Patents
Method of manufacturing dry rectifiersInfo
- Publication number
- DEP0052040DA DEP0052040DA DEP0052040DA DE P0052040D A DEP0052040D A DE P0052040DA DE P0052040D A DEP0052040D A DE P0052040DA
- Authority
- DE
- Germany
- Prior art keywords
- excess
- rectifiers
- cadmium
- semiconducting
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 14
- 230000007547 defect Effects 0.000 claims description 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 229910052711 selenium Inorganic materials 0.000 claims description 5
- 239000011669 selenium Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 2
- 230000002950 deficient Effects 0.000 claims description 2
- YPMOSINXXHVZIL-UHFFFAOYSA-N sulfanylideneantimony Chemical compound [Sb]=S YPMOSINXXHVZIL-UHFFFAOYSA-N 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 6
- 239000002344 surface layer Substances 0.000 description 1
Description
Die Herstellung von Trockengleichrichtern mit einem Defekthalbleiter und angrenzender Überschußhalbleiterschicht bereitet besonders bei der Massenfertigung große Schwierigkeiten, wenn man gemäß dem zur Zeit üblichen Verfahren die überschußhalbleitende Schicht durch Umwandlung einer Oberflächenschicht des Defekthalbleiters herstellt.The production of dry rectifiers with a defect semiconductor and an adjacent excess semiconductor layer causes great difficulties, especially in mass production, if the excess semiconductor layer is produced by converting a surface layer of the defect semiconductor according to the currently usual process.
Bei dem erfindungsgemäßen Verfahren zum Herstellen solcher Gleichrichter wird die Überschußhalbleiterschicht durch Aufdampfen auf den Defekthalbleiter aufgebracht. Dabei bereitet es keine Schwierigkeiten, gleichzeitig mit der überschußhalbleitenden Substanz die die Störstellen bildenden Substanzen aufzudampfen.In the method according to the invention for producing such rectifiers, the excess semiconductor layer is applied to the defect semiconductor by vapor deposition. It is not difficult to vaporize the impurity-forming substances at the same time as the excess semiconducting substance.
Bei der Anwendung des erfindungsgemäßen Verfahrens zum Herstellen von Selentrockengleichrichtern wird auf defekthalbleitendes Selen überschußhalbleitendes Cadmiumselenid, Cadmiumsulfid, Cadmiumtellurid und/oder Antimonsulfid aufgedampft. Als Gegenelektrode eignet sich für solche Gleichrichter besonders eine cadmiumhaltige Legierung.When using the method according to the invention for the production of dry selenium rectifiers, excess semiconducting cadmium selenide, cadmium sulfide, cadmium telluride and / or antimony sulfide is evaporated onto defective semiconducting selenium. A cadmium-containing alloy is particularly suitable as a counter electrode for such rectifiers.
Es empfiehlt sich, die Substanzen für die Herstellung der überschußhalbleitenden Schicht so auszuwählen, daß diese Schicht eine geringere spezifische Leitfähigkeit besitzt als der Defekthalbleiter, damit die positive Raumladungsschicht im Überschußhalbleiter genügend dick wird und dadurch die elektrische Beanspruchung an der Grenze niedriger wird.It is advisable to select the substances for the production of the excess semiconductor layer in such a way that this layer has a lower specific conductivity than the defect semiconductor, so that the positive space charge layer in the excess semiconductor becomes sufficiently thick and thereby the electrical stress at the limit is lower.
Claims (5)
Family
ID=
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2950846A1 (en) | METHOD FOR PRODUCING AMORPHOUS SEMICONDUCTOR LAYERS | |
| DE1544190C3 (en) | Method for introducing imperfections in diamond | |
| DE3028018A1 (en) | METHOD FOR PRODUCING A SUN CELL | |
| DE884847C (en) | Dry contact rectifier or light-sensitive element | |
| DEP0052040DA (en) | Method of manufacturing dry rectifiers | |
| DE2063726B2 (en) | Method for manufacturing a semiconductor component | |
| DE881973C (en) | Process for the production of electrically asymmetrically conductive systems | |
| DE2239145C3 (en) | Process for the pretreatment of a semiconductor plate made of gallium arsenide | |
| DE2216032B2 (en) | Semiconductor device with a Schottky barrier layer and method for its manufacture | |
| DE875968C (en) | Electrically asymmetrical conductive system | |
| DE891300C (en) | Electrically asymmetrical conductive system | |
| DE706980C (en) | Process for the production of largely free metal contacts on electrical semiconductors | |
| DE971095C (en) | Process for the production of unipolar conductors with selenium or selenium compounds as semiconductors and particularly high voltage load capacity in the reverse direction | |
| DE887847C (en) | Method for improving the blocking resistance of selenium rectifiers | |
| DE829018C (en) | Process for tempering selenium layers for the production of dry rectifiers, barrier layer photocells | |
| DE736806C (en) | Process for the manufacture of copper oxide rectifiers | |
| DE821681C (en) | Cathode for dusting selenium barrier photocells | |
| DE2047998A1 (en) | Method for producing a planar arrangement | |
| DE898627C (en) | Method of reducing the aging of selenium rectifiers | |
| DE2061736A1 (en) | Process for the production of an aluminum metallization which is intermetallically passivated and device with an intermetallically passivated allumimum metallization | |
| DE1090326B (en) | Process for the production of a transistor with three zones from different semiconductor materials of alternating conductivity type | |
| DE727014C (en) | Process for the production of dry plate rectifiers with a light metal as the base electrode material | |
| DEP0013513DA (en) | Electrically asymmetrical conductive system, especially dry rectifier | |
| DE821093C (en) | Process for the production of selenium photo elements | |
| DE973098C (en) | Process for the production of high blocking crystal rectifiers based on the principle of multiple tip contact |